Dielectric studies of Ca x Sr1−x F2 mixed crystals

The dielectric constant (K) and loss (K) of CaF₂, SrF₂ and their mixed crystals as a function of frequency in the range 10² to 10⁵ Hz at room temperature were measured. Except at 10² Hz, the value of the dielectric constant was found to be independent of frequency. At any frequency the value ofK for mixed crystals was found to vary non-linearly as a function of composition, showing a maximum at about equimolar composition. The value ofK was less in mixed crystals compared to the end members. An attempt is made to explain the results.     

Thermal properties and devitrification behaviour of (1+x)CaO·(1−x)MgO·2SiO2 glasses

The thermal properties (glass transformation, T _g, and softening, T _s, temperatures), the crystalline phases formed during heating in a differential thermal analysis (DTA) apparatus, the kinetic parameters and the mechanism of the devitrification process, of glasses of the system diopside-wollastonite were investigated. The substitution of CaO by MgO induces an increase in T _g and the crystal growth activation energy, E _c; this is probably linked to the greater coordination number of Ca^z+ ions with respect to the Mg²⁺ ions. The substitution of CaO by MgO lowers the nucleation rates of the diopside phase; wollastonite solid solution nuclei form whose growth appears to leave a glassy matrix in which diopside formation is inhibited. Only surface nucleation was observed, but, in finely powdered samples, which soften and efficiently sinter before devitrifying, surface nuclei behave as bulk nuclei. When bulk crystallization occurs, the Avrami parameter m was found to be 2 for all glasses, except the diopside one, for which m=3.     

Laser deposition and study of CuInS2x Se2(1−x) crystals and films

Single-phase films of CuInS_2x Se_2(1−x) solid solutions with a chalcopyrite structure were deposited by laser evaporation of CuInS_2x Se_2(1−x) crystal targets (0≤x≤1). The structural and optical characteristics of the films depend on the chalcogen concentrations.     

Physical and electrical properties of MnO2-doped Pb(Zr x Ti1−x )O3 ceramics

The effects of composition on the physical property change in the phase coexistence region between the tetragonal and rhombohedral phases have been investigated as a function of zirconium concentration, x, for the MnO₂-doped Pb(Zr _x Ti_1–x )O₃ (0.40x0.60) ceramics. The relative amount of phase coexisting between the tetragonal and rhombohedral phases affects greatly both dielectric and piezoelectric properties as a function of zirconium concentration. However, there are no detectable changes between the apparent density and microstructure. Also, in the coexistence region, the relative amount of coexistence of the rhombohedral phase increases with MnO₂ addition. The inflection points of the dielectric constant shift to lower zirconium concentration in proportion to the MnO₂ addition, owing to the substitution effect on the PZT lattice site.     

Thermal conductivity of tellurium-enriched Pb1 − x Mn x Te single crystals

We have studied the effect of excess tellurium atoms (up to 0.5 at %) on the thermal conductivity of single-crystal Pb_{1 ? x} Mn _x Te (x = 0.04) samples annealed at 570K for 120 h. We have evaluated the lattice and electron thermal conductivities of the samples, their additional thermal resistance due to structural defects, and the coefficient in the expression for the effective phonon scattering cross section. We assume that some of the excess Te atoms fill lead vacancies, thereby reducing the effective phonon scattering cross section.     

Preparation and electrical properties of (1 − x)BiScO3 · xPbTiO3 ceramics with MnO2 and Ni2O3 additions

We report the preparation of ceramic samples of (1 ? x)BiScO₃ · xPbTiO₃ · yMO _z (M = Mn, Ni; 0.63 ≤ x ≤ 0.65; 0 ≤ y < 0.02) solid solutions with a tetragonally distorted perovskite structure, X-ray diffraction characterization of the solid solutions, and their dielectric, piezoelectric, and pyroelectric properties. We present data on the symmetry and unit-cell parameters of the solid solutions, characteristics of their dielectric hysteresis loops, and the temperature dependences of their relative dielectric permittivity ?, dielectric loss tangent tan δ, piezoelectric charge coefficient d ₃₃, and pyroelectric coefficient p ^σ in the range 290–800 K. After poling, the ceramics possessed well-defined piezo- and pyroelectric properties, with characteristic 290-K d ₃₃ and p ^σ values of 300 pC/N and 15 nC/(cm² K), respectively.     

