High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells

Broad area lasers based on InAs-GaAs quantum dots formed by submonolayer deposition were fabricated. High modal gain of submonolayer quantum dots permits the use of broad-waveguide and highly doped design. Continuous wave output power of 6 W limited by mirror damage and conversion efficiency of 58% were demonstrated at 20 °C. The characteristic temperature of 150 K was achieved.     

Modeling improvement of spectral response of solar cells by deployment of spectral converters containing semiconductor nanocrystals

A planar converter containing quantum dots as wavelength-shifting moieties on top of a solar cell was studied. The highly efficient quantum dots are to shift the wavelengths where the spectral response of the solar cell is low to wavelengths where the spectral response is high in order to improve the conversion efficiency of the solar cell. It was calculated that quantum dots with an emission at 603 nm increase the multicrystalline solar cell short-circuit current by nearly 10%. Simulation results for planar converters on hydrogenated amorphous silicon solar cells show no beneficial effects, due to the high spectral response at low wavelength.     

1040 nm vertical external cavity surface emitting laser based on inGaAs quantum dots grown in Stranski-Krastanow regime

Quantum dots grown by metal organic vapour phase epitaxy in the Stranski-Krastanow regime are succesfully implemented for the first time as active media in optically pumped vertical external cavity surface emitting lasers. To optimise the gain the quantum dots are engineered to match the excited state luminescence to the cavity resonance. Room temperature continuous-wave operation at 1040 nm wavelength is demonstrated. An output power of 280 mW is achieved, limited only by the onset of thermal rollover. The differential conversion efficiency is 6.7%.     

CdS and PbS quantum dots co-sensitized TiO2 nanorod arrays with improved performance for solar cells application

In this paper, we report a novel CdS and PbS quantum dots (QDs) co-sensitized TiO₂ nanorod arrays photoelectrode for quantum dots sensitized solar cells (QDSSCs). TiO₂ film consisting of free-standing single crystal nanorods with several microns high and 90–100 nm in diameter were deposited on a conducting glass (SnO₂:FTO) substrate by hydrothermal method. Then CdS/PbS QDs were deposited in turn on TiO₂ nanorods by facile SILAR technique. The FTO/TiO₂/CdS/PbS, used as photoelectrode in QDSSCs, produced a light to electric power conversion efficiency (Eff) of 2.0% under AM 1.5 illumination (100% sun), which shows the best power conversion efficiency compared with single CdS or PbS sensitized QDSSCs. One dimension TiO₂ nanorod provides continuous charge carrier transport pathways without dead ends. The stepwise structure of the band edges favored the electron injection and the hole-recovery for both CdS and PbS layers in photoelectrode, which may gave a high electric power conversion efficiency. The facile preparation and low cost nature of the proposed method and structure make it has a bright application prospects in photovoltaic areas in the future.     

非相干变频转换实现室温下红外单光子源

纳米金刚石中的NV-center(Nitrogen-Vacancy center)是目前室温下具有高发射率和稳定性的可见光波段单光子源,而如何实现及优化红外单光子源则是未来实现量子信息和量子通信应用的一大挑战.介绍了一种近期提出的实现红外单光子源的新型机制.该方法以金刚石中的NV-center作为可见光波段的单光子源,利用非相干变频转换实现室温下近红外波段稳定、无闪烁的单光子源.具体的实施方案为在中空芯光子晶体光纤中选择性地填充含有量子点的溶液,以可见光波段的单光子源作为激励源,选择合适的量子点即可得到红外波段的单光子源.中空芯光子晶体光纤保证了较高的单光子吸收效率以及荧光收集效率.该方案的实施在理论上可以达到26%的转换效率,而初步的实验得到了0.1%的转换效率.进一步分析了一些影响转换效率的因素,并提出了一些解决方案.     

High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm² and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm^-1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length.     

InAs量子点尺寸和间距对GaInP/GaAs/GaInAs/Ge多结叠层电池的影响

A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model.The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied.This shows that the maximum efficiency,as a function of quantum-dot size and distance,is about 60.15%under the maximum concentration for only one InAs/GaAs subcell,and is even up to 39.69%for the overall cell.In addition,other efficiency factors such as current mismatch,the formation of a quasicontinuum conduction band and concentrated light are examined.     

Colloidal quantum-dot bulk-heterojunction solar cells

Lead sulfide colloidal quantum dots(PbS CQDs),as a nov-el material for optoelectronic devices,have lately attracted a lot of attention mainly because of their tunable optoelectron-ic characteristics and low-temperature film preparation.PbS CQDs can harvest infrared(IR)light in single-junction,multi-junction,and tandem solar cells[1-3].Thanks to the combina-tion of surface chemical engineering and device structure en-gineering,the power conversion efficiency(PCE)for PbS CQDs solar cells has increased from less than 1％in 2005 to current 13.8％[4,5].     

60%电光效率高功率激光二极管阵列

设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件.微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1W /A和38.2 W.测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%.测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计.     

高效率量子点中间带太阳电池的构建与实现

中间带太阳电池是为了充分利用太阳光谱中的红外光子能量而提出的一种高效率新概念太阳电池。介绍了中间带太阳电池的能量上转换原理、量子点中间带的物理优势、量子点中间带太阳电池的结构组态和理论转换效率。评述了它的近期研究进展,并提出了发展这种新概念太阳电池的若干技术对策,其中包括补偿量子点的积累应变、优化量子点的生长参数和选择新的量子点结构。最后指出,由于应变的补偿,有序量子点层的形成以及新量子点结构的采用使太阳电池的光伏性能得以有效改善。可以预期,具有高转换效率的量子点中间带太阳电池的构建与实现将会对未来的光伏技术与产业带来革命性的影响。     

High-power singlemode CW operation of 1.5 /spl mu/m-range quantum dot GaAs-based laser

Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 /spl mu/m wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.     

