喷雾热分解法制备MgO薄膜的研究

用简单的压缩空报喷雾热分法以醋酸镁为原料在Ｓｉ（１００）衬底上成功地制备了（１００）取向的ＭｇＯ薄膜。结果表明,为获得（１００）取向的ＭｇＯ薄膜,衬底温度和喷雾速率是关键因素。控制实验条件,在６００℃得到了（１００）取向的ＭｇＯ薄膜。同时,用Ｘ射线衍射（ＸＲＤ）、原子力显微镜（ＡＦＭ）和透射电镜（ＴＥＭ）对薄膜的微观结构进行了分析。     

二元不互溶Cu-Ta体系非晶相的形成

利用X射线衍射(XRD)、高分辨透射电子显微术(HRTEM)和X射线能谱(EDS)研究了共溅射Cu-Ta薄膜中非晶相的形成.结果表明,共溅射Cu-Ta薄膜为非晶相,但是其中存在着纳米尺度的Cu晶粒和富Cu的非晶纳米颗粒,即存在纳米尺度的相分离.正的混合热是导致Cu-Ta二元不互溶体系非晶态薄膜相分离的本质原因.     

蒸发诱导自组装仿生合成高有序度三维六方介孔氧化硅薄膜

借鉴自然界生物矿化的形成机理,利用蒸发诱导自组装(EISA)的方法,以十六烷基三甲基溴化铵(CTAB)为结构导向剂,正硅酸乙酯(TEOS)为硅源,通过浸渍提拉在普通玻璃片上制备出高有序度、三维六方结构的介孔氧化硅薄膜,通过XRD、TEM、低温N2吸附/脱附等方法对薄膜进行了表征,并初步讨论了形成三维六方结构的机理.     

SAW器件用金刚石基c轴取向LiNbO3压电薄膜的制备

采用脉冲激光沉积技术,在以c轴取向ZnO作为缓冲层的金刚石/硅基底上制备出了结晶良好的高c轴取向LiNbO3薄膜。利用X射线衍射对薄膜的结晶质量和c轴取向性进行了研究,结果表明制得的LiNbO3薄膜具有高度c轴取向且结晶质量良好。采用扫描电子显微镜和原子力显微镜对薄膜的表面形貌进行了分析,发现薄膜表面光滑,晶粒尺寸均匀,薄膜表面粗糙度约为20nm。     

化学气相沉积制备纳米结构碳化钨薄膜

采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米结构的碳化钨薄膜。采用SEM、XRD、EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成。通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20、基底温度为800℃的条件下得到的碳化钨薄膜是由直径为20～35nm的圆球状纳米晶构成。通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度。     

A Comparative Investigation of Optical and Structural Properties of Cu-Doped CdO-Derived Nanostructures

In this report, we studied various structural and optical properties of pure and copper-doped cadmium oxide (CdO) thin films. Nanostructured Cu-doped CdO films were deposited using sol–gel spin-coating technique. The structural and morphological changes have been observed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM) studies. The optical and electrical properties of the pure and Cu-doped CdO thin films were studied by UV–vis spectroscopy and four-point probe method, respectively. The XRD peaks show the formation of nanocrystalline CdO with cubic face-centered crystal structure. The band gaps of the as deposited films were found in the range of 2.32–2.73 eV, while after doping, it decreases due to structural deformation. The electrical resitivity was found to decrease approximately ～10 in Cu-doped CdO thin films.     

Microstructure of nanocrystalline CdS powders and thin films by Electrostatic Assisted Aerosol Jet Decomposition/Deposition method

Nanocrystalline CdS powders and thin films have been prepared by an Electrostatic Assisted Aerosol Jet Decomposition/Deposition (EAAJD) method from an aqueous solution of cadmium chloride and thiourea. The microstructure of the powders and films was characterised by a combination of transmission electron microscopy (TEM), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. The results showed that nanocrystalline powders and films were produced with a crystallite size less than 35 nm. A predominant hexagonal structure with a strong preferred orientation was formed in the films.     

