2D Porous TiO2 Single‐Crystalline Nanostructure Demonstrating High Photo‐Electrochemical Water Splitting Performance

Porous single crystals are promising candidates for solar fuel production owing to their long range charge diffusion length, structural coherence, and sufficient reactive sites. Here, a simple template‐free method of growing a selectively branched, 2D anatase TiO₂ porous single crystalline nanostructure (PSN) on fluorine‐doped tin oxide substrate is demonstrated. An innovative ion exchange–induced pore‐forming process is designed to successfully create high porosity in the single‐crystalline nanostructure with retention of excellent charge mobility and no detriment to crystal structure. PSN TiO₂ film delivers a photocurrent of 1.02 mA cm^?2 at a very low potential of 0.4 V versus reversible hydrogen electrode (RHE) for photo‐electrochemical water splitting, closing to the theoretical value of TiO₂ (1.12 mA cm^?2). Moreover, the current–potential curve featuring a small potential window from 0.1 to 0.4 V versus RHE under one‐sun illumination has a near‐ideal shape predicted by the Gartner Model, revealing that the charge separation and surface reaction on the PSN TiO₂ photoanode are very efficient. The photo‐electrochemical water splitting performance of the films indicates that the ion exchange–assisted synthesis strategy is effective in creating large surface area and single‐crystalline porous photoelectrodes for efficient solar energy conversion.     

Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2

Layered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe₂. However, the syntheses of monolayer and large‐area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 10⁵ µm² large films of the typical 2D CDW conductor—TiSe₂—by ambient‐pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as‐grown samples are highly crystalline 1T‐phase TiSe₂. Variable‐temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe₂, indicative of high crystal quality. This work not only allows the exploration of many‐body state of TiSe₂ in 2D limit but also offers the possibility of utilizing large‐area TiSe₂ in ultrathin electronic devices.     

Highly Luminescent 2D‐Type Slab Crystals Based on a Molecular Charge‐Transfer Complex as Promising Organic Light‐Emitting Transistor Materials

A new 2:1 donor (D):acceptor (A) mixed‐stacked charge‐transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene‐based D and A molecules is designed and synthesized. Uniform 2D‐type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ _F ≈ 60%) is realized by non‐negligible oscillator strength of the S₁ transition, and rigidified 2D‐type structure. Moreover, this luminescent 2D‐type CT crystal exhibits balanced ambipolar transport (µ _h and µ _e of ≈10^?4 cm² V^?1 s^?1). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active‐layered organic light‐emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed‐stacked CT cocrystals in OLET applications.     

A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide

Biological synapses store and process information simultaneously by tuning the connection between two neighboring neurons. Such functionality inspires the task of hardware implementation of neuromorphic computing systems. Ionic/electronic hybrid three‐terminal memristive devices, in which the channel conductance can be modulated according to the history of applied voltage and current, provide a more promising way of emulating synapses by a substantial reduction in complexity and energy consumption. 2D van der Waals materials with single or few layers of crystal unit cells have been a widespread innovation in three‐terminal electronic devices. However, less attention has been paid to 2D transition‐metal oxides, which have good stability and technique compatibility. Here, nanoscale three‐terminal memristive transistors based on quasi‐2D α‐phase molybdenum oxide (α‐MoO₃) to emulate biological synapses are presented. The essential synaptic behaviors, such as excitatory postsynaptic current, depression and potentiation of synaptic weight, and paired‐pulse facilitation, as well as the transition of short‐term plasticity to long‐term potentiation, are demonstrated in the three‐terminal devices. These results provide an insight into the potential application of 2D transition‐metal oxides for synaptic devices with high scaling ability, low energy consumption, and high processing efficiency.     