Structural characterization and complex impedance studies on fast ion conducting mixed system (SbI3) x –(Ag2CrO4)1−x

This paper deals with preparation and physico-chemical characterization of a new mixed system, (SbI₃) _x –(Ag₂CrO₄)_1?x (0·1 ≤ x ≤ 0·9), undertaken with a view to evaluate silver ion transport properties and identify those fast ion conducting compositions. Polycrystalline samples of various compositions were synthesized by rapid melt-quenching method. Powder X-ray diffraction (XRD) analysis in conjunction with differential scanning calorimetry (DSC) and electrical transport evaluation involving silver ionic transport number and temperature-dependent electrical complex impedance measurements were carried out in order to identify the different phases responsible for the conduction mechanism. Realization of a fast ionic conductivity value of 3·2 × 10^?2 S cm^?1 in the case of the composition, (SbI₃)_0·3–(Ag₂CrO₄)_0·7, at room temperature due to silver ion transport has been discussed in terms of observed structural and thermal characteristics. A detailed analysis of conductivity spectra pertaining to the best conducting system, (SbI₃)_0·3–(Ag₂CrO₄)_0·7, has also been presented.     

Synthesis and properties of dielectric (HfO2)1 − x (Sc2O3) x films

(HfO₂)_{1 ? x} (Sc₂O₃) _x films have been grown by chemical vapor deposition (CVD) using the volatile complexes hafnium 2,2,6,6-tetramethyl-3,5-heptanedionate (Hf(thd)₄) and scandium 2,2,6,6-tetramethyl-3,5-heptanedionate (Sc(thd)₃) as precursors. The composition and crystal structure of the films containing 1 to 36 at % Sc have been determined. The results demonstrate that, in the composition range 9 to 14 at % scandium, the films are nanocrystalline and consist of an orthorhombic three-component phase, which has not been reported previously. Using Al/(HfO₂)_{1 ? x} (Sc₂O₃) _x /Si test structures, we have determined the dielectric permittivity of the films and the leakage current through the insulator as functions of scandium concentration. The permittivity of the films with the orthorhombic structure reaches k = 42–44, with a leakage current density no higher than ～10^?8 A/cm².     

X-ray,electrical conductivity and infrared studies of the system Zn1−x CO x Mn1−x Fe x CrO4

The system Zn_1–x Co _x Mn_1–x Fe _x CrO₄ is tetragonal in the range 0.0x0.4 and cubic in the range 0.5x1. Electrical resistivity temperature behaviour obeys Wilson's law for all the compounds and thermoelectric coefficient values vary between 135 to 226V K^–1. All compounds exhibit P-type semiconductivity and possess low mobility values (10^–9 cm² V^–1 sec^–1). The infrared spectra show the presence of two strong absorption bands around 500 and 600 cm^–1. The probable ionic configuration for the system is suggested to be Zn _1–x ²⁺ Fe _x ^–y3+ -Co _x ²⁺ [Mn _1–x ³⁺ Fe _y ³⁺ CO _x ^–y2+ Cr³⁺]O₄.     

Photoconductivity in single crystals of (TlGaSe2)1−x(TlInS2)x alloys (0−0.45 ≤ x ≤0.55-1)

The spectral distribution of the photoconductivity in (TlGaSe₂)_1−x(TlInS₂)_x single crystals has been studied at 77 K and 300 K. At O ≤ x ≤ 4, Eg is observed to vary linearly with x. Eg(x) deviates from linearity at x = 0.6. This deviation is attributed to the effect of disorder in the composition. Over the range 0.6 to 2.2 eV pronounced impurity photoconductivity is detected at 77 K and 300 K. Deep impurity levels and their neighbourhood in this alloy are established to preserve their positions with the variation in the composition. The analysis of the obtained results indicates that the impurity centres are mainly connected with the cation neighbourhood.     