Structural and photoluminescence investigation of ZnSe nanocrystals dispersed in organic and inorganic matrices

In this work, we report on the investigation of the effect of dispersion of zinc selenide (ZnSe) nanocrystallites into polystyrene (PS) and silica (SiO₂) thin films on their structural, morphological and photoluminescence properties. The ZnSe/PS nanocomposites thin films were synthesized by a direct dispersion of ZnSe crystallites into polymers solution, whereas the ZnSe–SiO₂ films were prepared on glass substrates by the sol–gel dip-coating technique. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-rays (EDX), UV–visible spectrophotometry and photoluminescence spectroscopy (PL) techniques have been used to study the structural, morphological and optical properties of the prepared nanocomposite thin films. XRD patterns have demonstrated the incorporation of cubic ZnSe in both organic and inorganic matrices. SEM micrographs have indicated that ZnSe dispersion in the films is homogeneous. UV–visible absorption spectra of the nanocomposite thin films have put into evidence that the dispersion of ZnSe nanocrystals in the thin film matrices improved their optical absorption. Room temperature PL spectra have shown that the addition of ZnSe enhanced the UV emission of PS and all the emission of SiO₂ thin films.     

Preparation and characterization of TiO2 thin films by the sol-gel process

Titanium dioxide (TiO₂) thin films have been prepared on microscope slide by the sol-gel process. The preparation of covering solution is investigated with the method of orthogonal experimental design, and the heat treatment temperature and time, which influenced on the films properties are discussed. And the TiO₂ thin films had been studied by the means of differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 °C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable α to β-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 °C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful “honey-comb” like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated.     

沉积气压对电弧离子镀制备MgO薄膜的结构及性能的影响

采用阴极真空电弧离子沉积技术在玻璃及Si衬底上成功地制备了具有择优结晶取向的透明MgO薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）及紫外-可见吸收光谱仪分别对MgO薄膜微观结构、表面形貌及可见光透过率进行了测试与分析。XRD结果表明,所制备的MgO薄膜具有NaCl型立方结构的（100）、（110）和（111）3种结晶取向,在沉积气压为0.7～3.0Pa的范围内,薄膜的择优结晶取向随沉积气压的升高先由（100）转变为（110）,最后变为（111）。SEM图表明随着沉积气压的升高,MgO薄膜的晶粒逐渐变小,薄膜结晶质量变差。在380～900nm范围内,沉积气压为0.7Pa下制备的MgO薄膜其可见光透过率高于90%,随着沉积气压的升高,薄膜的可见光透过率有所下降。     

中频孪生靶非平衡磁控溅射制备氮化硅薄膜及其性能(英文)

本文采用中频孪生靶非平衡磁控溅射技术在不同氮气流量比例的条件下制备出氮化硅薄膜。利用傅里叶变换红外光谱仪(FTIR)、X射线衍射仪(XRD)、原子力显微镜(AFM)、椭偏仪等研究了氮气流量比率对氮化硅薄膜的微观结构、表面形貌、沉积速率、折射率的影响。结果表明:中频孪生非平衡磁控溅射技术制备的薄膜为非晶态氮化硅。随着氮气流量比率的增加,Si-N键红外光谱吸收带向低波数漂移,薄膜的沉积速率降低,表面结构更为光滑致密,氮化硅薄膜的折射率降低。薄膜的硬度和杨氏模量分别达到22和220GPa左右。     

Microstructural and transport properties of LaNiO3−δ films grown on Si (111) by chemical solution deposition

Electrically conductive LaNiO_3−δ (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 °C. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity ρ(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The ρ(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices.     

Morphology, structural and optical characterization of electron beam evaporated bromoaluminium phthalocyanine (BrAlPc) thin films

Bromoaluminium phthalocyanine (BrAlPc) thin films have been deposited onto pre-cleaned glass substrates by electron beam evaporation technique. Thin films have been characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and optical absorption (UV–Vis) spectra. XRD studies of BrAlPc thin film deposited at room temperature shows the indication of the α-phase. FESEM images have shown that the most of particles are spherical in shape with an average size about 26–34 nm. Using UV–Visible spectra over the wavelength range 300–800 nm, the optical band gap, absorption coefficient and extinction coefficient of BrAlPc thin films are evaluated. The optical absorption measurements of thin films show that the absorption mechanism is due to direct transition.     

