Deposition and photoluminescence of sol–gel derived Tb:Zn2SiO4 films on SiO2/Si

Tb³⁺ doped Zn₂SiO₄ films have been deposited on SiO₂ buffered Si wafers by sol–gel method. The structures of these films have been investigated with X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The results revealed that these films were composed of nanometer-size grains with a Willemite structure and had smooth surfaces. Photoluminescence measurements of the films showed a strong emission from ⁵D₄ to ⁷F₅ at 544 nm. The blue emission from ⁵D₃–⁷F_j was depressed because of cross-relaxation effect. The decay kinetics of the ⁵D₄–⁷F₅ green emission was studied and a best fitting was obtained by a double exponential function. The lifetime of the excited ⁵D₄ state is estimated to be 5.2 ms.     

High piezoelectric d33 coefficient of lead-free (Ba0.93Ca0.07)(Ti0.95Zr0.05)O3 ceramics sintered at optimal temperature

Lead-free (Ba_0.93Ca_0.07)(Ti_0.95Zr_0.05)O₃ (BCZT) ceramics were prepared using a solid-state reaction technique. The structure and electrical properties were investigated with a special emphasis on the influence of sintering temperature. Crystalline structures and microstructures were analyzed by X-ray diffraction and scanning electron microscope (SEM) at room temperature. The BCZT ceramics sintered at 1450 °C show the highest densification and exhibit excellent piezoelectric properties of high piezoelectric coefficient d₃₃ = 387 pC/N, planar mode electromechanical coupling coefficient k_p = 44.2%, mechanical quality factor Q_m = 140 and Curie temperature T_c = 108 °C.     

Effect of CeO2 addition on structure and electrical properties of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics prepared by citric method

(Na_0.5Bi_0.5)_0.93Ba_0.07TiO₃ ceramics added with 0–0.8 wt.% CeO₂ were prepared by a citrate method, and the influence of the CeO₂ addition on the structure and electrical properties was investigated. The specimens containing various amounts of CeO₂ show the coexistence of rhombohedral and tetragonal phases, with the relative content of the tetragonal phases gradually enhancing with increasing amount of CeO₂. Compared with (Na_0.5Bi_0.5)_0.93Ba_0.07TiO₃, the specimen added with a small amount of CeO₂ (≤0.2 wt.%) display a slightly improved electromechanical coupling factor (k_p) and piezoelectric constant (d₃₃) in conjunction with a reduced dielectric loss (tg δ) and an enhanced mechanical quality factor (Q_m), while higher CeO₂ amounts led to a rapid deterioration of the piezoelectric and ferroelectric properties. The variation of the electrical properties with the CeO₂ addition was tentatively interpreted with respect to doping effect, crystal-structural evolution and stability of ferroelectric domains.     

Enhanced photoluminescence of Gd0.94(P1−xVx)O4:Eu0.06 red-emitting (0 ≤ x ≤ 1.0) phosphors

High-quality Gd_0.94(P_1−xV_x)O₄:Eu_0.06 (0 ≤ x ≤ 1.0) powders having small size, spherical morphology, smooth surface, and nonaggregation are synthesized by the ultrasonic spray pyrolysis. The complex host composition, Gd_0.94(P_1−xV_x)O₄:Eu_0.06 (x ≥ 0.5), shows a single phase with the tetragonal xenotime structure. The introduction of V⁵⁺ ions in the P⁵⁺ lattice yields the deviation from the centrosymmetry of Eu³⁺ ions. By increasing the V⁵⁺ content, the emission intensity corresponding to the ⁵D₀ → ⁷F₁ transition decreases. On the other hand, the emission intensity corresponding to the ⁵D₀ → ⁷F₂ transition increases up to x = 0.5, and then decreases upon further increasing the V⁵⁺ content. The emission intensity, peaking at 620 nm, of complex composition Gd_0.94(P_0.5V_0.5)O₄:Eu_0.06 is approximately five and two times stronger than that of the Gd_0.94PO₄:Eu_0.06 and Gd_0.94VO₄:Eu_0.06, respectively. It is believed that the introduction of the complex composition Gd_0.94(P_1−xV_x)O₄:Eu_0.06 is highly effective for improving the emission properties.     

