Comparative study on early stages of film growth for transparent conductive oxide films deposited by dc magnetron sputtering

Early stages of film growth were investigated on three different kinds of representative transparent conductive oxide films including tin doped indium oxide (ITO), indium zinc oxide (IZO) and gallium doped zinc oxide (GZO) films deposited on unheated alkali free glass substrates by dc magnetron sputtering. The variations in sheet resistance, film coverage and average surface roughness showed clearly that ITO and GZO films possessed Volmer-Weber growth mode. In contrast, the evolution of islands is not clearly observed for IZO film. The nucleation density of IZO film is considered to be much higher than that of ITO and GZO films.     

Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO₂ contents (CeO₂ : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 °C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 °C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 × 10^− 4 Ωcm, which was deposited using a 3.0 wt.% CeO₂ doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 °C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.     

Material properties and growth control of undoped and Sn-doped In2O3 thin films prepared by using ion beam technologies

Undoped (IO) and Sn-doped In₂O₃ (ITO) films have been deposited on glass and polymer substrates by an advanced ion beam technologies including ion-assisted deposition (IAD), hybrid ion beam, ion beam sputter deposition (IBSD), and ion-assisted reaction (IAR). Physical and chemical properties of the oxide films and adhesion between films and substrates were improved significantly by these technologies. By using the IAD method, non-stoichiometry and microstructure of the films were controlled by changing assisted oxygen ion energy and arrival ratio of assisted oxygen ion to evaporated atoms. Relationships between structural and electrical properties in ITO films on glass substrates were intensively investigated by using the IBSD method with changing ion energy, reactive gas environment, and substrate temperature. Smooth-surface ITO films (R_rms ≤ 1 nm and R_p-v ≤ 10 nm) for organic light-emitting diodes were developed with a combination of deposition conditions with controlling microstructure of a seed layer on glass. IAR surface treatment enormously enhanced the adhesion of oxide films to polymer substrate. The different dependence of IO and ITO films' properties on the experimental parameters, such as ion energy and oxygen gas environment, will be intensively discussed.     

Polycrystalline growth and recrystallization processes in sputtered ITO thin films

Indium tin oxide (ITO) thin films with various thicknesses from 170 to 700 nm have been grown onto unheated glass substrates by sputtering from ceramic target, and subsequently annealed in vacuum at temperatures ranging from 250 to 350 °C. The structure, morphology and electro-optical characteristics of the ITO samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. Polycrystalline ITO growth has been found varying with film thickness. The thickness also determined the recrystallization achievable by annealing and the electro-optical thin film properties.     

Ultraflat indium tin oxide films prepared by ion beam sputtering

Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; R_rms=0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (R_rms=2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (R_rms=0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions.     

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.     

Influence of Au underlayer thickness on the electro-optical properties of ITO/Au layered films deposited by magnetron sputtering on unheated polycarbonate substrates

Transparent and conducting tin-doped indium oxide (ITO) and ITO/Au multilayered films were prepared on polycarbonate (PC) substrates by magnetron sputtering without intentional substrate heating. In order to consider the influence of the Au thickness on the optoelectrical properties and structure of ITO/Au films, the thickness of the Au underlayer was varied from 5 to 20 nm. The optoelectrical properties of the films were quite dependent on the Au film thickness. The lowest sheet resistance of 11 Ω/sq. and an optical transmittance of 61% with respect to air was obtained from ITO (95 nm)/Au (5 nm) films. Thin film crystallinity was also affected by the presence of the Au underlayer and varied with the thickness of the Au films. In X-ray diffraction (XRD) spectra, ITO films did not show any characteristic diffraction peak, while ITO/Au films with a 5-nm Au underlayer showed a characteristic diffraction peak. From the figure of merit, it can be concluded that the most effective Au thickness in ITO/Au films is 5 nm.     

Durability study on sputtered indium tin oxide thin film on Poly Ethylene Terephthalate substrate

This paper discusses the durability of the DC-Magnetron sputtered Indium Tin Oxide (ITO) thin films on 127-μm Poly Ethylene Terephthalate substrate under harsh environmental conditions and high cyclic bending fatigue. Two sets of experiments were conducted on a 60 Ω per square ITO sheet. The first set of experiments was conducted on samples with different temperature and humidity combinations while being subjected to cyclic bending fatigue loadings. The other set of experiments was conducted on samples with the same combinations of temperature and humidity but without bending fatigue loading. Design of experiments tool was used to study the effect of temperature, humidity, bending fatigue and the interaction among them on the percent change in electrical resistance of the ITO film. It was found that bending fatigue is the dominant factor to the electrical failure of ITO thin film. The failure was also influenced by temperature and humidity, especially combined high temperature and high humidity. Therefore, it is suggested that controlling the environmental factors during the roll to roll manufacturing process is crucial on quality of the products.     

