Direct-Current Field Dependence of Dielectric Properties in Alumina-Doped Barium Strontium Titanate

The dielectric properties of (Ba_0.6Sr_0.4)TiO₃ and Al₂O₃-doped (Ba_0.6Sr_0.4)TiO₃ have been characterized. The grain size of the specimen is maximum for (Ba_0.6Sr_0.4)TiO₃ that has been doped with 1 wt% Al₂O₃. The density and the real part of the relative dielectric constant each decrease as the Al₂O₃ content increases. The loss factor is minimum for (Ba_0.6Sr_0.4)TiO₃ that has been doped with 2 wt% Al₂O₃. The dielectric constant of the specimens decreases as the applied dc field increases. The influence of the dc field on the loss factor is much less than that on the dielectric constant. The tunability is ∼24% for (Ba_0.6Sr_0.4)TiO₃ that has been doped with 1 wt% Al₂O₃.     

Dopant Effect on Local Dielectric Properties in Barium Titanate Based Electroceramics Determined by Transmission EELS

Local electronic excitations of Nb-doped BaTiO₃ electroceramic were investigated using low-loss electron energy loss (EEL) spectroscopy with a transmission electron microscope. The variations in electronic structure of the BaTiO₃ were monitored as a function of Nb content by using Kramers-Krönig analysis of the low-loss EEL spectra. We found that the valence state of Nb (+5) as compared with that of the Ti (+4) introduces changes in the valence and conduction band states of BaTi_{1− x} Nb _x O₃ samples. The real part of the dielectric function, Re(1/ɛ), displays an increasingly less negative character with higher amounts of dopant and the valence plasmon exhibits "quasi-plasmon" characteristics with the addition of Nb (at 0.0–1.8 at.%). Further, the plasmon energy shifts (by about 0.5 eV) to higher values with Nb additions. Significant changes take place in oscillator strengths of excitations in local (nanometer-scale) regions of the perovskite samples. This investigation demonstrates a method to quantitatively assess electronic properties, at the submicrometer scale, of doped ceramics used in electronic and electrooptical applications.     

Effect of the Liquid-Phase Characteristic on the Microstructures and Dielectric Properties of Donor- (Niobium) and Acceptor- (Magnesium) Doped Barium Titanate

Changes in the microstructure and dielectric properties with the variation of the donor/acceptor ratio in BaTiO₃ ceramics were investigated. In donor-rich specimens, a liquid that appeared during sintering did not penetrate into grain boundaries. However, in the acceptor-rich specimens, the grains were separated by a liquid film during sintering. The much higher mobility of the liquid film than that of the grain boundaries was suggested to cause extensive grain growth in acceptor-rich BaTiO₃. The macroscopic homogenization of dopants because of grain growth in acceptor-rich specimens resulted in changes in the dielectric properties.     

Microstructure and Dielectric Properties of Barium Strontium Magnesium Niobate

Dielectric properties and their related microstructural characteristics in solid solutions of (1 – x )Ba(Mg_1/3Nb_2/3)O₃– x Sr(Mg_1/3Nb_2/3)O₃ (BMN–SMN, or BSMN) were investigated by measuring the relative permittivity (ɛ_r), Q values, and temperature coefficient of resonator frequency (τ_f), and by observing microstructure using transmission electron microscopy. When the tolerance factor ( t ) was >0.99 in BSMN with composition 0 < x < 0.5, where the tilting of oxygen octahedra was not involved, the microstructure included only 1:2 ordered phase. In the region where 0.99 > t > 0.97 with 0.7 < x < 1.0, the phase due to the antiphase tilting of oxygen octahedral, the disordered phase, and the 1:2 ordered phase were also present. In a few of the grains, core–shell-type structures, whose main components were dislocations and stacking faults, were found in the solid solution of BSMN.     

Preparation, Structure, and Properties of Thermally and Mechanically Improved Aluminum Titanate Ceramics Doped with Alkali Feldspar

Aluminum titanate (AT) ceramic materials doped with alkali feldspar ((Na_0.6K_0.4)AlSi₃O₈) have been prepared. These ceramics exhibited high sinterability, large resistance to thermal decomposition, and large flexure strength. The existence of liquid-phase feldspar at sintering temperatures promoted the formation of AT ceramics as the sintering agent. It was considered that silicon ions substituting for aluminum ions at the surface of AT crystal grains lowered the surface energy and hindered the diffusion of Ti⁴⁺ and Al³⁺, giving rise to the large resistance to thermal decomposition. As a result, doping with alkali feldspar was found to effectively improve the mechanical and thermal properties of AT ceramics.     

