一种电流失配自适应补偿宽带锁相环设计

针对宽带自偏置锁相环(PLL)中存在严重的电荷泵电流失配问题,提出了一种电流失配自适应补偿自偏置锁相环。锁相环通过放大并提取参考时钟与反馈时钟的锁定相位误差脉冲,利用误差脉冲作为误差判决电路的控制时钟,通过逐次逼近方法自适应控制补偿电流的大小,逐渐减小鉴相误差,从而减小了锁相环输出时钟信号抖动。锁相环基于40 nm CMOS工艺进行设计,后仿真结果表明,当输出时钟频率为5 GHz时,电荷泵输出噪声从-115.7 dBc/Hz@1 MHz降低至-117.7 dBc/Hz@1 MHz,均方根抖动从4.6 ps降低至1.6 ps,峰峰值抖动从10.3 ps降低至4.7 ps。锁相环输出时钟频率为2～5 GHz时,补偿电路具有良好的补偿效果。     

DC-DC变换器中CMOS电荷泵锁相环的设计

针对电荷泵锁相环的抖动问题,对CMOS电荷泵锁相环的压控振荡器电路进行改进;设计了一种采用增益补偿技术的压控振荡器,实现了可用于DC-DC变换器中与外部时钟同步的电荷泵锁相环.电路设计基于TSMC 0.18 μm CMOS工艺,采用HSPICE软件仿真验证.仿真结果表明,在3.3 V电源电压、-40 ℃～85 ℃温度范围内,该电荷泵锁相环能够与外部时钟同步于1.5 ～3.5 MHz的频率范围,锁定时间小于72 μs,功耗小于1.3 mW.     

一种基于电荷泵锁相环的时钟调节电路设计

设计了一种基于电荷泵锁相环(PLL)的独特时钟调节电路,可调节时钟频率和延时,可纠正时钟偏斜,能够输出不同相位(0°,90°,180°,270°)锁定且低抖动的各种频率信号,锁相环可外部动态配置。该电路可应用于FPGA系统集成电路的时钟发生源电路中,能够提供非常灵活的时钟调节功能。仿真结果表明,该电路满足设计需求。     

新型低压、高速CMOS电荷泵电路

针对电荷泵传统电路中存在的电荷注入、时钟馈通、电荷分享等现象、问题,提出了相应的解决措施,并且提出了一种新型的电荷泵电路。电路按0．18μCMOS工艺设计,Spectre仿真,可以工作在1V电源电压下,频率达到1GHz,输出电压范围为100～980mV,功耗130μW,输出波形连贯无跳跃。该电荷泵具有结构简单、低压低功耗的特性,适合高速锁相环电路的使用。     

低抖动的480 MHz CMOS电荷泵式锁相环

本文设计了一款用于USB2.0时钟发生作用的低抖动、低功耗电荷泵式锁相环电路。其电路结构包含鉴频/鉴相器、电荷泵、环路滤波器、压控振荡器和分频器。电路设计是基于CSM0.18μmCMOS工艺,经HSPICE仿真表明,锁相环输出480MHz时钟的峰峰值抖动仅为5.01ps,功耗仅为8.3mW。     

一种高速低过冲电荷泵电路的设计

为了有效降低传统电荷泵电路的充放电过冲电流,提高电荷泵输出控制电压的稳定性,提出、设计并实现了一种高速低过冲的电荷泵结构,该电路适用于高速锁相环及时钟数据恢复电路.电路在电源电压为1.2 V的0.13 μm CMOS工艺下设计实现,并对版图数据进行了HSPICE模拟,其结果表明,电路在2.5 GHz的速度下能很好的工作,同时电流过冲相比传统电荷泵下降了70%.     

3 GHz低杂散锁相环中的低失配电荷泵

基于SMIC 40 nm CMOS工艺,提出了一种改进型电荷泵电路。在传统电荷泵锁相环中,电荷泵存在较大的电流失配,导致锁相环产生参考杂散,使锁相环输出噪声性能恶化。设计的电荷泵电路在电流源处引入反馈,降低了电流失配。仿真结果表明,在供电电压为1.1 V,电荷泵充放电电流为0.1 mA,输出电压在0.3~0.7 V范围变化时,电荷泵的电流失配率小于0.83 %,锁相环的输出参考杂散为-65.5 dBc。     

视频处理器中电荷泵锁相环设计

为产生一个与视频信号中的行同步信号严格同步的时钟信号,设计了一种数模混合结构的电荷泵锁相环(PLL)电路。通过对锁相环电路中鉴频鉴相器、电荷泵电路、振荡器电路设计适当改进,实现了性能稳定的时钟信号。采用中芯国际公司的0.35μm 2P4M双层多晶硅四层金属3.3 V标准CMOS工艺,使用Simulink软件进行了系统级仿真、Spectre软件进行了电路级仿真、Hsim软件进行了混合仿真。结果表明,环路输出频率27 MHz时钟信号,占空比达到50.141%,输入最大2 Gbit/s像素信号条件下,时钟抖动小于350 ps,锁定时间小于30μs,芯片的工作达到设计要求。     

锁相环中的充电泵电路的研究

针对消除传统电荷泵电路存在的MOS开关的电荷注入效应,时钟馈通效应,电荷泄露和充放电电流失配等产生的锁相环的相位偏差问题,设计了两种新型的电荷泵电路.这两种电路的设计和仿真采用了0.6 μm CMOS工艺,电源电压为5 V,功耗分别为0.65 mW和0.7 mW.仿真结果表明,两种新型电荷泵电路的转换速度得到了提高,输出电压近似于电源电压到地的全摆幅并具有稳定的充放电步长,可用于高速锁相环电路.     

一种适用于NRZ数据的时钟数据恢复电路

提出了一种基于传统电荷泵锁相环结构的时钟数据恢复电路.采用一种适用于NRZ数据的新型鉴频鉴相器电路,以克服传统鉴频鉴相器在恢复NRZ信号时出现错误脉冲的问题,从而准确地恢复出NRZ数据.同时,对其他电路也采用优化的结构,以提高时钟数据恢复电路的性能.设计的电路可在1.1 V超低电压下工作,适合RF ID等需要低电压、低功耗的系统使用.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.