High‐Efficiency Solution‐Processed Inorganic Metal Halide Perovskite Light‐Emitting Diodes

This paper reports highly bright and efficient CsPbBr₃ perovskite light‐emitting diodes (PeLEDs) fabricated by simple one‐step spin‐coating of uniform CsPbBr₃ polycrystalline layers on a self‐organized buffer hole injection layer and stoichiometry‐controlled CsPbBr₃ precursor solutions with an optimized concentration. The PeLEDs have maximum current efficiency of 5.39 cd A^?1 and maximum luminance of 13752 cd m^?2. This paper also investigates the origin of current hysteresis, which can be ascribed to migration of Br^? anions. Temperature dependence of the electroluminescence (EL) spectrum is measured and the origins of decreased spectrum area, spectral blue‐shift, and linewidth broadening are analyzed systematically with the activation energies, and are related with Br^? anion migration, thermal dissociation of excitons, thermal expansion, and electron–phonon interaction. This work provides simple ways to improve the efficiency and brightness of all‐inorganic polycrystalline PeLEDs and improves understanding of temperature‐dependent ion migration and EL properties in inorganic PeLEDs.     

Morphology Engineering for High‐Performance and Multicolored Perovskite Light‐Emitting Diodes with Simple Device Structures

The film morphology is extremely significant for solution processed perovskite devices. Through fine morphology engineering without using any additives or further posttreatments, a full‐coverage and high quantum yield perovskite film has been achieved based on one‐step spin‐coating method. The morphologies and film characteristics of MAPbBr₃ with different MABr:PbBr₂ starting material ratios are in‐depth investigated by scanning electron microscopy, atomic force microscopy, X‐ray diffraction, photoluminescence, and time resolved photoluminescence. High performance organometal halide perovskite light‐emitting didoes (PeLEDs) based on simple device structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/perovskite/TPBi/Ca/Al are demonstrated. The green PeLED based on MAPbBr₃ shows a maximum luminance of 8794 cd m^?2 (at 7.3 V) and maximum current efficiency of 5.1 cd A^?1 (at 5.1 V). Furthermore, a class of hybrid PeLEDs by adjusting the halide ratios of methylammonium lead halide (MAPbX₃, where X is Cl, Br, or I) are also demonstrated at room temperature. These mix‐halogenated PeLEDs show bright luminance (above 100 cd m^?2) with narrow and clean emission bands over the wide color gamut.     

High‐Efficiency Perovskite Light‐Emitting Diodes with Synergetic Outcoupling Enhancement

Perovskite light‐emitting diodes (PeLEDs) show great application potential in high‐quality flat‐panel displays and solid‐state lighting due to their steadily improved efficiency, tunable colors, narrow emission peak, and easy solution‐processing capability. However, because of high optical confinement and nonradiative charge recombination during electron–photon conversion, the highest reported efficiency of PeLEDs remains far behind that of their conventional counterparts, such as inorganic LEDs, organic LEDs, and quantum‐dot LEDs. Here a facile route is demonstrated by adopting bioinspired moth‐eye nanostructures at the front electrode/perovskite interface to enhance the outcoupling efficiency of waveguided light in PeLEDs. As a result, the maximum external quantum efficiency and current efficiency of the modified cesium lead bromide (CsPbBr₃) green‐emitting PeLEDs are improved to 20.3% and 61.9 cd A^?1, while retaining spectral and angular independence. Further reducing light loss in the substrate mode using a half‐ball lens, efficiencies of 28.2% and 88.7 cd A^?1 are achieved, which represent the highest values reported to date for PeLEDs. These results represent a substantial step toward achieving practical applications of PeLEDs.     

A Strategy for Architecture Design of Crystalline Perovskite Light‐Emitting Diodes with High Performance

All present designs of perovskite light‐emitting diodes (PeLEDs) stem from polymer light‐emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, “insulator–perovskite–insulator” (IPI) architecture tailored to PeLEDs. As examples of FAPbBr₃ and MAPbBr₃, it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr₃, a 30‐fold enhancement in the current efficiency of IPI‐structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole‐injection layer is achieved—from 0.64 to 20.3 cd A^?1—while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr₃, compared with the control device, both current efficiency and lifetime of IPI‐structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A^?1 and 96 h. This IPI architecture represents a novel strategy for the design of light‐emitting didoes based on various perovskites with high efficiencies and stabilities.     