Impurity‐Induced First‐Order Phase Transitions in Highly Crystalline V2O3 Nanocrystals

A first‐order phase transition in a bulk material is generally considered to arise at extended defects such as grain boundaries or dislocations, where the energetic barrier between the two phases is reduced. Downsizing a crystal to the nanoscale can exclude the number of defects, leading to enhanced kinetic stabilization of the metastable phase. Here, the disappearance of the first‐order metal–insulator transition in defect‐free V₂O₃ nanocrystals and the revival of the transition by introducing a certain Cr or Ti impurity content are investigated. The hysteresis width of the transition corresponding to the barrier height decreases with the impurity content. It is proposed that homogeneous impurity doping is a universal method that can control the occurrence of a first‐order phase transition in nanoscale materials.     

Influence of compression aging on phase transition temperatures in single crystalline Ni‐rich NiTi shape memory alloys

The present paper considers the phase transition behavior of a single crystal Ni‐rich NiTi alloy which was compression aged to produce one single family of Ni₄Ti₃ precipitates. The single crystal material was produced in a two stage process. Polycrystalline material was first melted under an inert atmosphere and remelted when single crystals were produced. Compression aging treatments in <111>‐orientation were carried out in order to suppress all but one family of Ni₄Ti₃‐precipitates which nucleate and grow on {111}‐planes of the B2 matrix. The objective of this study is to investigate the influence of Ni₄Ti₃‐precipitates on the martensitic transformation behavior. It was previously shown that grain boundaries provide heterogeneous nucleation sites for the formation of Ni₄Ti₃; this results in heterogeneous microstructures which undergo multiple step martensitic transformations. Single crystals avoid grain boundaries and the present study aims at clarifying how homogeneously precipitated particles affect martensitic transformations.     

In‐Plane Anisotropic Properties of 1T′‐MoS2 Layers

Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T′), and trigonal prismatic (2H) phases. Among these, the 1T′ phase offers unique properties and advantages in various applications. Moreover, the 1T′ phase consists of unique zigzag chains of the transition metals, giving rise to interesting in‐plane anisotropic properties. Herein, the in‐plane optical and electrical anisotropies of metastable 1T′‐MoS₂ layers are investigated by the angle‐resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J₁ and J₂ peaks in the angle‐resolved Raman spectra is a key characteristic of high‐quality 1T′‐MoS₂ crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.     

Linear Dichroism and Nondestructive Crystalline Identification of Anisotropic Semimetal Few‐Layer MoTe2

Semimetal 1T′ MoTe₂ crystals have attracted tremendous attention owing to their anisotropic optical properties, Weyl semimetal, phase transition, and so on. However, the complex refractive indices (n‐ik) of the anisotropic semimetal 1T′ MoTe₂ still are not revealed yet, which is important to applications such as polarized wide spectrum detectors, polarized surface plasmonics, and nonlinear optics. Here, the linear dichroism of as‐grown trilayer 1T′ MoTe₂ single crystals is investigated. Trilayer 1T′ MoTe₂ shows obvious anisotropic optical absorption due to the intraband transition of d_z² orbits for Mo atoms and p_x orbits for Te atoms. The anisotropic complex refractive indices of few‐layer 1T′ MoTe₂ are experimentally obtained for the first time by using the Pinier equation analysis. Based on the linear dichroism of 1T′ MoTe₂, angle‐resolved polarized optical microscopy is developed to visualize the grain boundary and identify the crystal orientation of 1T′ MoTe₂ crystals, which is also an excellent tool toward the investigation of the optical absorption properties in the visible range for anisotropic 2D transition metal chalcogenides. This work provides a universal and nondestructive method to identify the crystal orientation of anisotropic 2D materials, which opens up an opportunity to investigate the optical application of anisotropic semimetal 2D materials.     

