共查询到20条相似文献,搜索用时 15 毫秒
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在激光的传输光路中加入掩模板,采用纳秒脉冲激光对水下靶材进行了掩模微细刻蚀加工,与飞秒激光微细加工相比可显著提高加工效率,加工精度由掩模保证.在所构建的试验系统中,分别在空气中、纯水中和盐溶液中进行了加工试验,在水流的作用下,激光辐照的多余热量被带走,加工边缘热影响区明显减小.同时,水下激光辐照还会在加工区域造成光学击穿,产生等离子体冲击波,在水层的约束限制作用下,加工表现出了明显的冲击波力学效应.通过这种热-力学的复合效应,使金属材料表面产生材料去除和变形的加工效果.最终在质量分数为15%的NaNO3的溶液中,利用热-力学效应和化学反应的复合作用,实现了线宽120μm左右、热影响区小、成形精度较好的微细刻蚀加工. 相似文献
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高压纳秒放电脉冲参量的计算 总被引:1,自引:0,他引:1
根据等效放电回路、火花电阻公式以及巴邢定律,推导出了高压纳秒脉冲参量(脉冲幅值、半高宽)与储能电容、放电管管内气压以及管内电极间距之间关系的解析式。公式与实验能较好地吻合。 相似文献
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本文设计制作了基于铝基衬底的微沟道阵列器件,并研究了纳秒脉冲微沟道等离子体放电特性。通过调控纳秒脉冲输出波形,获得了脉冲参数对微沟道等离子体放电特性的影响规律。结果表明,相比于传统的正弦波驱动,纳秒脉冲微沟道等离子体放电更集中,耦合效应更明显,且等离子体特性更易于调控。当改变脉冲参数时,6%左右的波形过冲电压会造成微沟道等离子体放电强度~30%的改变。另外,脉冲上升沿时间越短,放电强度越高,当上升沿时间由152 ns缩短至32 ns时,放电强度可提升~30%。 相似文献
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We report the first experimental detailed study of laser induced surface melting on the nanoscale time scale of amorphous silicon carbide layers produced by ion implantation. Time-resolved reflectivity has been used to observe the fast liquid–solid–liquid transition features, and transmission electron microscopy (TEM) was used in order to study the structure resulting after the fast solidification following the laser induced melting. By means of the evaluation of the laser fluences required to induce melting of amorphous layers of different thickness on top of a crystalline substrate, we evaluated the thermal diffusion coefficient and the melting point of the amorphous material which occurred much lower than for crystalline material. Moreover, we give evidence of amorphous-to-crystal transitions occurring in the solid phase on the nanosecond time scale, for laser irradiation at fluences below the melting threshold. A quite different crystalline structure is observed for crystallization from the liquid phase than from the solid phase. 相似文献
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研究了超枝化偶氮液晶高分子在脉冲激光辐射下的各向异性取向特性.实验结果表明:在脉冲激光辐射下,偶氮基团沿着垂直于激光的偏振方向取向,并且由于纳秒激光辐射具有强烈的热效应,偶氮基团的取向程度对激光强度变化呈现出独特的抛物线行为.经过在一定温度条件下的加热处理,偶氮基团的取向程度大大增强. 相似文献
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The paper discusses a classical resource allocation problem. Using elementary arguments on Lagrangian duality it is shown that this problem can be reduced to a single one-dimensional maximization of a differentiable concave function. Moreover, a simple graphical method is developed and applied to a family of well-known problems from the literature. 相似文献
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确定任意形状物体最小包围盒的一种方法 总被引:1,自引:0,他引:1
最小包围盒广泛应用于碰撞检测、模具分型设计、产品包装设计以及图像处理、模式识别等领域。根据不同的应用场合对包围盒的不同要求,提出了一种简单、实用的确定任意物体最小包围盒的方法,利用现有的CAD软件本身具有确定轴向包围盒的功能,通过对AutoCAD软件的二次开发,利用程序自动确定出任意形状物体的最小体积包围盒或最小面积包围盒,以适应于不同的应用场合。 相似文献
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Regarding the problem that the traditional straight-line generating has a low accuracy, we study straight-line generating with the distance of point to line. We explore generating a line to approximate the ideal line and the issue is to pick out the pixel point of approximating the ideal line. The paper plays a significant scientific role in elucidating linear optimization norm and it lays a foundation for showing a straight line. The algorithm is valuable for computer graphics. 相似文献
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A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers 下载免费PDF全文
