四烯丙基氯化铵交联的耐高温吸水树脂的研究

采用水溶液聚合法,以丙烯酸(AA)、2-丙烯酰胺基-2-甲基丙磺酸(AMPS)为单体,四烯丙基氯化铵(TAAC)为交联剂,过硫酸铵(APS)为引发剂,制备了耐高温吸水树脂,考察了单体配比、引发剂和交联剂用量对吸水树脂在高温下吸水性能的影响,并对吸水树脂结构进行扫描电镜分析。研究结果表明,所合成的吸水树脂具有良好的耐高温性能,最佳合成条件:AMPS与AA的质量比为0.22,引发剂、交联剂与单体的物质的量比分别为0.11%、0.14%,此条件下合成的吸水树脂在300℃蒸馏水中的吸水倍率为248g/g。     

无N2下合成钠基膨润土/P(AA-AM)复合吸水树脂的研制

以N,N'-亚甲基双丙烯酰胺为交联剂,过硫酸钾为引发剂,丙烯酸(AA)和丙烯酰胺(AM)为单体,采用水溶液聚合法合成出钠基膨润土复合聚丙烯酸钠-丙烯酰胺复合吸水树脂.研究了钠基膨润土的添加量、交联剂用量、引发剂用量、中和度及AM的用量对吸水倍率的影响.结果表明,钠基膨润土用量为40%,交联剂用量为0.025%,引发剂用量为0.3%,AM用量为12%及AA的中和度为80%时,吸蒸馏水倍率与吸收0.7%NaCl溶液倍率分别为422.28 g/g和65.80 g/g.     

有机/无机复合高吸水树脂耐盐性和防潮性能研究

以过硫酸钾为引发剂,N,N'-亚甲基双丙烯酰胺为交联剂,丙烯酸、2-丙烯酰胺-2-甲基丙磺酸(AMPS)为单体,聚乙烯醇为有机合成聚合物,硅藻土为无机黏土,采用水溶液聚合法合成有机/无机复合高吸水树脂。采用傅里叶变换红外光谱仪、扫描电子显微镜和热重分析仪对有机/无机复合高吸水树脂进行了表征,考察了引发剂用量、交联剂用量、AMPS用量及硅藻土用量对复合吸水树脂吸液性能的影响。在最佳反应条件下,有机/无机复合高吸水树脂吸蒸馏水倍率、吸0.9%生理盐水倍率分别为1574g/g和101g/g;纯有机高吸水树脂暴露在空气中的吸湿性是复合高吸水树脂的20～30倍,说明有机/无机复合高吸水树脂具有优异的防潮性能,在不同阳离子盐溶液中(Na~+、Ca~(2+)和Fe~(3+))其吸液性能明显优于纯有机高吸水树脂。     

膨润土复合甲基丙烯酸高强度吸水剂的制备及性能表征

以膨润土和甲基丙烯酸为原料,N′N-亚甲基双丙烯酰胺为交联剂,过硫酸铵为引发剂,采用溶液聚合法制备了膨润土复合甲基丙烯酸聚合物高强度吸水剂,通过红外光谱对其结构进行了表征。研究了吸水剂中膨润土加入量、单体中和度、交联剂用量等对吸水性和强度的影响,并测试了吸水剂的吸水性能和压缩强度。结果表明,当膨润土用量为10%,氢氧化钠浓度为2mol/L,单体中和度为80%,交联剂用量为0.75%时,制备的吸水剂在室温下对蒸馏水吸水倍率达382g/g,对自来水吸水倍率可达216g/g;地0.9%的Na2SO4溶液中吸水倍率为76g/g,压缩强度为16.73MPa,说明制备的吸水剂具有较好的强度和吸水性能。     