Controllable Synthesis of Atomically Thin Type‐II Weyl Semimetal WTe2 Nanosheets: An Advanced Electrode Material for All‐Solid‐State Flexible Supercapacitors

Compared with 2D S‐based and Se‐based transition metal dichalcogenides (TMDs), Te‐based TMDs display much better electrical conductivities, which will be beneficial to enhance the capacitances in supercapacitors. However, to date, the reports about the applications of Te‐based TMDs in supercapacitors are quite rare. Herein, the first supercapacitor example of the Te‐based TMD is reported: the type‐II Weyl semimetal 1Td WTe₂. It is demonstrated that single crystals of 1Td WTe₂ can be exfoliated into the nanosheets with 2–7 layers by liquid‐phase exfoliation, which are assembled into air‐stable films and further all‐solid‐state flexible supercapacitors. The resulting supercapacitors deliver a mass capacitance of 221 F g^?1 and a stack capacitance of 74 F cm^?3. Furthermore, they also show excellent volumetric energy and power densities of 0.01 Wh cm^?3 and 83.6 W cm^?3, respectively, superior to the commercial 4V/500 µAh Li thin‐film battery and the commercial 3V/300 µAh Al electrolytic capacitor, in association with outstanding mechanical flexibility and superior cycling stability (capacitance retention of ≈91% after 5500 cycles). These results indicate that the 1Td WTe₂ nanosheet is a promising flexible electrode material for high‐performance energy storage devices.     

High Phase Purity of Large‐Sized 1T′‐MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂. Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T′‐MoS₂, probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase‐purity 1T′‐MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter‐sized 1T′ crystal is introduced to successfully produce a high‐yield of 1T′‐MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large‐sized and high‐quality 1T′‐MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T′‐MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.     

Investigation of Potassium Storage in Layered P3‐Type K0.5MnO2 Cathode

Novel and low‐cost batteries are of considerable interest for application in large‐scale energy storage systems, for which the cost per cycle becomes critical. Here, this study proposes K_0.5MnO₂ as a potential cathode material for K‐ion batteries as an alternative to Li technology. K_0.5MnO₂ has a P3‐type layered structure and delivers a reversible specific capacity of ≈100 mAh g^?1 with good capacity retention. In situ X‐ray diffraction analysis reveals that the material undergoes a reversible phase transition upon K extraction and insertion. In addition, first‐principles calculations indicate that this phase transition is driven by the relative phase stability of different oxygen stackings with respect to the K content.     

Micro‐Blooming: Hierarchically Porous Nitrogen‐Doped Carbon Flowers Derived from Metal‐Organic Mesocrystals

Synthesis of 3D flower‐like zinc‐nitrilotriacetic acid (ZnNTA) mesocrystals and their conformal transformation to hierarchically porous N‐doped carbon superstructures is reported. During the solvothermal reaction, 2D nanosheet primary building blocks undergo oriented attachment and mesoscale assembly forming stacked layers. The secondary nucleation and growth preferentially occurs at the edges and defects of the layers, leading to formation of 3D flower‐like mesocrystals comprised of interconnected 2D micropetals. By simply varying the pyrolysis temperature (550–1000 °C) and the removal method of in the situ‐generated Zn species, nonporous parent mesocrystals are transformed to hierarchically porous carbon flowers with controllable surface area (970–1605 m² g^?1), nitrogen content (3.4–14.1 at%), pore volume (0.95–2.19 cm³ g^?1), as well as pore diameter and structures. The carbon flowers prepared at 550 °C show high CO₂/N₂ selectivity due to the high nitrogen content and the large fraction of (ultra)micropores, which can greatly increase the CO₂ affinity. The results show that the physicochemical properties of carbons are highly dependent on the thermal transformation and associated pore formation process, rather than directly inherited from parent precursors. The present strategy demonstrates metal‐organic mesocrystals as a facile and versatile means toward 3D hierarchical carbon superstructures that are attractive for a number of potential applications.     

The First 2D Homochiral Lead Iodide Perovskite Ferroelectrics: [R‐ and S‐1‐(4‐Chlorophenyl)ethylammonium]2PbI4

