Performance Comparisons Between Carbon Nanotubes, Optical, and Cu for Future High-Performance On-Chip Interconnect Applications

Optical interconnects and carbon nanotubes (CNTs) present promising options for replacing the existing Cu-based global/semiglobal (optics and CNT) and local (CNT) wires. We quantify the performance of these novel interconnects and compare it with Cu/low-kappa wires for future high-performance integrated circuits. We find that for a local wire, a CNT bundle exhibits a smaller latency than Cu for a given geometry. In addition, by leveraging the superior electromigration properties of CNT and optimizing its geometry, the latency advantage can be further amplified. For semiglobal and global wires, we compare both optical and CNT options with Cu in terms of latency, energy efficiency/power dissipation, and bandwidth density. The above trends are studied with technology node. In addition, for a future technology node, we compare the relationship between bandwidth density, power density, and latency, thus alluding to the latency and power penalty to achieve a given bandwidth density. Optical wires have the lowest latency and the highest possible bandwidth density using wavelength division multiplexing, whereas a CNT bundle has a lower latency than Cu. The power density comparison is highly switching activity (SA) dependent, with high SA favoring optics. At low SA, optics is only power efficient compared to CNT for a bandwidth density beyond a critical value. Finally, we also quantify the impact of improvement in optical and CNT technology on the above comparisons. A small monolithically integrated detector and modulator capacitance for optical interconnects (~10 fF) yields a superior power density and latency even at relatively lower SA (~20%) but at high bandwidth density. At lower bandwidth density and SA lower than 20%, an improvement in mean free path and packing density of CNT can render it most energy efficient.     

基于单壁碳纳米管束的三维互连线设计与分析

Metallic carbon nanotubes(CNTs) have been proposed as a promising alternative to Cu interconnects in future integrated circuits(ICs) for their remarkable conductive, mechanical and thermal properties. Compact equivalent circuit models for single-walled carbon nanotube(SWCNT) bundles are described, and the performance of SWCNT bundle interconnects is evaluated and compared with traditional Cu interconnects at different interconnect levels for through-silicon-via-based three dimensional(3D) ICs. It is shown that at a local level, CNT interconnects exhibit lower signal delay and smaller optimal wire size. At intermediate and global levels, the delay improvement becomes more significant with technology scaling and increasing wire lengths. For 1 mm intermediate and 10 mm global level interconnects, the delay of SWCNT bundles is only 49.49% and 52.82% that of the Cu wires, respectively.     

Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects

The crosstalk effects in single- and double-walled carbon-nanotube (SWCNT and DWCNT) bundle-interconnect architectures are investigated in this paper. Some modified equivalent-circuit models are proposed for both SWCNT and DWCNT bundles, where capacitive couplings between adjacent bundles are incorporated. These circuit models are further used to predict the performance of SWCNT and DWCNT bundle interconnects in comparison with the Cu wire counterpart at all interconnect levels for advanced future technology generations. It is found that, compared with the SWCNT bundle, the DWCNT bundle interconnect can lead to a reduction of crosstalk-induced time delay, which will be more significant with increasing bundle length, while the peak voltage of the crosstalk-induced glitch in SWCNT and DWCNT bundle interconnects is in the same order as that of Cu wires. Due to the improvement in time delay, it is numerically confirmed that the DWCNT bundle interconnect will be more suitable for the next generation of interconnect technology as compared with the SWCNT bundle counterpart.      