P(AA-AMPS)吸水树脂的制备及高温环境中耐盐性能测定

以四烯丙基氯化铵(TAAC)为交联剂,过硫酸钾(KPS)为引发剂,引入耐盐性单体2-丙烯酰胺基-2-甲基丙磺酸(AMPS),通过水溶液共聚制备了一种适用于高温环境的丙烯酸-2-丙烯酰胺基-2-甲基丙磺酸共聚物[P(AAAMPS)]耐盐性吸水树脂。考察了交联剂和引发剂用量、单体配比对吸水树脂在150℃下1%(wt,质量分数,下同)NaCl盐水中吸液性能的影响。结果表明:耐盐性吸水树脂的最佳聚合条件为:TAAC、KPS和AMPS占丙烯酸的质量分数分别为0.17%、0.12%和20%。在上述条件下制备的吸水树脂150℃下在1%NaCl盐水中吸水倍率可达78g/g,且表现出优异的耐高温性能和耐酸碱性能,拓宽了吸水树脂在高温含盐领域的应用范围。     

淀粉/膨润土复合高吸水树脂的制备工艺研究

以淀粉、膨润土、丙烯酸、丙烯酰胺等为原料,采用微波辐射法制备复合高吸水树脂。研究了膨润土用量、丙烯酰胺用量、引发剂用量、交联剂用量等对高吸水树脂吸液率性能的影响。实验结果表明,不同比例下的原材料制得的树脂吸水倍率差异很大。在交联剂为0.045%,引发剂0.32%,中和度70%,膨润土10%,磷酸酯淀粉3%,丙烯酸与丙烯酰胺质量比为2∶1,微波功率为800W辐射15min时吸蒸馏水倍率为796g/g,当丙烯酸与丙烯酰胺质量比为1∶1时,吸0.9%NaCl溶液倍率达95g/g。     

耐盐性高吸水树酯的制备及性能

以丙烯酸和2-丙烯酰胺基-2-甲基丙磺(AMPS)为单体,采用溶液聚合法合成了聚(丙烯酸盐-co-2-丙烯酰胺基-2-甲基丙磺酸盐)高吸水性树脂。考察了交联剂、引发剂用量,AMPS与丙烯酸摩尔比,AMPS水溶液浓度,丙烯酸和AMPS中和度,反应温度等因素对吸水树脂吸水性能的影响。制得的吸水性树脂30min吸蒸馏水和0．9％NaCl水溶液分别为1350g／g和150g／g,且凝胶强度较好。     

耐盐型壳聚糖高吸水树脂的制备及其性能

以天然无毒、可降解性、抑菌性能良好的壳聚糖(CS)为基体,利用自由基接枝聚合法接枝丙烯酸(AA)和2-甲基丙烯酰胺基-2-甲基丙磺酸单体(AMPS),制备了吸水性和耐盐性能良好的CS高吸水树脂。研究了各因素(温度、投料比、引发剂用量和交联剂用量等)对吸水性及耐盐性的影响,并用红外光谱及扫描电镜对高吸水树脂的结构和形貌进行表征。结果表明:在温度60℃、物料比m(CS)∶m(AA)∶m(AMPS)=1∶8∶3、交联剂用量及引发剂用量均为单体质量1%的条件下,合成的高吸水树脂最大吸水率达578.7g/g,吸盐率达114.2g/g;1h基本达到吸水平衡,且重复使用5次后,吸水率变化不大,重复使用性能良好。     

新型两步水溶液聚合法制备PAA/PAMPS复合材料及其吸液性能研究

以N,N'-亚甲基双丙烯酰胺(NMBA)为交联剂、过硫酸铵-焦亚硫酸钠氧化-还原体系为引发剂,采用新型水溶液聚合法制备了PAA/PAMPS水凝胶.考察了单体浓度、丙烯酸中和度时凝胶吸液性能的影响,并与传统共混水溶液聚合法制备的凝胶的吸液性能进行了对比.实验结果表明,AMPS用量为40%、中和度为75%的水凝胶的吸液性能较好,吸水倍率达976g/g,吸盐水倍率为75g/g,而采用传统方法制备的凝胶的吸水倍率为380g/g,吸盐水倍率为52g/g.采用FTIR及SEM对样品的结构及形貌进行了表征.     