2D organic–inorganic lead iodide perovskites have recently received tremendous attention as promising light absorbers for solar cells, due to their excellent optoelectronic properties, structural tunability, and environmental stability. However, although great efforts have been made, no 2D lead iodide perovskites have been discovered as ferroelectrics, in which the ferroelectricity may improve the photovoltaic performance. Here, by incorporating homochiral cations, 2D lead iodide perovskite ferroelectrics [R‐1‐(4‐chlorophenyl)ethylammonium]₂PbI₄ and [S‐1‐(4‐chlorophenyl)ethylammonium]₂PbI₄ are successfully obtained. The vibrational circular dichroism spectra and crystal structural analysis reveal their homochirality. They both crystalize in a polar space group P1 at room temperature, and undergo a 422F1 type ferroelectric phase transition with transition temperature as high as 483 and 473.2 K, respectively, showing a multiaxial ferroelectric nature. They also possess semiconductor characteristics with a direct bandgap of 2.34 eV. Nevertheless, their racemic analogue adopts a centrosymmetric space group P2₁/c at room temperature, exhibiting no high‐temperature phase transition. The homochirality in 2D lead iodide perovskites facilitates crystallization in polar space groups. This finding indicates an effective way to design high‐performance 2D lead iodide perovskite ferroelectrics with great application prospects.     

Twinned Growth of Metal‐Free,Triazine‐Based Photocatalyst Films as Mixed‐Dimensional (2D/3D) van der Waals Heterostructures

Design and synthesis of ordered, metal‐free layered materials is intrinsically difficult due to the limitations of vapor deposition processes that are used in their making. Mixed‐dimensional (2D/3D) metal‐free van der Waals (vdW) heterostructures based on triazine (C₃N₃) linkers grow as large area, transparent yellow‐orange membranes on copper surfaces from solution. The membranes have an indirect band gap (E _g,opt = 1.91 eV, E _g,elec = 1.84 eV) and are moderately porous (124 m² g^?1). The material consists of a crystalline 2D phase that is fully sp² hybridized and provides structural stability, and an amorphous, porous phase with mixed sp²–sp hybridization. Interestingly, this 2D/3D vdW heterostructure grows in a twinned mechanism from a one‐pot reaction mixture: unprecedented for metal‐free frameworks and a direct consequence of on‐catalyst synthesis. Thanks to the efficient type I heterojunction, electron transfer processes are fundamentally improved and hence, the material is capable of metal‐free, light‐induced hydrogen evolution from water without the need for a noble metal cocatalyst (34 µmol h^?1 g^?1 without Pt). The results highlight that twinned growth mechanisms are observed in the realm of “wet” chemistry, and that they can be used to fabricate otherwise challenging 2D/3D vdW heterostructures with composite properties.     

Tracking Structural Phase Transitions in Lead‐Halide Perovskites by Means of Thermal Expansion

The extraordinary properties of lead‐halide perovskite materials have spurred intense research, as they have a realistic perspective to play an important role in future photovoltaic devices. It is known that these materials undergo a number of structural phase transitions as a function of temperature that markedly alter their optical and electronic properties. The precise phase transition temperature and exact crystal structure in each phase, however, are controversially discussed in the literature. The linear thermal expansion of single crystals of APbX₃ (A = methylammonium (MA), formamidinium (FA); X = I, Br) below room temperature is measured using a high‐resolution capacitive dilatometer to determine the phase transition temperatures. For δ‐FAPbI₃, two wide regions of negative thermal expansion below 173 and 54 K, and a cascade of sharp transitions for FAPbBr₃ that have not previously been reported are uncovered. Their respective crystal phases are identified via powder X‐ray diffraction. Moreover, it is demonstrated that transport under steady‐state illumination is considerably altered at the structural phase transition in the MA compounds. The results provide advanced insights into the evolution of the crystal structure with decreasing temperature that are essential to interpret the growing interest in investigating the electronic, optical, and photonic properties of lead‐halide perovskite materials.     

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

Piezoelectricity Across a Strain‐Induced Isosymmetric Ferri‐to‐Ferroelectric Transition

We identify a first‐order, isosymmetric transition between a ferrielectric (FiE) and ferroelectric (FE) state in A‐site ordered LaScO₃/BiScO₃ and LaInO₃/BiInO₃ superlattices. Such a previously unreported ferroic transition is driven by the easy switching of cation displacements without changing the overall polarization direction or crystallographic symmetry. Epitaxial strains less than 2% are predicted to be sufficient to traverse the phase boundary, across which we capture a ≈5× increase in electric polarization. Unlike conventional Pb‐based perovskite ceramics with a morphotropic phase boundary (MPB) that show polarization rotation, we predict an electromechanical response up to 102 pC/N in the vicinity of the FiE‐FE phase boundary due to polarization switching without any change in symmetry. We propose this transition as an alternative ferroic transition to obtain a piezoelectric response, with the additional advantage of occurring in benign chemistries without chemical disorder.     

