用于无绳电话的硅MMIC功率放大器

最近，德国西门子公司和慕尼黑微电子技术协会，成功研制出完全集成的1．3W硅MMIC。该芯片是用25GHZ的fT，0．8μm三层相互连接的硅双极生产工艺完成的，该功率放大器适用于3．4V至5V的无绳电话手机，其工作频率1．9GHz，输出功率0．4W（26dBm）至1．3W（1．1dBm），功率附加效率达到33％。     

PAE>30%的小型可靠70WX波段功率组件

推《1996IEEEMTT－SInt．MWSymp．Dig．》报道，得克萨斯仪器公司的JamesSweder等设计、开发出一种结构简单、易于在微波自动化工厂进行批量生产的小型X波段固态功率组件。该组件由6个高可靠12W的HFETMMIC功率放大器组成，尺寸为63．5mm×28mm×5.08mm，性能如表1所示。在9．5－9．9GHz下，组件的功率大于70W，功率附加效率（PAE）大于30％，最高点功率超过77W，相关的功率附加效率大于31％，最小增益大于13dB。PAE>30%的小型可靠70WX波段功率组件@曲兰欣…     

A 4–9 GHz 10W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a balance configuration, and presents power gain of 7.3 ＋ 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency （PAE） at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

面向无线宽带应用的LDMOS射频功率晶体管

这两款LDMOS射频功率晶体管主要面向无线宽带应用,例如在2．5～2．7GHz频段上运行的WiMAX应用。在WiMAX信号条件下,提供16W平均输出功率时,PTFA260851E／F 85W可实现14dB增益（典型值）和22％效率（典型值）。在WiMAX信号条件下,提供32W平均输出功率时,PTFA261 702E 170W可实现15dB增益（典型值）和20％效率（典型值）。     

DX33型硅微波功率静电感应晶体管

<正> DX33型硅微波功率静电感应晶体管是一种1GHz下输出功率≥10W、增益5～19dB的微波功率器件。具有非饱和型的三极管特性如图1所示。器件在1GHz下其线性输出功率可达9W、线性增益可达8～12dB,最大输出功率12W。在0.8GHz下最大输出功率可达13～15W,功率增益5～11dB。器件漏极效率≥30％。 DX33型是由电子工业部第十三研究所在1982年新研制的产品,并于1982年12月通过了     

一个4-9GHz 10W 宽带功率放大器

设计并制作了4-9GHz宽带混合集成功率放大器,在6-8GHz频带内功率能达到10W,其余频段内功率也能达到6W以上。电路采用平衡放大器形式,整个频段内增益为7.3dB±0.9dB,在8GHz频点处功率附加效率（PAE）为39%。输入输出驻波均小于-10dB。     

94 GHz TE_（02）-TE_（11）模式变换链的设计与模拟

本文在电磁场耦合模理论的基础上利用MATLAB优化工具对W波段回旋管用TE02-TE01-TE11模式变换链进行了详细研究与分析。应用编制的仿真程序对W波段TE02-TE01-TE11模式变换链进行了设计和数值模拟,通过结构参数优化,获得了性能良好的模式变换链。TE02-TE01和TE01-TE11模式变换器在中心频率94 GHz处的转换效率分别为96.3%和94.1%,对应带宽分别为4 GHz（转换率95%以上）和2 GHz（转换率90%以上）。为了进一步验证设计的模式变换链的性能,利用高频模拟仿真软件HFSS对优化的模式变换链进行了模拟仿真,模拟结果与利用计算程序得到的结果基本吻合。     

L波段50W GaAs MESFET

据日本《NEC技报》1997年第3期报道，NEC公司化合物器件事业部最近新开发了L波段的50W大功率GaAsMESFET。该器件的截面结构如图所示，采用了栅长为1．0μm的WSi肖特基栅，工作于B类推挽电路。该器件的饱和输出功率为537W，1dB增益压缩输出功率为51．3W，线性增益13．1dB，最大漏极效率为57％（频率f=1．5GHz，偏置VDS=10V，IDS=3％IDSS）。该器件作为固态功率放大器（SSPA）用于数字移动电话基地局。L波段50W GaAs MESFET@孙再吉     

802．11a／b／g／n FEM前端模块

Avago Technologies（安华高科技）近日宣布,推出完整的射频（RF）802．11a／b／g／n前端模块产品,可在2．4GHz和4．9到5．9GHz等频带下工作,完全集成的AFEM-9601多功能模块兼容无线局域网（WLAN）标准,并面向非常注重效率和性能表现的无线网络大型数据文件,例如视频传送的多输入多输出（MIMO）应用进行优化。     

BLL6H1214-500：LDMOS晶体管

NXP推出针对L波段雷达应用的横向扩散金属氧化物半导体（简称LDMOS）晶体管，该晶体管在1.2GHz到1．4GHz的频率之间带来达500W的RF输出功率。     

Diode-pumped Q-switched Extra-cavity Frequency-doubled Nd：YVO4/KTP Green Laser

A diode-pumped acousto-optical（A-O） Q-switched extra-cavity frequency-doubled Nd：YVO4/KTP （KTiOPO4） green laser formed with a simple plane-plane cavity has been demonstrated. With the incident pump power of 12.7W, A-O Q-switched average output power at 1064nm was 3.81W with a duration of 25 ns at a repetition rate of 20 kHz, extra-cavity frequency doubling with KTP as the nonlinear crystal yielded the maximum output power of 1. 92 W at 532 nm, the corresponding optical conversion efficiency from 1064nm to 532nm light is 50.4%. The continuous-wave（CW） laser properties of diodepumped Nd：YVO4 crystal operating at 1064nm have been studied. With the incident pump power of 25 W, the maximum CW output power of 13.81 W was obtained with the corresponding optical conversion efficiency of 55.24%.     

