Temperature‐Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures

The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS₂ prepared by chemical vapor deposition is nearly defect‐free after annealing under ultrahigh vacuum conditions at ≈400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at ≈900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS₂ as‐grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS₂, leading to a decrease of the bandgap and an obvious n‐doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first‐principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three‐atom‐thin 2D layered semiconductors.     

Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion‐Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols

Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effective approach to engineer chemically active defects in 2D materials. In this context, argon‐ion bombardment has been utilized to introduce sulfur vacancies in monolayer molybdenum disulfide (MoS₂). However, a detailed understanding of the effects of generated defects on the functional properties of 2D MoS₂ is still lacking. In this work, the correlation between critical electronic device parameters and the density of sulfur vacancies is systematically investigated through the fabrication and characterization of back‐gated monolayer MoS₂ field‐effect transistors (FETs) exposed to a variable fluence of low‐energy argon ions. The electrical properties of pristine and ion‐irradiated FETs can be largely improved/recovered by exposing the devices to vapors of short linear thiolated molecules. Such a solvent‐free chemical treatment—carried out strictly under inert atmosphere—rules out secondary healing effects induced by oxygen or oxygen‐containing molecules. The results provide a guideline to design monolayer MoS₂ optoelectronic devices with a controlled density of sulfur vacancies, which can be further exploited to introduce ad hoc molecular functionalities by means of thiol chemistry approaches.     

Phosphorus‐Mediated MoS2 Nanowires as a High‐Performance Electrode Material for Quasi‐Solid‐State Sodium‐Ion Intercalation Supercapacitors

Molybdenum disulfide (MoS₂) is a promising electrode material for electrochemical energy storage owing to its high theoretical specific capacity and fascinating 2D layered structure. However, its sluggish kinetics for ionic diffusion and charge transfer limits its practical applications. Here, a promising strategy is reported for enhancing the Na⁺‐ion charge storage kinetics of MoS₂ for supercapacitors. In this strategy, electrical conductivity is enhanced and the diffusion barrier of Na⁺ ion is lowered by a facile phosphorus‐doping treatment. Density functional theory results reveal that the lowest energy barrier of dilute Na‐vacancy diffusion on P‐doped MoS₂ (0.11 eV) is considerably lower than that on pure MoS₂ (0.19 eV), thereby signifying a prominent rate performance at high Na intercalation stages upon P‐doping. Moreover, the Na‐vacancy diffusion coefficient of the P‐doped MoS₂ at room temperatures can be enhanced substantially by approximately two orders of magnitude (10^?6–10^?4 cm² s^?1) compared with pure MoS₂. Finally, the quasi‐solid‐state asymmetrical supercapacitor assembled with P‐doped MoS₂ and MnO₂, as the positive and negative electrode materials, respectively, exhibits an ultrahigh energy density of 67.4 W h kg^?1 at 850 W kg^?1 and excellent cycling stability with 93.4% capacitance retention after 5000 cycles at 8 A g^?1.     

Aligned Heterointerface‐Induced 1T‐MoS2 Monolayer with Near‐Ideal Gibbs Free for Stable Hydrogen Evolution Reaction

1T‐phase molybdenum disulfide (1T‐MoS₂) exhibits superior hydrogen evolution reaction (HER) over 2H‐phase MoS₂ (2H‐MoS₂). However, its thermodynamic instability is the main drawback impeding its practical application. In this work, a stable 1T‐MoS₂ monolayer formed at edge‐aligned 2H‐MoS₂ and a reduced graphene oxide heterointerface (EA‐2H/1T/RGO) using a precursor‐in‐solvent synthesis strategy are reported. Theoretical prediction indicates that the edge‐aligned layer stacking can induce heterointerfacial charge transfer, which results in a phase transition of the interfacial monolayer from 2H to 1T that realizes thermodynamic stability based on the adhesion energy between MoS₂ and graphene. As an electrocatalyst for HER, EA‐2H/1T/RGO displays an onset potential of ?103 mV versus RHE, a Tafel slope of 46 mV dec^?1 and 10 h stability in acidic electrolyte. The unexpected activity of EA‐2H/1T/RGO beyond 1T‐MoS₂ is due to an inherent defect caused by the gliding of S atoms during the phase transition from 2H to 1T, leading the Gibbs free energy of hydrogen adsorption (ΔG_H*) to decrease from 0.13 to 0.07 eV, which is closest to the ideal value (0.06 eV) of 2H‐MoS₂. The presented work provides fundamental insights into the impressive electrochemical properties of HER and opens new avenues for phase transitions at 2D/2D hybrid interfaces.     