High‐Performance Inverted Planar Perovskite Solar Cells Enhanced by Thickness Tuning of New Dopant‐Free Hole Transporting Layer

A new hole transporting material (HTM) named DMZ is synthesized and employed as a dopant‐free HTM in inverted planar perovskite solar cells (PSCs). Systematic studies demonstrate that the thickness of the hole transporting layer can effectively enhance the morphology and crystallinity of the perovskite layer, leading to low series resistance and less defects in the crystal. As a result, the champion power conversion efficiency (PCE) of 18.61% with J_SC = 22.62 mA cm^?2, V_OC = 1.02 V, and FF = 81.05% (an average one is 17.62%) is achieved with a thickness of ≈13 nm of DMZ (2 mg mL^?1) under standard global AM 1.5 illumination, which is ≈1.5 times higher than that of devices based on poly(3,4‐ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT:PSS). More importantly, the devices based on DMZ exhibit a much better stability (90% of maximum PCE retained after more than 556 h in air (relative humidity ≈ 45%–50%) without any encapsulation) than that of devices based on PEDOT:PSS (only 36% of initial PCE retained after 77 h in same conditions). Therefore, the cost‐effective and facile material named DMZ offers an appealing alternative to PEDOT:PSS or polytriarylamine for highly efficient and stable inverted planar PSCs.     

Air‐Stable and High‐Performance Solution‐Processed Organic Light‐Emitting Devices Based on Hydrophobic Polymeric Ionic Liquid Carrier‐Injection Layers

A lot of research, mostly using electron‐injection layers (EILs) composed of alkali‐metal compounds has been reported with a view to increase the efficiency of solution‐processed organic light‐emitting devices (OLEDs). However, these materials have intractable properties, such as a strong affinity for moisture, which cause the degradation of OLEDs. Consequently, optimal EIL materials should exhibit high electron‐injection efficiency as well as be stable in air. In this study, polymer light‐emitting devices (PLEDs) based on the commonly used yellow‐fluorescence‐emitting polymer F8BT, which utilize poly(diallyldimethylammonium)‐based polymeric ionic liquids, are experimentally and analytically investigated. As a result, the optimized PLED employing an EIL comprising poly(diallyldimethylammonium) bis(trifluoromethanesulfonyl)imide (poly(DDA)TFSI), which is expected to display good moisture resistance because of water repellency of fluorocarbon groups, exhibits excellent storage stability in air and electroluminescence performance with a low turn‐on voltage of 2.01 V, maximum external quantum efficiency of 9.00%, current efficiency of 30.1 cd A^?1, and power efficiency of 32.4 lm W^?1. The devices with poly(DDA)TFSI show one of the highest efficiencies as compared to the reported standard PLEDs. Moreover, poly(DDA)TFSI is applied as a hole‐injection layer (HIL). The optimized PLED using poly(DDA)TFSI as the HIL exhibits performances comparable to those of a device that uses a conventional poly(3,4‐ethylenedioxy‐thiophene):poly(4‐styrenesulfonate) HIL.     

Highly Efficient p‐i‐n Perovskite Solar Cells Utilizing Novel Low‐Temperature Solution‐Processed Hole Transport Materials with Linear π‐Conjugated Structure

