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A single-ended resonant-type high-frequency inverter using a static induction transistor (SIT) described in this paper can be performed as a zero current switching (ZCS) operation without dc reactor. The SIT high-frequency inverter is a low-cost one which has no transformer and it would be developed for a high-intensity ultrasonic power supply and dc-dc converter. The circuit operation regions, not only ZCS but also ZCS-ZVS (zero current switching and zero voltage switching), were elucidated in the normalized plane. The characteristics of the inverter including the power control by frequency regulation were discussed. Furthermore, the switching characteristics in the transient-state were investigated. These characteristics were substantiated on the basis of the numerical analysis and experimental results. 相似文献
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G. Bober Prof. Dr.-Ing. K. Heumann G. Papp 《Electrical Engineering (Archiv fur Elektrotechnik)》1990,74(1):3-14
Contents New power devices — IGBT's and a bipolar transistor with cellular structure are investigated for applications in fast switching PWM inverters. Device ratings are in the 1000 V/100 A range, inverter power reaches up to some ten kilovoltamperes, respectively. Subjects of the comparison are the gate drive requirements, conduction and switching losses, switching speed and overload capability. An automated test equipment for the integral measurement of power losses in function of the switching frequency is described. As a result IGBT's need simple gate drive circuits, but operating frequency at rated current is lower, than that of a bipolar junction transistor with cellular structure. However the base drive circuit of a cellular transistor is more complex.
Qualifikation von IGBT's und SIRET für Wechselrichter mit hoher Schaltfrequenz
Übersicht Neue Leistungshalbleiter-Bauelemente, IGBT's und ein bipolarer Transistor mit Feinstruktur, werden für den Einsatz in schnell schaltenden PWM Wechselrichtern untersucht. Die Bauelement-Daten liegen im Bereich 1000 V/100 A. Entsprechend erreichen die Wechselrichter Leistungen von einigen zehn Kilovoltampere. Gegenstand des Vergleiches sind Ansteueraufwand, Durchlaß- und Schaltverluste, Schaltgeschwindigkeit und Überlastbarkeit. Beschrieben wird eine automatisierte Testeinrichtung für die integrale Messung von Schaltverlusten in Abhängigkeit von der Schaltfrequenz. Ein Ergebnis ist, daß IGBT's einfache Ansteuerschaltungen benötigen. Dagegen liegt ihre Betriebsfrequenz bei Nennstrom niedriger als bei einem bipolaren Junctiontrasistor mit Feinstruktur. Allerdings ist bei dem Feinstrukturtransistor die Ansteuerung aufwendiger.相似文献
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In spite of the existence of a number of analytical models aimed for transient analysis of large grounding systems, more detailed analysis of the influence of different parameters on the transient performance of large ground grids subjected to lightning current impulse is not available. This paper presents analysis of the influence of soil conductivity, location of feed point, grid size, depth, conductor separation, ground rods, and shape of the lightning current impulse, on the transient performance of ground grids with sizes ranging from 10×10 m2 to 120×120 m2 and with 4 to 124 meshes. Maximal transient ground potential rise and frequency dependent impedance are analyzed in time and frequency domain, respectively. Computations are made with computer model based on the electromagnetic field theory approach, taking accurately into account frequency dependent characteristics of large ground grids. Instead of usual simple approximations of the lightning current impulse, recorded channel base currents from triggered lightning are used for the time domain analysis 相似文献
