Preparation and characterization of spray deposited n-type WO3 thin films for electrochromic devices

The n-type tungsten oxide (WO₃) polycrystalline thin films have been prepared at an optimized substrate temperature of 250 °C by spray pyrolysis technique. Precursor solution of ammonium tungstate ((NH₄)₂WO₄) was sprayed onto the well cleaned, pre-heated fluorine doped tin oxide coated (FTO) and glass substrates with a spray rate of 15 ml/min. The structural, surface morphological and optical properties of the as-deposited WO₃ thin films were studied. Mott-Schottky (M-S) studies of WO₃/FTO electrodes were conducted in Na₂SO₄ solution to identify their nature and extract semiconductor parameters. The electrochromic properties of the as-deposited and lithiated WO₃/FTO thin films were analyzed by employing them as working electrodes in three electrode electrochemical cell using an electrolyte containing LiClO₄ in propylene carbonate (PC) solution.     

Preparation of LiMn2O4 thin films by aqueous solution deposition

Cathode material LiMn₂O₄ thin films were prepared by aqueous solution deposition using lithium acetate and manganese acetate as starting materials. The structures, morphologies, and the first discharge specific capacity of the thin films were investigated as a function of annealing temperature and time. The cycling properties of the thin films were also examined. The results show that LiMn₂O₄ thin films prepared by this method are homogenous and crack-free. The thin film annealed at 750°C for 30 min has good rechargeability. The capacity loss per cycle is about 0.05% after being cycled 100 times.     

La0.67Ca0.33MnO3 thin films on Si (1 0 0) by DC magnetron sputtering technique using nanosized powder compacted target

La_0.67Ca_0.33MnO₃ (LCMO) thin films were successfully fabricated by a DC magnetron sputtering technique on Si (1 0 0) substrates from chemically synthesized compacted powders. Powders of proper stochiometry composites were synthesized by a novel chemical technique [D.R. Sahu, B.K. Roul, P. Pramanik, J.L. Huang, Physica B 369 (2005) 209] and were found to be nanosized (≈40-50 nm). The sinterability of the powders were improved significantly due to their large surface area with a reduction of sintering temperature (up to 500 °C) as compared to the powders prepared by other solid-state reaction route. Bulk LCMO targets were prepared and preliminary structural and magnetic properties of target were investigated for colossal magnetoresistance (CMR) properties. Films deposition parameters like DC power, gas flow rate, deposition time, etc., were critically optimized to achieve desired thickness of film using above LCMO target by DC magnetron sputtering. LCMO films fabricated on Si (1 0 0) substrates showed enhanced magnetoresistance (MR) at low temperature. Maximum MR of about 1000% was observed at 100 K. Paramagnetic to ferromagnetic transitions were observed in films below room temperature and were found at approximately 240 K. However, as compared to bulk target prepared by a chemical route, it was found that Curie temperature (T_c) and MR response of bulk target were higher than the thin films. Preliminary point chemical analysis revealed the deficiency of Ca²⁺ ions in CMR films.     

Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering

Epitaxial trilayer films of La_0.67Sr_0.33MnO₃ (LSMO)/La_0.75MnO₃ (L0.75MO)/La_0.67Sr_0.33MnO₃ (LSMO) have been prepared on (0 0 1) oriented LaAlO₃ substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R₀) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.     

Structural characterization and novel optical properties of defect chalcopyrite ZnGa2Te4 thin films

Stoichiometric thin film samples of the ternary ZnGa₂Te₄ defect chalcopyrite compound were prepared and characterized by X-ray diffraction technique. The elemental chemical composition of the prepared bulk material as well as of the as-deposited film was determined by energy-dispersive X-ray spectrometry. ZnGa₂Te₄ thin films were deposited, by conventional thermal evaporation technique onto highly cleaned glass substrates. The X-ray and electron diffraction studies revealed that the as-deposited and the annealed ZnGa₂Te₄ films at annealing temperature t_a ≤ 548 K are amorphous, while those annealed at t_a ≥ 573 K (for 1 h), are polycrystalline. The optical properties of the as-deposited films have been investigated for the first time at normal incidence in the spectral range from 500 to 2500 nm. The refractive index dispersion in the transmission and low absorption region is adequately described by the Wemple–DiDomenico single oscillator model, whereby, the values of the oscillator parameters have been calculated. The analysis of the optical absorption coefficient revealed an in-direct optical transition with energy of 1.33 eV for the as-deposited sample. This work suggested that ZnGa₂Te₄ is a good candidate in solar cell devices as an absorbing layer.     

