高饱和度蓝色磷光有机发光器件

使用典型天蓝色磷光材料FIrpic作为磷光金属微腔有机发光器件（OLED）的发光层,以高反射的Al膜作为阴极顶电极和半透明的Al膜作为阳极底电极,采用空穴和电子注入层MoO3和LiF,制备了结构glass／Al（15nm）／MoO3（znm）／NPD（40nm）／mCP：Flrpic（30Ftm,7％）／BCP（20n...     

有机白光LED

有机白光LED主要有电致发光与光致发光两类。电致发光的主要机理有:量子阱发光、激基复合物发光和能量转移。人们对有机电致发光白光LED研究较多,不久将有产品问世;而对光致发光研究较少。与电致发光相比,光致发光造价更小,其荧光量子效率或许比电致发光更高。有机白光LED制备工艺简单、成本低功耗小,具有巨大的应用价值及潜在的市场。对发光显示技术,有机白光LED代表了一条“便宜”经济的路径。综述了有机白光LED的机理及发展现状。     

Suppression of viewing angle dependence of organic light emitting diodes by introduction of circular polarizer with nanoporous polymer film

To improve poor viewing angle characteristics of top emission organic light emitting diodes (TEOLEDs) without any serious pixel blur phenomena, we applied a circular polarizer (CP) film modified by nanoporous polymer film (NPF). From this approach, we could improve the color shift significantly (Δu'v’ in CIE 1976 with viewing angle, from 0.0165 to 0.0114), and expand angular light emission distribution of off-axis by applying CP with NPF. We found that black color shift was little associated with NPF position change although black color was slightly faded tint by applying NPF, as like plasma display panel(PDP)’s off condition. Very interestingly, we found that the reflectance was not changed seriously whether NPF exists between glass encapsulation and CP or not. Besides, we investigated the pixel blur level when we applied different condition in encapsulation thickness and morphology of diffusing films. As a result, we found that the pixel blur phenomena can be significantly suppressed by applying thin encapsulation and NPF type diffuser film.     

柔性有机电致发光器件的研究进展

柔性OLED技术尚未成熟,要实现产业化,其稳定性和显示效率仍有待进一步改善.本文从FOLED衬底材料的选取和处理、阳极材料的选取和设计、柔性器件的包封等方面,介绍了FOLED几项关键技术研究进展,并对其研究与应用前景进行了展望.     

Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes

In this work, we developed a single high-performance SiN_x encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 °C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 × 10⁻⁵ g/m²·day. To verify the stability of the PECVD process, we applied the SiN_x encapsulation layer directly to top-emitting organic light-emitting diodes. The results showed minor changes in the current-density–voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.     

采用DCJTB作为色彩转换膜实现白色有机电致发光的研究

采用橙红色荧光材料4-(二氰基亚甲基)-2-叔丁基-6-(1,1,7,7-四甲基久罗尼定基-4-乙烯基)-4H-吡喃(DCJTB)作为色彩转换材料,结合蓝色有机电致发光器件实现了较好的白光发射。分别通过真空蒸镀和旋转涂覆两种不同的工艺进行色彩转换膜(CCL)的制备,发现不同的转换膜制备工艺对白光器件的性能影响不明显。当采用浓度比例为20mg/ml的DCJTB溶液通过旋涂方法制备CCL后,所得到白光器件的起亮电压为3.4V,在12V时达到最大亮度为1 939cd/m2,且该器件的最大电流效率为1.34cd/A(在电流密度为3.23mA/cm2时)。当驱动电压从5V增加到9V时,该白光器件的色坐标仅从(0.36,0.33)变化到(0.33,0.31)。表现出良好的色纯度和色稳定性。     

基于BAlq的有机电致发光器件的磁效应

研究了ITO/NPB(40nm)/BAlq(60nm)/BCP(5nm)/LiF(0.8nm)/AI有机电致发光器件(OLED)的磁效应.实验结果表明,磁场在10mT时,器件的效率最大增加了34%,这一结果是由于三线态激子与三线态激子间的相互淬灭产生激发单线态激子从而使单线态激子比率增加,致使电致发光(EL)增强.当磁...     

新型间隔层对荧磷杂化白光OLED器件性能的影响

以杂化白光结构ITO/HAT-CN(10 nm)/TAPC(30 nm)/TCTA(10 nm)/TCTA:PO -01(10 nm ,4%)/MADN:DSA-ph(10 nm,5%)/BPhen(40 n m)/Liq(1nm)/Al(100 nm)为基础,分别用CBP 、SO和SO:TCTA作为间隔层,调节厚度及掺杂比例,研究不同间隔层对杂化白光器件性能的 影响。实验结果表明,SO作间隔层可以有效提高电子与空穴在黄光层的复合,增大器件电子 传输能力而使器件偏向白光,提高器件效率,且由于SO高的三线态能级,可以有效控制激子 复合区域的移动,器件色稳定性也得到提高。再将TCTA与SO掺杂作为间隔层,增强空穴传输 ,调控空穴和电子的传输与平衡,进一步提升器件性能,当SO∶TCTA掺杂比为9∶1时,有最大电流效 率31.60 cd/A,最大功率效率30.16 lm/W,电 流密度为10 mA/cm²时,CIE色坐标为(0.39 ,0.43),从0.1 mA/cm²－80 mA/cm²电流密度变化下色坐标变化(Δx,Δy)仅为(0.02),色坐标漂移小,色稳定性好。     