Faster Electron Injection and More Active Sites for Efficient Photocatalytic H2 Evolution in g‐C3N4/MoS2 Hybrid

Herein, the structural effect of MoS₂ as a cocatalyst of photocatalytic H₂ generation activity of g‐C₃N₄ under visible light irradiation is studied. By using single‐particle photoluminescence (PL) and femtosecond time‐resolved transient absorption spectroscopies, charge transfer kinetics between g‐C₃N₄ and two kinds of nanostructured MoS₂ (nanodot and monolayer) are systematically investigated. Single‐particle PL results show the emission of g‐C₃N₄ is quenched by MoS₂ nanodots more effectively than MoS₂ monolayers. Electron injection rate and efficiency of g‐C₃N₄/MoS₂‐nanodot hybrid are calculated to be 5.96 × 10⁹ s^?1 and 73.3%, respectively, from transient absorption spectral measurement, which are 4.8 times faster and 2.0 times higher than those of g‐C₃N₄/MoS₂‐monolayer hybrid. Stronger intimate junction between MoS₂ nanodots and g‐C₃N₄ is suggested to be responsible for faster and more efficient electron injection. In addition, more unsaturated terminal sulfur atoms can serve as the active site in MoS₂ nanodot compared with MoS₂ monolayer. Therefore, g‐C₃N₄/MoS₂ nanodot exhibits a 7.9 times higher photocatalytic activity for H₂ evolution (660 µmol g?¹ h^?1) than g‐C₃N₄/MoS₂ monolayer (83.8 µmol g^?1 h^?1). This work provides deep insight into charge transfer between g‐C₃N₄ and nanostructured MoS₂ cocatalysts, which can open a new avenue for more rationally designing MoS₂‐based catalysts for H₂ evolution.     

Homoepitaxial Growth of Large‐Scale Highly Organized Transition Metal Dichalcogenide Patterns

Controllable growth of highly crystalline transition metal dichalcogenide (TMD) patterns with regular morphology and unique edge structure is highly desired and important for fundamental research and potential applications. Here, single‐crystalline MoS₂ flakes are reported with regular trigonal symmetric patterns that can be homoepitaxially grown on MoS₂ monolayer via chemical vapor deposition. The highly organized MoS₂ patterns are rhombohedral (3R)‐stacked with the underlying MoS₂ monolayer, and their boundaries are predominantly terminated by zigzag Mo edge structure. The epitaxial MoS₂ crystals can be tailored from compact triangles to fractal flakes, and the pattern formation can be explained by the anisotropic growth rates of the S and Mo edges under low sulfur chemical potential. The 3R‐stacked MoS₂ pattern demonstrates strong second and third‐harmonic‐generation signals, which exceed those reported for monolayer MoS₂ by a factor of 6 and 4, correspondingly. This homoepitaxial growth approach for making highly organized TMD patterns is also demonstrated for WS₂.     

Probing Defect‐Induced Midgap States in MoS2 Through Graphene–MoS2 Heterostructures

Crystalline defects in MoS₂ may induce midgap states, resulting in low carrier mobility. These midgap states are usually difficult to probe by conventional transport measurement. The quantum capacitance of single‐layer graphene is sensitive to defect‐induced states near the Dirac point, at which the density of states is extremely low. It is reported that the hexagonal‐boron nitride/graphene/MoS₂ sandwich structure facilitates the exploration of the properties of those midgap states in MoS₂. Comparative results of the quantum capacitance of pristine graphene indicate the presence of several midgap states with distinct features. Some of these states donate electrons while some states lead to localization of electrons. It is believed that these midgap states originate from intrinsic point defects such as sulfur vacancies, which have a significant impact on the property of the MoS₂/graphene interface. They are responsible for the contact problems of metal/MoS­₂ interfaces.     