琼脂改性膨润土/聚丙烯酸钠-丙烯酰胺高吸水复合材料的合成及性能

采用水溶液聚合法制备了琼脂改性的膨润土/聚丙烯酸钠-丙烯酰胺高吸水性复合材料。考察了琼脂、交联剂、引发剂、中和度、膨润土及两单体质量比等因素对复合材料吸液倍率的影响。结果表明,天然高分子琼脂的适量加入提高了材料的吸液倍率。当反应温度为85℃,膨润土含量为30%,琼脂含量为1.0%,交联剂用量为0.01%,中和度为65%,引发剂用量为0.3%,丙烯酸与丙烯酰胺单体质量比分别为3/1和2/1时制备的复合材料的吸水倍率及吸0.9%N aC l溶液分别达到1400 g/g与95 g/g。     

Optical and electrical H/sub 2/- and NO/sub 2/-sensing properties of Au/In/sub x/O/sub y/N/sub z/ films

In this paper, we describe the optical and electrical gas-sensing properties of In/sub x/O/sub y/N/sub z/ films with an ultrathin gold promoter overlayer. We have fabricated In/sub x/O/sub y/N/sub z/ films with a nanocrystalline porous structure by RF-sputtering in Ar/N/sub 2/ followed by an annealing process. Gold particles with 20-30-nm diameter have been formed on top of the In/sub x/O/sub y/N/sub z/ films by dc sputtering and an annealing process. We have investigated the optical H/sub 2/and NO/sub 2/-sensing properties (change of absorbance) and also the electrical sensing effect (change of electrical resistance) for these two gases. A combined optical/electrical sensor for H/sub 2//NO/sub 2/ is proposed.     

Preparation and characterization of LiNiVO4 powder and non-stoichiometric LiNixVyOz films

Inverse spinel type structured oxide, LiNiVO₄, was synthesized by using solid-state method and the crystalline powder was characterized by Rietveld refinement and X-ray photoelectron spectroscopy. Non-stoichiometric lithium nickel vanadate thin films were prepared by physical vapour deposition technique. The amorphous films were characterized by Rutherford back-scattering spectroscopy (RBS), nuclear reaction analysis (NRA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) analytical methods. Films crystal growth at various temperatures was also studied by XRD and SEM. The HRTEM analysis of sputtered film shows nanocrystalline domains of NiO and LiNiVO₄ phases with characteristic lattice parameters of the host compound and the results correlate well with the XRD data. Electrochemical properties of the films were discussed.     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Fabrication and characterization of NiO/ZnO/ITO p-i-n heterostructure

Transparent oxide semiconductors (TOSs) are promising materials for a variety of optoelectronic applications such as UV detectors. While several TOS-based p-n and p-i-n diodes have been recently reported, the high reverse dark current still poses a major issue. In this work, we report on a NiO/ZnO/ITO p-i-n heterostructure with reduced dark current level suitable for practical applications. Ion beam-assisted e-beam evaporation was used to deposit both p-type NiO and intrinsic ZnO layers, while a conventional sputtering system was used to prepare the ITO layer. Samples with sputtered ZnO layer were also fabricated for comparison. The diodes demonstrated clear rectifying I-V characteristics with a current rectification ratio up to 10⁴ at bias voltages of ± 1 V. The lowest level of reverse dark current (∼ 10 nA/cm² at − 5 V) is observed in samples with ZnO deposited by ion beam-assisted e-beam evaporation. In comparison, diodes with sputtered ZnO layer show two orders of magnitude higher dark current. Analysis of the quasi-static J-V characteristics, including time dependence behavior, shows that the dark current can be attributed to thermal generation of charge carriers via deep defects states in the ZnO layer and charge injection from the contacts. Electrical and optical properties of the TOS films are presented and discussed along with deposition conditions and device performance.     

Properties of composite BxCyNz nanotubes and related heterojunctions

We review the stability and electronic properties of composite B_xC_yN_z nanotubes, including BN-, BC₂N- and B-doped carbon nanotubes. We show in particular that BC₂N systems are driven towards the segregation of pure C and BN sections. The same process of segregation into BC₃ islands is evidenced in the case of B-doped carbon nanotubes. These spontaneous segregation processes lead to the formation of quantum dots or nanotube heterojunctions with potential important technological applications.     