Low voltage operating organic light emitting transistors with efficient charge blocking layer

Charge injection/blocking layers play important roles in the performances of organic electronic devices. Their incorporation into organic light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) of these devices. In this work, two hole blocking molecules are integrated into tris-(8-hydroxyquinoline) aluminum (Alq₃) based light emitting transistors under operating voltage as low as 5 V. The effects of hole blocking and electron injection are decoupled through the differences in the energy levels. Significantly improved optical performance is achieved with the molecule of suitable energy level for electron injection. Surprisingly, a decreased performance is observed in the case of another hole blocking molecule evidencing that charge injection overweighs charge blocking in this device architecture.     

Highly efficient white transparent organic light emitting diodes with nano-structured substrate

Enhancing outcoupling efficiency and stabilizing emission spectra are of high technical importance in realizing high quality white transparent organic light emitting diodes (TOLEDs). In this work, we demonstrate a random nano-scattering layer (RSL) as a structure which can effectively address those tasks. The RSL contributes to bottom and top emissions by scattering and reflection, respectively. With the use of RSL, we achieved remarkable total efficiency enhancement of 101%. Also, a viewing angle independent stable white spectrum with a color rendering index of 79 was achieved. With its straight forward processing, our RSL can be readily applied to deal with various photonic applications to enhance both efficiency and emission spectra.     

CdS薄层对有机电致发光器件性能的影响

将光电材料硫化镉(CdS)薄层插入到结构为ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al的白光有机发光器件(OLED)的Alq3和LiF之间,研究了CdS对OLED性能的影响。结果表明,0.1nm厚的CdS插入Alq3和LiF之间的器件性能最好。器件电压从7 V变化到14 V时,色度均在白光的中心区域;当电压为7V时,器件的最大电流效率为9.09cd/A;当电压为14V时,器件的最大亮度为16 370cd/m2。不加CdS时,当电压为8V时,器件的最大效率为5.16cd/A;当电压为14V时,最大亮度为6 669cd/m2。加CdS的器件比不加CdS的器件最大效率提高了1.76倍,最大亮度提高了2.42倍。     

新型双空穴注入型高效有机电致发光二极管

采用一种新型有机电致发光二极管（OLED）的阳极结构,在玻璃衬底上以半透明的A1膜为出光面,通过在空穴注入层（HIL）和空穴传输层（HTL）中间插入MoOa层,制备了底发射OLED。制备的器件结构为Glass／Al（15nm）／HAT—CN（IOnm）／M003（30nm）／NPB（30nm）／Alq3（60nm）／B...     

Thermal buffer materials for enhancement of device performance of organic light emitting diodes fabricated by laser imaging process

Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as an excellent uniformity of transfer film thickness, a capability of multilayer stack transfer and a possibility to fabricate high resolution as well as large-area display. Nevertheless, it has been an obstacle to use such a laser imaging process as a commercial technology so far because of serious deterioration of the device performances plausibly due to a re-orientation of the molecular stacking especially in the emitting layer during thermal transfer process. To improve device performances, we devised a new concept to suppress the thermal degradation during such kind of thermal imaging process by using a high molecular weight small molecular species with large steric hindrance as well as high thermostability as a thermal buffer layer to realize highly efficient LITI devices. As a result, we obtained very high relative efficiency (by EQE) up to 91.5% at 1000 cd/m² from the LITI devices when we utilize 10-(naphthalene-2-yl)-3-(phenanthren-9-yl)spiro[benzo[ij]tetraphene-7,9′-fluorene] as a thermal buffer material.     

Investigation of TDAPBs as hole‐transporting materials for organic light‐emitting devices (OLEDs)

The performance of organic light‐emitting devices (OLEDs) is strongly influenced by the electronic properties of the employed materials. In order to determine the effect of these materials' parameters, several different hole‐transporting 1,3,5‐tris(4‐diphenylaminophenyl)benzenes (TDAPBs) were synthesised. These TDAPBs contained different substituents, different numbers of substituents and different positions of theses substituents. For the evaluation of the electronic properties, cyclic voltammetry was employed in order to determine the HOMO values, and time‐of‐flight (TOF) measurements to obtain the hole mobilities. OLEDs were prepared consisting of the TDAPBs blended in a polymer matrix, and of Alq₃ as electron‐conducting and light‐emitting layer. These devices were investigated regarding their current density/voltage characteristics, efficiencies, onset voltages for electroluminescence, and lifetimes. For hole‐transporting blend systems an exponential relationship between the current density and the HOMO levels of the TDAPBs was found. However, even though the HOMO values cover a range from −5.09 to −5.35 eV, no effects on the performance of the OLEDs were detected for electroluminescent two‐layer systems. In this case the initial voltage seems to be a determining parameter for the behaviour of the devices during operation. Copyright © 1999 John Wiley & Sons, Ltd.     

