生长温度对InAs/GaAs横向异质结构纳米线形貌及晶体结构的影响

低维半导体材料因其超常的物理性能而受到了广泛关注和研究。本文采用金属有机物化学气相沉积（MOCVD）技术,利用金作催化剂制备了InAs/GaAs横向异质结构纳米线,并讨论了不同生长温度情况下InAs横向异质材料对纳米线形貌及晶体结构的影响。提高InAs材料的生长温度,可以有效地抑制纳米线的纵向生长,使其实现横向异质结构的生长。在异质结构纳米线横向生长时发生了侧面晶面旋转的现象,这是纳米线表面重构后侧面趋向能量更低的晶面的结果。本文的研究工作为推动微纳技术的发展提供了相应的理论基础和科学依据。      

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450?K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.     

Self-organized growth of Si/Silica/Er2Si2O7 core-shell nanowire heterostructures and their luminescence

Self-organized Si-Er heterostructure nanowires showed promising 1.54 microm Er(3+) optical activity. Si nanowires of about 120-nm diameter were grown vertically on Si substrates by the vapor-liquid-solid mechanism in an Si-Er-Cl-H(2) system using an Au catalyst. Meanwhile, a single-crystalline Er(2)Si(2)O(7) shell sandwiched between nanometer-thin amorphous silica shells was self-organized on the surface of Si nanowires. The nanometer-thin heterostructure shells make it possible to observe a carrier-mediated 1.53 microm Er(3+) photoluminescence spectrum consisting of a series of very sharp peaks. The Er(3+) spectrum and intensity showed absolutely no change as the temperature was increased from 25 to 300 K. The luminescence lifetime at room temperature was found to be 70 micros. The self-organized Si nanowires show great potential as the material basis for developing an Si-based Er light source.     

CuO纳米线在碳纤维上的制备与表征

通过热氧化镀铜碳纤维,在碳纤维上制备了CuO纳米线。利用热重分析研究了镀铜碳纤维的热氧化过程。通过扫描电子显微镜、X射线衍射以及透射电子显微镜研究了退火温度、时间以及碳纤维对CuO纳米线生长的影响。结果表明,所制备的CuO纳米线为单斜型单晶结构,在碳纤维上制备CuO纳米线的最佳条件为400℃退火2h。并讨论了CuO纳米线在碳纤维上的生长机理。     

使用Cu助剂在常压及Cu-Ti共晶温度下快速制备TiO2纳米线

本文提供了一种简单的热退火方法以制备线状TiO2纳米结构。热退火方法一直难以用于高熔点金属氧化物纳米结构的制备,而本文通过引入CuCl2作为催化剂,通过简单的反应过程,在较短的时间内和远低于钛熔点的反应温度下制得了金红石相的TiO2一维纳米结构。研究结果表明,关键的实验参数包括活性催化物添加量、生长温度和退火时间。在850℃(接近于Cu-Ti共晶温度)退火60分钟的反应条件下,制备的二氧化钛纳米线长度在10微米以上,直径约为100纳米。此外,本文还探讨了TiO2纳米线生长机理。     

Controlled synthesis of NiS nanoparticle/CdS nanowire heterostructures via solution route and their optical properties

In the present study, we have successfully synthesized the novel heterostructure of NiS nanoparticle (NP)/CdS nanowire (NW) through solution approach. The first step, CdS nanowires were synthesized by a convenient solvothermal route. Then, NiS nanoparticles were grown on the surface of CdS nanowires in a chemical solution of NiCl₂·6H₂O and anhydrous ethanol at 200 °C. The new catalyst-assisted growth mechanism of the NiS NP/CdS NW heterostructure has been tentatively discussed on the basis of experimental results. A detailed study of the effect of experimental parameters, such as reaction time, reaction temperature, and reaction solvent are also studied. The as-prepared products are characterized by field-emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), and their optical properties are measured by Raman spectra and PL spectra. Furthermore, using CdS nanowires and NiS NP/CdS NW heterostructure as examples, our study suggests that this general method can be employed for construction of other semiconductor heterostructures with novel properties.     

Effect of Oxide Assisted Metal Nanoparticles on Microstructure and Morphology of Gallium oxide Nanowires

Several researches have been reported about the characteristic of β-Ga2O3 nanowires which was synthesized on nickel oxide particle. But indeed, recent researches about synthesis of β-Ga2O3 nanowires on oxide-assisted transition metal are limited to nickel or cobalt oxide catalyst. In this work, Gallium oxide (β-Ga2O3 ) nanowires were synthesized by a simple thermal evaporation method from gallium powder in the range of 700 - 1000℃ using the iron, nickel, copper, cobalt and zinc oxide as a catalyst, respectively. The β-Ga2O3 nanowires with single crystalline without defects were successfully synthesized at the reaction temperature of 850, 900 and 950℃ in all the catalysts. But optimum experimental condition in synthesis of nanowires varied with the kind of catalyst. As increasing synthesis temperature,the morphology of gallium oxide nanowires changed from nanowires to nanorods, and its diameter increased. From these results, we could be proposed that the growth mechanism of β-Ga2O3 nanowires was changed with synthesis temperature of nanowires. Microstructure and morphology of Synthesized nanowire was characterized by HR-TEM, FE-SEM, EDX and XRD.     