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.     

Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.     

CdTe/CdS、CdTe/ZnS核壳结构半导体量子点制备及荧光特性

核壳半导体量子点材料因其在修复单量子点表面缺陷方面的特殊性能,极大地提高了量子点的光学性能而受到人们的研究。改进了CdTe核心的制作方法,使用小型三口瓶替代传统的小烧瓶作为反应容器,制备碲氢化钠,合成了不同核心尺寸、不同壳层厚度与不同壳层材料的10种CdTe/CdS、CdTe/ZnS核壳结构半导体量子点。对10种核壳结构半导体量子点材料进行紫外可见吸收光谱及荧光光谱测试,并分析其荧光特性。量子点在紫外可见波段的吸收光谱表明随着量子点尺寸的增大,吸收峰发生红移。通过实验结果与分析可推断出CdTe/CdS量子点荧光寿命和强度的不同是由于核心和壳层尺寸的不同量子点在I型和II型中相互转换;CdTe/ZnS的壳层厚度增加时,由于ZnS的壳层降低了核心外表的悬空键和表面缺陷态的数量,使电子空穴对复合机率加大,使得荧光峰位产生了红移。     

Quantum dot photoelectrochemical solar cells based on TiO2-SrTiO3 heterostructure nanotube array scaffolds

Titania-Strontium titanate (TiO2-SrTiO3)nanotube array with heterostructure has been demonstrated as an efficient scaffold applied to quantum dot photoelectrochemical solar cells. Quantum dot CdS serviced as solar light absorbent is chosen as an example to illustrate superior performance and deposited on scaffolds by successive ionic layer adsorption and reaction (SILAR) technique. The photoelectrochemical performance of such solar cell is strongly dependent on the structure of heterostructured scaffolds. Only well-dispersed SrTiO3 nanocrystallites on TiO2 could improve the overall conversion efficiency. Transient absorption spectra and photoelectrochemical measurements show that the formation of SrTiO3 energy gradient between TiO2 and electrolyte slows down the rate of electronic injection from 19.3 × 108 to 6.30 × 108 s 1, while it greatly increases electronic collection efficiency via reduced charge recombination. Cadmium sulfide (CdS) quantum dots used to decorate TiO2-SrTiO3 (1 h hydrothermal treatment) electrode exhibits superior photoelectrochemical performance with nearly 70% increase in external quantum efficiency at 460 nm and also in overall cell conversion efficiency. The photostability and high efficiency properties of TiO2SrTiO3 composites would enable its practical application in solar energy conversion devices.     

808nm大功率连续半导体激光器研究

利用金属有机化学气相淀积(MOCVD)技术,生长了AlGaInAs/AlGaAs分别限制压应变单量子阱材料,利用该材料制成3mm宽、填充因子20%的半导体激光器阵列(版型100μm/500μm,6个发光单元),通过腔面反射率设计确定了最佳反射率,采用CS载体标准封装。在输入电流8A、水冷19℃条件下测试,输出功率达到8.4W,阈值电流为1.8A,斜率效率为1.26W/A,功率转换效率为59.4%,波长为805.7nm,光谱半宽为1.8nm;输入电流12A时,输出功率达到13W,斜率效率为1.22W/A,功率转换效率为58.9%,波长为807.9nm,光谱半宽为2.0nm。     

A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate

Spatially single-mode lasing in the wavelength range of 1.25–1.28 μm was accomplished in injection lasers on GaAs substrates. The peak output power is 110 mW at room temperature, and the differential quantum efficiency amounts to 37%. The active region of the laser is formed by an array of self-organizing InAs quantum dots. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 1, 2000, pp. 117–120. Original Russian Text Copyright ? 2000 by Mikhrin, Zhukov, Kovsh, Maleev, Ustinov, Shernyakov, Kayander, Kondrat’eva, Livshits, Tarasov, Maksimov, Tsatsul’nikov, Ledentsov, Kop’ev, Bimberg, Alferov.     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.     

Quantum-Dot Sources for Single Photons and Entangled Photon Pairs

Quantum dots show excellent promise as triggered sources of both single and polarization entangled photons for quantum information applications. Our recent progress developing nonclassical light sources with single quantum dots is presented in this paper. Following radiative emission of an exciton confined in a quantum dot, there is a finite delay before re-excitation can occur; this results in an anti-bunching of the photons emitted providing a source of single photons. Excitation of a quantum dot with two electrons and two holes leads to the emission of a pair of photons; we show here that, provided the spin splitting of the intermediate exciton state in the decay is erased, the photon pair is emitted in an entangled polarization state. The fidelity of this entangled state is shown to exceed 70%. Using quantum dots to generate quantum light allows contacts for electrical injection to be integrated into a compact and robust device. A cavity may also be integrated into the semiconductor structure to enhance the photon collection efficiency and control the recombination dynamics. We detail a process to form a submicrometer current aperture within an electrical device, allowing individual quantum dots to be addressed electrically in devices.     

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency（PCE）.The internal quantum efficiency,the series resistance,and the thermal resistance were theoretically optimized.The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers.The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs0.9P0.1/InGaAs quantum well.Experimentally,a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink,and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.