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Metallic carbon nanotubes (CNTs) have received much attention for their unique characteristics as a possible alternative to Cu interconnects in future ICs. Until this date, while almost all fabrication efforts have been directed toward multiwalled CNT (MWCNT) interconnects, there is a lack of MWCNT modeling work. This paper presents, for the first time, a detailed investigation of MWCNT-based interconnect performance. A compact equivalent circuit model of MWCNTs is presented for the first time, and the performance of MWCNT interconnects is evaluated and compared against traditional Cu interconnects, as well as Single-Walled CNT (SWCNT)-based interconnects, at different interconnect levels (local, intermediate, and global) for future technology nodes. It is shown that at the intermediate and global levels, MWCNT interconnects can achieve smaller signal delay than that of Cu interconnects, and the improvements become more significant with technology scaling and increasing wire lengths. At 1000- global or 500- intermediate level interconnects, the delay of MWCNT interconnects can reach as low as 15% of Cu interconnect delay. It is also shown that in order for SWCNT bundles to outperform MWCNT interconnects, dense and high metallic-fraction SWCNT bundles are necessary. On the other hand, since MWCNTs are easier to fabricate with less concern about the chirality and density control, they can be attractive for immediate use as horizontal wires in VLSI, including local, intermediate, and global level interconnects.     

Wafer-level package interconnect options

As integrated circuit technology enters the nanometer era, global interconnects are becoming a bottleneck for overall chip performance. In this paper, we show that wafer-level package interconnects are an effective alternative to conventional on-chip global wires. These interconnects behave as LC transmission lines and can be exploited for their near speed of light transmission and low attenuation characteristics. We compare performance measures such as bandwidth, bandwidth density, latency, and power consumption of the package-level transmission lines with conventional on-chip global interconnects for different International Technology Roadmap for Semiconductors (ITRS) technology nodes. Based on these results, we show that package-level interconnects are well suited for power demanding low-latency applications. We also analyze different interconnect options such as memory buses, long inter tile interconnects, clock, and power distribution.     

Measurement of Subnanosecond Delay Through Multiwall Carbon-Nanotube Local Interconnects in a CMOS Integrated Circuit

Due to their excellent electrical properties and small size, metallic carbon nanotubes (CNTs) are promising materials for interconnect wires in future integrated circuits. Indeed, simulations have firmly established CNTs as strong contenders for replacing or complementing copper interconnects. In this paper, we analyze the performances of a prototype 0.25-$muhbox{m}$ CMOS digital integrated circuit with select horizontal multiwall CNT (MWCNT) interconnects. Some local interconnect wires of the prototype chip were implemented, during a post-CMOS assembly process, by single 14-$muhbox{m}$ -long metallic MWCNT with 30-nm diameter, representative of future requirements for local interconnects. We evaluate the merits and challenges of MWCNT interconnects in a realistic silicon integrated-circuit environment. We experimentally extract the subnanosecond delays of these wires to quantitatively benchmark their future potential for the first time. Furthermore, we compare our experimental results with an existing MWCNT interconnect model, as well as with the expected performances of scaled copper wires. Finally, we discuss the origin of the discrepancies between our experimental results and the modeling projections.      

Mixed carbon nanotube bundles for interconnect applications

The increasing resistivity of copper with scaling and demands for higher current density are the driving forces behind the ongoing investigation for new wiring solutions for deep nanometer scale VLSI technologies. Metallic carbon nanotubes (CNTs) are promising candidates that can potentially address the challenges faced by copper, and thereby extend the lifetime of electrical interconnects. This article examines the state of the art in CNT applications with focus on CNT interconnect research. It is observed that individually, single-wall carbon nanotubes (SWCNTs) and multi-wall carbon nanotubes (MWCNTs) exhibit characteristics that can be better exploited when a combination of the two is used – in the form of a CNT bundle that plays a vital role in interconnect applications. The focus here is that the usage of a combination of SWCNT (at the centre area of the bundle) and MWCNT (on the outside) provides great performance boost with lower interaction and crosstalk between neighbouring CNT bundles. Simulation results show that the resistance, capacitance, and inductance of a CNT depend on the probability of metallic CNTs present in the bundle and the length of the nanotube. Because Cu is metallic, it indicates that using a higher number of metallic nanotubes in the bundle would aid the CNT bundle performance. In addition, using MWCNT on the outer periphery of the bundle and SWCNT in the centre of the bundle would be the ideal way to maximise the performance of the bundle. Based on the observations we provide an analysis of why a mixed CNT bundle would be highly suitable as interconnections.     