Dielectric and impedance spectroscopic studies of (Sr1−x Pb x )TiO2 glass ceramics with addition of Nb2O5

Glasses were made by melt-quench method in the system [(Sr_1?x Pb _x )O·TiO₂]-[2SiO₂·B₂O₃]-5[K₂O-BaO] (0·0 ≤ x ≤ 0·4) with addition of 1 mol% Nb₂O₅. Perovskite strontium lead titanate in solid solution phase has been crystallized in borosilicate glassy matrix with suitable choice of composition and heat treatment schedule. Addition of 1 mol% of Nb₂O₅ enhances the crystallization of lead strontium titanate phase in the glassy matrix. Scanning electron microscopy (SEM) is performed to study the surface morphology of the crystallites and crystalline interface to the glass. Dielectric properties of these glass ceramics were studied by measuring capacitance and dissipation factor as a function of temperature at a few selected frequencies. Nb₂O₅ doped strontium lead titanate glass ceramic shows a high value of dielectric constant. It is of the order of 10,000 while the dielectric constant of undoped glass ceramic sample is of the order of 500. Complex impedance and modulus spectroscopic techniques were used to find out the contributions of polarization of crystallites and glass crystal interfaces to the resulting dielectric behaviour.     

Sintering and properties of SrBi2(Ta1−x V x )2O9 ceramics

The effects of vanadium doping on the sintering, microstructure, dielectric properties, and ferroelectric properties of SrBi₂(Ta_1–x V _x )₂O₉ ceramics were investigated. The densification and grain-growth processes of the vanadium doped ceramics were shifted to a lower temperature range. For the ceramics with relative density 90%, the dielectric constant is 120–125 and 100–130 for the undoped and doped ceramics, respectively, and the dielectric loss tangent is below 1%. As compared with the undoped ceramics, the ferroelectric properties can be significantly improved by doping with an appropriate amount of vanadium and sintering at 1000°C. The variations of dielectric and ferroelectric properties are influenced by the incorporation of vanadium into crystal lattice and several microstructural factors.     

The effect of oxygen and lead doping on electrical and optical properties of highT c GdBa2(Cu1−x Pb x )3Oδ compound superconductors

A systematic study of the electrical and infrared properties of the high critical temperature,T _c , compound superconductor GdBa₂(Cu_1–xPb_x)₃O has been performed. Resistivity and a.c. susceptibility measurements show a significant drop inT _c when copper is replaced by lead in the range 0.005 x 0.025. Infrared measurements show that the conductivity of the compound increases with the increase in lead concentration. For undoped samples, all the Restrahlen vibrations, common to these materials, are present in the infrared reflectance spectra. As the concentration of lead is increased, a shift of the phonon modes, as well as broadening of the 150 cm^–1 phonon mode, is observed. Also the Restrahlen vibration around 410 cm^–1 present in the normal material starts to disappear. This 150 mode is attributed to a change in the oxygen concentration, and is shown to be correlated with the critical temperature.     

Mixtures of (N2)1−x : (O2) x at High Pressures and Low Temperatures

We performed Raman measurements at 18 K and pressures up to 25 GPa in order to construct a tentative phase diagram of the (N ₂)_1–x :(O ₂)_x –system at low temperatures. We varied the composition of the mixed system over the whole concentration range. Here we focused on the systems with high nitrogen concentration and pressures above 2 GPa. It is known that at room temperature oxygen is highly solvable in the –phase of N ₂. The experimental results show that oxygen suppresses the disorder–order transition –N ₂.     

Preparation, electrical conductivity, and magnetic susceptibility of (Ba1 − x Bi x )(Mn0.5 + x/2Nb0.5 − x/2)O3

(Ba_{1 ? x} Bi _x )(Mn_{0.5 + x/2}Nb_{0.5 ? x/2})O₃ perovskite solid solutions have been prepared by solid-state reactions and their physicochemical properties have been investigated. We have studied the influence of bismuth substitution for barium cations on the phase composition of the samples. Their magnetic susceptibility and electrical conductivity have been measured as functions of temperature. The composition dependence of the antiferromagnetic ordering temperature is presented.     

Magnetization curves of (La1−x Sr x )2CuO4−δ single crystals as functions ofx and δ

The second peak effect in magnetization curves for overdoped (La_1–xSr_x)CuO_4– single crystals was examined by means of systematic variations of Sr content x and oxygen deficiency . Oxygen defect concentration was found to sensitively affect the critical temperature T_c and the macroscopic pinning force F_p, resulting in significant changes in magnetization hysteresis loops. Observations of dependence of M and F_p at the same reduced temperature T/T_c yielded an insight into the role of oxygen defects: increasing results in increasing the pinning center density N. The second peak field B_2pk seemed to be determined by the development of a percolating network of magnetically reversible regions from the observation that the temperature dependence of B_2pk showed similar behavior to the irreversibility field B_irr.