Jiang Pu Taiyo Fujimoto Yuki Ohasi Shota Kimura Chang‐Hsiao Chen Lain‐Jong Li Tomo Sakanoue Taishi Takenobu 《Advanced materials (Deerfield Beach, Fla.)》2017,29(24)
The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices. 相似文献
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采用化学气相沉积法(chemical vapor deposition,CVD)自制的碳纳米管阵列为原料,经过研磨、灼烧纯化得到分散的多壁碳纳米管(multi-walled carbon nanotubes,MWCNTs).采用纳秒脉冲激光(波长355 nm),分别在不同条件下对丝网印刷法制备的MWCNTs薄膜进行照射.扫描电子显微镜(scanning electron microscope,SEM)表征结果表明,进行相互垂直的双向扫描照射的效果明显好于单向扫描照射的效果,即由前者得到的MWCNTs的网状结构的立体感更明显,单位面积的MWCNTs端点更多;随着脉冲激光能量密度的逐渐增加,突出于表面的MWCNTs端点逐渐增多,以MWCNTs为主的网状分布的轮廓逐渐清晰;脉冲激光重复频率的增加,也有利于改善MWCNTs薄膜表面的形貌.经过脉冲激光能量51.0μJ(1.03 W)、频率20 kHz的脉冲激光照射后,得到以MWCNTs为主的、立体感显著、比较稀疏的网状分布结构,且单位面积的MWCNTs端点数目显著增多. 相似文献
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《IEEE sensors journal》2006,6(5):1200-1208
High-speed cameras use the interesting performances of CMOS imagers that offer advantages in on-chip functionalities, system power reduction, cost, and miniaturization. The FAst MOS Imager (FAMOSI) project consists in reproducing the streak camera functionality with a CMOS imager. In this paper, a new imager called FAMOSI 2, which implements an electronic shutter and analog accumulation capabilities inside the pixel, is presented. With this kind of pixel and the new architecture for controlling the integration, FAMOSI 2 can work in repetitive mode for low light power and in single shot mode for higher light power. This repetitive mode utilizes an analog accumulation to improve the sensitivity of the system with a standard n-well/$ p_ sub$ photodiode. The characterization has been realized in single shot mode to optimize the accumulation mode. The prototype has been fabricated in the Austriamicrosystems 0.35-$muhboxm$ CMOS process. The chip is composed of 64 columns$times$ 64 rows of pixels. The pixels have a size of 20$muhboxm$ $times$ 20$muhboxm$ and a fill factor of 47%. 相似文献
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S. I. Tkachenko 《High Temperature》2001,39(2):195-198
The initial stage of explosion of a thin tungsten wire by a high-power current pulse of nanosecond duration is simulated. Radial distributions of parameters of matter are obtained for two models. According to one of the models, it is assumed that an instantaneous separation into phases occurs if the parameters of metal have reached values corresponding to the binodal; in the other model, the existence of a metastable state is allowed. Phase trajectories in the P–Tand –Tplanes are given. 相似文献
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A Novel Method of Arraying Permanent Magnets Circumferentially to Generate a Rotation Magnetic Field
《IEEE transactions on magnetics》2008,44(10):2367-2372
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Technical Physics Letters - Hydrogel electrodes transparent in the visible range have been used for the first time to generate periodic sequences of nanosecond pulsed spark discharges with current... 相似文献
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在绝缘材料表面制备半导电性及高导热系数的涂层可以明显提高材料的沿面闪络性能.采用高真空反应磁控溅射方法,在环氧基片表面溅射TiO2、ZrO2,HfO2薄膜,使用快脉冲真空闪络实验装置(50ns/600ns,前沿和半高宽时间),在真空度5×10-3Pa时,研究了上述三种氧化物薄膜的真空闪络特性.实验发现,TiO2和ZrO2薄膜以无定形态存在,表面颗粒未晶化,而HfO2薄膜已经晶化. TiO2薄膜的闪络电压最高,HfO2薄膜较低.TiO2和HfO2随着溅射时间的增加,镀膜的真空闪络电压有所提高,而ZrO2随着溅射时间的增加,镀膜的真空闪络电压有所下降.结合ANSOFT静电场仿真数据,分析了薄膜的基本特性对闪络后表面电位分布及闪络电压的影响机制. 相似文献
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脉管制冷机特征线数值分析方法 总被引:1,自引:1,他引:0
提出运用特征线方法数值计算脉管制冷机的内部流动,提出相应离散方法,数值计算方法和特征线边初值问题的处理方法。算例结合实验进行验证,并论述了脉管制冷机部流动特征线数值分析方法的数理意义。 相似文献