Alternative low‐temperature solution‐processed hole‐transporting materials (HTMs) without dopant are critical for highly efficient perovskite solar cells (PSCs). Here, two novel small molecule HTMs with linear π‐conjugated structure, 4,4′‐bis(4‐(di‐p‐toyl)aminostyryl)biphenyl (TPASBP) and 1,4′‐bis(4‐(di‐p‐toyl)aminostyryl)benzene (TPASB), are applied as hole‐transporting layer (HTL) by low‐temperature (sub‐100 °C) solution‐processed method in p‐i‐n PSCs. Compared with standard poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonic acid) (PEDOT:PSS) HTL, both TPASBP and TPASB HTLs can promote the growth of perovskite (CH₃NH₃PbI₃) film consisting of large grains and less grain boundaries. Furthermore, the hole extraction at HTL/CH₃NH₃PbI₃ interface and the hole transport in HTL are also more efficient under the conditions of using TPASBP or TPASB as HTL. Hence, the photovoltaic performance of the PSCs is dramatically enhanced, leading to the high efficiencies of 17.4% and 17.6% for the PSCs using TPASBP and TPASB as HTL, respectively, which are ≈40% higher than that of the standard PSC using PEDOT:PSS HTL.     

Ultrahigh‐Efficiency Green PHOLEDs with a Voltage under 3 V and a Power Efficiency of Nearly 110 lm W−1 at Luminance of 10 000 cd m−2

Maintaining high power efficiency (PE) under high brightness is still a pressing problem for the practical application of organic light‐emitting diodes (OLEDs). Here, ultrahigh‐efficiency green phosphorescent OLEDs (PHOLEDs) with a record‐low voltage at luminance above 5000 cd m^?2 are fabricated, by developing a novel anthracene/pyridine derivative as the electron‐transporting material (ETM) combined with a material displaying thermally activated delayed fluorescence as the host. The pyridine units of the ETM not only facilitate charge injection, but also enhance the electron‐transporting mobility, profiting from the closely packed molecules caused by the intermolecular H‐bonding. The optimized green PHOLEDs show record‐low driving voltages of 2.76 and 2.92 V, with EQEs/PEs of 28.0%/102 lm W^?1 and 27.9%/97 lm W^?1 at 5000 and 10 000 cd m^?2, respectively. Furthermore, device optimization exhibits an unprecedented high PE of 109 lm W^?1 at 10 000 cd m^?2 with voltage under 3 V. Those values are the state‐of‐the‐art among all reported green OLEDs so far, paving their way toward practical applications.     

Extremely Vivid,Highly Transparent,and Ultrathin Quantum Dot Light‐Emitting Diodes

Displaying information on transparent screens offers new opportunities in next‐generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see‐through” displays to show vivid images over clear background view. Here transparent quantum dot light‐emitting diodes (Tr‐QLEDs) are reported with high brightness (bottom: ≈43 000 cd m^?2, top: ≈30 000 cd m^?2, total: ≈73 000 cd m^?2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr‐QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr‐QLEDs (513 pixels in.^?1) shows the potential of the full‐color transparent display.     

Versatile Indolocarbazole‐Isomer Derivatives as Highly Emissive Emitters and Ideal Hosts for Thermally Activated Delayed Fluorescent OLEDs with Alleviated Efficiency Roll‐Off

Maintaining high efficiency at high brightness levels is an exigent challenge for real‐world applications of thermally activated delayed fluorescent organic light‐emitting diodes (TADF‐OLEDs). Here, versatile indolocarbazole‐isomer derivatives are developed as highly emissive emitters and ideal hosts for TADF‐OLEDs to alleviate efficiency roll‐off. It is observed that photophysical and electronic properties of these compounds can be well modulated by varying the indolocarbazole isomers. A photoluminescence quantum yield (η_PL) approaching unity and a maximum external quantum efficiency (EQE_max) of 25.1% are obtained for the emitter with indolo[3,2‐a]carbazolyl subunit. Remarkably, record‐high EQE/power efficiency of 26.2%/69.7 lm W^?1 at the brightness level of 5000 cd m^?2 with a voltage of only 3.74 V are also obtained using the same isomer as the host in a green TADF‐OLED. It is evident that TADF hosts with high η_PL values, fast reverse intersystem crossing processes, and balanced charge transport properties may open the path toward roll‐off‐free TADF‐OLEDs.     

