位错和位错偶沿单─滑移系从裂纹尖端的发射

采用计算机模拟了位错和位错偶沿单一滑移系从裂纹尖端的发射,考察了滑移面取向、外加载荷、晶格摩擦力以及位错发射的临界应力强度因子对所发射的位错数量、塑性区与无位错区大小以及裂关残余应力强度因子的影响研究表明,位错从裂纹尖端发射的临界应力强度因子对无位错区的存在和其大小起决定作用,而外加载荷与晶格摩擦力主要影响位错发射的数量以及塑性区大小．在Ｉ型载荷作用下,滑移面与裂纹面的夹角越大,从裂尖发射出的位错数量越多,位错对裂纹的屏蔽效应也越大当裂纹发射位错后的残余应力强度因子仍然较大时,位错偶就有可能在裂纹尖端附近产生井沿着几个滑移面发射,但发射出的位错偶对裂纹没有明显的屏蔽作用在滑移面不垂直于裂纹面时,发射出的位错或位错偶关于裂纹面呈不对称分布     

位和位错偶沿单一滑移系从裂纹尖端的发射

采用计算机模拟了位错和位借偶沿单一滑移从裂纹尖端的发射,考察了滑移面取向,外加载荷,晶格摩擦力以及位错发射的临界应力强度因子对所发射的位错数量,塑性区与无位错区大小以及裂尖残余应力强度因子的影响。     

裂纹尖端塑性区和无位错区的微观模拟

用细观断裂力学研究了刃型位错从Ⅰ型，Ⅱ型及Ⅰ Ⅱ复合型裂纹尖端沿多个滑移面的发射以及裂纹周围无位错区和塑性区的形状和大小．结果表明，Ⅱ型裂纹塑性区形状和宏观断裂力学算出的塑性区形状有所不同，而I型裂纹塑性区形状则类似；当外载荷相同时，Ⅱ型裂纹的塑性区比Ⅰ型裂纹的塑性区要大得多；复合型裂纹的塑性区形状和大小更接近Ⅱ型裂纹．各种裂纹尖端周围均存在无位错区，其形状与相应的塑性区相似。     

FeNiCu合金中位错对微裂纹扩展影响的分子动力学研究

采用分子动力学方法研究了FeNiCu合金在单轴应力加载下的微裂纹扩展行为。分析了相对于裂纹不同角度位置的位错对微裂纹扩展的影响。结果表明,在微裂纹扩展过程中,裂纹在尖端主要的变形机制为滑移带和位错,裂纹尖端在滑移方向<110>发射位错。随着位错的连续增殖,位错密度逐渐增大,形成位错塞积,导致产生位错针扎,微裂纹沿此方向进行扩展。而预设不同滑移方向的位错对微裂纹扩展存在阻碍作用,在位错阻碍效果失效前,当位错相对位于裂纹30°时对裂纹的扩展运动阻碍效果最大,45°次之,60°最小。其中30°位错的滑移方向与裂纹的滑移方向垂直,且应力峰值最大,表示拉伸需要的外应力最大,表现出的阻碍效果最明显。这种抑制微裂纹扩展的效果越强,在裂纹尖端的应力集中现象越明显。而在抑制作用失效后,缺陷处会释放大量势能,使裂纹快速扩展,对材料造成破坏。     

双相不锈钢中裂纹尖端塑性变形行为的透射电镜原位观察

在透射电子显微镜下对铁素体-奥氏体双相不锈钢薄膜试样进行了动态拉伸试验,原位观察了裂纹尖端塑性变形过程和位错分布,发现在铁素体相和奥氏体相中,裂尖位错组态有明显差异。在铁素体相中,裂尖无位错区较大,且让错易发生交滑移,在裂纹前端形成较大的塑性区。在奥氏体相中,裂尖无位错区较小,发射的位错在其滑移面内逆塞积。两相中裂尖滑移系的选择都与裂尖Schmid因子有关。但当形变较大时,奥氏体相中裂尖二次滑移系的选择不再为裂尖Schmid因子所支配。     

