YAG单晶刻面发光屏的研究

开发了用于投影显示的Ｌｕ＾３＋，Ｇａ＾３＋双掺杂的Ｃｅ，Ｔｂ：ＹＡＧ单晶绿色发光屏，但这种发光屏的外发光效率相对较低。一种截顶圆锥结构可以大大提高出射光通量，理想状况下可使发光效率达到原来的５．２倍。在详细分析了这种理想发光模型之后，采用晶体的各向异性腐蚀工艺形成了具有近似这种结构的网状刻面屏，外发光效率提高到原来的２．３倍。     

掺杂对白光LED用YAG：Ce荧光粉发光性能的研究

采用高温固相法合成了YAG：Ce荧光粉，研究了掺杂元素对YAG荧光粉发光性能的影响。研究表明：YAG：Ce荧光粉亮度随着Ce含量增加先上升后下降。Sm的掺杂对荧光粉发射光谱峰位无影响，而发光亮度却明显下降。随着Gd掺入量的提高，YAG荧光粉的发射光谱发生红移，发光亮度有所下降。YAG：Ce荧光粉的发射光谱，随着Lu掺入量的提高，发射光谱发生蓝移，发光亮度略有下降。在YAG：Ce中掺入Pr，发射光谱在610nm处出现尖锐的红峰，但随着Pr掺入量的增加，亮度明显下降。     

YAG:Tb的低成本制备及发光特性研究

从降低YAG:Tb的生产成本出发,选用廉价的工业氢氧化铝为原料,并分别通过高温固相法和溶胶一凝胶法制备了YAG:Tb荧光粉.采用SEM、XRD和荧光光谱等技术研究了荧光粉的粒度、分散性及烧结和发光特性.结果表明,溶胶一凝胶法比高温固相法具有较大优势,可以在较低温度下获得YAG纯相,产物具有典型的Tb~(3+)发射光谱.     

助熔剂对YAG:Tb荧光粉发光性能和形貌的影响

助熔剂在荧光粉合成中有重要的作用.系统地研究了一元和多元助熔剂对荧光粉发光性能和颗粒形貌的影响.实验结果表明,合适的助熔剂能有效地促进单相YAG的合成;利于发光离子进入晶格,提高荧光粉的发光强度;改善荧光粉颗粒的形貌,降低高温合成中荧光粉的硬度,减轻后处理的难度.     

YAG∶Eu的晶体结构与发光特性

利用凝胶-燃烧法制备出单相的(Y1-xEux)3Al5O12(x=0.0～0.1)粉体。X射线衍射试验表明所有样品均呈单相立方晶系结构(Ia3d),通过对其晶体结构解析发现随着Eu3+掺杂浓度的增加YAG∶Eu晶格常数有增大的趋势,但在x=0.07附近出现晶格坍塌。与此同时,对其发光特性的测试表明,除x=0.10时出现浓度猝灭外,其他掺杂浓度样品的发光强度与晶格常数的变化趋势一致。从材料晶体结构变化的角度讨论了对其发光性能的影响。     

共沉淀法YAG、Nd∶YAG纳米粉体的制备、结构与光谱性能研究

采用共沉淀方法,以氨水为沉淀剂,与硝酸盐的混合溶液反应得到YAG、Nd∶YAG前驱体,并在不同的温度下对前驱体进行锻烧。利用红外光谱(FT IR)、热重/差热分析(TG/DTA)、X射线衍射(XRD)、透射电镜(TEM)等技术对YAG前驱物及煅烧粉体进行表征,对Nd∶YAG粉体的发光性能进行了测试。结果表明,在800℃下煅烧YAG前驱体,得到纯YAG晶相,无YAP、YAM中间相的出现;XRD、TEM和比表面分析表明在800～1000℃煅烧所得粉体晶粒直径为40～100nm,具有较好的分散性。同时荧光测试表明Nd∶YAG粉体具有良好的发光性能。     