High quantum efficiency in blue phosphorescent organic light emitting diodes using ortho-substituted high triplet energy host materials

A high triplet energy material derived from carbazole and ortho terphenyl, 3,3′′-di(9H-carbazole-9-yl)-1,1′:2′,1′′-terphenyl (33DCTP), was synthesized as the host material for blue phosphorescent organic light-emitting diodes (PHOLEDs). The 33DCTP host showed high glass transition temperature of 110 °C, high triplet energy of 2.77 eV, the highest occupied molecular orbital of ?6.12 eV and the lowest unoccupied molecular orbital of ?2.52 eV. High efficiency blue PHOLEDs were developed using the 33DCTP host and bis((3,5-difluorophenyl)pyridine) iridium picolinate dopant material, and high quantum efficiency of 23.7% was achieved with a color coordinate of (0.14, 0.28).     

Improved efficiency roll-off at high brightness in simplified phosphorescent organic light emitting diodes with a crossfading-host

We report a high efficiency and low efficiency roll-off green phosphorescent organic light emitting diode using both hole- and electron-transporting host materials in a crossfading profile. To eliminate the energy barrier and reduce the charge carrier accumulation, the host materials are used as transporting layers as well, which also simplifies the device fabrication. It is found out that the recombination zone of gradient doping host sample is not only wider but also extended at high current density, which contributes to the suppressed efficiency roll-off at high luminance. An external quantum efficiency of 21.0% at 1000 cd/m² is obtained, and maintains to 19.3% at 10,000 cd/m².     

A study on full color organic light emitting diodes with blue common layer under the patterned emission layer

Color patterning steps for red, green, and blue emission layers (EMLs) are crucial for the production of full color organic light-emitting diodes (OLEDs). The most common method to form individually patterned EMLs is to use a shadow mask as the key component for patterning. However, most pixel defects are caused by such kinds of patterning steps. Therefore, skipping certain color patterning steps could significantly improve the production yield during the fine metal masking process in the OLED fabrication. A representative example of such approach is the top blue common layer (TBCL) structure with a non-patterned BCL on top of both green and red EMLs. However, this structure could cause blue color mixing in green or red devices. To prevent this effect, we propose a newly devised bottom BCL (BBCL) structure with the BCL that is totally separated from both green and red EMLs. In particular, we utilized 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile interlayer (7 nm) between the underlying BCL and the hole injection layer to completely extinguish blue emission. As a result, both green and red devices with the BBCL structure showed relatively better efficiencies compared to those with the TBCL structure without any color mixing.     

(t-bt)2Ir(acac)超薄层厚度对有机电致发光器件性能的影响

以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)[(tbt)2Ir(acac)]为超薄层,制备了结构为indium tin oxide(ITO)/N,N'-bis(naphthalen-1-yl)-N...     

A high performance inverted organic light emitting diode using an electron transporting material with low energy barrier for electron injection

A high performance inverted green emission organic light emitting diode with a maximum external quantum efficiency of 20% and a maximum power efficiency of 80 lm/W was realized by properly selecting an electron transporting material to have no energy barrier for electron injection between the n-doped electron transporting layer (n-ETL) and the ETL. Based on the energy levels and the current density–voltage characteristics of electron only devices, we demonstrate that the interface between an n-ETL and an ETL even in homo-junction is as important as the interface between the cathode and the n-ETL for efficient electron injection into an emitting layer.     

High stability and low driving voltage green organic light emitting diode with molybdenum oxide as buffer layer

Green organic light emitting diodes (OLEDs) with copper phthalocyanine (CuPc), 4,4′,4″-tris[3-methylphenyl(phenyl)amino]triphenymine (m-MTDATA) and molybdenum oxide (MoO_x) as buffer layers have been investigated. The MoO_x based device shows superior performance with low driving voltage, high power efficiency and much longer lifetime than those with other buffer layers. At the luminance of 100 cd/m², the driving voltage is 3.8 V, which is 0.5 V and 2.2 V lower than that of the devices using CuPc (Cell-CuPc) and m-MTDATA (Cell-m-MTDATA) as buffer layer, respectively. Its power efficiency is 13.6 Lm/W, which is 38% and 30% higher than that of Cell-CuPc and Cell-m-MTDATA, respectively. The projected half-life under the initial luminance of 100 cd/m² is 42,400 h, which is more than 3.8 times longer than that of Cell-m-MTDATA and 24 times that of Cell-CuPc. The superior performance of Cell-MoO_x is attributed to its high hole injection ability and the stable interface between MoO_x and organic material. The work function of MoO_x measured by contact potential difference method and the J–V curves of “hole-only” devices indicate that a small barrier between MoO_x/N,N′-di(naphthalene-1-y1)-N,N′-dipheyl-benzidine (NPB) leads to a strong hole injection, resulting in the low driving voltage and the high stability.