Plasmon‐Enhanced Photoelectrical Hydrogen Evolution on Monolayer MoS2 Decorated Cu1.75S‐Au Nanocrystals

Hydrogen production from water splitting through an efficient photoelectrochemical route requires photoinduced electron transfer from light harvesters to efficient electrocatalysts. Here, the plasmon‐enhanced photoelectrical nanocatalysts (NCs) have been successfully developed by coating a monolayer MoS₂ on the Cu_1.75S‐Au hetero‐nanoparticle for hydrogen evolution reaction (HER). The plasmonic NCs dramatically improve the HER, leading to 29.5‐fold increase of current under 650 nm excitation (1.0 W cm^?2). These NCs generate an exceptionally high current density of 200 mA cm^?2 at overpotential of 182.8 mV with a Tafel slope of 39 mV per decade and excellent stability, which is better than or comparable to the Pt‐free catalysts with carbon rod as counter electrode. The enhanced HER performance can be attributed to the significantly improved broad light absorption (400–3000 nm), more efficient charge separation and abundant active edge sites of monolayer MoS₂. The studies may provide a facile strategy for the fabrication of efficient plasmon‐enhanced photoelectrical NCs for HER.     

Gap‐Mode Surface‐Plasmon‐Enhanced Photoluminescence and Photoresponse of MoS2

2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS₂ can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical‐to‐electrical conversion efficiency. To overcome this shortcoming, a “gap‐mode” plasmon‐enhanced monolayer MoS₂ fluorescent emitter and photodetector is designed by squeezing the light‐field into Ag shell‐isolated nanoparticles–Au film gap, where the confined electromagnetic field can interact with monolayer MoS₂. With this gap‐mode plasmon‐enhanced configuration, a 110‐fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon‐enhanced MoS₂ fluorescent emitters. In addition, a gap‐mode plasmon‐enhanced monolayer MoS₂ photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W^?1 is demonstrated, exceeding previously reported plasmon‐enhanced monolayer MoS₂ photodetectors.     

Molecular Nanowire Bonding to Epitaxial Single‐Layer MoS2 by an On‐Surface Ullmann Coupling Reaction

Lateral heterostructures consisting of 2D transition metal dichalcogenides (TMDCs) directly interfaced with molecular networks or nanowires can be used to construct new hybrid materials with interesting electronic and spintronic properties. However, chemical methods for selective and controllable bond formation between 2D materials and organic molecular networks need to be developed. As a demonstration of a self‐assembled organic nanowire‐TMDC system, a method to link and interconnect epitaxial single‐layer MoS₂ flakes with organic molecules is demonstrated. Whereas pristine epitaxial single‐layer MoS₂ has no affinity for molecular attachment, it is found that single‐layer MoS₂ will selectively bind the organic molecule 2,8‐dibromodibenzothiophene (DBDBT) in a surface‐assisted Ullmann coupling reaction when the MoS₂ has been activated by pre‐exposing it to hydrogen. Atom‐resolved scanning tunneling microscopy (STM) imaging is used to analyze the bonding of the nanowires, and thereby it is revealed that selective bonding takes place on a specific S atom at the corner site between the two types of zig‐zag edges available in a hexagonal single layer MoS₂ sheet. The method reported here successfully combining synthesis of epitaxial TMDCs and Ullmann coupling reactions on surfaces may open up new synthesis routes for 2D organic‐TMDC hybrid materials.     

Electrically Pumped White‐Light‐Emitting Diodes Based on Histidine‐Doped MoS2 Quantum Dots

MoS₂ quantum dots (QDs)‐based white‐light‐emitting diodes (QD‐WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine‐doped MoS₂ QDs synthesized by microwave induced fragmentation of 2D MoS₂ nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation‐wavelength‐dependent emission properties. Notably, the histidine‐doped MoS₂ QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS₂ QDs. The strongly enhanced emission is mainly attributed to nitrogen acceptor bound excitons and passivation of defects by histidine‐doping, which can enhance the radiative recombination drastically. The enabled electroluminescence (EL) spectra of the QD‐WLEDs with the main peak around 500 nm are found to be consistent with the photoluminescence spectra of the histidine‐doped MoS₂ QDs. The enhanced intensity of EL spectra with the current increase shows the stability of histidine‐doped MoS₂ based QD‐WLEDs. The typical EL spectrum of the novel QD‐WLEDs has a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36) exhibiting an intrinsic broadband white‐light emission. The unprecedented and low‐toxicity QD‐WLEDs based on a single light‐emitting material can serve as an excellent alternative for using transition metal dichalcogenides QDs as next generation optoelectronic devices.     

