溶胶-凝胶法制备光学减反射膜的研究进展

减反射膜可以有效降低光在传播过程中的损耗,应用在太阳能电池中能有效提高能量利用效率。减反射膜是一层折射率介于空气和基板之间的光学薄膜,能减少或消除光学元件表面的反射光,从而增加透光量,因此在光学研究中占有重要地位。溶胶凝胶法是当前材料制备的重要手段之一,与其他方法相比具有产物均匀、反应温度低、可调控性强等显著优点,是制备减反射膜的理想方法。本文介绍了溶胶-凝胶法制备减反射膜的原理,综述了近年来溶胶-凝胶法制备减反射膜的研究进展,特别是对溶胶-凝胶法制备的三类典型减反射膜作了深入讨论,总结了各种不同结构的优缺点,展望了溶胶-凝胶制备减反射膜的前景和面临的挑战。     

溶胶-凝胶法制备ITO薄膜研究进展

概述了近年来国内外溶胶-凝胶法(Sol-Gel)制备ITO薄膜的研究状况,对Sol-Gel法制备ITO薄膜工艺做了简要介绍,重点讨论了Sol-Gel法制备ITO薄膜的溶胶体系,分析比较了有机醇盐、无机盐以及掺入ITO粉末方法体系的优缺点,最后讨论了甩膜法、提拉法及平铺法在Sol-Gel法制备ITO薄膜中镀膜的应用.指出Sol-Gel法是一种高效可行的制备ITO薄膜的方法,有着广阔的应用前景.     

溶胶-凝胶法制备SiO2薄膜的工艺研究

以正硅酸乙酯为前驱体、乙醇为溶剂,通过酸催化,采用溶胶-凝胶法制备SiO2薄膜,通过正交实验确定最佳工艺方案,并讨论影响SiO2薄膜结构和性质的主要因素,研究了最佳配方siO2薄膜的表面形貌、光学性能和力学性能等.结果表明,影响光学性能的主要因素是正硅酸乙酯和水;影响显微硬度的主要因素是乙醇;膜层结构为非晶态;薄膜具有增透效果并可提高试样的抗弯强度.     

溶胶-凝胶法制备MgxZn1-xO薄膜及性能研究

采用溶胶-凝胶法在石英玻璃片衬底上制备了Mg2+掺杂的ZnO(MgxZn1-xO)薄膜,研究了Mg2+掺杂对ZnO薄膜结构和紫外透过率的影响;在氧化物薄膜上真空蒸镀了Al叉指电极,制得紫外原型探测器件,测试了I-Ⅴ特性.结果表明,Mg2+掺杂后,MgxZn1-xO薄膜为纤锌矿结构,随着x值增加,晶格常数c逐渐减少,α逐渐增大,Mg2+掺杂抑制了(002)晶面的生长;紫外透过光谱表明,Mg2+掺杂后吸收边发生蓝移,可提高ZnO薄膜的禁带宽度;I-Ⅴ特性曲线表明,正向偏压下探测器的暗电流和光照电流随外加偏压呈线性增长,但光照电流与暗电流的差别较大.     

溶胶-凝胶法制备MgO薄膜的研究

本文采用非金属醇盐以醋酸镁为起始原料,胶棉液为添加剂,在Ｓｉ（１００） 衬底上成功地制备了ＭｇＯ 薄膜。结果表明,薄膜的晶体结构与胶棉液的含量及退火温度有关。同时,用Ｘ射线衍射（ ＸＲＤ） 、原子力显微电镜（ＡＦＭ） 和透射电镜（ ＴＥＭ） 对薄膜的微观结构进行了分析。这种制备ＭｇＯ 薄膜的新方法还未见有报道。     

溶胶-凝胶法制备太阳能薄膜的研究及展望

介绍了溶胶-凝胶法的反应机理、工艺过程,着重介绍了太阳能光电/光热转换的原理、薄膜的分类以及最新研究现状,指出采用溶胶-凝胶法可获得高效率太阳能薄膜,并展望了溶胶-凝胶法在太阳能薄膜制备方面的发展趋势及应用前景.     