Comparisons on the properties of (Zn1-xCox)2-W type barium hexaferrite thin films prepared on the Si (100) and (111) substrates

The (Zn_1-xCo_x)₂-W type barium hexaferrite thin films have been prepared by a radio frequency magnetron sputtering method on the Si (100) and the Si (111) substrates respectively. With increasing the annealing temperatures (800, 850, 900, 950, and 1000 °C), the Ba(CoZn)₂Fe₁₆O₂₇ phases emerge from the amorphous matrix. The hexaferrite thin films on Si (111) substrates have a larger saturation magnetic field (636.6 kA/m) than those on Si (100) substrates (159.1 kA/m). The magnetic hysteresis measurements show that they exhibit an isotropic behavior for thin films deposited on both substrates. Films on the Si (111) substrates are magnetically harder than those on the Si (100) substrates.     

Time dependent preferential sputtering in the HfO2 layer on Si(100)

The time dependent preferential sputtering in the HfO₂ layer on Si(100) has been investigated in-situ with X-ray photoelectron spectroscopy during Ar ion sputtering. Hf4f, O1s, and Si2p spectra show that three bonding environments (Hf⁰⁺ from the Hf metal, Hf²⁺ from HfO, and Hf⁴⁺ from HfO₂) co-exist inside the HfO₂ layer during sputtering. The Hf⁴⁺ doublet decreases with sputtering time in an exponential-like function. Both Hf⁰⁺ and Hf²⁺ doublets increase with sputtering time in opposite ways. Two concurrent sputtering mechanisms characterizing the formation of HfO and Hf due to preferential sputtering of oxygen within the HfO₂ layer can well explain the detailed bond breaking and re-formation process. The Hf metal is the final product and the HfO is an intermediate product during sputtering under vacuum. The HfO cannot be removed and acts as a residual component in the HfO₂ layer.     

Synthesis and photoluminescence properties of Yb doped Ba5(PO4)3Cl phosphor for white light-emitting diodes

Yb²⁺ ion doped Ba₅(PO₄)₃Cl phosphor was synthesized by solid state reaction. Four distinct absorption bands were observed in the Ultraviolet (UV) light region due to the electronic transitions of Yb²⁺ ion from ¹S₀ ground state to ²F_5/2(t_2g), ²F_5/2(e_g), ²F_7/2(t_2g), and ²F_7/2(e_g) excited states. The main emission wavelength of the phosphor was around 630 nm. The optimized Yb²⁺ ion concentration was 0.2 mol% (λ_exc. = 400 nm). The calculated critical distance was about 8.729 Å and the concentration quenching was observed above 0.2 mol% due to the electric dipole–dipole interaction.     

Low-temperature sintering of (Zn0.8 Mg0.2)2SiO4-TiO2 ceramics

Effect of Li₂O-B₂O₃-SiO₂ (LBS) glass on the sintering behavior and the microwave dielectric properties of (Zn_0.8 Mg_0.2)₂SiO₄-TiO₂ (ZMST) ceramics were investigated. The Li₂O-B₂O₃-SiO₂ glass lowered the sintering temperature of ZMST ceramics effectively from 1250 to 870 °C. The unknown second phase, which was formed in the ZMST ceramics increased with the addition of LBS glass. With increasing the LBS glass content, the bulk density, dielectric constant (ε_r) and the maximum Q × f value decreased, and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value. (Zn_0.8 Mg_0.2)₂SiO₄-TiO₂ ceramics with 3 wt.% Li₂O-B₂O₃-SiO₂ glass sintered at 870 °C for 2 h shows excellent dielectric properties: ε_r = 8.48, Q × f = 11500 GHz, and τ_f = 0 ppm/°C.     