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从差动结构的角度提出了差动Buck-Boost直流变换器型高频环节逆变器电路拓扑,该逆变器是由2个相同的、输出反相低频正弦脉动直流电压的高频电气隔离双向Buck-Boost直流变换器以差动电路构成.针对该逆变器的特点采用电压瞬时值反馈互补双向控制策略.给出了逆变器稳态工作时的4种工作模式,根据4种工作模式分析逆变器在一个低频输出电压周期内阻性、感性和容性负载下的稳态工作原理.利用开关状态等效电路进行分析计算得到了不同占空比下的逆变器标幺外特性,给出了关键电路参数的设计.实验结果证实了此逆变器及其控制策略的正确性与可行性. 相似文献
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独立光伏系统具有高频环节逆变器研究与设计 总被引:2,自引:0,他引:2
以研制独立光伏系统逆变器为背景对具有高频DC/DC中间环节逆变器进行了研究和设计,采用了FB-PS-PWMZVS技术,引入了新一代软开关控制器UCC3895,提出了互补型脉宽调制(CPWM)的单极性正弦逆变概念,并将SG3525引入SPWld逆变控制中.实验和仿真验证了设计思想和设计方案. 相似文献
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研究了适合于低压输入且实现电气隔离的并联反激式高频环节单相逆变器,并对构成这种逆变器的电路拓扑、SPWM控制策略以及关键电路参数的设计进行了深入的分析研究。这种高频环节逆变器的前级为两路并联的反激式DC/DC变换器,其后级为全桥DC/AC逆变。前级采用SPWM控制技术,其输出电压为馒头波,使得后级全桥逆变电路基本上工作在低频开关状态。实验结果表明,该单相逆变器具有结构简洁、开关损耗低、电气性能好等优点,适合中小功率输出逆变器的理想拓扑。 相似文献
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以研制独立光伏系统逆变器为背景对具有高频DC/DC中间环节逆变器进行了研究和设计,采用了FB-PS-PWMZVS技术,引入了新一代软开关控制器UCC3895,提出了互补型脉宽调制(CPWM)的单极性正弦逆变概念,并将SG3525引入SPWM逆变控制中。实验和仿真验证了设计思想和设计方案。 相似文献
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本文提出了一种单极性SPWM控制的高频链逆变电路拓扑结构,并给出了其相应的控制方案。初级双正激变换器的作用是将直流输入电压斩波成两组SPWM电压脉冲序列,并实现高频链隔离。分离式SPWM控制方案的采用,保证了主电路在调制度大于0.5时仍能正常工作。次级电路是由四只整流二极管,两只主开关管及两个续流和能量回馈支路组成的。续流和能量加馈支路的存在解决了高频链逆变器存在的固有电压过冲问题。由于次级主开关管是对电压脉冲进行开关,自然实现了软开关。实验结果表明该方案是简洁可行的。 相似文献
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针对家用变频空调压缩机出现的高频噪声突出的问题,从噪声源和传递路径两方面进行了研究.在噪声源方面,基于脉宽控制技术和电机气隙磁场谐波理论研究了高频噪声源的产生机理,明确5000 Hz噪声主要是由控制器载波频率与转子磁动势相互作用形成谐波电磁力波产生,并对高频5000 Hz噪声与载波频率的相关性进行了试验验证.在传递路径方面,明确了电机上部空腔区域壳体刚性较弱引起壳体共振是导致压缩机高频5000 Hz噪声较大的核心原因,并通过声辐射仿真分析提出电机上部空腔区域增设隔板和电机上部空腔减短两个优化方案.试验结果表明,电机上部空腔区域增设隔板方案和电机上部空腔减短方案在5000 Hz频段噪声分别改善5.8 dB(A)和6.9 dB(A),验证了优化方案的有效性,为家用变频空调压缩机高频噪声问题改善提供了理论依据和指导. 相似文献
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本文分析了传统电磁炉主谐振电路的工作原理,针对其在实际应用中所存在的不足,设计出一种基于软开关的新型电磁炉高频变换器,并详细论述了该变换器的整个工作过程.通过实验验证,结果表明基于软开关的新型电磁炉高频变换器具有低功耗及带负载能力强等特点,有效地解决了当前电磁炉在低功率工作时,电路热损耗大和功率管易损坏等问题. 相似文献
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Okuno A. Kawano H. Sun J. Kurokawa M. Kojina A. Nakaoka M. 《Industry Applications, IEEE Transactions on》1998,34(4):713-718
This paper describes the latest feasible developments of a voltage-source-type series-capacitor-commutated load-resonant high-frequency bridge inverter using static induction transistors (SITs) for industrial induction-heating and melting applications. A load-adaptive variable-frequency tuned controller, composed of a phase-locked loop integrated circuit (PLLIC) device, a pulse amplitude modulation (PAM) power controller employing a phase-controlled AC/DC converter, and protective control schemes for overvoltage and/or overcurrent generation, is also demonstrated for this series resonant inverter. In addition to these, a short-circuit test of a high-power SIT incorporated into the bridge leg high-frequency series resonant inverter is carried out from a practical point of view and evaluated, in order to obtain important design data considering reliable switching characteristics of large-capacity SITs and to realize cost-effective protective circuits for SITs 相似文献
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由于大功率、高频高温等运行环境的需求,碳化硅(SiC)器件成为新一代半导体器件的代表,但其尖峰问题一直制约着这一新型器件的发展。以SiC金属氧化物半导体场效应晶体管(SiC MOSFET)为研究对象,着重从逆变器中运用SiC器件的方面来进行尖峰问题的研究,分析了SiC MOSFET在开关过程中产生尖峰和振荡的原因,通过增加RC缓冲电路的方法对SiC的尖峰和振荡问题进行优化,结果证明RC缓冲电路可以降低SiC器件产生的尖峰和振荡。通过多组实验进行数据曲线的拟合,确定了RC缓冲电路中缓冲电容与缓冲电阻的关系表达式。 相似文献