一种基于重频恒定脉冲分选的反侦察技术

传统脉冲雷达为了提高改善因子,一般要求重频固定,即使是重频参差雷达也是在若干固定参数中变化,易于被侦察接收机识别出来,文中提出一种包含有用信号与扰乱信号的复杂脉冲串反侦察技术,脉间重复周期在一定范围内随机变化,使得侦察机几乎不能通过重频来正确分选。为了消除扰乱信号对自身有用信号处理的影响,二者之间采用正交波形,在此基础上,只需进行传统的雷达信号产生与处理即可。文中基于直方图进行了理论分析,并由此给出了简单可行的扰乱脉冲实现方法,通过仿真表明,具有良好的反侦察性能。     

基于连续采样法的模拟接收机参数测量

传统的模拟接收机在雷达脉冲前沿提取各参数,但对如射频掩护、线性调频及脉内频率捷变等新型调制脉冲,不能较好地测量信号.用连续采样法实现对模拟接收机参数的测量,在过数字门限后,连续地对接收机视频信号进行采样、运算,得到雷达参数,解决了基于前沿采样的参数测量方法只能测量脉冲起始参数的缺点,为电子侦察提供了更多有用的参数.     

基于FPGA的雷达脉冲信号分选预处理研究

对传统的两种雷达信号分选识别算法进行理论介绍,并提出了一种基于现场可编程门阵列的脉冲信号分选方法,通过对脉冲描述字中相邻脉宽的分析处理,实现对雷达信号的简单分选,能够有效缓解后端系统的压力,提高雷达侦察接收机系统的性能。     

宽带相控阵雷达信号的二分推理提取算法

宽带相控阵雷达是电子对抗侦察的重点关注对象,在接收机截获的交错脉冲数据中将这一类雷达信号优先提取出来具有重要军事价值。针对接收机截获的全脉冲数据,文中提出了一种宽带相控阵雷达信号优先提取方法。该方法利用宽带相控阵雷达采用电子扫描方式的特点,分析其在同一工作模式下脉冲幅度的不变特性,引入一种生物信息学中的二分推理算法,并结合宽带信号的脉宽特性。首先,对经过脉宽阈值过滤的全脉冲数据按照脉幅大小重新排序;然后,利用二分推理算法进行脉幅突变点检测,将脉冲序列分为若干个脉幅相同的片段;最后,对每一片段进行脉冲个数阈值过滤,实现对宽带相控阵雷达脉冲的提取。仿真实验验证了方法的有效性。     

辐射式仿真中脉冲雷达ISAR成像等效模拟方法

脉冲雷达信号广泛用于逆合成孔径雷达(ISAR)成像。在辐射式仿真中采用脉冲雷达信号进行ISAR成像时,由于脉宽对应的传播距离远大于微波暗室的空间长度,脉冲回波会在发射信号未被完全辐射之前返回接收机,使得收发信号相互耦合,难以得到ISAR图像。该文提出基于间歇收发的脉冲雷达ISAR成像等效模拟方法,通过将脉冲信号分段发射、分段接收,得到分段稀疏的目标回波。然后,结合压缩感知与间歇收发回波,重构得到ISAR图像。根据等效模拟的实现流程,对仿真与实测数据进行分析,结果表明,该等效模拟方法所得ISAR图像与完整脉冲回波所得图像基本一致,从而验证了等效模拟方法的有效性。     

基于空时编码的雷达脉冲辐射源识别算法

随着宽带电子侦察接收机的广泛使用,同时进入接收机的信号越来越多,输出的数据量越来越大,传统的雷达辐射源识别方法很难适应分析处理的实时性和准确性要求.为解决这一问题,提出基于空时编码的雷达脉冲辐射源识别算法.通过设计一种空时编码算法来对雷达辐射源全脉冲数据中的载频、脉宽及重频等参数进行编码和特征提取,形成包含全脉冲数据时...     

数字侦察接收机中的瞬时频率测量技术

介绍了侦察接收机中基于瞬时自相关的瞬时频率测量方法,并在DSP上实现了这一方法。仿真实验证明,该方法能够实时测量雷达脉冲信号的瞬时频率,在一定信噪比条件下有较高的测频精度,测量出的瞬时频率包含了脉冲信号的脉内细微特征,可以作为识别脉冲信号的依据。     

数字侦察接收机中的瞬时频率测量技术

介绍了侦察接收机中基于瞬时自相关的瞬时频率测量方法，并在DSP上实现了这一方法。仿真实验证明，该方法能够实时测量雷达脉；中信号的瞬时频率，在一定信噪比条件下有较高的测频精度，测量出的瞬时频率包含了脉冲信号的脉内细微特征，可以作为识别脉冲信号的依据。     

基于模糊函数的脉冲信号检测技术

在现代战场上,电子设备体制及工作模式日益复杂、多变,新体制脉冲信号的大量使用,使得现代电磁信号侦察接收机面临的电磁环境日益密集、复杂。因此,复杂信号条件下脉冲信号检测识别技术成为现代侦察接收机中一项亟待解决的关键技术。从电子侦察的视角,借助时频分析理论,提出基于脉冲信号的分量分离和各分量的模糊函数检测方法,以其本质性的特征对电磁信号侦察进行分析讨论,并进行了仿真评估,验证了该方法指标性能的先进性。     

电子战侦察系统中的信号侦收质量评估与优选

阐述了信号侦收质量评估与信号优选对电子战侦察系统信号处理的重要性.以电子战侦察接收机信号处理流程为例,从脉冲级评估与特征级评估两方面介绍了信号侦收质量评估方法,以及通过特征聚类实现脉冲信号优选的方法.实验结果表明,信号侦收质量评估与信号优选可有效抑制非理想信号的不良影响,提高系统信号处理质量与环境适应性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.