共沉淀法YAG、Nd:YAG纳米粉体的制备、结构与光谱性能研究

采用共沉淀方法,以氨水为沉淀荆,与硝酸盐的混合溶液反应得到YAG、Nd：YAG前驱体,并在不同的温度下对前驱体进行锻烧。利用红外光谱(FT-IR)、热重／差热分析(TG／DTA)、X射线衍射(XRD)、透射电镜(TEM)等技术对YAG前驱物及煅烧粉体进行表征,对Nd：YAG粉体的发光性能进行了测试。结果表明,在800℃下煅烧YAG前驱体,得到纯YAG晶相,无YAP、YAM中间相的出现;XRD、TEM和比表面分析表明在800～1000℃煅烧所得粉体晶粒直径为40～100nm,具有较好的分散性。同时荧光测试表明Nd：YAG粉体具有良好的发光性能。     

YAG：Ce，Tb粉体的共沉淀法制备与发光性能

以NH4HC03溶液为沉淀剂,采用共沉淀法制备了前驱体,在氩气气氛中经1200℃煅烧2h合成了Y2.91-xCe0.06TbxAl5O12（YAG：Ce,Tb）粉体。利用X射线衍射仪、透射电子显微镜、荧光光谱仪对样品的结构、形貌及发光性能进行了表征。所得粉体为体心立方相YAG：Ce,Tb。粉体颗粒团聚成珊瑚虫形。YAG...     

提拉法Tm:YAG晶体的生长缺陷研究

采用提拉法(CZ)生长了质量优异的Tm:YAG晶体.部分晶片在1000℃的空气气氛中退火25h.借助光学显微镜、扫描电子显微镜(SEM),结合化学腐蚀法,对Tm:YAG晶体退火前后(111)面的缺陷特征进行了研究. Tm:YAG晶体(111)面的位错腐蚀坑呈三角形. 在偏光显微镜下观察了退火前后Tm:YAG晶体(111)面的应力双折射.同时应用高分辨X射线衍射法测定了晶体的完整性.实验结果表明,长时间空气气氛下高温退火有效降低了晶体中总的位错密度,提高了晶体质量.     

Tm：YAG和Ho：YAG单晶光纤的光谱及Cr~（3＋）的敏化作用

测量了Ｔｍ３＋和Ｈｏ３＋离子的吸收谱以及Ｃｒ３＋离子在ＹＡＧ单晶光纤中的Ｒ荧光线的寿命．用Ｄｅｘｔｅｒ理论讨论了Ｃｒ３＋离子的能量转移效率。结果表明Ｃｒ３＋→Ｔｍ３＋的能量转移效率比Ｃｒ３＋→Ｈｏ３＋的大．     

水热均匀沉淀-熔盐煅烧法制备YAG:Ce~(3+)荧光粉及其发光性能的研究

以Na2SO4-K2SO4为熔盐,采用水热均匀沉淀一熔盐煅烧法制备了YAG:Ce33+黄色荧光粉,应用XRD、SEM、荧光分光光度计等测试手段研究了熔盐辅助煅烧对粉体结构、形貌和发光性能的影响.结果表明,以尿素为沉淀剂,采用水热均匀沉淀法制备的前驱体,经Na2SO4-K2SO4熔盐辅助煅烧,900℃时已完全转变为YAG相,与固相法相比,YAG相的完全转变温度降低了600℃,与前躯体直接煅烧相比,YAG相的完全转变温度降低了300℃,荧光粉的发光强度提高了2.4倍.     