High Performance Quasi‐2D Perovskite Sky‐Blue Light‐Emitting Diodes Using a Dual‐Ligand Strategy

For quasi‐2D perovskite light‐emitting diodes, the introduction of insulating bulky cation reduces the charge transport property, leading to lowered brightness and increased turn‐on voltage. Herein, a dual‐ligand strategy is adopted to prepare perovskite films by using an appropriate ratio of i‐butylammonium (iBA) and phenylethylammonium (PEA) as capping ligands. The introduction of iBA enhances the binding energy of the ligands on the surface of the quasi‐2D perovskite, and effectively controls the proportion of 2D perovskite to allow more efficient energy transfer, resulting in the great enhancement of the electric and luminescent properties of the perovskite. The photoluminescence (PL) mapping of the perovskite films exhibits that enhanced photoluminescence performance with better uniformity and stronger intensity can be achieved with this dual‐ligand strategy. By adjusting the proportion of the two ligands, sky‐blue perovskite light‐emitting diodes (PeLEDs) with electroluminescence (EL) peak located 485 nm are achieved with a maximum luminance up to 1130 cd m^?2 and a maximum external quantum efficiency (EQE) up to 7.84%. In addition, the color stability and device stability are significantly enhanced by using a dual‐ligand strategy. This simple and feasible method paves the way for improving the performance of quasi‐2D PeLEDs.     

Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite Light-Emitting Diodes

Solution-processed perovskite-based light-emitting diodes (PeLEDs) are promising candidates for low-cost, large-area displays, while severe deterioration of the perovskite light-emitting layer occurs during deposition of electron transport layers from solution in an issue. Herein, core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer in PeLED based on quasi-2D PEA₂Cs_n−1Pb_nBr_3n+1 (PEA = phenylethylammonium) perovskite are employed. The deposition of ZnS shell mitigates trap states on ZnO core by anchoring sulfur to oxygen vacancies, and at the same time removes residual hydroxyl groups, which helps to suppress the interfacial trap-assisted non-radiative recombination and the deprotonation reaction between the perovskite layer and ZnO. The core/shell ZnO/ZnS nanoparticles show comparably high electron mobility to pristine ZnO nanoparticles, combined with the reduced energy barrier between the electron transport layer and the perovskite layer, improving the charge injection balance in PeLEDs. As a result, the optimized PeLEDs employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer exhibit high peak luminance reaching 32 400 cd m⁻², external quantum efficiency of 10.3%, and 20-fold extended longevity as compared to the devices utilizing ZnO nanoparticles, which represents one of the highest overall performances for solution-processed PeLEDs.     

A Highly Efficient Non‐Fullerene Organic Solar Cell with a Fill Factor over 0.80 Enabled by a Fine‐Tuned Hole‐Transporting Layer

With rapid development for tens of years, organic solar cells (OSCs) have attracted much attention for their potential in practical applications. As an important photovoltaic parameter, the fill factor (FF) of OSCs stands for the effectiveness of charge generation and collection, which significantly depends on the properties of the interlayer and active layer. Here, a facile and effective strategy to improve the FF through hole‐transporting layer (HTL) modification is demonstrated. By mixing WO_x nanoparticles with a poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) emulsion, the surface free energy of the HTL is improved and the morphology of the active layer is optimized. Benefiting from increased carrier lifetime, a device based on WO_x:PEDOT:PSS HTL exhibits a boosted performance with an FF of 80.79% and power conversion efficiency of 14.57% PCE. The results are certified by the National Institute of Metrology (NIM), which, to date, are the highest values in this field with certification. This work offers a simple and viable option of HTL modification to realize highly efficient OSCs.     