Direct Bandgap Transition in Many‐Layer MoS2 by Plasma‐Induced Layer Decoupling

We report a robust method for engineering the optoelectronic properties of many‐layer MoS₂ using low‐energy oxygen plasma treatment. Gas phase treatment of MoS₂ with oxygen radicals generated in an upstream N₂–O₂ plasma is shown to enhance the photoluminescence (PL) of many‐layer, mechanically exfoliated MoS₂ flakes by up to 20 times, without reducing the layer thickness of the material. A blueshift in the PL spectra and narrowing of linewidth are consistent with a transition of MoS₂ from indirect to direct bandgap material. Atomic force microscopy and Raman spectra reveal that the flake thickness actually increases as a result of the plasma treatment, indicating an increase in the interlayer separation in MoS₂. Ab initio calculations reveal that the increased interlayer separation is sufficient to decouple the electronic states in individual layers, leading to a transition from an indirect to direct gap semiconductor. With optimized plasma treatment parameters, we observed enhanced PL signals for 32 out of 35 many‐layer MoS₂ flakes (2–15 layers) tested, indicating that this method is robust and scalable. Monolayer MoS₂, while direct bandgap, has a small optical density, which limits its potential use in practical devices. The results presented here provide a material with the direct bandgap of monolayer MoS₂, without reducing sample thickness, and hence optical density.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.     

Tailoring MoS2 Valley‐Polarized Photoluminescence with Super Chiral Near‐Field

Transition metal dichalcogenides with intrinsic spin–valley degrees of freedom hold great potentials for applications in spintronic and valleytronic devices. MoS₂ monolayer possesses two inequivalent valleys in the Brillouin zone, with each valley coupling selectively with circularly polarized photons. The degree of valley polarization (DVP) is a parameter to characterize the purity of valley‐polarized photoluminescence (PL) of MoS₂ monolayer. Usually, the detected values of DVP in MoS₂ monolayer show achiral property under optical excitation of opposite helicities due to reciprocal phonon‐assisted intervalley scattering process. Here, it is reported that valley‐polarized PL of MoS₂ can be tailored through near‐field interaction with plasmonic chiral metasurface. The resonant field of the chiral metasurface couples with valley‐polarized excitons, and tailors the measured PL spectra in the far‐field, resulting in observation of chiral DVP of MoS₂‐metasurface under opposite helicities excitations. Valley‐contrast PL in the chiral heterostructure is also observed when illuminated by linearly polarized light. The manipulation of valley‐polarized PL in 2D materials using chiral metasurface represents a viable route toward valley‐polaritonic devices.     

Vacancy‐Driven Gelation Using Defect‐Rich Nanoassemblies of 2D Transition Metal Dichalcogenides and Polymeric Binder for Biomedical Applications

A new approach of vacancy‐driven gelation to obtain chemically crosslinked hydrogels from defect‐rich 2D molybdenum disulfide (MoS₂) nanoassemblies and polymeric binder is reported. This approach utilizes the planar and edge atomic defects available on the surface of the 2D MoS₂ nanoassemblies to form mechanically resilient and elastomeric nanocomposite hydrogels. The atomic defects present on the lattice plane of 2D MoS₂ nanoassemblies are due to atomic vacancies and can act as an active center for vacancy‐driven gelation with a thiol‐activated terminal such as four‐arm poly(ethylene glycol)–thiol (PEG‐SH) via chemisorption. By modulating the number of vacancies on the 2D MoS₂ nanoassemblies, the physical and chemical properties of the hydrogel network can be controlled. This vacancy‐driven gelation process does not require external stimuli such as UV exposure, chemical initiator, or thermal agitation for crosslinking and thus provides a nontoxic and facile approach to encapsulate cells and proteins. 2D MoS₂ nanoassemblies are cytocompatible, and encapsulated cells in the nanocomposite hydrogels show high viability. Overall, the nanoengineered hydrogel obtained from vacancy‐driven gelation is mechanically resilient and can be used for a range of biomedical applications including tissue engineering, regenerative medicine, and cell and therapeutic delivery.     

Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules

Although 2D molybdenum disulfide (MoS₂) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high‐performance 2D MoS₂‐based devices. In this regard, many studies have been conducted to improve the carrier‐injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time‐consuming and low‐yield transfer processes on sub‐micrometer MoS₂ flakes. Here, a simple contact‐engineering method is suggested, introducing chemically adsorbed thiol‐molecules as thin tunneling barriers between the metal electrodes and MoS₂ channels. The selectively deposited thiol‐molecules via the vapor‐deposition process provide additional tunneling paths at the contact regions, improving the carrier‐injection properties with lower activation energies in MoS₂ field‐effect transistors. Additionally, by inserting thiol‐molecules at the only one contact region, asymmetric carrier‐injection is feasible depending on the temperature and gate bias.     

