Peripheral-coupled-waveguide MQW electroabsorption modulator for near transparency and high spurious free dynamic range RF fiber-optic link

Peripheral coupled waveguide (PCW) design has been deployed in InGaAsP multiple quantum-well (MQW) electroabsorption modulator (EAM) at 1.55-/spl mu/m wavelength. PCW enhances the optical saturation power and reduces the optical insertion loss and the equivalent V/sub /spl pi// simultaneously. A radio-frequency link using a 1.3-mm-long lumped-element PCW EAM has achieved experimentally a link gain of -3 dB, at 500 MHz and at input optical power of 80 mW. The corresponding two-tone multioctave spurious-free dynamic range (SFDR) at the same bias is measured at 118 dB/spl middot/Hz/sup 2/3/. The single-octave SFDR at the third-order null bias is 132 dB/spl middot/Hz/sup 4/5/.     

Analog performance of an ultrafast sampled-time all-optical fiber XPM wavelength converter

Analog performance of an all-optical ultrafast wavelength converter is measured and reported for the first time. The wavelength-conversion process is based on nonlinear cross-phase modulation in an optical fiber combined with an optical filter to convert phase modulation to amplitude modulation. The spurious-free dynamic range (SFDR) of the converter is measured to be 82 dB/spl middot/Hz/sup 2/3/. We define a new metric called the SFDR power penalty, which measures the degradation in SFDR relative to baseline the back-to-back analog optical link. The SFDR power penalty was measured to be 5 dB/spl middot/Hz/sup 2/3/ and is shown to be a function of the input optical power. This metric is used to characterize the linear region of the optical wavelength converter.     

Bismuth oxide nonlinear fibre-based 80 Gbit/s wavelength conversion and demultiplexing using cross-phase modulation and filtering scheme

Reported is the experimental demonstration of wavelength conversion and subsequent demultiplexing of an 80 Gbit/s OTDM signal using the cross-phase modulation and spectral filtering technique in short lengths of bismuth oxide-based nonlinear fibre with a nonlinearity of /spl gamma/=/spl sim/1100 W/sup -1/ /spl middot/ km/sup -1/. Error-free, overall operation is readily achieved over a wavelength tuning range of /spl sim/10 nm.     

RF transmission over multimode fibers using VCSELs-comparing standard and high-bandwidth multimode fibers

Fiber-optic radio-frequency links have been assembled using oxide-confined vertical-cavity surface-emitting lasers (VCSELs) and multimode fibers. Links with single and multimode VCSELs and with standard and high-bandwidth fibers have been evaluated and compared in the frequency range of 0.1-10 GHz. The best results were obtained for links with a multimode VCSEL and a high-bandwidth fiber. For a 500-m-long link, a spurious free dynamic range of 104 dB/spl middot/Hz/sup 2/3/ at 2 GHz and 100 dB/spl middot/Hz/sup 2/3/ at 5 GHz were obtained while allowing for a VCSEL-fiber misalignment of /spl plusmn/12 /spl mu/m. Corresponding numbers for the intrinsic link gain and noise figure are -29 and -33 dB, and 39 and 42 dB at 2 and 5 GHz, respectively. Inferior performance was observed for the standard fiber link due to a larger variation in modal group velocities. This paper also presents a detailed link analysis to identify performance limitations and to suggest modifications for improved performance.     

Sampled-grating DBR laser-based analog optical transmitters

Sampled-grating distributed Bragg grating (SGDBR) laser-based widely tunable optical transmitters are investigated for application in high-performance analog links. More than 45 nm tuning range, 40 dB sidemode suppression ratio, and peak relative intensity noise below -153 dB/Hz is measured. SGDBR lasers integrated with semiconductor optical amplifiers and electroabsorption modulators (EAMs) are characterized with spurious free dynamic range of 125-127 dB/spl middot/Hz/sup 4/5/ over the wavelength tuning range. It is also shown how the modulation response of the EAM is affected by the optical power to limit the performance of the analog transmitter.     

Enhanced linear dynamic range of asymmetric Fabry-Pe/spl acute/rot modulator/detector

An InGaAsP multiple-quantum-well asymmetric Fabry-Pe/spl acute/rot modulator/detector has been developed for radio-over-fiber systems. The measured bandwidth is more than 6 GHz and the total insertion loss is 7.1 dB. The property of nonlinearity and spurious-free dynamic range (SFDR) has been studied theoretically. By optimizing the operation optical wavelength and bias voltage based on the numerical simulation, fifth-order nonlinearity dominates the intermodulation distortion and an SFDR of 101 dB/spl middot/Hz/sup 4/5/ has been achieved experimentally.     

A resonant tunneling quantum-dot infrared photodetector

A novel device-resonant tunneling quantum-dot infrared photodetector-has been investigated theoretically and experimentally. In this device, the transport of dark current and photocurrent are separated by the incorporation of a double barrier resonant tunnel heterostructure with each quantum-dot layer of the device. The devices with In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dots are grown by molecular beam epitaxy. We have characterized devices designed for /spl sim/6 /spl mu/m response, and the devices also exhibit a strong photoresponse peak at /spl sim/17 /spl mu/m at 300 K due to transitions from the dot excited states. The dark currents in the tunnel devices are almost two orders of magnitude smaller than those in conventional devices. Measured values of J/sub dark/ are 1.6/spl times/10/sup -8/ A/cm/sup 2/ at 80 K and 1.55 A/cm/sup 2/ at 300 K for 1-V applied bias. Measured values of peak responsivity and specific detectivity D/sup */ are 0.063 A/W and 2.4/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W, respectively, under a bias of 2 V, at 80 K for the 6-/spl mu/m response. For the 17-/spl mu/m response, the measured values of peak responsivity and detectivity at 300 K are 0.032 A/W and 8.6/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W under 1 V bias.     