Surface morphological, structural, electrical and optical properties of annealed vanadyl tetra tert-butyl 2, 3 naphthalocyanine thin films

Vanadyl Tetra Tert-Butyl 2, 3 Naphthalocyanine (VTTBNc) thin films have been grown at room temperature by physical vapor deposition technique. The article describes the role of air and vacuum annealing on VTTBNc thin film surface morphology, structure, electrical conductivity and optical absorbance on the basis of respective measurements like atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray Diffractogram (XRD), DC electrical conductivity with integrated electrodes and UV-visible absorption spectra.     

Effect of sputtering power on microstructure of dielectric ceramic thin films by RF magnetron sputtering method using (Ba<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> as target

Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO₂ (110) substrates using (Ba_0.3Sr_0.7)(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular, the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity improves and the grain size and roughness of the thin films reach maximum values at 200 W.     

Preparation and characterization of LiNiVO4 powder and non-stoichiometric LiNixVyOz films

Inverse spinel type structured oxide, LiNiVO₄, was synthesized by using solid-state method and the crystalline powder was characterized by Rietveld refinement and X-ray photoelectron spectroscopy. Non-stoichiometric lithium nickel vanadate thin films were prepared by physical vapour deposition technique. The amorphous films were characterized by Rutherford back-scattering spectroscopy (RBS), nuclear reaction analysis (NRA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) analytical methods. Films crystal growth at various temperatures was also studied by XRD and SEM. The HRTEM analysis of sputtered film shows nanocrystalline domains of NiO and LiNiVO₄ phases with characteristic lattice parameters of the host compound and the results correlate well with the XRD data. Electrochemical properties of the films were discussed.     

Effects of sapphire substrates surface treatment on epitaxial ZnO thin films grown by MOCVD

The surface treatment effects of sapphire substrate on the quality of epitaxial ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) were studied. The sapphire substrates have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best-quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. Results show that the intensity of (002) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching is strongest. FWHM of (002) diffraction peak is narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.     

Characterization of size-quantized PbTe thin films synthesized by an electrochemical co-deposition method

Size-quantized thin films of PbTe were electrodeposited on Au (1 1 1) substrates using a practical electrochemical method, based on the simultaneous underpotential deposition of Pb and Te from the same solution containing ethylenediamine tetraacetic acid, Pb²⁺, and TeO₃²⁻ at a constant potential. These thin films were characterized by X-ray diffraction (XRD), scanning tunneling microscopy (STM), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS), and reflection absorption-FTIR (RA-FTIR). AFM, STM, and XRD results indicate that the growth of PbTe thin films follows the nucleation and two dimensional growth mechanism, resulting in high crystalline films of PbTe (2 0 0) in cubic structure, which was grown at a kinetically preferred orientation on Au (1 1 1). The EDS analyses of the films reveal that Pb and Te are present in an atomic ratio of approximately 1:1. The quantum-confined effect of the PbTe thin films are confirmed by the RA-FTIR measurements.     

Structural,morphological, optical and electrical properties of spray deposited zinc doped copper oxide thin films

Nanostructured spray deposited zinc (Zn) doped copper oxide (CuO) thin films were characterized by employing X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX), atomic force microscopy (AFM) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectroscopy. XRD patterns of CuO and Zn doped CuO thin films indicated monoclinic structure with the preferred orientation along \(\left( {\bar 111} \right)\) plane. Maximum value of crystallite size is found about 28.24 nm for 5 at% Zn doped CuO thin film. In FESEM images, nanoparticles were observed around the nucleation center. EDX analysis confirms the presence of all component elements in CuO and Zn doped CuO thin films. Analysis by AFM of CuO and Zn doped CuO thin films figured out decrease of surface roughness due to Zn doping. UV–Vis–NIR spectroscopy showed that CuO and Zn doped CuO thin films are highly transparent in the NIR region. Optical band gap of CuO thin films decreased with substrate temperature and that of Zn doped CuO thin films increased with Zn concentration. Refractive index of CuO and Zn doped CuO thin films raised with photon wavelength and became constant in the NIR region. 5 at% Zn doped CuO thin film showed the highest optical conductivity and the lowest electrical resistivity at room temperature.