Probing Effective Out‐of‐Plane Piezoelectricity in van der Waals Layered Materials Induced by Flexoelectricity

Many van der Waals layered 2D materials, such as h‐BN, transition metal dichalcogenides (TMDs), and group‐III monochalcogenides, have been predicted to possess piezoelectric and mechanically flexible natures, which greatly motivates potential applications in piezotronic devices and nanogenerators. However, only intrinsic in‐plane piezoelectricity exists in these 2D materials and the piezoelectric effect is confined in odd‐layers of TMDs. The present work is intent on combining the free‐standing design and piezoresponse force microscopy techniques to obtain and directly quantify the effective out‐of‐plane electromechanical coupling induced by strain gradient on atomically thin MoS₂ and InSe flakes. Conspicuous piezoresponse and the measured piezoelectric coefficient with respect to the number of layers or thickness are systematically illustrated for both MoS₂ and InSe flakes. Note that the promising effective piezoelectric coefficient (d^eff₃₃) of about 21.9 pm V^?1 is observed on few‐layered InSe. The out‐of‐plane piezoresponse arises from the net dipole moment along the normal direction of the curvature membrane induced by strain gradient. This work not only provides a feasible and flexible method to acquire and quantify the out‐of‐plane electromechanical coupling on van der Waals layered materials, but also paves the way to understand and tune the flexoelectric effect of 2D systems.     

Enhanced Photocarrier Generation with Selectable Wavelengths by M‐Decorated‐CuInS2 Nanocrystals (M = Au and Pt) Synthesized in a Single Surfactant Process on MoS2 Bilayers

A facile approach for the synthesis of Au‐ and Pt‐decorated CuInS₂ nanocrystals (CIS NCs) as sensitizer materials on the top of MoS₂ bilayers is demonstrated. A single surfactant (oleylamine) is used to prepare such heterostructured noble metal decorated CIS NCs from the pristine CIS. Such a feasible way to synthesize heterostructured noble metal decorated CIS NCs from the single surfactant can stimulate the development of the functionalized heterostructured NCs in large scale for practical applications such as solar cells and photodetectors. Photodetectors based on MoS₂ bilayers with the synthesized nanocrystals display enhanced photocurrent, almost 20–40 times higher responsivity and the On/Off ratio is enlarged one order of magnitude compared with the pristine MoS₂ bilayers‐based photodetectors. Remarkably, by using Pt‐ or Au‐decorated CIS NCs, the photocurrent enhancement of MoS₂ photodetectors can be tuned between blue (405 nm) to green (532 nm). The strategy described here acts as a perspective to significantly improve the performance of MoS₂‐based photodetectors with the controllable absorption wavelengths in the visible light range, showing the feasibility of the possible color detection.     

Temperature‐Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures

Other than the well‐known sulfurization of molybdate compound to synthesize molybdenum disulfide (MoS₂) layers, the dynamic process in the whole crystalline growth from nuclei to triangular domains has been rarely experimentally explored. Here, a competing sulfur‐capture principle jointly with strict epitaxial mechanism is first proposed for the initial topography evolution and the final intrinsic highly oriented growth of triangular MoS₂ domains with Mo or S terminations on the graphene (Gr) template. Additionally, potential distributions on MoS₂ domains and bare Gr are presented to be different due to the charge transfer within heterostructures. The findings offer the mechanism of templated growth of 2D transition metal dichalcogenides, and provide general principles in syntheses of vertical 2D heterostructures that can be applied to electronics.     

Generalized Scheme for High Performing Photodetectors with a p‐Type 2D Channel Layer and n‐Type Nanoparticles

A generalized scheme for the fabrication of high performance photodetectors consisting of a p‐type channel material and n‐type nanoparticles is proposed. The high performance of the proposed hybrid photodetector is achieved through enhanced photoabsorption and the photocurrent gain arising from its effective charge transfer mechanism. In this paper, the realization of this design is presented in a hybrid photodetector consisting of 2D p‐type black phosphorus (BP) and n‐type molybdenum disulfide nanoparticles (MoS₂ NPs), and it is demonstrated that it exhibits enhanced photoresponsivity and detectivity compared to pristine BP photodetectors. It is found that the performance of hybrid photodetector depends on the density of NPs on BP layer and that the response time can be reduced with increasing density of MoS₂ NPs. The rising and falling times of this photodetector are smaller than those of BP photodetectors without NPs. This proposed scheme is expected to work equally well for a photodetector with an n‐type channel material and p‐type nanoparticles.