Deposition by magnetron sputtering and characterization of indium tin oxide thin films

In this work the properties of indium tin oxide (ITO) films deposed on glass substrates by magnetron sputtering technique in the temperature range below 200 °C are studied by various methods. The physical properties of ITO thin films have been investigated using optical transmittance, photoluminescence, atomic force microscopy, ellipsometry, Hall-effect and four point probe methods. It is established that properties of ITO layers depend drastically on the temperature and oxygen partial pressure during the deposition process and exhibit some peculiarities of the surface morphology. It is found that the band gap energy of this material varies in the energy range from 4.1 to 4.4 eV and depends on the growth conditions. It is suggested that local deviations from the stoichiometry and defects are the main physical reasons of Burstein-Moss shift of the optical band gap.     

Electrochemical polymerization of an aniline-terminated self-assembled monolayer on indium tin oxide electrodes and its effect on polyaniline electrodeposition

Indium tin oxide (ITO) transparent electrodes were surface modified by a self-assembled monolayer of N-phenyl-γ-aminopropyl-trimethoxysilane (PAPTS). Cyclic voltammetry of the PAPTS monolayer in aniline-free aqueous electrolyte showed the typical shape of a surface-confined monomer, due to the oxidation of the aniline moieties. This process resulted in a two-dimensional polyaniline film with uniform thickness of 1.3 nm, as measured by atomic force microscopy. X-ray photoelectron and UV–visible spectroscopic techniques confirm the formation of a conjugated polymer film. The influence of the surface modification of ITO electrodes on polyaniline electrochemical deposition was also studied. The initial oxidation rate of aniline increased in the PAPTS-modified ITO electrodes, although the overall film formation rate was lower than that of unmodified ITO electrodes. The morphology of the electrodeposited polyaniline films on PAPTS-modified and unmodified ITO electrodes was studied by atomic force microscopy. Films of smaller grain were grown in the PAPTS-modified ITO as compared to films grown on unmodified ITO. A blocking effect due to the propyl spacer is proposed to explain the reduced electron transfer in PAPTS-modified electrodes.     

Refractive indices of textured indium tin oxide and zinc oxide thin films

The refractive indices of textured indium tin oxide (ITO) and zinc oxide (ZnO) thin films were measured and compared. The ITO thin film grown on glass and ZnO buffered glass substrates by sputtering showed distinct differences; the refractive index of ITO on glass was about 0.05 higher than that of ITO on ZnO buffered glass in the whole visible spectrum. The ZnO thin film grown on glass and ITO buffered glass substrates by filtered vacuum arc also showed distinct differences; the refractive index of ZnO on glass was higher than that of ZnO on ITO buffered glass in the red and green region, but lower in the blue region. The largest refractive index difference of ZnO on glass and ITO buffered glass was about 0.1 in the visible spectrum. The refractive index variation was correlated with the crystal quality, surface morphology and conductivity of the thin films.     

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl₃, SnCl₄ and NH₃ solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ~ 40-1160 nm. After calcination at 550 °C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.     

Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 × 10^− 4 Ω cm on glass while that on the polyimide was 1.9 × 10^− 4 Ω cm. Substrate temperatures above 100 °C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells.     

Laser patterning with beam shaping on indium tin oxide thin films of glass/plastic substrate

In this research the laser beam shaper component has been used to obtain top-hat intensity distribution laser beam to perform line scribing and to perform electrode patterning on Indium thin oxide (ITO) thin films deposited on glass and plastic substrate. ITO films were removed with third harmonic Nd:YAG laser processing system. The pulse duration, laser output power, pulse repetition rate and scanning speed parameters of straight line patterning and electrode patterning on different types of substrates were discussed, respectively. The experimental results are measured by optical microscope and scanning electron microscope to evaluate the processing parameters and surface properties of ITO thin films.     

