碳60·双二苯基膦乙烷合钯的合成和光电转化性能

在氮气氛中采用配体取代法合成了富勒烯双齿膦配合物C60Pd（Ph2PCH2CH2PPh2）,采用元素分析、红外光谱、紫外可见光谱、光电子能谱以及X射线粉末衍射等手段对产物进行表征,研究了产物的氧化还原性能及热稳定性能.在光电化学电池中测定了C60Pd（Ph2PCH2CH2PPh2）在GaAs电极上形成n＋n型异质结光伏效应,结果表明：产物具有优良的光电转化性能,尤其是在Fe（CN）63-/Fe（CN）64-介质电对中,光生电压最大达到367mV;当C60Pd（Ph2PCH2CH2PPh2）薄膜厚度为1μm时,光伏效应值最大.     

多孔硅-酶复合电极对葡萄糖溶液的电化学检测

多孔硅（PS）具有纳米级尺寸,高的表面积比和生物兼容性为固定生物分子提供了有利的条件。文章采用光电化学腐蚀的方法制备出多孔硅,并将3-氨基丙基三乙氧基硅烷（APTS）共价结合到多孔硅表面实现其生物功能化。通过戊二醛（Gluta）交联的方式将葡萄糖氧化酶（GOD）固定到生物功能化多孔硅上,形成GOD-Gluta-APTS-PS复合结构并用作电化学测量的工作电极。铂金和饱和甘汞电极分别作辅助电极和参比电极。通过测量还原电流对数与电极电势的关系以及计时电流曲线,对10×10^-6-55×10^-6mol dm^-3浓度范围的葡萄糖水溶液进行测量分析,发现还原电流与葡萄糖溶液在一定范围内有线性响应关系。制成的多孔硅酶复合电极间隔5天重复使用1次,20天内性能能保持基本不变。     

Pt／n—n＋-Si电极上化学沉积铁氰化镍薄膜及其应用

在表面外延生长9μm的n型层的磷重掺杂的硅基底n—n＋一Si）结构上沉积约40nm铂（Pt）,经氩气保护673K热处理30min作为半导体电极（Pt／n—n＋-Si）。将半导体电极和铁氰化钾、硫酸镍以及硝酸钠的溶液接触,沉积出稳定的铁氰化镍（NiHCF）薄膜。复合电极与Pt电极组成光电化学电池,在零偏电压条件下,通过测量该电池的光电流可检测过氧化氢。通过循环伏安和X-光电子能谱对NiHCF薄膜进行了分析与表征。     

多孔硅的高效可见光发射来自其表面

用扫描电镜继续对发光多孔硅的阴极射线发光进行了系统的研究,得到了其阴极荧光发射部位、强度分布显微照片,发现在样品的表面层脱落处（暴露着多孔层大量微孔）无阴极射线发光产生,只有表面层未脱落处才有阴极射线发光;对样品的截面实验研究同样清楚地表明多孔硅样品的阴极射线发光只来源于其表面层,多孔层、硅单晶衬底区域不发生阴极射线发光．实验还提供了阴极射线发光强度在截面上随深度变化情况显微照片．阴极射线发光光谱表明其光谱峰值位置在680nm处,相似于多孔硅的光致发光．实验结果再次表明多孔硅的可见光来源于其表面层中的荧光物质．     

淀粉-钛-硅复合物的制备表征和吸附性能

通过化学键合法制备了有机硅氧烷改性的淀粉-钛-硅复合物,并对淀粉、淀粉-钛复合物（ST）及淀粉-钛-硅复合物（STS）进行了红外光谱、扫描电镜、X射线衍射和差示扫描量热表征。表征结果说明钛氧化物及硅氧化物均参与反应,且较均匀地分散于淀粉表面,淀粉、ST和STS三者的热稳定性逐渐增加。研究了ST和STS对金属离子Hg2＋...     

表面金属化对多孔硅光特性的影响(英文)

在室温下使用过滤阴极真空电弧系统在多孔硅表面沉积大约10纳米左右厚度的铜、铝和钛薄膜,并且在真空下800度退火10分钟.多孔硅层是通过电化学腐蚀硅制得.X射线光电子谱、荧光谱,光吸收谱和X射线衍射谱的研究表明退火后,沉积铜和钛的样品出现明显的光吸收红移和硅2p电子能级移动.这是由于在多孔硅表面形成铜和钛的硅化物而引起的晶体场和电子传输变化所造成的.     

