集成电路企业如何降低知识产权风险——九天EDA设计软件正版化方案

近年来我国集成电路产业得到了迅猛的发展,据中国半导体行业协会的统计,我国大陆地区IC设计企业已近500家,2005年中国IC设计业的市场规模约150亿元人民币,在IC行业总产值比率已经超过20%。同时,2006年也是中国集成电路产业“十一五”发展的开局年,在“十一五”中,国家把自主创新作为产业发展的重点,把知识产权作为产业发展的关键,这就要求我们在创新设计的过程中,始终尊重知识产权和保护知识产权。北京中电华大电子设计有限责任公司(华大电子)十分重视集成电路设计中的知识产权保护,并积极地在推动中国集成电路产业发展的过程中,认真尊重…     

走向辉煌的中国集成电路设计业

中国半导体行业协会集成电路设计分会2002年会于10月15日在成都举行。信息产业部、科技部、中国半导体行业协会、国家863集成电路设计发展战略专家组、中国半导体行业协会集成电路设计分会的领导，以中国集成电路设计产业的发展为主题分别作了讲话。年会旨在加强行业交流、促进集成电路产业的跨越发展，提高国内集成电路设计水平和自主知识产权产品的开发能力，充分借鉴国外设计产业发展的成功经验和创新模式，带动国内集成电路设计水平的发展。本次成都会议不仅吸引了大陆及台湾地区300多家IC设计、制造、封装、测试企业，而且Cadence、S…     

中国自主知识产权将成未来产业发展之动力

为了加强中国集成电路领域相关企业,尤其是IC设计公司对知识产权保护的认识、强化知识产权管理、提高企业竞争力,由中国半导体行业协会(CSIA)知识产权工作部主办的“知识产权与竞争力”研讨会日前在国家集成电路设计深圳产业化基地举行,多个来自深圳地区的IC设计公司及一些初创企业的知识产权相关负责人员参加了此次研讨会。据了解,此次知识产权研讨会是中国半导体行业协会的系列活动之一,从今年下半年开始已在上海、北京、西安、成都等中国集成电路产业重镇分别举办了类似讲座,取得了良好的效果,将作为一项持续性活动在明年继续举办。…     

“十二五”期间我国集成电路产业规模将翻一番

近日，工业和信息化部副部长杨学山在全国集成电路行业工作会议上表示，预计到2015年，我国集成电路产业规模将翻一番，销售收入将达到3300亿元，满足27．5％国内市场需求。同时。集成电路产业结构进一步优化。并开发出一批具有自主知识产权的核心芯片，国内重点整机企业应用自主开发集成电路产品的比例将达到30％左右。     

论我国集成电路布图设计保护法的制定

集成电路产业是信息技术的基础产业,同时也是关系到国民经济发展的重要产业。加强集成电路布图设计的知识产权保护对于加快我国集成电路产业的创新与推动信息技术的发展有着重要的作用。我国应尽快在现有立法的基础上制定《集成电路保护法》,建立法定赔偿、海关禁令等相关制度,以完善我国的集成电路布图设计的保护制度。     

根植沃土培育英才——2013年第三届“华大九天杯”大学生集成电路设计大赛闭幕式暨颁奖大会报道

随着集成电路产业的不断发展,培养创新型集成电路设计人才,推动中国自主知识产权EDA设计工具的普及,以及满足集成电路产学研的实际需要,这是一项十分重要而迫切的工作。     

山东省十二英寸生产线相关技术研究

集成电路是信息产业的核心,是未来经济重要的增长点.掌握自主知识产权的集成电路设计、制造、封装、测试技术将牢牢地把握信息产业发展的主动权,从而极大地提高社会生产力.本文分析了目前国内的集成电路产业发展现状,并以知识产权专利为例分析了目前主要地区设计、封装、制造、测试的情况,同时分析了山东省与长三角地区、京津地区、珠三角地区的差距;然后阐述了目前国内十二英寸生产线的布局和基本情况,分析了山东省建设十二英寸生产线的优势和必要性,并给出了一些建议.     

要闻

上海集成电路首次实现全行业盈利在日前召开的上海市集成电路行业协会二届三次会员大会上,协会秘书长蒋守雷宣布,2006年上海市集成电路产业发生了质的变化,全行业首次实现盈利,且利润额超过20亿元,为实施“十一·五”规划创造了良好的开局。     

提升自主创新能力助企业定位知识产权--知识产权和竞争力讲座在深圳胜利召开

中国集成电路设计业刚刚跨越初创的十年。十年来,中国集成电路设计业从无到有,从小到大,从唯有的一家以设计自有集成电路产品为主的设计公司发展到由421家设计企业组成的产业群。温家宝总理在今年6月视察中关村时指出:“对高科技企业来说,自主知识产权是核心竞争力”,“自主开发核心芯片技术问题还没有得到很好的解决。要把这一关键技术列为‘十一五’规划的重要内容”。继18号文件后,国家又发布了132号文《集成电路产业研究与开发专项资金管理暂行办法》,继续对集成电路产业的发展予以大力支持。“国家的支持将包括设计、制造、封装、测试…     

我国集成电路产业持续快速增长

1995年至2003年，我国集成电路产量的年均增长率达到41．1％，集成电路销售额的年均增长率则达到34％，到2003年，国内集成电路总产量首次突破100亿块，达到124．1亿块，销售额达到351亿元，分别是1995年产量和销售额的16倍和10倍。中国集成电路产业规模已经由1955年不足世界集成电路市场总规模的干分之五提高到2003年的百分之三。2004年，中国集成电路产业继续加速发展，IC设计、芯片制造和封装测试三大行业规模都迅速扩大。估计全行业2004年销售收入总规模达到540亿元，同比增长率接近54％。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.