钴基高温合金裂尖塑性区位错结构的原位观察

走向凝固的钴基高温合金在原位拉伸研究中发现了两种裂尖塑性区位错结构,在拉伸轴为[511]时,从裂尖发射的是不全位错,在整个塑性区中位错始终以扩展位错的形式存在;在拉伸怕为[121]时,从裂尖发射的是全位错,位错在离开裂尖向试样内部运动过程中发生扩展分析了裂纹尖端应力状态对裂尖塑性区位错结构的影响。     

钴基高温合金尖塑性区位错结构的原位观察

定向凝固的钴基高温合金在原位拉伸研究中发现了两种裂尖塑性区位错结构,在拉伸辊为［５１１］时,从裂尖发射的是不全位错,在整个塑性区中全错始终以扩展位错的形式存在;［１２１］时,从裂尖发射的是全位错,位错在离开裂尖向试样内部运动过程中发生扩展,分析了裂纹尖端应力状态对裂尖塑性区位错结构的影响。     

脆—韧转变的模型化

众多结晶体在低温环境下呈现解理断裂，在高温环境下呈现塑性断裂。在过渡温区，解理断裂的应力随温度增加而增加，反映了屈服应力的下降以及裂纹尖端区塑性的相应增加。裂尖塑性可钝化裂纹并因塑性区中的压应力而屏蔽裂纹。本文简短评述了脆－韧转变模型。在该模型中，计算屏蔽效应的塑性区是由位错的产生、运动和相互作用形成的，这些位错匀在含裂尖的滑移面上运动，并且服从速度／应力／温度定律。对模型在实验结果中的应用也进行     

疲劳裂纹尖端的位错结构

在双相钢物理短裂纹门槛区，观察到稳定的位错胞和墙结构；长裂纹门槛区，在铁素体／马氏体相界堆垛位错密度大，有形成位错胞的趋势．长裂纹扩展第二阶段，铁素体晶粒内具有单向滑移线（Ｒ＝０，－１）和正交网状（Ｒ＝－１）的位错结构，长裂纹扩展第三阶段，位错稀少，但单滑移、双交滑移位错线明显拉长，说明裂纹尖端位错组态是应变历史的产物．疲劳裂纹扩展门槛区形成的位错胞和墙是一亚稳态结构，与门槛循环应力应变处于动态平衡，也是一微观结构参数．     

TC4ELI合金疲劳裂纹尖端塑性区对裂纹扩展的影响

研究了TC4ELI合金片层组织与短棒α组织中的疲劳裂纹尖端塑性区及裂纹扩展行为.首先通过SEM及TEM观察比较两种显微组织下的疲劳裂纹尖端塑性区,讨论两种显微组织中裂纹尖端塑性区对疲劳裂纹扩展路径及扩展断口的影响,分析裂纹扩展路径和裂纹尖端塑性区对裂纹闭合及裂纹扩展速率的影响.结果表明:与短棒α组织相比,片层组织中具有较大的裂纹尖端塑性区及曲折的裂纹扩展路径,并最终从疲劳裂纹闭合的角度,解释了片层组织具有较低的疲劳裂纹扩展速率的原因.     

IN-SITU OBSERVATION OF CRACK TIP DEFORMATION IN A DUPLEX STAINLESS STEEL

The development of dislocation structures in the plastic zone ahead of a crack tip has been in-vestigated in a duplex stainless steel during in-situ deformation experiments in a scanningtransmission electron microscope.It was found that the dislocation distribution wassignificantly different in the ferrite and in the austenite.In the ferrite grains,the dislocationsemitted by the crack tip may cross-slip out of the original slip planes and form a broad plasticzone.However,in the austenite,the dislocation free zone is small and the dislocations emittedby the crack pile up in its slip plane.The selection of slip systems at the crack tip depends onthe crack tip Schmid factors in both phases.But after large deformation,the selection of thesecond slip systems at the craek tip in austenite does not depend on the Schmid factors.     