稀土钇掺杂多孔硅光致发光研究

采用电化学方法在多孔硅中掺杂了稀土钇(Y)元素.用荧光分光光度计分析了样品的光致发光特性.多孔硅样品在440nm波长激发下,光致发光谱上主发光峰位于620nm,认为其来源于Si-O复合物的发光中心;多孔硅样品在390nm波长激发下,光致发光谱上主发光峰分别位于527和576nm,并且用量子限制/发光中心模型加以解释.钇掺杂多孔硅样品的光致发光强度明显增强,并且在484nm附近出现新的发光峰.分析结果认为,这是由于钇的掺入,在多孔硅禁带中形成了新的表面能级,从而形成新的发光中心的结果.     

多孔硅甲苯悬浮体系电泳沉积的研究

用电阻率为 80～ 10 0Ω· cm的 n型硅基底制备了多孔硅 (PS) ,将其用超声波振荡的方法分散到甲苯中制成稳定的悬浮体系。发现该体系中的多孔硅微粒可以在电场下作定向的电泳迁移 ,在正极上形成良好的沉积层。实验发现甲苯悬浮体系的荧光强度与浓度成良好的线性的关系 ,并测定了电泳沉积过程中甲苯分散体系的荧光强度与电泳沉积时间和外加电场强度的关系。用扫描电镜 (SEM)对不同条件下得到的多孔硅沉积层及原生多孔硅作了形貌观察比较。用 X光电子能谱 (XPS)和红外透射光谱对原生多孔硅和多孔硅沉积层进行了成分分析。研究表明 ,多孔硅的电泳沉积可以用于微粒的可控组装方法。     

不同方法制备的TiO2薄膜电极光电性能比较

用Doctor-Blade和Dip-Coating方法制备了粒子膜和溶胶-粒子膜两类TiO2纳米晶薄膜电极,利用BAS—100B电化学工作站和IM-6e交流阻抗仪研究了两种电极的光电化学性能．由光电流和交流阻抗谱（EIS）的测试结果发现,由于引入溶胶,增加了TiO2纳米粒子与基底的附着力,改善了TiO2纳米粒子与基底以及TiO2纳米粒子之间的电性接触,使得溶胶-粒子膜电极的电荷转移电阻远远小于粒子膜电极,提高了溶胶-粒子膜电极的光电流．     

采用原电池法制备纳米多孔硅

利用原电池法在硅片表面制备了纳米多孔硅层;用扫描电镜SEM和原子力显微镜AFM观察了多孔硅表面形貌：原电池法与电化学法得到的多孔硅孔径均在10～20nm范围．研究结果表明：铂膜电极厚度的增大以及铂膜电极与暴露硅片面积比的增大,会导致多孔硅层的厚度增大．热学模拟结果表明：以纳米多孔硅作为绝热层可获得与悬浮结构相同的效果．     

硅基含能材料爆炸性能研究

采用电化学双槽腐蚀法在P型单晶硅片表面生长多孔硅膜。通过扫描电镜（SEM）、能量色谱（EDS）对多孔硅结构参数以及多孔硅含能材料性能进行了分析,同时进行了爆炸性能测试。结果表明：采用电化学腐蚀法可以制备出20nm左右孔径的多孔硅膜;通过原位装药技术形成的多孔硅含能材料在开放空间以及热能、机械撞击、电能、激光能量刺激下发生猛烈爆炸作用。     

Photocatalytic Properties of Porous Silicon Nanowires

Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon nanowires with controlled density. These combined advancements make the porous silicon nanowires an interesting material for photocatalytic applications. We show that the porous silicon nanowires and platinum nanoparticle loaded porous silicon nanowires can be used as effective photocatalysts for photocatalytic degradation of organic dyes and toxic pollutants under visible irradiation, and thus are of significant interest for organic waste treatment and environmental remediation.     