ZAO薄膜的溶胶-凝胶法制备及性能研究

以普通玻璃载玻片为衬底,采用溶胶-凝胶工艺成功地制备出沿(002)晶面择优取向生长的ZAO薄膜.用XRD、SEM、紫外-可见光分光光度计和四探针电阻测试仪进行了结构和性能分析,研究了掺Al3+浓度、镀膜层数和退火温度对ZAO薄膜的晶体结构、形貌及光电性能的影响.当掺杂浓度为1%(原子分数)、镀膜层数为12层、在氩气气氛下经过600℃退火时,得到电阻率为1.37×10-2Ω·cm、可见光范围内平均透射率超过90%的ZAO薄膜.     

溶胶-凝胶法制备ITO透明导电薄膜的研究进展

ITO透明导电薄膜以其优良的透明导电性能在平面液晶显示(LCD)、电致发光(EC)等多个领域得到了广泛的应用.制备ITO薄膜的方法很多,其中采用溶胶-凝胶法制备ITO透明导电薄膜具有成本低,设备简单,工艺可控,有利于大面积成膜等优点,因而受到了广泛的关注.较详尽地介绍了ITO薄膜的透明导电机理、溶胶-凝胶法的工艺特征,并初步论述了溶胶-凝胶法制备ITO透明导电薄膜的应用和发展前景.     

溶胶-凝胶法与磁控溅射法制备ZnO薄膜性能对比研究

分别采用溶胶-凝胶(Sol-gel)法和射频(RF)反应磁控溅射法在普通玻璃片上制备出ZnO薄膜,利用X射线衍射、扫描电子显微镜、分光光度计、台阶仪等检测手段分别对其进行了分析比较.结果表明:相同基底和退火温度下,RF磁控溅射法制备的ZnO薄膜具有更优异的晶化质量;在波长390～850nm范围内的透射率都在80%以上,薄膜的吸收长波限值分别约为375nm和390nm,计算出其禁带宽度分别为3.31eV和3.18eV.     

溶胶-凝胶法制备ZnO薄膜及其性能研究

使用溶胶-凝胶法在P型Si(100)衬底上成功地制备了具有c轴择优取向性和高可见光透射率的多晶ZnO薄膜.通过XRD、SEM以及PL光谱等分析,表明:所制备的是结晶良好的ZnO薄膜,表面均匀致密,薄膜晶粒尺寸大约在15～60 nm,颗粒平均直径大约为38nm.由透射谱可知,制备的ZnO薄膜在可见光区域内薄膜的平均透射率在85%以上;由光致发光谱可知,室温下可观察到显著的紫外光发射,说明具有较好的光学性质.     

改进sol-gel技术BST薄膜的制备及性能研究

为了制备高性能BST薄膜,采用改进的溶胶 凝胶(sol gel)方法在Pt/Ti/SiO2/Si基片上制备出了不同结构、不同组成的BST薄膜;研究了BST薄膜的微观结构及其介电、铁电性能。XRD分析表明,当热处理温度为750℃时,得到完整钙钛矿结构的薄膜材料。SEM电镜显示,含种子层的Ⅱ、Ⅲ、Ⅳ3种不同类型的BST薄膜的结晶状况有很大改善。得到的BST20薄膜的介电峰温区覆盖常温段,介电常数为405,介电损耗为0.011,剩余极化强度为Pr=2.3μC·cm-2,矫顽场为Ec=45kV/cm。     

Thickness dependence of structural and optical properties of indium tin oxide nanofiber thin films prepared by electron beam evaporation onto quartz substrates