Global interconnect width and spacing optimization for latency, bandwidth and power dissipation

This paper addresses a novel methodology optimizing global interconnect width and spacing for International Technology Roadmap for Semiconductors technology nodes. Global interconnects with and without buffer insertion are considered. The effects of the width and spacing of global interconnects on performance, such as delay, bandwidth, total repeater area and energy dissipation, are analyzed. The product of delay and bandwidth is used as the figure of merit for simultaneous short latency and large bandwidth and the proposed methodology can optimize global interconnects for the maximal figure of merit. It is demonstrated that buffers should not be inserted in global interconnects if interconnect length is shorter than a critical length, which is a constant for a given technology. For global interconnects with buffer insertion, the optimal width and spacing have analytical expressions and are constants for a given technology. For global interconnects without buffer insertion, the optimal width and spacing are dependent on both the technology parameters and interconnect length and can be computed numerically.     

Analysis of read speed latency in 6T-SRAM cell using multi-layered graphene nanoribbon and cu based nano-interconnects for high performance memory circuit design

In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperature-dependent Cu and multilayered graphene nanoribbon (MLGNR)-based nano-interconnect materials is used throughout the circuit (primarily bit/bit-bars [red lines] and word lines [write lines]). Here, the read speed analysis is performed with four different chip operating temperatures (150K, 250K, 350K, and 450K) using both Cu and graphene nanoribbon (GNR) nano-interconnects with different interconnect lengths (from 10 μm to 100 μm), for reading-0 and reading-1 operations. To execute the reading operation, the CMOS technology, that is, the16-nm PTM-HPC model, and the16-nm interconnect technology, that is, ITRS-13, are used in this application. The complete design is simulated using TSPICE simulation tools (by Mentor Graphics). The read speed latency increases rapidly as interconnect length increases for both Cu and GNR interconnects. However, the Cu interconnect has three to six times more latency than the GNR. In addition, we observe that the reading speed latency for the GNR interconnect is ~10.29 ns for wide temperature variations (150K to 450K), whereas the reading speed latency for the Cu interconnect varies between ~32 ns and 65 ns for the same temperature ranges. The above analysis is useful for the design of next generation, high-speed memories using different nano-interconnect materials.     

A Novel Approach for Stability Analysis in Carbon Nanotube Interconnects

This letter introduces a new method for stability analysis of carbon nanotube (CNT) interconnects based on transmission line modeling and using the Nyquist stability criterion for the first time. Using this new method, the degree of relative stability for CNT bundle interconnects, versus the length of bundle and the diameter of each individual CNT, has been obtained. The obtained results show that with increasing the length of the CNT bundle and the diameter of each individual CNT interconnect, the relative stability increases, and the system becomes more stable.      

Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects

Graphene nanoribbons (GNRs) are considered as a prospective interconnect material. A comprehensive conductance and delay analysis of GNR interconnects is presented in this paper. Using a simple tight-binding model and the linear response Landauer formula, the conductance model of GNR is derived. Several GNR structures are examined, and the conductance among them and other interconnect materials [e.g., copper (Cu), tungsten (W), and carbon nanotubes (CNTs)] is compared. The impact of different model parameters (i.e., bandgap, mean free path, Fermi level, and edge specularity) on the conductance is discussed. Both global and local GNR interconnect delays are analyzed using an RLC equivalent circuit model. Intercalation doping for multilayer GNRs is proposed, and it is shown that in order to match (or better) the performance of Cu or CNT bundles at either the global or local level, multiple zigzag-edged GNR layers along with proper intercalation doping must be used and near-specular nanoribbon edge should be achieved. However, intercalation-doped multilayer zigzag GNRs can have better performance than that of W, implying possible application as local interconnects in some cases. Thus, this paper identifies the on-chip interconnect domains where GNRs can be employed and provides valuable insights into the process technology development for GNR interconnects.      