A 4-9 GHz 10 W wideband power amplifier

A 4-9 GHz wideband high power amplifier is designed and fabricated, which has demonstrated saturated output power of 10 W covering 6-8 GHz band, and above 6 W over the other band. This PA module uses a bal-ance configuration, and presents power gain of 7.3 ± 0.9 dB over the whole 4-9 GHz band and 39% power-added efficiency (PAE) at 8 GHz. Both the input and output VSWR are also excellent, which are bellow -10 dB.     

X-band performance of GaAs power f.e.t.s

The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.     

850mW全固态腔内和频554．9nm连续黄光激光器

报道了全固态连续波554．9nm黄光激光器,黄激光是分别由Nd：YAG和Nd：YVO4晶体的1342nm和946nm谱线非线性和频产生,两条谱线在各自晶体对应能级跃迁分别为^4F3/2-^4I11／2和^4F3／2-^4I9/2。实验中采用复合折叠腔结构,利用LBO晶体I类临界相位进行内腔和频,当注入到Nd：YAG和Nd：YVO4晶体的泵浦功率分别为20W和8W时,获得850mW的TEMoo连续波554．9nm黄激光输出。4小时功率稳定度优于±2．5%.     

High-power InP MISFETs

InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.     

A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications

GaAs FET amplifier modules for 20 GHz band satellite communications have been developed using newly developed power FETs. The deep recess gate structure was adopted in the power FET, which improved both power output capability and power gain. Power added efficiency of 22 percent with more than 1 W power output has been achieved with 3 mm gate width FETs. The amplifier modules containing two-stage internally matched FET's can be hermetically sealed in metal packages. The modules had 8.4-8.9 dB linear gain in the 17.7-18.8 GHz band and 7.9-8.4 dB linear gain in the 18.5-19.6 GHz band. The power output at 1 dB gain compression point was more than 0.5 W. The third-order intermodulation distortion ratio was 81-83 dB at 18.2 GHz and 77-80 dB at 18.9 GHz, when individual output signal power was -4 dBm.     

大信号设计GaAs MESFET功率合成

利用ＧａＡｓＭＥＳＦＥＴ功率特性的线性化模型，求出ＧａＡｓＭＥＳＦＥＴ近似最佳功率负载阻抗，为利用谐波平衡法计算提供初值。然后，使用自行研制的谐波平衡分析软件包，进行ＧａＡｓＭＥＳＦＥＴ大信号模型参数的提取和非线性电路模拟计算。将两只总栅宽为９．６ｍｍ的ＧａＡｓＭＥＳＦＥＴ管芯，利用内匹配功率合成技术，在Ｃ波段（５．５～５．８ＧＨＺ）制成１ｄＢ压缩功率大于８Ｗ，典型功率增益９ｄＢ的ＧａＡｓＭＥＳＦＥＴ内匹配功率管。     

全离子注入C波段功率单片放大器及内匹配功率单片放大器

报道了全平面C波段功率单片放大器及四单片合成放大器研究结果。单片放大器采用全离子注入工艺，均匀性好，平均成品率40％，可靠性高。工作频率4．7—5．2GHZ，中心频率5．0GHz处输出功率2．5W，增益15dB，功率附加效率31．5％。单片放大器芯片面积2．8mm×2．0mm，四路合成的4×MMIC频率范围不变，中心频率4．95GHz处输出功率8．2W，增益13dB，功率附加效率26％，四路合成效率接近80％。实验结果与理论预测基本吻合。     

A circuit design for 2-Gbit/s Si bipolar crosspoint switch LSIs

An 8×8 and an expandable 16×16 crosspoint switch LSI utilizing a new circuit design and super self-aligned process technology (SST-1A) are discussed. The LSIs successfully switched with a bit error rate of less than 10^-9 at 2.5 Gb/s using a 2⁹-1 pseudorandom NRZ sequence. Pulse jitter was limited to less than 80 ps at 1.2 Gb/s by utilizing a small internal voltage swing (225 mV) employing a differential CML cell, including a selector. The LSIs have an ECL-compatible interface, -4-V and -2-V power supply voltages, and a power dissipation of less than 0.9 W for the 8×8 LSI and 2.8 W for the expandable 16×16 LSI     

A compact, highly stable CW CO2 laser without brewster windows

We describe an open resonator, quasi sealed-off; 70cm cavity length CO₂ laser with very high stability of power and frequency, which lases on 96 lines from 9R42 (2W) to 10P52 (5W) with a power of >11W on 9R20, 9P20, 10R20 and 10P20, plus on 18 hotband lines with ≈2W. This laser was used successfully to pump an FIR ring laser [1] enabling an FIR power stability of ΔP/P ≈ 10^?4 by use of a simple PI control loop, thus demonstrating its superb frequency stability.