电偶腐蚀法制备多孔硅的研究EI

用电偶腐蚀法制备多孔硅,主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响,并且结合SEM,AFM等测试手段对所制备的多孔硅的表面形貌进行了分析。实验发现,在相同的腐蚀条件下,多孔硅的厚度随铂电极的厚度以及铂电极与腐蚀硅片的面积比的增大而增大。     

金刚石膜在多孔硅发光中的应用

采用微波等离子体化学气相沉积（MPCVD）法成功地在多孔硅上沉积出均匀、致密的金刚石膜。光致发光测量表明,金刚石膜可以有效稳定多孔硅的发光波长和发光强度,具有明显的钝化效应。金刚石膜的这个特点再加上高硬度特性使金刚石膜成为多孔硅的一种潜在的钝化膜。     

Porous silicon upon multicrystalline silicon: Structure and photoluminiscence

Ultrathin porous silicon layers have been stain-etched upon multicrystalline silicon (multi-Si) substrates. We studied optical and structural properties of porous silicon by photoluminescence, photo-luminescence excitation, reflection, atomic force microscopy and scanning tunnel microscopy methods. It was observed that the thickness of porous silicon did not exceed 20 nm. The photoluminescence method has shown that photoluminescence spectra of porous silicon of different grains have shown that they differ insignificantly (∼10%) in intensity. It was found that por-Si layers with optimal antireflection characteristics was obtained during etching time 7 min. In the paper the comparison of the reflection characteristics of investigated samples por-Si with industrial antireflection coating is presented.     

多孔硅对单晶硅少子寿命影响状况的研究

以p型单晶硅片为研究对象,在单晶硅片表面采用化学腐蚀方法制备多孔硅层,通过实验选取制备多孔硅的最佳工艺条件,采用SEM观察多孔硅表面形貌,以及用微波光电导法测试少子寿命的变化情况。结果表明,在相同的腐蚀溶液配比条件下腐蚀11min得到的多孔硅层的表面形貌最好,孔隙率最大。在850℃下热处理150min时样品少子寿命的提高达到最大,不同腐蚀时间的样品少子寿命提高程度不同,腐蚀11min的样品少子寿命提高最大,约有10%左右。多孔层的形成伴随着弹性机械应力的出现,引起多孔层-硅基底界面处产生弹性变形,这有利于缺陷和金属杂质在界面处富集。另外,多孔硅仍具有晶体结构,但其表面方向上的晶格参数要比初始硅的晶格参数大,也有利于金属杂质向多孔层迁移。     

Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction

Lithiation and delithiation of porous silicon were studied using reflection high energy electron diffraction (RHEED), two-dimensional photoelectron diffraction, and a stereo atom-scope, which is realized by the combination of a display-type spherical mirror analyzer and circularly polarized soft X-ray. A nanosized porous silicon layer was prepared by electrochemical etching of p-type silicon (001) wafer in ethanolic solutions containing hydrofluoric acid. The morphology of the as-grown porous silicon as observed using SEM was filled with about 9 nm holes. This porous silicon also retains the crystallographic orientation of the wafer from which it was etched and is optically active with visible photoluminescence. The measured RHEED pattern and 2π steradian Si 2p photoelectron diffraction pattern from Si (001) surface showed an increase in lattice constant by lithiation, and that change in lattice constant was restored to its original values by delithiation.     

Formation of nanosize poly(p-phenylene vinylene) in porous silicon substrate

We report the results of optical investigations in porous silicon (PS)/poly(p-phenylene vinylene) (PPV) systems obtained by filling the pores of silicon wafers with polymer.By scanning electron microscopy (SEM), IR, and Raman spectroscopy, we observed that the porous silicon layer was thoroughly filled by the polymer with no significant change in the structure of the materials. This suggests that there is no interaction between the components. On the other hand, the photoluminescence (PL) spectra of the devices investigated at different temperatures (from 11 to 290 K) showed that both materials are active at low temperatures. Porous silicon has a band located at 398 nm while PPV has two bands at 528 and 570 nm. As the temperature increases, the PL intensity of porous silicon decreases and that PPV is blue shifted. A new band emerging at 473 nm may indicate an energy transfer from the porous silicon to PPV, involving short segments of the polymer. The band of PPV located at 515 nm becomes more dominant and indicates that the nanosize polymer films are formed in the pores of the silicon layer, in agreement with the results obtained by SEM, IR, and Raman analyses.     

多孔硅基发光材料的研究进展

介绍了多孔硅经表面钝化后,其发光强度和谱线峰位的稳定性,以及多孔硅激光染料镶嵌膜的荧光光谱等方面的最新成果。