Resistive hysteresis in BiFeO3 thin films

Capacitor-like Au/BiFeO₃/SrRuO₃ thin film with (1 1 1) orientation was grown on the SrTiO₃ (1 1 1) substrate by radio frequency magnetic sputtering. It shows a resistive switching behavior, where a stable hysteresis in current–voltage curve was well developed by applying an optimum voltage at room temperature, and it reached the saturation at a bias voltage of 8 V. The Child's law in V_max → 0 direction and the interface-limited Fowler–Nordheim tunneling in 0 → V_max direction, together with the polarization reversal in the BiFeO₃ barrier, are shown to involve in the observed resistive hysteresis.     

Thickness dependent transport and magnetotransport in CSD grown La0.7Pb0.3MnO3 manganite films

We report the effect of film thickness on transport and magnetotransport in La_0.7Pb_0.3MnO₃ (LPMO) manganite films grown on single crystalline LaAlO₃ substrate using chemical solution deposition (CSD) technique. AFM measurements show the island type grain growth responsible for the strain at the film-substrate interface, while structural studies using XRD shows the presence of thickness dependent compressive strain in the films which modifies the transport and magnetotransport in LPMO/LAO films. The observation of low temperature resistivity minima behavior in all the LPMO films has been explained in the context of electron-electron scattering mechanism. The ZFC-FC magnetization measurements show the glassy state behavior below T_min.     

Characterization of ZnO-In2O3 transparent conducting films by pulsed laser deposition

Transparent conducting oxide (TCO) films in the ZnO-In₂O₃ system were prepared by a pulsed laser deposition method. A target that consists of the mixture of ZnO and In₂O₃ powders was used. Influences of the target composition x (x = [Zn]/([Zn] + [In])) and heater temperature on structural, electrical and optical properties of the TCO films were examined. Introduction of oxygen gas into the chamber during the deposition was necessary for improvement in the transparency of the deposited films. The amorphous phase was observed for a wide range of x = 0.20-0.60 at 110 °C. Minimum resistivity was 2.65 × 10⁻⁴ Ω cm at x = 0.20. The films that showed the minimum resistivity had an amorphous structure and the composition shifted toward larger x, as the substrate temperature increased. The films were enriched in indium compared to the target composition and the cationic In/Zn ratio increased as the substrate temperature was increased.     

Preparation and electrochemical properties of Li-rich spinel-type lithium manganate coated LiMn2O4

Li-rich spinel-type lithium manganate (SC) coated LiMn₂O₄ composites were prepared and characterized by XRD, SEM, FT-IR, ICP, etc. Their charge/discharge behaviors were studied between 3.0 and 4.3 V at 40 mA g⁻¹ under room temperature, and the results showed that SC coated on surface of LiMn₂O₄ could improve cycling stability of composite electrodes. The composite (S1) containing 4.8 wt% of SC exhibited noticeably improved cycling stability, whereas the initial specific capacity was very close to that of LiMn₂O₄.     

Preparation and characterization of Ba1 − xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method

BST thin films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Stoichiometric (Ba_1 − xSr_x)TiO₃ (BST) thin films have been prepared on Pt/SiO₂/Si substrates using sol-gel method. The BST films were characterized by X-ray fluorescence (XRF) spectroscopy analysis, X-ray diffraction (XRD), scanning electron microscope (SEM) and electrical measurements. The relationships of processing parameters, microstructures, and dielectric properties are discussed. The results show that the films exhibit pure perovskite phase through rapid thermal anneal at 700 °C and their grain sizes are about 20-40 nm. The dielectric constants of BST5, BST10, BST15 and BST20 are 323, 355, 382 and 405, respectively, at 80 kHz.     

Preparation of Pb0.98La0.02(Zr0.65Ti0.35)O3 films and their fine patterning

The photosensitive lanthanum-doped lead zirconate titanate (PLZT) gel films were prepared by chemical modification with acetylacetone (AcAcH), and their fourier transform infrared (FT-IR) spectra and ultraviolet visible (UV-Vis) spectra were measured. The results show that the chelate rings of AcAcH with Ti or Zr are formed in the PLZT gel films. With irradiation of UV light, the chelate rings are photolyzed, and lead to a change of the solubility of the PLZT gel films in methanol. Transmission electron microscope (TEM) observations show that the perovskite phase is crystallized in PLZT thin film after heat treatment at 700 °C, whose grain sizes are less than or equal to 60 nm. The PLZT thin films exhibited hysteresis loops and good fatigue properties.     

