掺砷多晶硅边缘场发射阴极阵列的特性研究

提出了一种Ｔ形结构的边缘场发射阴极，它具有比通常的场发射体的发射面积大得多的特点。首次采用低压化学气相沉积技术生长内层重掺砷、外层轻掺砷的多晶硅薄膜；     

边缘场发射体的非正交有限差分算法模拟

对边缘场致发射三极管进行了模拟，采用的模型为“鸡尾酒怀”结构。在静电分析中引入了一种新的数值计算方法－非正交曲线坐标系下的有限差分算法。由于取的坐标轴与边界重合，所以该方法能有效地处理任间形状的场致发射体。     

Si-TaSi2场发射阴极阵列制备工艺的研究

Si-TaSi2共晶自生复合材料由于具有较低的功函数、良好的电传输特性和自生三维肖特基结等特点,被认为是具有良好应用前景的场致发射材料之一.依据选择性腐蚀的原理,把电子束区熔技术制备的Si-TaSi2共晶自生复合材料制作为Si-TaSi2场发射阴极阵列.对影响选择性腐蚀工艺的两个因素:腐蚀时间和腐蚀液配比进行了系统的研究.研究表明,随着腐蚀时间的延长,TaSi2尖锥的曲率半径减小,长径比增大;制备Si-TaSi2场发射阴极阵列的最佳腐蚀液配比是浓硝酸和浓氢氟酸的体积比v(HNO3)∶v(HF)=4∶1,最佳的腐蚀时间是20～30min.采用透明阳极法对制备的Si-TaSi2阴极阵列进行了场发射性能的测试,结果表明该腐蚀工艺制作的Si-TaSi2阴极阵列有较好的场发射性能.     

碳纳米管/聚四氟乙烯复合材料场发射特性研究

通过催化热解法制备了碳纳米管,采用机械共混法制作了碳纳米管/聚四氟乙烯复合材料场发射阴极,研究了不同碳纳米管质量分数对复合材料阴极场发射特性的影响,通过制作的封装结构,对比研究了真空环境下碳纳米管/聚四氟乙烯与碳纳米管/环氧树脂复合材料的场发射特性,证明碳纳米管/聚四氟乙烯复合材料更适用于场发射阴极的真空环境中,可以满足场发射显示器件的要求.     

边缘场致发射体的非正交有限差分算法模拟

对边缘切致发射三极管进行了模拟，采用的模型为“鸡尾酒杯”结构。在静电分析中引入了一种新的数值计算方法──非正交曲线坐标系下的有限差分算法。由于取的坐标轴与边界重合。所以该方法能有效地处理任意形状的场致发射体。给出了电场强度和发射电流与几何因子的关系及I－U特性曲线。     

玻璃上低温沉积碳纳米管薄膜及其场发射研究

本文从事的研究是碳纳米管(CNT)薄膜的制备及场发射效果分析。在普通玻璃衬底上用磁控溅射方法镀上金属钛层,用含铁杂质的碳化硅微粒对钛层进行抛光。利用微波等离子体化学气相沉积法,在小于500℃衬底温度下快速制备出CNT膜。通过扫描电子显微镜、拉曼光谱,分析了薄膜的表面形貌和结构特性。通过二级管结构测试了聚晶膜的场致电子发射特性,对于制备的碳膜,在电场?时,最大场发射电流密度达?。并对其发射机理进行了研究。     

应用于场致发射的掺杂纳米金刚石膜的研究

场致发射是一种新型显示技术,具有良好应用前景,场发射显示器的核心内容是场发射阴极材料,纳米金刚石由于低表面粗糙度、低场发射强度、高发射电流密度、大比表面积、网状结构以及高密度悬挂键等优秀电化学性能成为场发射的理想阴极材料.本文阐述了化学气相沉积法制备纳米金刚石薄膜的沉积装置、预处理和工艺参数,并介绍了金刚石掺杂机理和掺入元素的研究现状.     