Microwave Dielectric Properties of Gallium-Doped Hexagonal Barium Titanate Ceramics

High-permittivity and low-loss ceramics with composition BaTi_0.92Ga_0.08O_2.96 have been prepared in the BaO–Ga₂O₃–TiO₂ system using the mixed-oxide route. This compound forms as the hexagonal polymorph (6 H ) of BaTiO₃ with the space group P 6₃/ mmc . The dielectric properties of dense ceramics have been studied, at microwave frequencies, with the ceramics fired at 1450°C under flowing oxygen gas; the results are a relative permittivity, ɛ_r, of ∼74 and a quality factor, Q · f _r, of ∼7815 at 5.5 GHz. The quality factor is strongly influenced by the sintering conditions (temperature and atmosphere), whereas the relative permittivity is not influenced significantly by ceramic processing for pellets ≥93% of the theoretical X-ray density. To our knowledge, this is the first report of microwave dielectric resonance in a perovskite-type BaTiO₃-based ceramic.     

Fluorine as a Donor Dopant in Barium Titanate Ceramics

We have studied the electrical properties and microstructure of fluorine-doped BaTiO₃ ceramics. The samples were prepared using a classical ceramic technology that involved the calcination of intimately mixed powders of BaCO₃, TiO₂, and BaF₂. When the samples were sintered in untreated ambient air, the fluorine from the sample reacted with water vapor and formed gaseous HF. To prevent this hydrolysis of the fluorine, we sintered the samples in dried air. The fluorine-doped BaTiO₃ ceramics sintered in a dry atmosphere showed microstructures and electrical properties typical of donor-doped BaTiO₃. The samples containing up to 0.3 mol% of fluorine were coarse-grained, semiconducting, and displayed a remarkable PTCR effect. In contrast, the samples with a higher fluorine concentration were fine grained and insulating. A SIMS elemental mapping of the samples showed that the fluorine was distributed throughout the microstructure of the semiconducting samples; however, the fluorine concentration was enriched at grain boundaries and in the BaTi₂O₅ intergranular phase.     

Strontium Zirconate and Strontium Titanate Ceramics for High-Voltage Applications: Synthesis, Processing, and Dielectric Properties

The synthesis, processing, and electrical properties of SrZrO₃ and SrTiO₃ materials have been examined. Phase-pure powders of SrZrO₃ and SrTiO₃ materials were synthesized using the Pechini method. Powder processing routes that used water and 2-propanol as carrier fluids were developed to achieve high green densities, which resulted in sintered densities of >99% of the theoretical density. The relative permittivity and average breakdown strength for carefully processed SrZrO₃ were 60 and 40 V/μm; the corresponding values for SrTiO₃ were 400 and 35 V/μm. The higher breakdown strengths suggest that these materials can be used in high-voltage capacitor applications.     

Tetragonal Nanocrystalline Barium Titanate Powder: Preparation, Characterization, and Dielectric Properties

Nanocrystalline tetragonal-BaTiO₃ powder was prepared using a hydrothermal method, under moderate conditions, and with a high precursor concentration. Characterization via X-ray diffractometry and differential scanning calorimetry confirmed that the average particle size and tetragonal content of the prepared powder were 70 nm and 80%, respectively. The sintered sample made from the prepared powder had a room-temperature dielectric constant of 6900, which was high for BaTiO₃.     

Suppression of Liquid Film Migration and Improvement of Dielectric Properties in Niobium-Doped Strontium Titanate

In an attempt to improve the dielectric properties of SrTiO₃-based boundary-layer capacitors (BLCs), the effects of infiltrant composition on the liquid film migration and dielectric properties in 0.2-mol%-Nb₂O₅-doped SrTiO₃ were investigated. Powder compacts were sintered at 1480°C for 5 h in 5H₂·95N₂ and infiltrated with 80Bi₂O₃·20( x CaO–(1 – x )BaO) at 1300°C for various times in air. When the value of x was 0, 0.2, 0.7, and 1.0, liquid film migration occurred, which formed a new solid-solution layer containing solute species. On the other hand, when x = 0.5, no liquid film migration was observed. The effective dielectric constant was the highest in the sample with x = 0.5 (no liquid film migration), and it decreased as the migration distance increased. In addition, the loss tangent was the lowest, <1%, in the sample with x = 0.5. Agreement between the estimated effective dielectric constants and the measured values showed that the suppression of liquid film migration improved the dielectric constant. The agreement further indicated that the prediction of the dielectric constant in SrTiO₃-based BLCs was possible using a two-layer model with a liquid-infiltrated layer and a SrTiO₃-based oxidized layer.     

钽掺杂对钛酸钡基陶瓷介电性能影响的研究

研究了微量钽掺杂对钛酸钡基陶瓷介电常数、介电损耗以及温度稳定性等介电性能的影响.利用XRD、SEM等现代分析手段分析了材料的显微结构,分析了显微结构与材料介电性能的关系,得到了性能较为优良的电容器基料配方.     