Au／SiO2复合纳米颗粒膜及SiO2纳米线的制备

室温下用磁控溅射法在Si（111）衬底上生成Au／SiO2复合纳米颗粒膜,并分不同温度进行退火处理。1000℃退火时自组装生成空间分布均匀（直径约为70nm）的Au纳米点,从而用自组装生长方法制备了生长一维纳米材料的模板,然后,将Au催化剂模板在1100℃下退火处理,生成纳米线,SEM和TEM测试,制备的SiO2纳米线直径约为100nm,长度约为4μm,表面光滑,直且粗细均匀。     

Thermal Growth and Nanomagnetism of the Quasi-one Dimensional Iron Oxide

Quasi-one dimensional iron oxide nanowires with flat needle shape were synthesized on the iron powders by a rather simple catalyst-free thermal oxidation process in ambient atmosphere. The characterization by field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman and high-resolution transmission electron microscopy (HRTEM) revealed that these nanostructures are single crystalline α-Fe2O3. The various dimensions with 40-170 nm in width and 1-8 μm in length were obtained by tuning the growth temperature from 280 to 480℃. A surface diffusion mechanism was proposed to account for the growth of quasi-one dimensional nanostructure. The typical α-Fe2O3 nanowires synthesized at 430℃ had a reduced Morin temperature TM of 131 K in comparison with their bulk counterpart. The coercivitis Hc of these nanowires are 321 and 65 Oe at 5 and 300 K, respectively. The temperature of synthesis also has important effects on the magnetic properties of these nanowires.     

GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence （CL） in a scanning electron microscope （SEM）. We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy （TEM）. In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.     

硅衬底上有序氮化铝纳米线阵列的生长

在450℃反应温度下,利用无水三氯化铝与叠氮化钠在25mL的不锈钢反应釜中直接反应,成功地在硅片衬底上制备了六方单晶氮化铝（h—AlN）纳米线有序阵列。这些纳米线呈长直线状,粗细均匀,直径约为100nm,长度均在几个微米以上。所有纳米线生长方向一致,而且与硅片衬底垂直。经过分析,纳米线由气液固机制生长而成.     

水热合成法制备La0.7Sr0.3FeO3纳米线的合成机理研究

在表面活性剂CTAB水溶液中添加硝酸盐溶液,并滴加氨水,采用水热合成法在180℃的温度下反应9h,制备了La0.7Sr0.3FeO3前驱体,在700℃下煅烧6h后得到La0.7Sr0.3FeO3纳米颗粒组装的纳米线。利用SEM、TEM和XRD对其形貌、尺寸和结构等进行了表征。制备的La0.7Sr0.3FeO3纳米线是由约为20nm的纳米颗粒组装而成的,纳米线的最大长径比达100以上。通过改变水热合成时间和前驱体的煅烧温度等实验条件,对La0.7Sr0.3FeO3纳米线的物相转化和生长机理进行了分析。表面活性剂CTAB作为生长控制剂和颗粒凝聚载体,能够控制材料沿着轴向生长,形成纳米线。     

Investigation of indium oxide as a self-catalyst in ZnO/ZnInO heterostructure nanowires growth

We investigated the self-catalytic role of indium oxide in the growth process of ZnO/ZnInO heterostructure nanowires on Si(111). The prepared nanowires had hexagonal cross sections and were tapered with tip diameters of 90 ± 5 nm and base diameters of 230 ± 5 nm. Energy dispersive X-ray and field emission Auger spectroscopies indicated that the grown nanowires were heterostructures of ZnO and ZnInO. Analysis of the early growth process revealed that indium may play a self-catalytic role. Therefore, the vapor-liquid-solid mechanism is likely to be responsible for growth of ZnO/ZnInO nanowires. X-ray diffraction and room temperature photoluminescence (PL) data demonstrated that the presence of indium results in a decrease in nanowires' crystallinity. These wires produced a large PL emission peak in the ultraviolet (UV) region and a smaller peak in the green region of the electromagnetic spectrum. The UV peak of the ZnO/ZnInO nanowires is blue-shifted with respect to that of pure ZnO nanowires.     