Charge Transport Through a Cardan‐Joint Molecule

The charge transport through a single ruthenium atom clamped by two terpyridine hinges is investigated, both experimentally and theoretically. The metal‐bis(terpyridyl) core is equipped with rigid, conjugated linkers of para‐acetyl‐mercapto phenylacetylene to establish electrical contact in a two‐terminal configuration using Au electrodes. The structure of the [Ru^II( L )₂](PF₆)₂ molecule is determined using single‐crystal X‐ray crystallography, which yields good agreement with calculations based on density functional theory (DFT). By means of the mechanically controllable break‐junction technique, current–voltage (I–V), characteristics of [Ru^II( L )₂](PF₆)₂ are acquired on a single‐molecule level under ultra‐high vacuum (UHV) conditions at various temperatures. These results are compared to ab initio transport calculations based on DFT. The simulations show that the cardan‐joint structural element of the molecule controls the magnitude of the current. Moreover, the fluctuations in the cardan angle leave the positions of steps in the I–V curve largely invariant. As a consequence, the experimental I–V characteristics exhibit lowest‐unoccupied‐molecular‐orbit‐based conductance peaks at particular voltages, which are also found to be temperature independent.     

Ultrafast Pathways of the Photoinduced Insulator–Metal Transition in a Low‐Dimensional Organic Conductor

Among functional organic materials, low‐dimensional molecular crystals represent an intriguing class of solids due to their tunable electronic, magnetic, and structural ground states. This work investigates Cu(Me,Br‐dicyanoquinonediimine)₂ single crystals, a charge transfer radical ion salt which exhibits a Peierls insulator‐to‐metal transition at low temperatures. The ultrafast electron diffraction experiments observe collective atomic motions at the photoinduced phase transition with a temporal resolution of 1 ps. These measurements reveal the photoinduced lifting of the insulating phase to happen within 2 ps in the entire crystal volume with an external quantum efficiency of conduction band electrons per absorbed photon of larger than 20. This huge cooperativity of the system, directly monitored during the phase transition, is accompanied by specific intramolecular motions. However, only an additional internal volume expansion, corresponding to a pressure relief, allows the metallic state for long times to be optically locked. The identification of the microscopic molecular pathways that optically drive the structural Peierls transition in Cu(DCNQI)₂ highlights the tailored response to external stimuli available in these complex functional materials, a feature enabling high‐speed optical sensing and switching with outstanding signal responsivity.     

Addressable and Color‐Tunable Piezophotonic Light‐Emitting Stripes

Piezophotonic light‐emitting devices have great potential for future microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) due to the added functionality provided by the electromechanical transduction coupled with the ability of light emission. Piezophotonic light‐emitting source based on Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) bulk is severely restricted by many challenges, such as high voltage burden, low integration density, and micromanufacturing complexity. Developing chip‐integrated devices or incorporating such photonic components onto a Si platform is highly sought after in this field. In this work, the authors overcome the abovementioned problems by introducing single‐crystal PMN–PT thin films on Si as central active elements. Taking advantage of mature microfabrication techniques, arrays of PMN–PT actuators with small footprints and low operation voltages have been implemented. Each actuator can be individually addressed, generating local deformation to trigger piezophotonic luminescence from ZnS:Mn thin films. Moreover, the authors have realized continuous and reversible color manipulation of piezophotonic luminescence on a bilayer film of ZnS:Cu,Al/ZnS:Mn. The color tunability promises an extra degree of freedom and distinctly suggests its great potential in developing a more compact and colorful piezophotonic light sources and displays related applications together with the “single pixel” addressability.