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The ever‐growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage‐driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin‐polarized ultrathin film of La0.74Sr0.26MnO3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V−1. The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm−2. This work provides a step forward toward low‐power, high‐endurance electrical switching of magnetism for the development of high‐performance ME spintronics.  相似文献   

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采用共沉法合成掺铈钇铁石榴石前驱体,并在900℃的温度下,煅烧合成钇铁石榴石相。利用XRD,SEM,XPS对材料的物相,形貌和Ce离子的价态进行了分析。XRD分析表明,Ce：YIG是纯的YIG相;SEM分析表明,试样颗粒呈球状,尺寸小于0.5μm,且有一定程度的团聚;XPS分析表明,Ce：YIG中Ce离子以正三价形式存在。  相似文献   

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The wavevector and temperature dependence of the spinwave linewidth in yttrium iron garnets has been studied for polycrystalline samples of average grain diameter 12·8μm and has been compared with the calculated relaxation times of basic three-magnon confluence and four-magnon scattering processes.  相似文献   

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The wave-vector dependence of the spin-wave line-width in yttrium iron garnets has been studied for samples of grain diameter varying from 1·2μm to 12μm. An expression for the spin-wave line-width as a function of wave-vector and grain diameter has been obtained, which agrees satisfactorily with experiment.  相似文献   

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Ionic‐liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage‐controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]?/Co field‐effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V?1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X‐ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic‐liquid‐gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion‐liquid‐gating spintronic/electronic devices.  相似文献   

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Ferrimagnetic bismuth substituted yttrium iron garnet BixY3 − xFe5O12 (BiYIG) films with x = 1 and 2 pulsed laser deposited onto (111) Gd3Ga5O12 (GGG) substrates were studied using magneto-optical (MO) Kerr spectroscopy in the photon energy range of 1.8-5 eV at both polar and longitudinal magnetizations. The interference at lower photon energies provided the refined film thicknesses ranging between 70 and 200 nm. The films were grown under compressive strain and displayed saturation magnetizations (μ0Ms) lower than that of their bulk counterparts due to the presence of nanograins forming BiYIG layers and/or magnetically dead interface layers. The trends in the MO spectra agree with those deduced from the published permittivity tensor data for BiYIG using a transfer matrix model applied to a film (BiYIG)-substrate (GGG) system. Due to the reduced μ0Ms the predicted amplitudes are typically higher. The agreement was improved using effective medium approach or by incorporating into the model MO passive interface layers. The information on MO activity at longitudinal magnetization in the garnet layers below 100 nm presents interest for MO imaging and magnetophotonic devices. The results suggest that the MO Kerr spectroscopy combined with MO Kerr magnetometry may represent a valuable, cheap and nondestructive tool for the characterization of magnetic garnet films less than 200 nm thick.  相似文献   

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Electric field (E‐field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy‐efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin‐reorientation transition (SRT) that allows the magnetic moment rotating between the out‐of‐plane and the in‐plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI]?/Pt/(Co/Pt)2/Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V?1. As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out‐of‐plane and in‐plane directions via IL gating. The key mechanism, revealed by the first‐principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in‐plane/out‐of‐plane magnetization switching. This work demonstrates a unique IL‐gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.  相似文献   

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Ionic‐liquid‐gating‐ (ILG‐) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5, VO2, WO3, etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2O4, an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. This study shows that environmental temperature is an efficient tuning knob to manipulate ILG‐induced ionic evolution.  相似文献   

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The control of magnetism by means of low‐power electric fields, rather than dissipative flowing currents, has the potential to revolutionize conventional methods of data storage and processing, sensing, and actuation. A promising strategy relies on the utilization of magnetoelectric composites to finely tune the interplay between electric and magnetic degrees of freedom at the interface of two functional materials. Albeit early works predominantly focused on the magnetoelectric coupling at solid/solid interfaces; however, recently there has been an increased interest related to the opportunities offered by liquid‐gating techniques. Here, a comparative overview on voltage control of magnetism in all‐solid‐state and solid/liquid composites is presented within the context of the principal coupling mediators, i.e., strain, charge carrier doping, and ionic intercalation. Further, an exhaustive and critical discussion is carried out, concerning the suitability of using the common definition of coupling coefficient α C = Δ M Δ E to compare the strength of the interaction between electricity and magnetism among different magnetoelectric systems.  相似文献   