Fabrication of efficient polymer light-emitting diodes using water/alcohol soluble poly(vinyl alcohol) doped with alkali metal salts as electron-injection layer

An effective electron-injection layer (EIL) is crucial to efficient polymer light-emitting diodes (PLEDs) with high work-function metal as cathode. This work presents the use of water/alcohol soluble poly(vinyl alcohol) (PVA), especially doped with alkali metal salts, as a highly effective EIL to fabricate efficient multilayer PLEDs, allowing the use of stable aluminum as the cathode. Using neat PVA as EIL, the maximum brightness and maximum current efficiency of the device [ITO/PEDOT:PSS/SY/PVA/Al(90 nm)] were significantly enhanced to 5518 cd/m² and 2.64 cd/A (from 395 cd/m² and 0.06 cd/A without the EIL) due to promoted electron-injection and hole-blocking. The device performance is further enhanced by doping the PVA with alkali metal salts (M₂CO₃ or CH₃COOM; M: Na, K, Cs), and the enhancement is increased with increasing dopant concentration. Particularly, the PVA doped with 30 wt% alkali metal carbonates revealed the best performance (20214–25163 cd/m², 5.83–6.83 cd/A). This has been attributed to improved electron-injection from aluminum cathode, which has been confirmed by the corresponding increase in the open-circuit voltages (V _oc) obtained from photovoltaic measurements. Current results indicate that commercially available PVA are promising electron-injection layer for PLEDs when doped with appropriate alkali metal salts.     

Conjugated Polyelectrolytes as Multifunctional Passivating and Hole‐Transporting Layers for Efficient Perovskite Light‐Emitting Diodes

Metal halide perovskites (MHPs) have attracted significant attention as light‐emitting materials owing to their high color purities and tunabilities. A key issue in perovskite light‐emitting diodes (PeLEDs) is the fabrication of an optimal charge transport layer (CTL), which has desirable energy levels for efficient charge injection while blocking opposite charges and enabling perovskite layer growth with reduced interfacial defects. Herein, two poly(fluorene‐phenylene)‐based anionic conjugated polyelectrolytes (CPEs) with different counterions (K⁺ and tetramethylammonium (TMA⁺)) are presented as multifunctional passivating and hole‐transporting layers (HTLs). The crystal growth of MHPs grown on different HTLs is investigated through X‐ray photoelectron spectroscopy, X‐ray diffraction, and density functional theory calculation. The CPE bearing the TMA⁺ counterions remarkably improves the growth of perovskites with suppressed interfacial defects, leading to significantly enhanced emission properties and device performance. The luminescent properties are further enhanced via aging and electrical stress application with effective rearrangement of the counterions on the interfacial defects in the perovskites. Finally, efficient formamidinium lead tribromide‐based quasi‐2D PeLEDs with an external quantum efficiency of 10.2% are fabricated. Using CPEs with varying counterions as a CTL can serve as an effective method for controlling the interfacial defects and improving perovskite‐based optoelectronic device properties.     

Highly efficient orange–red electroluminescence from a single layer MEH-PPV-POSS:CdS0.75Se0.25 hybrid PLED

In this study, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] end capped with polyhedral oligomeric silsesquioxanes (MEH-PPV-POSS): cadmium sulfide selenide quantum dots (CdS_0.75Se_0.25 QDs) nanocomposites based OLEDs were fabricated. By the addition of CdS_0.75Se_0.25 QDs into the polymer active layer, a considerable enhancement was observed in terms of hole and electron injection in devices. Additionally, the presence of QDs reduced the interchain interaction of polymer that resulted in narrower electroluminescence (EL) spectrum. The device structure of ITO/PEDOT: PSS/MEH-PPV-POSS: 25 wt% CdS_0.75Se_0.25/Ca (40 nm)/Al demonstrated the best performance with a brightness of 8672 cd/m² at 10 V, current efficiency of 2.5 cd/A at 8 V, and an EQE of 0.55% at 150 mA/cm².     

Toxicological Aspects of Long‐Term Treatment of Keratinocytes with ZnO and TiO2 Nanoparticles