Microstructure-Property relationships in thin film ITO

Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by pulsed laser deposition (PLD) with an ITO (In₂O₃-10 wt.% SnO₂) target and deposited on borosilicate glass substrates. By changing independently the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. These different microstructures were mainly investigated not only by transmission electron microscopy (TEM) with cross-section and plan-view electron micrographs, but also by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction. Composition changes in ITO thin films grown under different deposition conditions were characterized by energy dispersive X-ray spectroscopy (EDX). The optical and electrical properties were studied respectively by UV-visible spectrophotometry and a four-point probe. The best compromise in terms of high transmittance (T) in the visible range and low resistivity (ρ) was obtained for films deposited between 0.66 and 2 Pa oxygen pressure (P_O2) at 200 °C substrate temperature (T_s). The influence of P_O2 and T_s on the microstructure and ITO film properties is discussed.     

Spectrographic ellipsometry study of a liquid crystal display substrate consisting of thin films of SiO2, polyimide and indium tin oxide on glass

Variable angle spectrometric ellipsometry at room temperature is used to determine thin film parameters of substrates used in liquid crystal displays. These substrates consist of sequential thin films of polyimide (PI), on indium tin oxide (ITO),on SiO₂ deposited on a glass backing approximately 1.1 mm thick. These films were studied by sequentially examining more complex systems of films (SiO₂, SiO₂-ITO, SiO₂-ITO-PI). The SiO₂ layer appears to be optically uniform and flat. The ITO film is difficult to characterize. When this surface film's lower surface is SiO₂ and upper surface is an air-ITO-interface it is found that including surface roughness and variation of the optical properties with ITO thickness in the model improved the fit; suggesting that both phenomena exist in the ITO films. However, the surface roughness and graded nature of optical properties could be not determinable by ellipsometry when the ITO is coated with a polyimide film. The PI films are ellipsometrically flat and over the wavelength range from 500 to 1400 nm the real refractive index of polyimide films varying in thickness between 25 and 80 nm is well modeled by a two-term Cauchy model with no absorption. The ellipsometric thickness of the ITO layer is the same as the profilometric thickness; however, the ellipsometric thickness of the polyimide layers is roughly 10 nm larger than that obtained from the profilometer. These final observations are consistent with the literature.     

Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on polyethylene terephthalate substrates

Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO₂ buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO₂ buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO₂ buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias.     

Electrochemical impedance spectroscopy investigation on indium tin oxide films under cathodic polarization in NaOH solution

The electrochemical corrosion behaviors of indium tin oxide (ITO) films under the cathodic polarization in 0.1 M NaOH solution were investigated by electrochemical impedance spectroscopy. The as-received and the cathodically polarized ITO films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction for morphological, compositional and structural studies. The results showed that ITO films underwent a corrosion process during the cathodic polarization and the main component of the corrosion products was body-centered cubic indium. The electrochemical impedance parameters were related to the effect of the cathodic polarization on the ITO specimens. The capacitance of ITO specimens increased, while the charge transfer resistance and the inductance decreased with the increase of the polarization time. The proposed mechanism indicated that the corrosion products (metallic indium) were firstly formed during the cathodic polarization and then absorbed on the surface of the ITO film. As the surface was gradually covered by indium particles, the corrosion process was suppressed.     

Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO₂) between the ITO film and the PET substrate. ITO films deposited on SiO₂-coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO₂-coated PET are 85% and 0.90 × 10^− 3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO₂-coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO₂ buffer layer.     

Pulsed laser deposition of indium tin oxide films on flexible polyethylene naphthalate display substrates at room temperature

Pulsed laser deposition was used to deposit high-quality indium tin oxide (ITO) thin solid films on polyethylene napthalate (PEN) flexible display substrates. The electrical, optical, microstructural, mechanical and adhesive properties of the functional thin layer were investigated as a function of a narrow range of background oxygen gas pressure at room temperature, which is the most desirable thermal condition for growing transparent conducting oxides on flexible display polymer substrates. ITO films (240 ± 35 nm thick) deposited on PEN at room temperature in the range of 0.33 to 2.66 Pa background oxygen pressure are observed to exhibit low electrical resistivity (~ 10^− 4 Ω cm) and high optical transmission (~ 90%). Electromechanical uniaxial tensile testing, of the hybrid thin structures, results in crack onset nominal strains of around 2%. The ITO surface adhesion reaches a maximum at 1.33 Pa deposition pressure.