U-Boot在S3C2440上的移植方法

Bootloader U-Boot功能齐全、应用广泛但移植到ARM微处理器S3C2440A上相对比较复杂.简介了常见的Bootloader,归纳了U-Boot的主要特征,分析了其运行过程,介绍了系统存储空间分布和基于S3C2440A微处理器为核心自主开发的嵌入式系统板硬件资源配置,给出了U-Boot在嵌入式系统板上的移植方法、移植过程和移植要点.最后对实验结果进行了测试.目前,U-Boot可以完成设计的功能并能够稳定的运行,为下一步移植Linux操作系统奠定了必需的基础.     

U-Boot在基于S3C44B0开发板上的移植

Bootloader是嵌入式系统开发中的第一个环节,它将系统的软硬件紧密联系在一起,其性能的好坏对系统的稳定性有着至关重要的影响.U-Boot功能强大,可移植性好,适合作为S3C4480开发板上引导uCLinux的BootLoader.重点介绍了U-Boot的运行机理,结合代码详细分析了U-Boot的移植方法.并成功地将U-Boot移植到开发板上.     

基于PXA255的U-Boot启动分析及移植

Bootloader在嵌入式系统中是必不可少的重要组成部分,这里使用U-Boot 1.3.0在基于PXA255的嵌入式系统上,构建引导加载程序.在对目标板的硬件资源进行简要说明之后,详细分析了U-Boot的启动流程;接着从参考板的选择、目标板支持文件的建立和相关代码的修改,阐述移植的全过程;最后给出了编译和调试的方法.结果表明,U-Boot能稳定地运行.将U-Boot移植到自制的以PXA255为处理器的目标板上,并能成功引导Linux内核,该目标板已经应用于无线传感器网络的汇聚节点,取得了良好的效果.     

U-Boot在MPC8265平台上的移植与分析

如何根据开发板的硬件资源设计引导加载程序是嵌入式系统设计的重点与难点.为解决引导加栽程序的设计问题,针对一个基于MPC8265处理器的硬件系统平台,分析了U-Boot的源码结构组成和启动流程,并提出U-Boot的移植方法.该方法可广泛应用于其他处理器及嵌入式系统.应用结果表明,移植后的U-Boot-1.2.0在开发板上运行良好,可以成功稳定地引导Linux-2.6内核以及NFS根文件系统.     

U-Boot在AT91RM9200上的移植及启动分析

采用U-Boot 1.1.2构建嵌入式系统的引导加载程序。在对U-Boot的启动工作机理和源码主要函数功能进行了简略分析后,针对基于AT91RM9200的目标板对U-Boot作了具体的修改和移植,并讲述如何设置环境变量,从而引导Linux内核启动。应用结果表明,移植后的U-Boot在目标板上运行良好,可成功引导Linux内核。     

U-Boot的分析与移植

介绍了嵌入式系统中U-Boot的基本工作原理,通过分析U-Boot的程序框架和重要数据结构,在JXARM9-2410-3嵌入式开发板上,实现了嵌入式系统中U-Boot的移植,能够完成嵌入式Linux系统内核的引导和文件系统的加载.     

基于ARM9的BOOTLOADER的设计与实现

本文介绍了一个基于ARM9处理器的嵌入式系统的Bootloader的设计与实现。针对已知的硬件平台和U-Boot的源代码,简述了交叉编译环境的搭建、U-Boot的配置、编译和烧写过程。结果表明,移植后的U-boot在开发板上运行稳定可靠。     

U-Boot在ADSP-BF533上的移植

U-Boot是一个功能十分强大的Bootloader,目前已经运用到很多嵌入式系统中.ADSP-BF533处理器是ADI公司新推出的一款Blackfin系列DSP,详细介绍U-Boot在基于ADSP-BF533处理器嵌入式系统板上移植过程,并深入分析移植过程中的要点和难点:FLASH设备驱动、网卡设备驱动等.此次移植已经成功应用在企业产品的开发中,也可给相关工作的开发者提供参考.     

基于S3C2410A的嵌入式系统的U-Boot移植

嵌入式系统中Bootloader的设计与实现是非常重要的环节,而Bootloader的引导程序中最常用且功能最强大的就是U-Boot。详细分析U-Boot的基本工作原理和运行流程,着重讨论其基于S3C2410A芯片所搭建的在嵌入式系统上的移植。特别选取NAND FLASH作为硬件存储设备,并实现NAND FLASH上的直接启动,完成嵌入式系统中U-boot的移植和Linux系统内核的引导,有助于嵌入式系统的开发。     

基于AT91RM9200的嵌入式ARM开发平台的实现

主要介绍了以Atmel公司的AT91RM9200为核心的ARM硬件平台,以及U-Boot和嵌入式Linux2.6.20内核在此平台上的移植与实现.经实验,移植后的U-Boot以及内核在此开发平台上运行稳定.基于AT91RM9200的嵌入式ARM开发平台的实现无论对教学实验、还是对产品开发都具有实用价值.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.