Reversible transformations of silver oxide and metallic silver nanoparticles inside SiO2 films

Reversible transformation of silver oxide and metallic nanoparticles inside a relatively porous silica film has been established. Annealing of Ag-doped films in oxidizing (air) atmosphere at 450 °C yielded colorless films containing AgO_x. These films were turned yellow when heated in H₂-N₂ (reducing atmosphere) due to the formation of Ag nanoparticles. This yellow coloration (due to nano Ag⁰) and bleaching (conversion of Ag⁰ → Ag⁺) are reversible. Optical and photoluminescence spectra are well consistent with this coloration and bleaching. The soaking test of the air-annealed film in Na₂S₂O₃ solution supports the presence of Ag⁺. Grazing incidence X-ray diffraction and transmission electron microscopy studies reveal the formation of Ag-oxides and Ag nanoparticles in the oxidized and reduced films, respectively.     

Preparation and characterization of CeO2 highly dispersed on activated carbon

A new material constituted by cerium dioxide highly dispersed on activated carbon (CeO₂/AC) was prepared by an impregnation method using cerium(III) nitrate as CeO₂ precursor. In order to evaluate the degree of ceria dispersion on the carbon support, CeO₂/AC was characterized by a number of techniques: thermogravimetry coupled with a mass spectrometer (TG-MS), N₂ adsorption at 77 K, temperature-programmed desorption (TPD), temperature-programmed reduction (TPR) and transmission electron microscopy (TEM). The analysis of the decomposition process under inert atmosphere indicated that cerium nitrate decomposes at 440-460 K, with the evolution of NO. Furthermore, this process produces an additional oxidation of the carbon surface (with evolution of N₂O) and the subsequent onset of new oxygen surface groups, detected by means of temperature-programmed desorption. The ceria deposition process takes place with a decrease in the N₂ adsorption capacity of the starting carbon support, and the analysis of the pore size distribution showed that the majority of ceria particles are situated at the most internal part of the carbon porosity. The temperature-programmed reduction profile of CeO₂/AC was very different to that shown by unsupported CeO₂, with only one continuous reduction process at low temperatures (800-900 K). Finally, TEM pictures gave direct evidence that ceria is highly dispersed on the carbon surface, with a narrow CeO₂ particle distribution centred around 3 nm.     

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

The Pb(Zr_0.80Ti_0.20)O₃ (PZT) thin films with and without a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by radio frequency (rf) magnetron sputtering method. The PbO buffer layer improves the microstructure and electrical properties of the PZT thin films. High phase purity and good microstructure of the PZT thin films with a PbO buffer layer were obtained. The effect of the PbO buffer layer on the ferroelectric properties of the PZT thin films was also investigated. The PZT thin films with a PbO buffer layer possess better ferroelectric properties with higher remnant polarization (P_r = 25.6 μC/cm²), and lower coercive field (E_c = 60.5 kV/cm) than that of the films without a PbO buffer layer (P_r = 9.4 μC/cm², E_c = 101.3 kV/cm). Enhanced ferroelectric properties of the PZT thin films with a PbO buffer layer is attributed to high phase purity and good microstructure.     

The demonstration of epitaxial and electronic-magnetic properties for La0.67Sr0.33MnO3−δ films with (1 1 1) orientation

La_0.67Sr_0.33MnO_3−δ films, fabricated on (1 1 1) LaAlO₃ single-crystal substrates using a direct current magnetron sputtering technique, are demonstrated by X-ray diffraction patterns and pole figures to be high quality epitaxial films and there is a perfect matching relationship between the films and the substrates. We observed an obvious difference of the electronic-magnetic transportation properties among films sputtered on (1 1 1), (1 0 0) and (1 1 0) LaAlO₃ substrates, respectively. A mechanism for the difference is discussed briefly.     

