共查询到20条相似文献,搜索用时 46 毫秒
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设计并用分子束外延技术生长了InP基InGaAs/AlAs体系RTD材料,采用传统湿法腐蚀、光学接触式光刻、金属剥离、台面隔离和空气桥互连工艺,研制出了具有优良负阻特性和较高阻性截止频率的InP基RTD单管,器件正向PVCR为17.5,反向PVCR为28,峰值电流密度为56kA/cm^2,采用RNC电路模型进行数据拟合后得到阻性截止频率为82.8GHz,实验为今后更高性能RTD单管的研制,以及RTD与其他高速高频三端器件单片集成电路的设计与研制奠定了基础。 相似文献
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Self-consistent transit-time model for a resonant tunnel diode 总被引:1,自引:0,他引:1
We present a self-consistent compact model for the small-signal impedance of a resonant tunnel diode (RTD) with a finite collector transit time. The effect of the collector transit time on the device impedance is described for three In/sub 0.53/Ga/sub 0.47/AsAlAs-InAs RTDs with current densities ranging from 14 kA/cm/sup 2/ to 570 kA/cm/sup 2/ with various collector spacer lengths for dc biasing in both the positive and negative differential resistance regions. 相似文献
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Nine-state resonant tunneling diode memory 总被引:1,自引:0,他引:1
The authors demonstrate an epitaxial series combination of eight pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes (RTDs) grown by molecular beam epitaxy on InP. This series RTD produces an eight-peak multiple negative differential resistance characteristic with a peak-to-valley current ratio (PVR) exceeding 2 per peak at a peak current density of approximately 6 kA/cm 2. Hysteresis in the current-voltage characteristic is reduced by uniformly Si doping the double-barrier resonant tunneling region at a density of 5×1016 cm-3. Using this multiple-peak RTD in series with a field-effect transistor load, a nine-state multivalued memory circuit is demonstrated 相似文献
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Han Chunlin Chen Chen Zou Penghui Zhang Yang Zeng Yiping Xue Fangshi Gao Jianfeng Zhang Zheng Geng Tao 《半导体学报》2009,30(6):064001-064001-3
We have fabricated Ino.53Ga0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. 相似文献
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Zhiqiang Li Hailin Tang Haitao Liu Yi Liang Qian Li Ning An Jianping Zeng Wenjie Wang Yongzhong Xiong 《半导体学报》2017,38(6):064005-4
Resonant tunneling diodes (RTD) have the potential for compact and coherent terahertz (THz) sources operating at room temperature, but their low output power severely restricts their application in THz frequency range. In this paper, two methods are adopted to increase the peak current of RTD for enhancing its output power. First, different metal contact systems (including Pt/Ti/Pt/Au and AuGe/Ni/Au) for RTD contact are introduced, and a higher current of RTD with Pt/Ti/Pt/Au contact demonstrates the superior contact characteristic of Pt/Ti/Pt/Au contact system. Second, the double barrier structure (DBS) of RTD is well designed to further improve the characteristic of RTD, and a high peak current of 154 kA/cm2 is achieved at room temperature. The improved peak current is very beneficial for increasing the output power of RTD oscillator. 相似文献
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The DC current-voltage characteristics of strained In0.25 Ga0.75As/AlAs resonant tunneling diode (RTD) structures grown on GaAs (100) substrates which also include prepatterned mesas are discussed. The observed peak-to-valley current ratios (PVRs) of 4.5 at 300 K and 15 to 77 K with corresponding peak current densities of 11 and 13 kA/cm2 are the highest values of PVR to date for this strained system and are the same for the nonpatterned and prepatterned regions 相似文献
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对基于Top-Down加工技术的纳米电子器件如:单电子器件、共振器件、分子电子器件等的研究现状、面临的主要挑战等进行了讨论. 采用CMOS兼容的工艺成功地研制出单电子器件,观察到明显的库仑阻塞效应;在半绝缘GaAs衬底上制作了AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs双势垒共振隧穿二极管,采用环型集电极和薄势垒结构研制的共振隧穿器件,在室温下测得其峰谷电流比高达13.98,峰电流密度大于89kA/cm2;概述了交叉阵列的分子存储器的研究进展. 相似文献
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A remarkable threshold current density reduction (from 3.5 kA/cm/sup 2/ to 1.6 kA/cm/sup 2/) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.<> 相似文献
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Small area resonant tunneling diodes (RTDs) with strained Si0.4Ge0.6 potential barriers and a strained Si quantum well grown on a relaxed Si0.8Ge0.2 virtual substrate were fabricated and characterized. A room temperature peak current density (JP) of 282 kA/cm2 with a peak to valley current ratio (PVCR) of 2.43 were recorded for a 5×5 μm 2 sample, the highest values reported to date for Si/Si1-xGex RTDs. Scaling of the device size demonstrated a decrease in JP proportional to an increase in the lateral area of the tunnel junctions, whereas the PVCR remained approximately constant. This observation suggests that the dc behavior of such Si/Si1-xGex RTD design is presently limited by thermal effects 相似文献
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Degang Zhao Jing Yang Zongshun Liu Ping Chen Jianjun Zhu Desheng Jiang Yongsheng Shi Hai Wang Lihong Duan Liqun Zhang Hui Yang 《半导体学报》2017,38(5):051001-3
Two kinds of continuous-wave GaN-based ultraviolet laser diodes (LDs) operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition,with a 10×600 μm2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature. The stimulated emission peak wavelength of first LD is 392.9 nm,the threshold current density and voltage is 1.5 kA/cm2 and 5.0 V,respectively.The output light power is 80 mW under the 4.0 kA/cm2 injection current density. The stimulated emission peak wavelength of second LD is 381.9 nm,the threshold current density the voltage is 2.8 kA/cm2 and 5.5 V,respectively.The output light power is 14 mW under a 4.0 kA/cm2 injection current density. 相似文献
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A. Hierro J.M. Ulloa E. Calleja B. Damilano J. Barjon J.-Y. Duboz J. Massies 《Photonics Technology Letters, IEEE》2005,17(6):1142-1144
Room temperature lasing emission at 1.338 and 1.435 /spl mu/m with threshold current densities of 1518 and 1755 A/cm/sup 2/, respectively, is obtained in broad area GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy. The 1.338-/spl mu/m LDs show a power output per facet up to 0.20 W/A, a characteristic temperature (T/sub 0/) of 78 K, and an external transparency current density (J/sub tr/) of 0.77 kA/cm/sup 2/. Increasing the lasing wavelength to 1.435 /spl mu/m results in a larger J/sub tr/ of 1.16 kA/cm/sup 2/ and a lower T/sub 0/ of 62 K, due to larger nonradiative recombination. However, the 1.435-/spl mu/m LDs still display a power output per facet up to 0.15 W/A, and a high internal quantum efficiency of 52%. These improved performances are achieved without the need to use strain compensation layers, Sb as a surfactant during the quantum-well growth, or a postgrowth thermal anneal cycle. 相似文献
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M. Yamada T. Anan H. Hatakeyama K. Tokutome N. Suzuki T. Nakamura K. Nishi 《Photonics Technology Letters, IEEE》2005,17(5):950-952
Low-threshold operation was demonstrated for a 1.34-/spl mu/m vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm/sup 2/ at 1.34 /spl mu/m and 1.1 kA/cm/sup 2/ at 1.38 /spl mu/m, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 /spl mu/m at room temperature and operated up to 60/spl deg/C. 相似文献