Packaging of copper/low-k IC devices: a novel direct fine pitch gold wirebond ball interconnects onto copper/low-k terminal pads

The trend toward finer pitch and higher performance devices has driven the semiconductor industry to incorporate copper and low-k dielectric materials. Compared to the commonly used aluminum metallization scheme on the traditional silicon dioxide and/or silicon nitride passivation, a Cu/low-k combination offers higher on-chip communication speed and a lower overall device cost. However, the process of packaging Cu/low-k devices has been proven to be difficult, relying either on additional lithography and deposition steps or on costly new process tools. Thus, this paper presents a novel methodology to bond fine pitch Au wire directly onto the Cu/low-k pad structure using the industry standard tool set. A Cu/low-k test vehicle is designed with the required slotted low-k fillings for dual damascene chemical mechanical polishing (CMP) process need. In addition, a thin organic passivation film is developed for coating the exposed Cu/low-k pad temporarily from copper oxidation and to provide a wirebondable surface to form the proper interconnects. A design of experiment is performed to optimize wirebonding parameters [power, time, and ultrasonic gauge (USG) bleed], along with key physical contributors from wafer sawing and die attaching steps that impact the interconnect shear strength and quality. In addition, electrical and optical characterization and surface failure analysis are performed to confirm the feasibility of the technology. Finally, reliability results of the pad structure design and recommendations for further process optimization are presented.     

Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems

Using physics-based circuit models, the performances of carbon nanotube (CNT) interconnects, both single- and multiwall (SWNT and MWNT), are benchmarked against their copper counterparts at a realistic operating temperature (100degC). The models used capture various electron phonon scattering mechanisms and the dependence of quantum conductance on temperature and diameter. It is demonstrated that any performance comparison between CNT and copper wires needs to be done at realistic temperatures because changes in temperature affect copper and CNT interconnects quite differently. The results of this paper demonstrate that a hybrid system of copper/SWNT/MWNT offers the highest performance enhancement for interconnects.     

Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects

This paper reviews the current state of research in carbon-based nanomaterials, particularly the one-dimensional (1-D) forms, carbon nanotubes (CNTs) and graphene nanoribbons (GNRs), whose promising electrical, thermal, and mechanical properties make them attractive candidates for next-generation integrated circuit (IC) applications. After summarizing the basic physics of these materials, the state of the art of their interconnect-related fabrication and modeling efforts is reviewed. Both electrical and thermal modeling and performance analysis for various CNT- and GNR-based interconnects are presented and compared with conventional interconnect materials to provide guidelines for their prospective applications. It is shown that single-walled, double-walled, and multiwalled CNTs can provide better performance than that of Cu. However, in order to make GNR interconnects comparable with Cu or CNT interconnects, both intercalation doping and high edge-specularity must be achieved. Thermal analysis of CNTs shows significant advantages in tall vias, indicating their promising application as through-silicon vias in 3-D ICs. In addition to on-chip interconnects, various applications exploiting the low-dimensional properties of these nanomaterials are discussed. These include chip-to-packaging interconnects as well as passive devices for future generations of IC technology. Specifically, the small form factor of CNTs and reduced skin effect in CNT interconnects have significant implications for the design of on-chip capacitors and inductors, respectively.      

Interconnects for nanoscale MOSFET technology: a review

In this paper,a review of Cu/low-k,carbon nanotube(CNT),graphene nanoribbon(GNR)and optical based interconnect technologies has been done,Interconnect models,challenges and solutions have also been discussed.Of all the four technologies,CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies,despite some minor drawbacks.It is concluded that beyond 32nm technology,a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.     

Computer Systems Based on Silicon Photonic Interconnects

We present a computing microsystem that uniquely leverages the bandwidth, density, and latency advantages of silicon photonic interconnect to enable highly compact supercomputer-scale systems. We describe and justify single-node and multinode systems interconnected with wavelength-routed optical links, quantify their benefits vis-a-vis electrically connected systems, analyze the constituent optical component and system requirements, and provide an overview of the critical technologies needed to fulfill this system vision. This vision calls for more than a hundredfold reduction in energy to communicate an optical bit of information. We explore the power dissipation of a photonic link, suggest a roadmap to lower the energy-per-bit of silicon photonic interconnects, and identify the challenges that will be faced by device and circuit designers towards this goal.     