钛酸锶钡陶瓷材料的掺杂改性

钛酸锶钡(BST)是一种重要的具有钙钛矿结构的铁电材料。顺电态下,其介电损耗较小,结构稳定。因此对顺电态下的BST进行掺杂改性是近年来铁电材料的研究热点之一。本文简要介绍了目前国内外科研工作者利用稀土、碱土氧化物进行掺杂时对BST的微观结构、介电损耗、介电常数以及可调率方面的影响。     

Effect of Rare-Earth Dopants on Mechanical Properties of Alumina

We report here about the effect of rare-earth dopants on the improvement of room-temperature mechanical properties of alumina. Rare-earth ions (RE = Yb³⁺, Er³⁺, and La³⁺) of different ionic radii in a minimum concentration of 1000 ppm were added as dopants individually to high-purity alumina and densified by pressureless sintering. High strength of about 700 MPa was attained for Yb-doped alumina sintered at 1400°C. And, high toughness of about 7.0 MPa·m^1/2 was attained for Er- and La-doped alumina samples.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Effect of Silver Addition on the Dielectric Properties of Barium Titanate-Based X7R Ceramics

Different amounts of silver (0.5–10 wt%) have been mixed with EIA X7R-type ceramic powders based on barium titanate. The XRD analysis indicated that no phases other than BaTiO₃ and silver were present in the doped ceramics; it further suggested that no reaction took place between BaTiO₃ and silver during calcination and sintering. SEM observation showed that the silver particles presented island distribution in the BaTiO₃ ceramic matrix. The densification and dielectric properties of the silver-doped ceramics in disk form were investigated. A large amount of silver addition (>1 wt%) was found to improve the sintered density and dielectric properties. The temperature coefficient of capacitors of the ceramics doped with 10 wt% silver still met the X7R characteristics, and the dielectric constant of the ceramics at room temperature was >6000, which is the highest dielectric constant in the BaTiO₃-based X7R system.     

Tunable Microwave Properties of Barium Titanate-Based Ferroelectric Glass-Ceramics

BaTiO₃-based ferroelectric glass-ceramics with the composition 0.65(Ba_{1− X} Sr _X )TiO₃·0.27SiO₂·0.08Al₂O₃ ( X = 0.2–0.6) were fabricated, and their tunable dielectric properties were measured at microwave frequency. Major crystalline phases that precipitated during thermal treatment up to 1000°C were (Ba,Sr)TiO₃, Ba₂TiSi₂O₈, and BaAl₂Si₂O₈. The Curie temperatures of the heated bulk samples were successfully tuned near room temperature at the composition between X = 0.2 and 0.3. A thick-film sample with X = 0.3 showed 27% tunability at 5 GHz under 10 kV/cm bias voltage.     

铌酸锶钡/钛酸锶钡介电常数预测模型研究

首次应用粉末-溶胶工艺合成出铌酸锶钡/钛酸锶钡复相陶瓷(SBN/SBT)。以Clausius(克劳修斯)-Mosotti(莫索缔)方程为基础,采用混合对数法则,通过实验得到的复合材料的晶格参数和铌酸锶钡、钛酸锶钡的理论极化率,建立了描述铌酸锶钡/钛酸锶钡复相陶瓷的介电常数预测模型,通过数学模型得到的预测数值与实验数值吻合。     

Effect of External Electric Field on the Grain-Growth Behavior of Barium Titanate

The effect of an external electric field on the grain-growth behavior of acceptor Mg-doped, undoped, and donor Nb-doped BaTiO₃ ceramics was investigated. The acceptor-doped and undoped specimens showed enhanced grain growth at the positive-biased region. On the other hand, for the highly donor-doped specimens, grain growth was enhanced in the negative-biased region. The results have been explained in terms of defect polarization and the consequent change in the boundary potential. It has been suggested that liquid penetration into grain boundaries is critically dependent on the boundary potential.     

Effect of Direct-Current Biasing on the Dielectric Properties of Barium Strontium Titanate

Ba_{1− x} Sr _x TiO₃ (BST, x = 0 to x = 1) ferroelectric ceramics doped with 1.0 mol% MgO and 0.05 mol% MnO₂ were prepared with a rate-controlled sintering profile. As the strontium molar fraction x increased, the average grain size decreased from 14 μm for x = 0 to 2 μm for x = 1. Temperature dependence of the dielectric properties was measured as a function of dc biasing. At 10°C above the Curie temperature, the changes of dielectric constant at 5000 V/cm were 28%, 17%, 26%, and 36% for x = 0, 0.25, 0.5, and 0.75, respectively. The reduction of dielectric constant by the applied dc biasing was fitted by a phenomenological equation that was based on Devonshire's theory. From this phenomenological equation, an anharmonic coefficient, which was an order parameter of the anharmonic interactions, was calculated for each composition. As the strontium molar fraction increased, these coefficients increased from 2.45 × 10⁻¹⁹ cm²V⁻² for x = 0 to 5.90 × 10⁻¹⁹ cm²V⁻² for x = 0.75. A similar trend was observed on the dc field dependence of the dielectric loss, except at high field for x = 0, of which a high loss was obtained. A two-element circuit model was proposed to explain the effect of high dc biasing on the dielectric loss.