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Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules 下载免费PDF全文
Kyungjune Cho Jinsu Pak Jae‐Keun Kim Keehoon Kang Tae‐Young Kim Jiwon Shin Barbara Yuri Choi Seungjun Chung Takhee Lee 《Advanced materials (Deerfield Beach, Fla.)》2018,30(18)
Although 2D molybdenum disulfide (MoS2) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high‐performance 2D MoS2‐based devices. In this regard, many studies have been conducted to improve the carrier‐injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time‐consuming and low‐yield transfer processes on sub‐micrometer MoS2 flakes. Here, a simple contact‐engineering method is suggested, introducing chemically adsorbed thiol‐molecules as thin tunneling barriers between the metal electrodes and MoS2 channels. The selectively deposited thiol‐molecules via the vapor‐deposition process provide additional tunneling paths at the contact regions, improving the carrier‐injection properties with lower activation energies in MoS2 field‐effect transistors. Additionally, by inserting thiol‐molecules at the only one contact region, asymmetric carrier‐injection is feasible depending on the temperature and gate bias. 相似文献
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Polymer Field‐Effect Transistors: Well‐Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High‐Performance Flexible Field‐Effect Transistors (Adv. Mater. 9/2018) 下载免费PDF全文
Keli Shi Weifeng Zhang Dong Gao Shiying Zhang Zuzhang Lin Ye Zou Liping Wang Gui Yu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(9)
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Organic Field‐Effect Transistors: Dramatic Inversion of Charge Polarity in Diketopyrrolopyrrole‐Based Organic Field‐Effect Transistors via a Simple Nitrile Group Substitution (Adv. Mater. 43/2014) 下载免费PDF全文
Hui‐Jun Yun Seok‐Ju Kang Yong Xu Seul Ong Kim Yun‐Hi Kim Yong‐Young Noh Soon‐Ki Kwon 《Advanced materials (Deerfield Beach, Fla.)》2014,26(43):7282-7282
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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016) 下载免费PDF全文
Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang 《Advanced materials (Deerfield Beach, Fla.)》2016,28(3):546-546
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Functional organic field‐effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed 相似文献
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MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit 下载免费PDF全文
Xingqiang Liu Renrong Liang Guoyun Gao Caofeng Pan Chunsheng Jiang Qian Xu Jun Luo Xuming Zou Zhenyu Yang Lei Liao Zhong Lin Wang 《Advanced materials (Deerfield Beach, Fla.)》2018,30(28)
The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec‐1 at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the “Boltzmann tyranny”. Such MoS2 negative‐capacitance field‐effect transistors (NC‐FETs) with self‐aligned top‐gated geometry demonstrated here pull down the SS value to 42.5 mV dec‐1, and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 106 with channel length less than 100 nm. Furthermore, the inserted HfO2 layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF‐TrFE) from fatigue with robust stability. Notably, the fabricated MoS2 NC‐FETs are distinctly different from traditional MOSFETs. The on‐state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC‐FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low‐power transistors needed for many exciting long‐endurance portable consumer products. 相似文献
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Field‐Effect Transistors: High Performance Polymer Nanowire Field‐Effect Transistors with Distinct Molecular Orientations (Adv. Mater. 34/2015) 下载免费PDF全文
Chengyi Xiao Guangyao Zhao Andong Zhang Wei Jiang René A. J. Janssen Weiwei Li Wenping Hu Zhaohui Wang 《Advanced materials (Deerfield Beach, Fla.)》2015,27(34):4949-4949
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Gate‐Tunable Hole and Electron Carrier Transport in Atomically Thin Dual‐Channel WSe2/MoS2 Heterostructure for Ambipolar Field‐Effect Transistors 下载免费PDF全文
Inyeal Lee Servin Rathi Dongsuk Lim Lijun Li Jinwoo Park Yoontae Lee Kyung Soo Yi Krishna P. Dhakal Jeongyong Kim Changgu Lee Gwan‐Hyoung Lee Young Duck Kim James Hone Sun Jin Yun Doo‐Hyeb Youn Gil‐Ho Kim 《Advanced materials (Deerfield Beach, Fla.)》2016,28(43):9519-9525
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Field‐Effect Transistors: Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition (Adv. Mater. 47/2017) 下载免费PDF全文
Woojin Jeon Yeonchoo Cho Sanghyun Jo Ji‐Hoon Ahn Seong‐Jun Jeong 《Advanced materials (Deerfield Beach, Fla.)》2017,29(47)
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