Sunscreens containing ZnO and TiO₂ nanoparticles (NPs) are increasingly applied to skin over long time periods to reduce the risk of skin cancer. However, long‐term toxicological studies of NPs are very sparse. The in vitro toxicity of ZnO and TiO₂ NPs on keratinocytes over short‐ and long‐term applications is reported. The effects studied are intracellular formation of radicals, alterations in cell morphology, mitochondrial activity, and cell‐cycle distribution. Cellular response depends on the type of NP, concentration, and exposure time. ZnO NPs have more pronounced adverse effects on keratinocytes than TiO₂. TiO₂ has no effect on cell viability up to 100 μg mL^?1, whereas ZnO reduces viability above 15 μg mL^?1 after short‐term exposure. Prolonged exposure to ZnO NPs at 10 μg mL^?1 results in decreased mitochondrial activity, loss of normal cell morphology, and disturbances in cell‐cycle distribution. From this point of view TiO₂ has no harmful effect. More nanotubular intercellular structures are observed in keratinocytes exposed to either type of NP than in untreated cells. This observation may indicate cellular transformation from normal to tumor cells due to NP treatment. Transmission electron microscopy images show NPs in vesicles within the cell cytoplasm, particularly in early and late endosomes and amphisomes. Contrary to insoluble TiO₂, partially soluble ZnO stimulates generation of reactive oxygen species to swamp the cell redox defense system thus initiating the death processes, seen also in cell‐cycle distribution and fluorescence imaging. Long‐term exposure to NPs has adverse effects on human keratinocytes in vitro, which indicates a potential health risk.     

Ultrahigh‐Conductivity Polymer Hydrogels with Arbitrary Structures

A poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) hydrogel is prepared by thermal treatment of a commercial PEDOT:PSS (PH1000) suspension in 0.1 mol L^?1 sulfuric acid followed by partially removing its PSS component with concentrated sulfuric acid. This hydrogel has a low solid content of 4% (by weight) and an extremely high conductivity of 880 S m^?1. It can be fabricated into different shapes such as films, fibers, and columns with arbitrary sizes for practical applications. A highly conductive and mechanically strong porous fiber is prepared by drying PEDOT:PSS hydrogel fiber to fabricate a current‐collector‐free solid‐state flexible supercapacitor. This fiber supercapacitor delivers a volumetric capacitance as high as 202 F cm^?3 at 0.54 A cm^?3 with an extraordinary high‐rate performance. It also shows excellent electrochemical stability and high flexibility, promising for the application as wearable energy‐storage devices.     

Enhancing the Performance of the Half Tin and Half Lead Perovskite Solar Cells by Suppression of the Bulk and Interfacial Charge Recombination

In this article it is investigated how the hole extraction layer (HEL) influence the charge recombination and performance in half tin and half lead (FASn_0.5Pb_0.5I₃) based solar cells (HPSCs). FASn_0.5Pb_0.5I₃ film grown on PEDOT:PSS displays a large number of pin‐holes and open grain boundaries, resulting in a high defect density and shunts in the perovskite film causing significant bulk and interfacial charge recombination in the HPSCs. By contrast, FASn_0.5Pb_0.5I₃ films grown on PCP‐Na, an anionic conjugated polymer, show compact and pin‐hole free morphology over a large area, which effectively eliminates the shunts and trap states. Moreover, PCP‐Na is characterized by a higher work function, which determines a favorable energy alignment at the anode interface, enhancing the charge extraction. Consequently, both the interfacial and bulk charge recombination in devices using PCP‐Na HEL are considerably reduced giving rise to an overall improvement of all the device parameters. The HPSCs fabricated with this HEL display power conversion efficiency up to 16.27%, which is 40% higher than the efficiency of the control devices using PEDOT:PSS HEL (11.60%). Furthermore, PCP‐Na as HEL offers superior performance in larger area devices compared to PEDOT:PSS.     

Room‐Temperature Solution‐Synthesized p‐Type Copper(I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics

Here, room‐temperature solution‐processed inorganic p‐type copper iodide (CuI) thin‐film transistors (TFTs) are reported for the first time. The spin‐coated 5 nm thick CuI film has average hole mobility (µ_FE) of 0.44 cm² V^?1 s^?1 and on/off current ratio of 5 × 10². Furthermore, µ_FE increases to 1.93 cm² V^?1 s^?1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO₂ dielectric layer replacing traditional SiO₂. Transparent complementary inverters composed of p‐type CuI and n‐type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution‐processed inorganic p‐type semiconductor inks and related electronics.