VUV photoluminescence of green-emitting GdPO4:Tb,M (M: Al,Zn) synthesized by ultrasonic spray pyrolysis

We successfully synthesized (Gd_0.94−xTb_0.06M_x)PO₄ (M: Al and Zn; 0 ≤ x ≤ 0.06) green phosphors by ultrasonic spray pyrolysis and investigated their photoluminescence characteristics. The synthesized (Gd_0.94−xTb_0.06M_x)PO₄ phosphor powders showed a spherical morphology and a smooth surface. The phosphors emitted a green light due to the transition from ⁵D₄ to ⁷F_j of Tb³⁺ (j = 3–6) at 489, 544, 585, and 621 nm, respectively. The partial incorporation of Al or Zn for Gd up to x = 0.45 in (Gd_0.94Tb_0.06)PO₄ phosphors yielded a significant rise in the emission intensity. The (Gd_0.895Tb_0.06Al_0.045)PO₄ and (Gd_0.895Tb_0.06Zn_0.045)PO₄ phosphors showed 31 and 13% stronger emission intensity at 544 nm, respectively, compared to (Gd_0.94Tb_0.06)PO₄ phosphor.     

Time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells

Room temperature time-resolved photoluminescence (TR-PL) measurements have been performed on Cu(In,Ga)Se₂ (CIGS) thin films and solar cells to clarify the recombination process of the photo-generated minority carrier. Both films and solar cells exhibited PL decay curves composed of the dominant fast (0.7-2 ns) and weak slow (3-10 ns) exponential decay curves. PL lifetime of the cell is longer than that of the thin films, indicating the longer minority carrier lifetime for the hetero-structures than in thin films. The increase of PL lifetime is consistent with the enhancement of the PL intensity and the elimination of defect-related PL as a result of the solar cell formation. These results are discussed in terms of the recombination process of carriers in films and hetero-structures. The relationship between the PL lifetime of the CIGS solar cells and the cell conversion efficiency is described.     

Characterizations of ferromagnetic Zn1−xCoxO thin films grown on Al2O3 (0001) by reactive radio-frequency magnetron sputtering coupled with post-growth annealing

High-quality ferromagnetic Zn_1−xCo_xO thin films were deposited on a sapphire (0001) substrate at 600 °C by using reactive radio-frequency magnetron sputtering coupled with post-annealing treatment for 1 h at 580 °C under an Ar atmosphere. High resolution X-ray diffraction patterns show that hexagonal wurzite crystal structures of undoped ZnO film were maintained even after Co doping up to 4.5 at.% without forming Co clusters or oxides. X-ray photoelectron spectroscopy spectra represent the energy difference of 15.42 eV between Co2p_3/2 and Co2p_1/2, which is different from 15.05 eV of Co clusters. The characteristic absorption bands near 658, 616, and 568 nm wavelengths out of UV-VIS-IR spectroscopy spectra are correlated with the d-d transitions of tetrahedrally coordinated Co²⁺ ions. The low temperature photoluminescence spectrum for undoped ZnO shows a strong near-band edge (NBE) emission peak of 3.42 eV without deep level emission peaks. But, Co content increases in Zn_1−xCo_xO film, the NBE emission peak intensity decreases and another emission peak at 3.37 eV as well as a broad green emission peak at around 2.5 eV starts to appear with larger intensity due to the more actively creating oxygen vacancies. The emission peak at 3.37 eV proves the interaction between Co ions and the hydrogenic electrons in the impurity band and also supports the typical ferromagnetic hysteresis curves obtained by superconducting quantum interface device magnetometry at 300 K for Zn_1−xCo_xO films. High insulator characteristics are observed for as-grown Zn_1−xCo_xO films whereas it exhibits n-type characteristics with the increased carrier concentration, mobility, and resistivity after post-growth annealing. The spintronic devices could be fabricated with the utilization of Zn_1−xCo_xO films grown by the economically feasible reactive radio-frequency magnetron sputtering coupled with the post annealing treatment.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on In2O3 layer deposited on Si (111) substrates

GaN nanorods were synthesized by ammoniating Ga₂O₃/In₂O₃ thin films deposited on Si (111) with magnetron sputtering. X-ray diffraction, Scanning electronic microscope and high-resolution TEM results show that they are GaN single crystals, the sizes of which vary from 2 to 7 μm in length and 200 to 300 nm in diameter. In₂O₃ middle layer plays an important role in the GaN nanorod growth.     