Pretreatment and sintering of Si3N4 powder synthesized by the high-temperature self-propagation method

Self-propagation high-temperature synthesis (SHS) was applied for the synthesis of low-cost Si₃N₄ powder. The powder was purified and ground until its particle size reached submicron levels and its purity reached 98%. Using this pretreated powder, with α/β = 60/40 content, fully dense Si₃N₄ ceramics, having improved mechanical properties, were obtained by liquid-phase sintering in the presence of (Y, La)₂O₃-AlN. The mechanical properties achieved finally were as follows: strength, 784 MPa; hardness, 15.1 GPa; and fracture toughness, 5.2 MPa m^0.5. The behaviors of the SHS-Si₃N₄ powders before and after the pretreatment were compared. The relation between microstructure and mechanical properties of the sintered specimens and the effect of different β content in the powder on the sintering process of Si₃N₄ were also studied.     

Synthesis and upconversion luminescence properties of Yb/Er codoped BaGd2(MoO4)4 powder

Synthesis and upconversion luminescence properties of the new BaGd₂(MoO₄)₄:Yb³⁺,Er³⁺ phosphor were reported in this paper. The phosphor powder was obtained by the traditional high temperature solid-state method, and its phase structure was characterized by the XRD pattern. Based on the upconversion luminescence properties studies, it is found that, under 980 nm semiconductor laser excitation, BaGd₂(MoO₄)₄:Yb³⁺,Er³⁺ phosphor exhibits intense green upconversion luminescence, which is ascribed to ²H_11/2 → ⁴I_15/2 and ⁴S_3/2 → ⁴I_15/2 transition of Er³⁺. While the observed much weaker red emission is due to the non-radiative relaxation process of ⁴S_3/2 → ⁴F_9/2 and ⁴F_9/2 → ⁴I_15/2 transition originating from the same Er³⁺. The concentration quenching effects for both Yb³⁺ and Er³⁺ were found, and the optimum doping concentrations of 0.5 mol% Yb³⁺ and 0.08 mol% Er³⁺ in the new BaGd₂(MoO₄)₄ Gd³⁺ host were established.     

Preparation and super-hydrophilic properties of TiO2/SnO2 composite thin films

SnO₂-TiO₂ composite thin films were fabricated on soda-lime glass with sol-gel technology. By measuring the contact angle of the film surface and the degradation of methyl orange, we studied the influence of SnO₂ doping concentration, heat-treatment temperature and film thickness on the super-hydrophilicity and photocatalytic activity of the composite films. The results indicate that the doping of SnO₂ into TiO₂ can improve their hydrophilicity and photocatalytic activity, and the composite film with 1-5 mol% SnO₂ and heat-treated at 450°C is of super-hydrophilicity. The optimal SnO₂ concentration for the photocatalytic activity is 10 mol% and larger film thickness is helpful to reduce the contact angle of the composite films.     

High dielectric tunability of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency magnetron sputtering

In microwave tunable devices, one of the major challenges encountered is the simultaneous minimization of the material's dielectric loss and maximization of dielectric tunability. In this work, Ba_0.6Sr_0.4TiO₃ thin film with the thickness of 300 nm was deposited on Pt/SiO₂/Si substrates using radio-frequency magnetron sputtering technique, and its dielectric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well-crystallized Ba_0.6Sr_0.4TiO₃ film was deposited. The dielectric constant and dielectric loss of the film at 100 kHz are 300 and 0.033, respectively. Due to the good crystallinity of the Ba_0.6Sr_0.4TiO₃ films deposited by radio-frequency magnetron sputtering, high dielectric tunability up to 38.3% is achieved at a low voltage of 4.5 V.     

Synthesis and characterization of FeVO4 nanoparticles

Iron vanadate (FeVO₄) nanoparticles were synthesized by simple co-precipitation method using various surfactants such as ethylene glycol, polyethylene glycol 200 and polyethylene glycol 400 as the structure directing agents. Systematic investigations on the structural, morphological and magnetic properties of the materials have been studied. The lattice constants of the triclinic structure of FeVO₄ were calculated from the X-ray diffraction (XRD) analyses. The average grain size was estimated to be around 35 nm, which increased with increasing the calcination temperature. The stretching and bending vibrations of Fe-O were evaluated from the FT-IR spectra. Using VSM magnetometer, magnetic property was investigated through magnetic susceptibility and magnetization measurements. FeVO₄ exhibits two magnetic ordering temperatures at T ≈ 20 K and 14 K, which is due to two different chemical environments of Fe ligands such as octahedral FeO₆ and trigonal bipyramidal FeO₅ in a six-column doubly bent chain, respectively.