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Finding an energy-efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin-polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8 nm)/Co (0.65 nm)/Pt (2.5 nm)/PN Si heterojunction in an energy-efficient manner is proposed. The coercive field (HC) is altered from 261 to 95 Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140 Oe magnetic bias assistant. The element-resolved X-ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron-induced redistribution of the orbital and spin moment in Co magnetization. The first-principle calculations also reveal that the photo-induced electrons shift the Fermi level of electrons and enhance the in-plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding HC decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current.  相似文献   

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Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated.  相似文献   

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Field‐effect transistors with ionic‐liquid gating (ILG) have been widely employed and have led to numerous intriguing phenomena in the last decade, due to the associated excellent carrier‐density tunability. However, the role of the electrochemical effect during ILG has become a heavily debated topic recently. Herein, using ILG, a field‐induced insulator‐to‐metal transition is achieved in WO3 thin films with the emergence of structural transformations of the whole films. The subsequent secondary‐ion mass spectrometry study provides solid evidence that electrochemically driven hydrogen evolution dominates the discovered electrical and structural transformation through surface absorption and bulk intercalation.  相似文献   

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Topological Hall effect (THE), appearing as bumps and/or dips in the Hall resistance curves, is considered as a hallmark of the skyrmion spin texture originated from the inversion symmetry breaking and spin–orbit interaction. Recently, Néel‐type skyrmion is proposed based on the observed THE in 5d transition metal oxides heterostructures such as SrRuO3/SrIrO3 bilayers, where the interfacial Dzyaloshinskii–Moriya interaction (DMI), due to the strong spin–orbit coupling (SOC) in SrIrO3 and the broken inversion symmetry at the interface, is believed to play a significant role. Here the emergence of THE in SrRuO3 single layers with thickness ranging from 3 to 6 nm is experimentally demonstrated. It is found that the oxygen octahedron rotation in SrRuO3 also has a significant effect on the observed THE. Furthermore, the THE may be continuously tuned by an applied electrical field. It is proposed that the large SOC of Ru ions together with the broken inversion symmetry, mainly from the interface, produce the DMI that is responsible for the observed THE. The emergence of the gate‐tunable DMI in SrRuO3 single layer may stimulate further investigations of new spin–orbit physics in strong SOC oxides.  相似文献   

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Tailoring the magnetic properties of ordered arrays of patterned structures usually requires stringent control of their size, pitch, microstructure, and composition. Here, a fundamentally different approach to manipulate the magnetic behavior of lithographed microdisks, based on the application of electrical voltage, is demonstrated. First, highly porous iron oxide films with virtually no magnetic response (OFF state) are grown by sol–gel chemistry. Subsequently, arrays of microdisks (8 µm in diameter) are obtained combining lithography with wet chemical etching processes. Electrolyte‐gating (with an anhydrous electrolyte) is then employed to induce a tunable (i.e., “on‐demand”) ferromagnetic response in these disks (OFF–ON switching of magnetism) at room temperature. The changes in magnetic properties are attributed to magnetoelectrically‐driven oxygen ion migration, which is enhanced due to nanoporosity. This causes partial reduction of the oxide phases to metallic Fe. The effect can be considerably reversed by applying voltage of opposite polarity. These results are appealing for diverse technological applications that require the use of patterned structures with easily tunable magnetic properties, such as magnetic micro‐electro‐mechanical systems, microfluidic, and lab‐on‐a‐chip platforms for biomedical therapies and, ultimately, energy‐efficient magnetic memories or neuromorphic computing.  相似文献   

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Composite bilayer multiferroics combining ferroelectric (FE) and ferromagnetic (FM) thin‐film materials in a heterostructure and exhibiting magnetoelectric (ME) coupling effect are of great scientific and technological interest. In particular, electronically driven ME coupling implies that the FE polarization orientation affects the magnetic properties of FM at the interface with FE. Unlike metals, where the electric field penetrates over distances of 1–2 unit cells only, magnetic semiconductors, particularly doped EuS, with a ≈10 nm screening length appear a viable alternative. In addition, EuS exhibits a metal–insulator transition, thus offering new functionalities in nanoelectronics. Meanwhile, ultrathin polycrystalline films of doped HfO2, such as Hf0.5Zr0.5O2 (HZO), stabilized in the noncentrosymmetric orthorhombic phase, are identified as a novel class of robust FE materials. In this work, FM EuS integrated with FE HZO in a bilayered structure is promoted as a prospective composite multiferroic. The functionality of both ultrathin FM‐EuS and FE‐HZO layers as well as their compatibility in a capacitor configuration is demonstrated. The comprehensive information on the structural, chemical, and electronic properties of EuS/HZO interface endorses it as a promising medium for magnetoelectric coupling phenomena, particularly, the effect of polarization reversal in FE‐HZO on the magnetic and transport properties in EuS.  相似文献   

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