多层空气隙Cu互连结构耦合电容的优化

随着超大规模集成电路特征尺寸不断缩小,多层cu互连之间的RC延迟成为一个越来越严重的问题.由于低介电常数(low-k)材料配合空气隙(air gap)结构可用于降低Cu互连导线间的耦合电容从而改善RC延迟特性,建立了单层和多层空气隙Cu互连结构的有限元分析模型,以研究空气隙结构尺寸与互连介质等效介电常数的关系.结果表明,在单层空气隙Cu互连结构中,通过增加互连导线间空气隙的结构尺寸可以减小Cu互连结构中的耦合电容,进而改善RC延迟特性;在多层空气隙Cu互连结构中,通过改变IMD和ILD中空气隙的尺寸结构可以得到RC延迟性能优化的多层空气隙Cu互连结构.     

Global (interconnect) warming

This article presents a comprehensive analysis of the thermal effects in advanced high-performance VLSI interconnect systems arising due to self-heating under various circuit conditions, including electrostatic discharge (ESD). Technology (Cu, low-k, etc.) and scaling effects on the thermal characteristics of the interconnects, and on their electromigration (EM) reliability, have been analyzed simultaneously, which have important implications for providing robust and aggressive deep sub-micron (DSM) interconnect design guidelines. The analysis takes into account the effects of increasing interconnect (Cu) resistivity with decreasing line dimensions and the effect of a finite barrier metal thickness. Furthermore, the impact of these thermal effects on the design (driver sizing) and optimization of the interconnect length between repeaters at the global-tier signal lines are investigated. Finally, the reliability implications for minimum-sized vias in optimally buffered signal nets will also be quantified     

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

The interface quality and reliability issues have shown significant importance in Cu/organic low-k damascene integration. In this letter, a post-etch in-line electron beam (E-beam) treatment was used to modify the interface properties of sidewall barrier/organic low-k dielectric without impairing either the film properties or the dielectric constant. X-ray photoelectron spectroscopy (XPS) analysis indicated that oxygen content at the low-k surface, which mostly came from oxygen/moisture intake from ambient during process, was eliminated by E-beam exposure and subsequent rapid thermal annealing. As a result, Cu/organic low-k interconnects exhibited a lower line-to-line leakage current and a higher breakdown strength. The interconnect structures, after this in-line E-beam treatment process, also showed a good reliability performance against thermal stress, with good leakage current characteristics after a 500-h burn-in at 200/spl deg/C.     

Design of an Interconnect Architecture and Signaling Technology for Parallelism in Communication

The need for efficient interconnect architectures beyond the conventional time-division multiplexing (TDM) protocol-based interconnects has been brought on by the continued increase of required communication bandwidth and concurrency of small-scale digital systems. To improve the overall system performance without increasing communication resources and complexity, this paper presents a cost-effective interconnect architecture, communication protocol, and signaling technology that exploits parallelism in board-level communication, resulting in shorter latency and higher concurrency on a shared bus or link: the proposed source synchronous CDMA interconnect (SSCDMA-I) enables dual concurrent transactions on a single wire line as well as flexible input/output (I/O) reconfiguration. The SSCDMA-I utilizes 2-bit orthogonal CDMA coding and a variation of source synchronous clocking for multilevel superposition; a single 3-level SSCDMA-I line operates as if it consists of dual virtual time-multiplexed interconnects, which exploits communication parallelism with a reduced number of pins, wires, and complexity. The unique multiple access capability of the SSCDMA-I improves real-time communication between multiple semiconductor intellectual property (IP) blocks on a shared link or bus by reducing the bus contention interference from simultaneous traffic requests and by taking advantage of shorter request latency. The prototype transceiver chip is implemented in 0.18-m CMOS and the 10-cm test PC board system achieves an aggregate data rate of 2.5 Gb/s/pin between four off-chip (2Tx-to-2Rx) I/Os.