场发射阵列的热电模型

场发射阵列的主要失效机制是真空电弧。本文先概括了真空电弧的现象，然后描述了一个放电损伤的热电模型。说明了造成损伤的材料量，能量，功率，时间范围和能量来源。根据这个模型，提出了对真空电弧可能采取的各种技术措施。     

氧化锡薄膜场致发射研究

利用直流磁控反应溅射法,制备氧化锡薄膜,利用扫描电镜等方法对氧化锡薄膜微观结构进行分析。在低真空下,对不同厚度的氧化锡薄膜进行场致发射测试,结果显示,在氧化锡薄膜厚度为60nm时,场致发射性能最佳,当电流密度为10μA/m2时,开启电压为4.5 V/μm,阴阳两极电场为7 V/μm时,有较佳的场发射密度,同时发光亮度达到2180 cd/m2,结果表明,氧化锡薄膜在场发射平板显示及真空电子器件方面具有较好的应用潜力。     

平板显示用场发射冷阴极材料

简要介绍了场致发射显示器件的结构和原理,全面总结了人们正在研究的各种场发射冷阴极材料,其中主要包括金属场致发射阵列、硅场致发射阵列、金刚石及其相关薄膜、碳纳米管和纳米纤维、一维纳米材料、碳化物、氮化物薄膜等.并展望了场致发射显示器件的发展前景.     

多晶金刚石锥状场发射阵列冷阴极研究

本文报导了一种新型金刚石场发射阵列冷阴极的制造方法和电子发射性能，通过数据分析得到了这种金刚石发射体的有效表面功函数和总有效发射面积。并与用其它方法获得的几种膜的发射性能作了比较。测量结果表明，这是一种很有应用潜力的制造方法。     

Self‐Organized Graphene Nanosheets with Corrugated,Ordered Tip Structures for High‐Performance Flexible Field Emission

Patterned reduced graphene oxide (rGO) films with vertically aligned tip structures are fabricated by a straightforward self‐assembly method. The size, uniformity of the patterns, and alignment of the tips are successfully controlled according to the concentration of a GO/octadecylamine (ODA)‐dispersed solution. The surface energy difference between the GO/ODA solution and a self‐assembled water droplet is a critical parameter for determining the pattern structure. Numerous rGO nanosheets are formed so as to be vertically aligned with respect to the substrate during film fabrication at GO concentrations below 2.0 g/L. These samples provide high field‐emission characteristics. The patterned rGO arrays are highly flexible with preservation of the field emission properties, even at large bending angles. This is attributed to the high crystallinity, emitter density, and good chemical stability of the rGO arrays, as well as the strong interactions between the rGO arrays and the substrate.     

电泳和电镀法增强碳纳米管场发射特性的研究

碳纳米管(CNT)和衬底的电学接触问题是获得高性能CNT电子器件的一个关键性的问题。本文采用电泳电镀方法制备CNT冷阴极,有效改善了CNT与衬底间接触电阻,增强了碳纳米管场发射性能。电泳电镀法制备的碳纳米管冷阴极场发射的开启电场(电流密度为10μA.cm-2时的电场)由2.95 V.μm-1降低到1.0V.μm-1,在电场为8V.μm-1时电流密度由0.224增加到0.8112mA.cm-2。在电流密度为800μA.cm-2时进行1h的场发射稳定性测试,结果表明,电泳电镀法所得CNT场发射电子源电流密度几乎不变,而且电流密度比较稳定;而只有电泳的方法获得的CNT场发射电子源电流密度波动较大,电流不稳定且呈较快的衰减趋势,1h后减少到原来的75%。采用电泳电镀方法制备CNT阴极,CNT的根部被纳米银颗粒覆盖和包裹,使CNT与衬底接触更加牢固而紧密,又由于银具有很好的导电性,从而大大减小了接触电阻,因此电泳电镀法能大大改善CNT与衬底的电学接触性能。     

Flexible field emission of nitrogen-doped carbon nanotubes/reduced graphene hybrid films

The outstanding flexible field emission properties of carbon hybrid films made of vertically aligned N-doped carbon nanotubes grown on mechanically compliant reduced graphene films are demonstrated. The bottom-reduced graphene film substrate enables the conformal coating of the hybrid film on flexible device geometry and ensures robust mechanical and electrical contact even in a highly deformed state. The field emission properties are precisely examined in terms of the control of the bending radius, the N-doping level, and the length or wall-number of the carbon nanotubes and analyzed with electric field simulations. This high-performance flexible carbon field emitter is potentially useful for diverse, flexible field emission devices.     