Effects of p(O2) and p(CO2) on epitaxial growth of BaTiO3 thin films on MgO(100) substrates by using metal organic acid salts

BaTiO₃ thin films were prepared by using metal organic acid salts on MgO(100) substrates, which have large lattice-misfit with BaTiO₃. Amorphous films prefired at 470°C were crystallized to BaTiO₃ phase by heat treatment at higher temperature. Crystallinity and in-plane alignment of the prepared films were found to depend on the heat-treatment conditions. BaTiO₃ films with high crystallinity but poor (100)-orientation were obtained in air at higher than 1200°C. Whereas, (100)-oriented epitaxial BaTiO₃ film was fabricated by annealing at 900°C under low oxygen partial pressure (p(O₂)). Low carbon dioxide partial pressure (p(CO₂)) is also found to be essential for preparation of epitaxial BaTiO₃ films on MgO substrates by using metal organic acid salts.     

Zn0.4(CuGa)0.3Ga2S4/CdS光催化材料的制备及其CO2还原性能

利用光催化技术将CO2转化为燃料有望解决能源危机和温室效应.Zn1–2x(CuGa)xGa2S4具有可见光响应及较高的导带电势,从热力学角度上看是较为理想的CO2还原材料,但是其光催化CO2还原活性仍然较低,亟待从动力学角度提高其活性.本研究采用Zn0.4(CuGa)0.3Ga2S4与不同比例的CdS纳米颗粒复合,制备...     

The synthesis and selected properties of new compounds: Mg3Fe4(VO4)6 and Zn3Fe4(VO4)6

New compounds: Mg₃Fe₄(VO₄)₆ and Zn₃Fe₄(VO₄)₆ were obtained from a solid state reaction. The temperatures of melting of Mg₃Fe₄(VO₄)₆ and Zn₃Fe₄(VO₄)₆ amount to 950±5 and 850±5°C, respectively. The indexing results and the calculated unit cell parameters for both compounds are given and suggest that both phases are isotypic with Mn₃Fe₄(VO₄)₆. The IR spectra of the above-mentioned compounds are presented.     

Dielectric, electrical and magnetoelectric characterization of (x)Ni0.8Zn0.2Fe2O4 + (1 − x)Pb0.93La0.07(Zr0.60Ti0.40)O3 composites

The structural, electrical, dielectric, magnetic and magnetoelectric properties of (x)Ni_0.8Zn_0.2Fe₂O₄ + (1 − x)Pb_0.93La_0.07(Zr_0.60Ti_0.40)O₃ (x = 0, 0.15, 0.30, 0.45 and 1) have been studied by means of various experimental techniques. Polycrystalline samples of this series have been prepared by the double sintering ceramic method. X-ray diffraction data analysis revealed purity of the composites. Microstructural analysis using scanning electron microscopy mode depicts the presence of two phases in contact with each other. Dielectric properties were studied at and well above room temperature. Temperature dependent variation of the dielectric constant show diffused phase transition which can be well described by fitting the Lorentz-type relation, . Observation of well-saturated ferroelectric hysteresis loop and magnetic hysteresis loop for composites indicates that ferroelectric and magnetic ordering exist simultaneously at room temperature. The static value of magneto electric voltage coefficient (α_E) has been studied as a function of magnetic field at room temperature for all the composites. The maximum value of α_E is 7.53 mV/(cm Oe) for 85% PLZT-15% NZFO composites.     