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

This letter reports AlGaN/GaN high-electron mobility transistors with capless activation annealing of implanted Si for nonalloyed ohmic contacts. Source and drain areas were implanted with an Si dose of 1/spl times/10/sup 16/ cm/sup -2/ and were activated at /spl sim/1260/spl deg/C in a metal-organic chemical vapor deposition system in ammonia and nitrogen at atmospheric pressure. Nonalloyed ohmic contacts to ion-implanted devices showed a contact resistance of 0.96 /spl Omega//spl middot/mm to the channel. An output power density of 5 W/mm was measured at 4 GHz, with 58% power-added efficiency and a gain of 11.7 dB at a drain bias of 30 V.     

Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m

We demonstrate broadband superluminescent diode at /spl sim/1.6-/spl mu/m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 /spl deg/C under 8 kA/cm/sup 2/.     

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2/spl times/10/sup -10/ A/cm/sup 2/ at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm/sup 2/, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9/spl times/10/sup 14/ cm/spl middot/Hz/sup 1/2/W/sup -1/ was estimated at 256 nm under zero bias.     

1.65 /spl mu/m-band optical amplification with Er/sup 3+/-doped fluorozirconate fibre using 0.8 /spl mu/m upconversion pumping

In order to expand the available bandwidth for wavelength division multiplexing transmission systems, a 1.65 /spl mu/m-band optical fibre amplifier with Er/sup 3+/-doped fluorozirconate fibre using 0.8 /spl mu/m upconversion pumping has been demonstrated. The positive gain, 3.8 dB, is the first ever achieved by means of (/sup 2/H/sub 11/2/, /sup 4/S/sub 3/2/) /spl rarr/ /sup 4/I/sub 9/2/ stimulated emission transition.     

Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In/sub 0.88/Al/sub 0.12/As/sub 0.80/Sb/sub 0.20/ nearly matches with InAs/sub 0.91/Sb/sub 0.09/, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 /spl mu/m and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D/sup */) of 2.6/spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W at 4.0 /spl mu/m, and 4.2/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W at 3.7 /spl mu/m are achieved at 300 K and 230 K, respectively.     

35-dB gain Tm-doped ZBLYAN fiber amplifier operating at 1.65 /spl mu/m

We demonstrate the first high gain rare-earth-doped fiber amplifier operating at 1.65 /spl mu/m. It consists of ZBLYAN fiber with a Tm/sup 3+/-doped core and Tb/sup 3+/-doped cladding, pumped by 1.22 /spl mu/m laser diodes. It is possible to achieve efficient amplification with Tm/sup 3+/ ions if their amplified spontaneous emission (ASE) in the 1.75 to 2.0 /spl mu/m wavelength region is suppressed by doping Tb/sup 3+/ ions in the cladding. A two-stage-type fiber amplifier is constructed and a signal gain of 35 dB is achieved for a pump power of 140 mW. A gain over 25 dB is realized in the 1.65 /spl mu/m to 1.67 /spl mu/m wavelength region.     

1.58-/spl mu/m broad-band erbium-doped tellurite fiber amplifier

This paper describes the development of a 1.58-/spl mu/m broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er/sup 3+4/ I/sub 13/2/ /sup 4/I/sub 15/2/ transition and the signal excited-state absorption (ESA) cross sections of the Er/sup 3+4/ I/sub 13/2/ - /sup 4/I/sub 9/2/ transition. We detail the amplification characteristics of a 1.58-/spl mu/m-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-/spl mu/m-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-/spl mu/m-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%.     

A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-/spl mu/m partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is -109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (/spl sim/300-/spl Omega//spl middot/cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 /spl Omega//spl middot/cm). The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m (excluding pads).     

A 310/spl deg//3.6-dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.     

Electron beam direct-write tunable polymeric waveguide grating filter

We report a tunable electron beam direct-write polymeric waveguide Bragg grating filter based on a negative tone epoxy, The waveguide filter, with a 5-mm-long first-order grating, exhibits a transmission peak of -27 dB and a 3-dB bandwidth of /spl sim/0.8 nm, and there is an excellent agreement between experimental data and simulation results. The temperature response of the filter is also characterized. The rate of change of refractive index dn/dT is /spl sim/ -1.8 /spl times/ 10/sup -4///spl deg/1C at 1550-nm wavelength for both transverse electric and transverse magnetic polarizations, and the rate of change of peak wavelength d/spl lambda//dT is /spl sim/ -0.14 nm//spl deg/C. The tuning performance is comparable to other grating devices fabricated using multiple processing steps.     

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of /spl sim/10/sup 5/ when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D/sup */ were found to be 6.34/spl times/10/sup -13/ W and 4.45/spl times/10/sup 11/ cm/spl middot/Hz/sup 0.5/ W/sup -1/, respectively.     

Arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size based on Si photonic wire waveguides

A miniature arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size consisting of Si photonic wire waveguides was designed using complete modelling in the finite-difference time-domain simulation. The device was fabricated onto a silicon-on-insulator substrate and evaluated in the wavelength range around 1.55 /spl mu/m. The clear demultiplexing characteristics were observed with a channel spacing of 11 nm and a loss of less than 1 dB.     

210 mW 2.84 /spl mu/m Ho/sup 3+/, Pr/sup 3+/-doped fluoride fibre laser

210 mW of unsaturated continuous-wave output from a Ho/sup 3+/, Pr/sup 3+/-doped fluoride fibre laser is demonstrated using the /spl sim/1100 nm output from a free-running diode-cladding-pumped Yb/sup 3+/-doped silica fibre laser as the pump source. A slope efficiency of 3.2% and an output wavelength of 2.84 /spl mu/m are obtained.