有电子束聚焦作用的场发射阵列

讨论了对发射电子束具有聚焦作用的场发射阵列 ,并制作了样管。为了抑制发射电子束的发散 ,采用电子束聚焦的方法。文中给出了三种结构的聚焦方案 ,开发的透明电阻层Ni SiO2 保证了聚焦孔的刻蚀精度     

New-type planar field emission display with superaligned carbon nanotube yarn emitter

With the superaligned carbon nanotube yarn as emitter, we have fabricated a 16 × 16 pixel field emission display prototype by adopting screen printing and laser cutting technologies. A planar diode field emission structure has been adopted. A very sharp carbon nanotube yarn tip emitter can be formed by laser cutting. Low voltage phosphor was coated on the anode electrodes also by screen printing. With a specially designed circuit, we have demonstrated the dynamic character display with the field emission display prototype. The emitter material and fabrication technologies in this paper are both easy to scale up to large areas.     

Electron-emission properties of carbon nanotube micro-tips coated by amorphous carbon nitride films

An approach to the preparation of a tip-type of field emitter that is made up of carbon nanotubes (CNTs) coated with amorphous carbon nitride (a-CN_x) films is presented for the purpose of enhancing its electron emission property. CNTs were directly grown on nano-sized conical-type tungsten tips via the inductively coupled plasma-chemical vapor deposition system, and a-CN_x films were coated on the CNTs using an radio frequency magnetron sputtering system. The morphologies and microstructures of the a-CN_x-coated CNTs were analyzed via field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy. The electron emission properties of the a-CN_x/CNT hetero-structures were measured using a high-vacuum field emission measurement system. The best field emission properties, such as a very low turn-on voltage of 500 V and a maximum emission current of 176 μA were achieved for the CNT emitter coated with the 5 nm-thick a-CN_x film. In addition, this emitter showed a highly stable behavior in long-term (up to 25 h) electron emission.     

Emitter spacing effects on field emission properties of laser-treated single-walled carbon nanotube buckypapers

Carbon nanotube (CNT) emitters on buckypaper were activated by laser treatment and their field emission properties were investigated. The pristine buckypapers and CNT emitters' height, diameter, and spacing were characterized through optical analysis. The emitter spacing directly impacted the emission results when the laser power and treatment times were fixed. The increasing emitter density increased the enhanced field emission current and luminance. However, a continuous and excessive increase of emitter density with spacing reduction generated the screening effect. As a result, the extended screening effect from the smaller spacing eventually crippled the field emission effectiveness. Luminance intensity and uniformity of field emission suggest that the highly effective buckypaper will have a density of 2500 emission spots cm(-2), which presents an effective field enhancement factor of 3721 and a moderated screening effect of 0.005. Proper laser treatment is an effective post-treatment process for optimizing field emission, luminance, and durability performance for buckypaper cold cathodes.     

Elektronenfeldemission mit Nanoemitter ohne Begrenzung und Restgas‐Ionisation?

Electron field emission from nano‐emitter without limitation and residual‐gas ionisation? The article is dealing with hyper giant conductivity at room temperature, as published in this journal. The novel material property was explained with a field‐emission measurement of a nano‐emitter. The apparently measured current density of 1.8 GA/cm² has been transferred to the emitter material. But the current density of electron field emission is limited in the range of kA/cm² (FN theory), and so other emission mechanism will be analysed, too. Especially the triplepoint (metal‐insulator‐vacuum) is an excellent field emitter and active over the entire length of cathode edge. Secondary electron emission is increased by the increasing of residualgas ionization and transition to gas discharge will be accelerated. Also, it must be considered that nanorods have a material‐independent quantum resistance in relation to h/e ². There are enough criteria for a metrological and scientifically reviewing.     

石墨烯含量对碳纳米管电极发射器结构和运行稳定性的影响

利用石墨烯电学特性与碳纳米管场发射特性,加入不同含量的石墨烯浆料并对比了各试样场发射特性与器件运行稳定性.实验测试研究结果表明:石墨烯对碳纳米管实现了良好的分隔作用,形成了更大的碳纳米管间隙,降低了电场屏蔽的程度.碳纳米管周围被石墨烯紧密填充,起到了良好的固定作用,能够使碳纳米管获得多级场发射效应.随着石墨烯加入量由2...