Synthesis of Single-Crystal TiO2 Nanowire Using Titanium Monoxide Powder by Thermal Evaporation

TiO 2 nanowires were synthesized successfully in a large quantity by thermal evaporation using titanium monoxide powder as precursor. X-ray diffraction results showed that all the products were pure rutile phase of TiO 2 . According to microstructural observations, the nanowires have two typical morphologies, a long straight type and a short tortuous type. The straight nanowires were obtained at a wide temperature range of 900-1050 ℃, while the tortuous ones were formed below 900 ℃. Transmission electron microscopy characterization revealed that both the straight and the tortuous nanowires are single-crystal rutile TiO 2 . The preferential growth direction of the nanowires was determined as [110] orientation according to electron diffraction and high-resolution image analyses. The morphological change of TiO 2 nanowires was discussed by considering the different atomic diffusion rates of Ti atoms caused by the phase transformation in Ti substrate at around 900 ℃.     

Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors

We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/AlN/AlGaN radial nanowire heterostructures are dislocation-free single crystals. In addition, the thicknesses and compositions of the individual AlN and AlGaN shells were unambiguously identified using cross-sectional high-angle annular darkfield scanning transmission electron microscopy (HAADF-STEM). Transport measurements carried out on GaN/AlN/AlGaN and GaN nanowires prepared using similar conditions demonstrate the existence of electron gas in the undoped GaN/AlN/AlGaN nanowire heterostructures and also yield an intrinsic electron mobility of 3100 cm(2)/Vs and 21,000 cm(2)/Vs at room temperature and 5 K, respectively, for the heterostructure. Field-effect transistors fabricated with ZrO(2) dielectrics and metal top gates showed excellent gate coupling with near ideal subthreshold slopes of 68 mV/dec, an on/off current ratio of 10(7), and scaled on-current and transconductance values of 500 mA/mm and 420 mS/mm. The ability to control synthetically the electronic properties of nanowires using band structure design in III-nitride radial nanowire heterostructures opens up new opportunities for nanoelectronics and provides a new platform to study the physics of low-dimensional electron gases.     

Growth of InAs/InP core-shell nanowires with various pure crystal structures

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal-organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (～500?°C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420-460?°C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures.     

The morphology of axial and branched nanowire heterostructures

We present an extensive investigation of the epitaxial growth of Au-assisted axial heterostructure nanowires composed of group IV and III-V materials and derive a model to explain the overall morphology of such wires. By analogy with 2D epitaxial growth, this model relates the wire morphology (i.e., whether it is kinked or straight) to the relationship of the interface energies between the two materials and the particle. This model suggests that, for any pair of materials, it should be easier to form a straight wire with one interface direction than the other, and we demonstrate this for the material combinations presented here. However, such factors as kinetics and the use of surfactants may permit the growth of straight double heterostructure nanowires. Finally, we demonstrate that branched nanowire heterostructures, also known as nanotrees, can be successfully explained by the same model.     

GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy

We directly image the interior of GaAs/AlGaAs axial and radial nanowire heterostructures with atomic-scale resolution using scanning tunneling microscopy. We show that formation of monolayer sharp and smooth axial interfaces are possible even by vapor-phase epitaxy. However, we also find that instability of the ternary alloys formed in the Au seed fundamentally limits axial heterostructure control, inducing large segment asymmetries. We study radial core-shell nanowires, imaging even ultrathin submonolayer shells. We demonstrate how large twinning-induced morphological defects at the wire surfaces can be removed, ensuring the formation of wires with atomically flat sides.     

Nitrogen-doped tungsten oxide nanowires: low-temperature synthesis on Si, and electrical, optical, and field-emission properties

Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated.     

反应源温度对ZnO纳米线阵列定向性及发光性能的影响

以Au薄膜为催化剂、ZnO与碳混合粉末为反应源,采用碳热还原法在单晶Si衬底上制备了ZnO纳米线阵列.通过扫描电子显微镜( SEM)、X射线衍射仪(XRD)、荧光分光光度计对样品的表征,研究了反应源温度对ZnO纳米线阵列的定向性和光致发光性能的影响.样品在源温度920℃条件下沿(002)方向择优生长,定向性最好,温度过低不利于ZnO纳米线阵列密集生长,而温度过高导致Zn原子二次蒸发,因而也不利于纳米线阵列的定向和择优生长;样品在源温度880℃有最强的近紫外带边发射,表明温度过高和过低都不利于ZnO晶体结构的优化;由于ZnO纳米线在缺氧氛围下生长,氧空位是缺陷存在的主要形式,因此所有样品都有较强的绿光发射.温度升高导致纳米线生长速度提高而增加了氧空位缺陷数量,从而使样品绿峰强度增强并在源温度920℃时达最大值,但温度的进一步升高可导致ZnO纳米线表面Zn元素的蒸发而降低氧空位缺陷的数量,从而抑制绿峰强度.