Ti2Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al2O3 (0001) substrates

Titanium nitride TiN_x (0.1 ≤ x ≤ 1) thin films were deposited onto Al₂O₃(0001) substrates using reactive magnetron sputtering at substrate temperatures (T_s) ranging from 800 to 1000 °C and N₂ partial pressures (pN₂) between 13.3 and 133 mPa. It is found that Al and O from the substrates diffuse into the substoichiometric TiN_x films during deposition. Solid-state reactions between the film and substrate result in the formation of Ti₂O and Ti₃Al domains at low N₂ partial pressures, while for increasing pN₂, the Ti₂AlN MAX phase nucleates and grows together with TiN_x. Depositions at increasingly stoichiometric conditions result in a decreasing incorporation of substrate species into the growing film. Eventually, a stoichiometric deposition gives a stable TiN(111) || Al₂O₃(0001) structure without the incorporation of substrate species. Growth at T_s 1000 °C yields Ti₂AlN(0001), leading to a reduced incorporation of substrate species compared to films grown at 900 °C, which contain also Ti₂AlN(101?3) grains. Finally, the Ti₂AlN domains incorporate O, likely on the N site, such that a MAX phase oxynitride Ti₂Al(O,N) is formed. The results were obtained by a combination of structural methods, including X-ray diffraction and (scanning) transmission electron microscopy, together with spectroscopy methods, which comprise elastic recoil detection analysis, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy.     

Structure distortion of Zn4O13C24H12 framework (MOF-5)

Zn₄O₁₃C₂₄H₁₂ framework (MOF-5) can occupy either cubic or tetragonal structure. It was recognized that the tetragonal MOF-5 was a distorted cubic MOF-5 caused by filling effect of ZnO or solvent. However, herein, it was found that the ZnO and solvent inside the pores of the framework did not cause the distortion of cubic MOF-5. Furthermore, the distortion is strongly dependent on the solvent vacuumed to dry the framework. If the vacuumed solvent was dimethylformamide (DMF), the crystal structure of MOF-5 was tetragonal. In contrast, if DMF was displaced by CH₂Cl₂ before the vacuum, the obtained MOF-5 occupied a perfect cubic structure. The thermal decomposition of cubic and tetragonal MOF-5s produced the same products: CO₂, benzene, amorphous carbon, and crystal ZnO. However, the thermal decomposition of cubic MOF-5 requires a higher temperature than the tetragonal one, indicating that cubic MOF-5 is more stable than the tetragonal one.     

Development of perovskite in Fe-substituted Pb(Zn1/3Ta2/3)O3 and dielectric characteristics

Pb(Zn_1/3Ta_2/3)O₃ ceramics, compositionally modified by the incorporation of Fe to the octahedral lattice sites, were prepared and characterized in terms of perovskite development, dielectric properties, as well as microstructure evolution. The powders of the B-site precursor compositions were synthesized separately and reacted with PbO to form Pb[(Zn_1/3Ta_2/3),(Fe_1/2Ta_1/2)]O₃. The perovskite contents increased continuously with the Fe concentration. The maximum dielectric constant values of the ceramics increased tremendously with the fraction of Fe, whereas the dielectric maximum temperatures were rather insensitive to the compositional change.     

Raman spectroscopy and cathodoluminescence characteristics of order-disorder Ba(Zn1/3Ta2/3)O3 ceramics

The order-disorder transition in Ba(Zn_1/3Ta_2/3)O₃ (BZT) was characterized by using Raman spectroscopy, transmission electron microscopy (TEM), and cathodoluminescence (CL) microscopy. The 1:2 ordered structure of pure BZT ceramics was replaced by a 1:1 ordered structure at 1650 °C and the 1:1 ordered structure of BZT sintered at 1650 °C exhibited a 1:2 ordered structure when it was reannealed at 1500 °C for 12 h. The A_1g lines in the Raman spectrum of the sintered and reannealed samples were shifted to lower and higher wavenumbers, respectively. From the CL analysis, the 1:1 ordered BZT exhibited mainly three emission bands at around 533.2 (2.32 eV), 599.1 (2.07 eV), and 682.1 nm (1.81 eV), whereas the 1:2 ordered BZT exhibited mainly five bands at 346.4 (3.58 eV), 427.5 (2.90 eV), 520.9 (2.38 eV), 593.0 (2.09 eV), and 678.9 nm (1.82 eV). The strongest band originating from 2.32 to 2.38 eV was broadened, and the band center shifted towards a higher and lower wavelength in the 1:1 and 1:2 ordered BZT, respectively. Additional bands at around 346 and 427 nm in the grain interior of the annealed sample were strongly related to the 1:2 ordering of BZT.