Luminescent properties of YAG:Ce phosphor powders prepared by hydrothermal-homogeneous precipitation method

Y_3 − xCe_xAl₅O₁₂ (YAG:Ce³⁺) phosphor powders were successfully prepared by hydrothermal-homogenous precipitation (HHP) method, under mild conditions with inexpensive aluminum and yttrium nitrates as the starting materials and urea as homogenous precipitant. The pure YAG crystalline phase could be formed after hydrothermal treatment at 100 °C for 4 h and 240 °C for 20 h and postannealing process at 1200 °C for 2 h. All of the as-prepared YAG:Ce³⁺ powders did not have the CeO₂ phase. The photoluminescence spectrum of crystalline YAG:Ce³⁺ phosphors showed the emission intensity of phosphor increased with increasing the annealed temperature and reached its maximum as the molar fraction of cerium ion was 0.10, and also showed the maximum emission wavelength nearly unchanged with the calcination temperature and cerium doping concentration.     

光学基质粉体YAG及荧光粉体Ce:YAG的制备与表征

采用共沉淀法制备出尺寸分布均匀、分散性良好的立方相钇铝石榴石(YAG)与Ce:YAG纳米粉体.考察了煅烧温度和时间对粉体物相和颗粒大小的影响及Ce~(3+)的掺杂量对Ce:YAG粉体的荧光光谱的影响.借助IR、XRD、BET、SEM和荧光分析仪等测试手段对前驱体、YAG及Ce:YAG纳米粉体进行了表征与分析.结果表明:共沉淀前驱体经900℃煅烧2h后可得到纯立方相的YAG(Ce:YAG)纳米粉体;所得Ce:YAG粉体具有较好的荧光特性且Ce~(3+)的掺杂量增加会造成其荧光光谱红移.     

激光晶体YAG中E_r~（3＋）离子最佳掺杂浓度

测试了２ａｔ．％Ｅｒ：ＹＡＧ晶体的吸收谱，荧光谱，４Ｉ１１／２、４Ｉ１３／２态荧光衰减曲线．由荧光衰减曲线拟合得到荧光寿命τ０和描述离子间的相互作用微参量ＣＤＡ，并将其代入作者推导得到的最佳掺杂浓度的近似式，计算出Ｅｒ３＋离子在ＹＡＧ晶体中的最佳掺杂浓度，并与实验结果进行了比较     

改善MEMS闪耀光栅衍射效率的研究

研究了在硅材料上利用MEMS (Micro-Electro-Mechanical System)的各向异性腐蚀技术制备 闪耀光栅。采用氧化削尖工艺去除光栅制备过程中掩膜在闪耀面上留下的平台,得到一个连续的闪耀面;同时对闪耀面进行表面抛光,改善闪耀面的粗糙度,减小对入射光的散射。理论分析和实验测试证明,该工艺方法能够将MEMS闪耀光栅的衍射效率提高10%左右。     

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively coupled plasma reactive ion etcher is presented, which selectively reveals desired crystal planes in monocrystalline diamond by controlling the etching conditions. Using this principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half‐tapering angle up to 21° is achieved, the highest angle reported in the literature, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of a crystallographic orientation dependent reactive ion etching principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for the structuring and patterning of other single crystal materials as well.     

Effect of Threshold Stress on Anisotropic Creep Properties of Single Crystal Nickel-Base Superalloy SRR99

The influence of orientation on the creep properties of the nickel-base single crystal superalloy SRR99 was investigated at 760℃ and various levels of applied stress.It was found that the effect of anisotropy was strikingly prominent at this temperature.Deformation mechanisms of single crystals with three principal orientations at 760℃/790 MPa were explained according to detailed observations of dislocation arrangements by means of transmission electron microscopy (TEM).Liability to shearing γ' precipitates for [011] orientation and co-planar slip for [111] orientation resulted in poor creep strength and short stress rupture life.It was also found that the apparent primary creep strain could be measured when the applied stress was increased to 565 MPa.Modified power law equation was adopted and the concept of a threshold stress σ 0 which determines dislocation looping or shearing to be activated was then involved.Through detailed calculations,the threshold stress was obtained to further analyse the distribution of the applied stress and better rationalize the anisotropic creep behaviour in the stereographic triangle in combination with TEM observations.