A unified model of environment-assisted cracking

Environment-assisted cracking is caused by enhanced crack-tip plastic deformation. Lattice resistance to shear slip is caused by the periodic fluctuation of the misfit energy across a slip plane. Lu et al. have shown that hydrogen reduces the misfit energy, slip resistance and resistance to dislocation motion. The 1s orbital of a hydrogen atom in a metal is not full, and the electron of the atom moves and reacts as a valence electron. The resistances to shear slip and dislocation generation at a crack tip are reduced by hydrogen electrons and hydrogen nuclei. Crack-tip plastic deformation is thus enhanced, and crack growth rate is increased. The model of reduced resistance to crack-tip dislocation generation and enhanced crack-tip plastic deformation can be extended to liquid metal-assisted cracking and stress corrosion cracking if the valence electron(s) of a liquid metal or chemical reduces the misfit energy and the slip resistance sufficiently.     

纯Ni中氢致开裂的透射电镜原位观察

纯Ni在透射电镜（TEM）中原位拉伸时,裂纹尖端首先发射大量位错,平衡时形成无位错区,微裂纹在裂纹顶端连续形核或在无位错区中不连续形核,并且形核后将钝化成孔洞或缺口。利用特殊的恒位移加载台,可在TEM中原位研究充氢前后恒位移试样裂尖位错组态的变化。结果表明,氢能促进位错的发射、增殖和运动。和未充氢纯Ni相比,充氢试样在更低的外应力下位错就会发射和运动,当氢促进的位错发射和运动到临界条件时就会使氢致裂纹形核、扩展,导致低应力脆断。     

High-cycle fatigue performance of solution-treated metastable-β titanium alloys

The effect of grain boundary misorientation on the high-cycle fatigue performance of solution-treated, metastable-β titanium alloys was investigated. Initial damage during cyclic deformation was associated with the formation of coarse, planar slip bands, these often propagating through several grains without obstruction or redirection when intersecting with a grain boundary. This “continuous” slip through several grains was associated with the presence of a significant number of “low-angle” grain boundaries. Fatigue crack initiation was associated with crack initiation at intersecting planar slip bands at the free surface. The increase in operative slip length occasioned by the presence of low-angle grain boundaries lead to enhanced crack initiation and reduced lifetime. Fatigue crack propagation was characterized by step-like features formed through the interaction of the propagating crack and the coarse slip bands present in the plastic zone ahead of the crack tip. The direction of local fatigue crack propagation was also minimally affected when crossing low-angle grain boundaries.     

Topological analysis of {1 1 0} slip in an α-iron crystal from in situ atomic force microscopy

In situ tensile tests were performed inside an atomic force microscope on commercially pure α-iron single crystals to examine the process of emerging slip at a free surface during plastic straining. The reported study corresponds to a crystal orientation which favors slip on a {1 1 0} plane. Statistical analysis of periodically stored images during the test allowed the collection of information on the planar and heterogeneous nature of slip, as well as on the evolution of this heterogeneity with strain. The average slip and the slip dispersion were step-wise estimated separately in each of the slip bands in a representative crystal observation zone. An estimate of the related heterogeneous evolution of the mobile dislocation density was also obtained. For the advanced microstructure-based modeling of intra-crystalline plastic behavior actually used in multiscale computational approaches of metal plasticity it is of interest to describe the relevant intra-crystalline slip process, which is not homogeneous even in single slip mode, although it is frequently simplified as such. These results also are of particular importance in validating the dislocation collective behaviour predicted by dislocation dynamics simulations.     

Micromechanisms of fracture in NiAl studied by in situ straining experiments in an HVEM

The room temperature brittleness of NiAl constitutes a major problem for technical applications. In order to investigate the micromechanisms of fracture in NiAl, we have carried out in situ tensile straining experiments on stoichiometric NiAl single crystals in a high-voltage electron microscope. According to our observations, crack propagation always involves dislocation activity around the crack tip, even in the hard orientation at room temperature. The Burgers vectors and the typical arrangements of the dislocations, as well as the extension of the corresponding plastic zone vary with the loading direction and the orientation of the microcrack versus potential glide systems. We observe that local concentrations of slip leads to irregular deviation of the cleavage plane from the {1 1 0} facets one usually observes at the macroscopic level. The results of our experiments help to understand why the mode I fracture toughness of NiAl is significantly larger for 〈1 0 0〉 loading directions than for non-〈1 0 0〉 directions.