Indium tin oxide (ITO) thin films, produced by electron beam evaporation technique onto quartz substrates maintained at room temperature, are grown as nanofibers. The dependence of structural and optical properties of ITO thin films on the film thickness (99-662 nm) has been reported. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The particle size is found to increase with increasing film thickness without changing the preferred orientation along (2 2 2) direction. The optical properties of the films are investigated in terms of the measurements of the transmittance and reflectance determined at the normal incidence of the light in the wavelength range (250-2500 nm). The absorption coefficient and refractive index are calculated and the related optical parameters are evaluated. The optical band gap is found to decrease with the increase of the film thickness, whereas the refractive index is found to increase. The optical dielectric constant and the ratio of the free carrier concentration to its effective mass are estimated for the films.     

Polycrystalline growth and recrystallization processes in sputtered ITO thin films

Indium tin oxide (ITO) thin films with various thicknesses from 170 to 700 nm have been grown onto unheated glass substrates by sputtering from ceramic target, and subsequently annealed in vacuum at temperatures ranging from 250 to 350 °C. The structure, morphology and electro-optical characteristics of the ITO samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. Polycrystalline ITO growth has been found varying with film thickness. The thickness also determined the recrystallization achievable by annealing and the electro-optical thin film properties.     

Improved ITO thin films with a thin ZnO buffer layer by sputtering

In this paper, we report a buffering method of improving the quality of ITO thin films on glass by r.f. magnetron sputtering. By applying a ZnO buffer before the ITO deposition in the same run of sputtering, ITO films showed single (111)-oriented highly textured structure, while ITO films showed mixed-oriented polycrystalline structure on bare glass. A design of experiment was taken out to minimize the resistivity of ITO films in the deposition parameter space (oxygen ratio, total gas pressure, and temperature). Resistance measurements showed that the ITO films with ZnO buffers had a remarkable 50% decrease of resistivity comparing to those without ZnO buffers at optimized deposition condition. Room-temperature Hall effect measurements showed that the decrease in resistivity comes from a large increase of mobility and a slight increase of carrier density after forming gas annealing. The ZnO/glass may be a good alternative substrate to bare glass for producing high quality ITO films for advanced electro-optic applications.     

Electrical and optical properties of indium tin oxide films prepared on plastic substrates by radio frequency magnetron sputtering

The influence of deposition power, thickness and oxygen gas flow rate on electrical and optical properties of indium tin oxide (ITO) films deposited on flexible, transparent substrates, such as polycarbonate (PC) and metallocene cyclo-olefin copolymers (mCOC), at room temperature was studied. The ITO films were prepared by radio frequency magnetron sputtering with the target made by sintering a mixture of 90 wt.% of indium oxide (In₂O₃) and 10 wt.% of tin oxide (SnO₂). The results show that (1) average transmission in the visible range (400-700 nm) was about 85%-90%, and (2) ITO films deposited on glass, PC and mCOC at 100 W without supplying additional oxygen gas had optimum resistivity of 6.35 × 10⁻⁴ Ω-cm, 5.86 × 10⁻⁴ Ω-cm and 6.72 × 10⁻⁴ Ω-cm, respectively. In terms of both electrical and optical properties of indium tin oxide films, the optimum thickness was observed to be 150-300 nm.     

热处理对溶胶凝胶MoO3薄膜特性的影响

报道了以钼粉为原料,采用溶胶凝胶技术和旋转镀膜方法,制备MoO3纳米薄膜。采用TG-DSC分析、X射线衍射仪(XRD)、原子力显微镜(AFM)、红外光谱仪等方法分析了薄膜的特性。研究结果表明MoO3薄膜具有纳米颗粒结构,热处理使得MoO3颗粒长大,且表面平整度降低;XRD分析显示,250℃热处理的MoO3粉末已结晶(为α-MoO3),且沿(Ok0)方向取向强烈;随热处理温度的升高,MoO3微结构发生了相应的变化,Mo——O（2）、Mo——O（3）键振动吸收增强,且峰位移动。这些变化归因于热处理导致的MoO3颗粒形状、团聚状态的变化以及应变键的产生。     