Analysis of phenothiazine and its derivatives using LC/electrochemistry/MS and LC/electrochemistry/fluorescence

The on-line electrochemical conversion of phenothiazine and its derivatives after liquid chromatographic separation has been studied by mass spectrometry and fluorescence spectroscopy. In an electrochemical cell consisting of porous glassy carbon, the phenothiazines are readily converted to oxidized products, which can be detected by on-line fluorescence spectroscopy and mass spectrometry. The method allows rapid investigations on the electrochemical oxidation pathways, as demonstrated for phenothiazine itself. The phenothiazine derivatives are transferred into their strongly fluorescent sulfoxides. Based on this reaction, an LC/electrochemistry/fluorescence method was developed that allows for limits of detection between 5 x 10(-9) and 4 x 10(-8) mol/L and limits of quantification between 2 x 10(-8) and 1 x 10(-7) mol/L for the individual phenothiazines. The linear ranges comprised three decades starting at the limit of quantification.     

非晶Tb/Fe/Dy和Fe/Tb/Fe/Dy纳米多层膜磁性能及超磁致伸缩性能(英文)

研究非晶Tb/Fe/Dy(样品A)和Fe/Tb/Fe/Dy(样品B)纳米多层膜超磁致伸缩性能和磁性能.磁滞回线表明样品A的垂直磁各向异性而样品B有面向磁各向异性,样品B比样品A更好的磁性能.样品B有很好的低场超磁致伸缩性能,在外磁场为0.12T情况下样品B的超磁致伸缩性能是样品A的五倍,即从16ppm变为82ppm.     

Chemical bonds and microstructure in nearly stoichiometric PECVD aSixNyHz

Silicon nitride thin films were prepared by low frequency plasma enhanced chemical vapour deposition in silane, nitrogen and helium mixtures. With different silane flow rates, various thin films with nearly stoichiometric composition but different chemical bonds were prepared with hydrogen content lower than 12%. The films were annealed up to 1100 °C and the hydrogen content was measured by elastic recoil detection analysis and compared to the infrared vibration of hydrogenated modes of silicon and nitrogen atoms. Two kinds of behaviour were observed in the chemical bonding with the annealing temperature: either NH and SiH bonds show a decrease, as is generally reported in the literature, or a strong increase of the SiH one is observed. There is also a dramatic discrepancy between the hydrogen content measured by nuclear technique and by infrared spectroscopy if constant oscillator strengths of the stretching modes of hydrogenated sites are used. As in amorphous silicon, these results confirm the difficulty of deducing the concentration of hydrogen bonded to the silicon atoms in silicon nitride. We suggest that these effects are closely correlated to the local microstructure of the films and specific arrangements around SiH dipoles.     

Near UV emission and p-type conductivity in Zn1−xLixO and Zn1−xNaxO nanomaterial system

The nanomaterial system Zn_1−xLi_xO and Zn_1−xNa_x  O (0?x?0.15$0?x?0.15$) were synthesized by controlled solid state reaction. XRD analysis showed well formed wurtzite structure of average particle size about 50 nm and change in lattice parameters due to incorporation of group I element in ZnO lattice. SEM exhibited formation of nanorods. Hall effect measurement of Zn_1−xLi_xO and Zn_1−xNa_xO system showed p-type conductivity which varied with concentration of Li and Na. Photoluminescence showed strong emission peak in near UV at 3.11 eV (398 nm) and negligible visible emission. The PL peak positions in Zn_1−xLi_xO and Zn_1−xNa_xO nearly coincide which suggest very similar recombination mechanism in Li and Na doped ZnO nanocrystals. The results hold potential for fabrication of ZnO based near UV LEDs.     

Effect of Bi/Pb ratio and annealing temperature onTc and formation of high-Tc phase in Bi-Pb-Sr-Ca-Cu-O superconductor

We studied the effect of Bi/Pb ratio and annealing temperature onT _c and formation of the high-T _c ; phase in Bi-Pb-Sr-Ca-Cu-O superconductor by the three-step reaction process. The optimum Bi/Pb ratio is about 1.80.3 and the optimum annealing temperature is about 845–855°C. It is found that a variate high-T _c phase existed at the higher annealing temperature. The zero-resistance temperature of the variate high-T _c phase decreased when the annealing temperature increased, although the phase is isostructural with the 110 K phase.