ITO thin films deposited by advanced pulsed laser deposition

Indium tin oxide thin films were deposited by computer assisted advanced PLD method in order to obtain transparent, conductive and homogeneous films on a large area. The films were deposited on glass substrates. We studied the influence of the temperature (room temperature (RT)-180 °C), pressure (1-6 × 10^− 2 Torr), laser fluence (1-4 J/cm²) and wavelength (266-355 nm) on the film properties. The deposition rate, roughness, film structure, optical transmission, electrical conductivity measurements were done. We deposited uniform ITO thin films (thickness 100-600 nm, roughness 5-10 nm) between RT and 180 °C on a large area (5 × 5 cm²). The films have electrical resistivity of 8 × 10^− 4 Ω cm at RT, 5 × 10^− 4 Ω cm at 180 °C and an optical transmission in the visible range, around 89%.     

由溶胶-凝胶法制备的掺氧化钼的氧化钨薄膜的电致变色性能

钨粉和钼粉在过氧化氢的作用下生成氧化钨和氧化钼的溶液，加入冰乙酸进行酸化，然后在60℃下烘干，用适量的乙醇配得氧化钨和氧化钼母液。用ITO玻璃在该溶液浸泡后拉出并在150℃下烘干1h，便得到掺有氧化钼的氧化钨薄膜。X射线衍射（XRD）显示所得的薄膜为非晶态结构，扫描电镜（SEM）发现整个薄膜的表面较为平滑，但在极其微小的局部仍有裂纹颗粒生成。薄膜的伏安特性显示薄膜对锂离子具有一定的存储能力，其光的透过率测量表明溶胶-凝胶制备的掺有氧化钼的氧化钨薄膜对光具有很好的调节作用。     

Structural, electrical and optical properties of indium tin oxide thin films prepared by RF sputtering using different density ceramic targets

There is an active demand for the commercial indium tin oxide (ITO) target with density above 99% of the theoretical density (TD). Some works found the increase of the target density could lead to a slight decrease of the resistivity of the direct current (DC) sputtered ITO films, however, the possible effect of target density on the radio frequency (RF) sputtered ITO films is not clear. In this paper, ITO targets with different densities are successfully prepared. The structural, electrical and optical properties of the thin films deposited from these targets are studied at the substrate temperature of 750 °C. It is found that the target density has no effect on the above properties and the deposition rate of the RF sputtered ITO thin films, different from the DC sputtered films. So for the RF sputtered process, the target needs not high density so that the used target can be just compacted from the powders without sintering. All the as-prepared ITO films with different densities have a resistivity of 1.56 × 10⁻⁴ Ω cm and a transmittance of ∼87%, which are lower than the ITO films prepared at temperatures lower than 400 °C.     

Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process

Transparent thin films of Ga-doped ZnO (GZO), with Ga dopant levels that varied from 0 to 7 at.%, were deposited onto alkali-free glass substrates by a sol-gel process. Each spin-coated film was preheated at 300 °C for 10 min, and then annealed at 500 °C for 1 h under air ambiance. The effects of Ga dopant concentrations on crystallinity levels, microstructures, optical properties, and electrical resistivities of these ZnO thin films were systematically investigated. Photoluminescence spectra of GZO thin films were examined at room temperature. XRD results revealed that the undoped ZnO thin films exhibited a preferred orientation along the (002) plane and that the ZnO thin films doped with Ga showed degraded crystallinity. Experimental results also showed that Ga doping of ZnO thin films could markedly decrease surface roughness, improve transparency in the visible range, and produce finer microstructures than those of undoped ZnO thin films. The most promising films for transparent thin film transistor (TTFT) application produced in this study, were the 3 and 5 at.% Ga-doped ZnO thin films, both of which exhibited an average transmittance of 90.6% and an RMS roughness value of about 2.0 nm.