A new method for measuring wetness of flowing steam based on surface plasmon resonance

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu₂ZnSn(S,Se)₄ (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se₂. PACS number: 08.37.-d; 61.72.Mm; 71.35.-y     

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Cu₂ZnSnSe₄ (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe _x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.     

不同旋涂方式对铜锌锡硫硒薄膜及相应器件性能的影响

晶体质量是决定铜锌锡硫硒(Cu₂ZnSn(S,Se)₄, CZTSSe)吸收层薄膜吸收效率的关键,旋涂是溶液法制备CZTSSe吸收层的第一步,因此旋涂方式的选择至关重要。为了探究不同旋涂方式对CZTSSe吸收层薄膜质量和相应器件性能的影响,分别采用三组不同的旋涂方式制备铜锌锡硫(Cu₂ZnSnS₄, CZTS)前驱体薄膜及CZTSSe吸收层薄膜,并利用X射线衍射仪(XRD)、能谱仪(EDS)、显微拉曼光谱仪(Raman)、场发射扫描电子显微镜(FE-SEM)分析了不同旋涂方式对所制备的CZTSSe吸收层薄膜晶体结构、元素成分、相纯度、表面形貌的影响。同时,采用电流密度-电压(J-V)测试和外量子效率(EQE)测试对CZTSSe吸收层薄膜太阳电池的光电特性进行了表征。结果表明:旋涂7周期,且第一周期烘烤之前旋涂2次的效果最好,所制备的CZTS前驱体薄膜均匀,无裂纹,CZTSSe吸收层薄膜结晶度更高,薄膜表面更平整致密,晶粒大小更均匀,实现了9.63%的光电转换效率。通过对采用不同旋涂方式制备的器件的性能参数进行统计分析,得出新的旋涂方式可以提高CZTSSe薄膜太阳电池的可重复性,为将来可能的大规模商业化应用做铺垫。     

Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

The nanomechanical properties of BiFeO₃ (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO₂/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young''s modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation.     

Structural and electrical properties of LaNiO3 thin films grown on (1 0 0) and (0 0 1) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO₃ thin films were deposited on SrLaAlO₄ (1 0 0) and SrLaAlO₄ (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700 °C in tube oven. Structural, morphological, and electrical properties of the LaNiO₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO₃ thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO₃ grown onto (1 0 0) and (0 0 1) oriented SrLaAlO₄ single crystal substrates reveled average grain size by AFM approximately 15–30 nm and 20–35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces.     

CuInSe2 films prepared by three step pulsed electrodeposition. Deposition mechanisms, optical and photoelectrochemical studies

p-Type semiconducting copper indium diselenide thin films have been prepared onto In₂O₃:Sn substrates by a recently developed pulse electrodeposition method that consists in repeated cycles of three potential application steps. The Cu–In–Se electrochemical system and the related single component electrolytes were studied by cyclic voltammetry to identify the electrode processes and study the deposition processes. In situ atomic force microscopy measurements during the first 100 deposition cycles denote a continuous nucleation and growth mechanism. Particles removed by film sonication from some of the films were characterized by transmission electron microscopy and determined to consist in nanoscopic and crystalline CuInSe₂. The remaining film is still crystalline CuInSe₂, as assessed by X-ray diffraction.The chemical characterization by combined X-ray photoelectron spectroscopy, X-ray fluorescence and inductively coupled plasma optical emission spectroscopy, showed that films were Cu-poor and Se-poor. Raman characterization of the as-grown films showed that film composition varies with film thickness; thinner films are Se-rich, while thicker ones have an increased Cu–Se content. Different optical absorption bands were identified by the analysis of the UV–NIR transmittance spectra that were related with the presence of CuInSe₂, ordered vacancy compounds, Se, Cu_2−xSe and In₂Se₃. The photoelectrochemical activity confirmed the p-type character and showed a better response for the films prepared with the pulse method.     

Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

In this article, the resistive switching (RS) behaviors in Lu₂O₃ thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous Lu₂O₃ thin films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on flexible polyethylene terephthalate substrate. The structural and morphological changes of the Lu₂O₃ thin film were characterized by x-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy analyses. The Ru/Lu₂O₃/ITO flexible memory device shows promising RS behavior with low-voltage operation and small distribution of switching parameters. The dominant switching current conduction mechanism in the Lu₂O₃ thin film was determined as bulk-controlled space-charge-limited-current with activation energy of traps of 0.33 eV. The oxygen vacancies assisted filament conduction model was described for RS behavior in Lu₂O₃ thin film. The memory reliability characteristics of switching endurance, data retention, good flexibility, and mechanical endurance show promising applications in future advanced memory.     

Texture effect on the electrochemical properties of LiCoO2 thin films prepared by PLD

LiCoO₂ thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO₂/Si (Pt) and Au/MgO/Si (Au) substrates, respectively. Crystal structures and surface morphologies of thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The LiCoO₂ thin films deposited on the Pt substrates exhibited a preferred (0 0 3) texture with smooth surfaces while the LiCoO₂ thin films deposited on the Au substrates exhibited a preferred (1 0 4) texture with rough surfaces. The electrochemical properties of the LiCoO₂ films with different textures were compared with charge-discharge, dQ/dV, and Li diffusion measurements (PITT). Compared with the (1 0 4)-textured LiCoO₂ thin films, the (0 0 3)-textured thin films exhibited relatively lower electrochemical activity. However, the advantage of the (1 0 4)-textured film only remained for a small number of cycles due to the relatively faster capacity fade. Li diffusion measurements showed that the Li diffusivity in the (0 0 3)-textured film is one order of magnitude lower than that in the (1 0 4)-textured film. As discussed in this paper, we believe that Li diffusion through grain boundaries is comparable to or even faster than Li diffusion through the grains.     

Structural,optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering

Element doping into the Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu₂In_xZn_1-xSn(S,Se)₄ (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu₂ZnSnS₄ (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P_In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In³⁺ into the main lattice of CZTSSe. The partial Zn²⁺ cations were substituted by In³⁺ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P_In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P_In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P_In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm²V^?1s^?1, which is a potential material as the absorption layer of high-performance solar cells.     

Phase and microstructural evolution of yttrium-doped nanocrystalline alumina: A contribution of advanced microscopy techniques

Well-dispersed nano-crystalline transition alumina suspensions were mixed with yttrium chloride aqueous solutions, with the aim of producing Al₂O₃-Y₃Al₅O₁₂ (YAG) composite powders. DTA analysis allowed to highlight the role of yttrium on the α-phase crystallization path. Systematic XRD and HRTEM analyses were carried out in parallel on powders calcined in a wide temperature range (600-1300 °C) in order to follow phase and microstructural evolution. A thin, homogeneous yttrium-rich layer was yielded on the alumina particles surface; yttrium diffusion into the alumina matrix was negligible up to 1150 °C whereas, starting from 1200 °C, aggregates of partially sintered alumina particles appeared, stuck together by yttrium-rich thin films. Moreover, in the yttrium-richer zones, such as alumina grain boundaries and triple joints, yttrium-aluminates precipitated at alumina particles surface. Finally, at 1300 °C, alumina-YAG composite powders were produced, in which YAG was homogenously distributed among the alumina grains.     

Ag-TiO2多孔薄膜及其非紫外光辐照下的超亲水特性

采用溶胶凝胶法，以钛酸丁酯为前驱体、硝酸银络合物为银源、聚乙二醇2000（PEG2000）作为结构导向剂，制备超亲水多孔Ag-TiO₂复合薄膜。用X射线衍射仪、X射线光电子能谱仪、扫描电镜、原子力显微镜表征薄膜晶相结构、化学成分以及表面形貌。根据静态水接触角、动态润湿时间、超亲水长效稳定性综合评价不同Ag含量及PEG2000添加量薄膜的超亲水性能。研究发现，掺杂Ag与PEG2000对薄膜在非紫外光下的超亲水特性具有协同作用，掺杂Ag明显提高薄膜动态润湿速度及可见光响应，表面粗糙多孔结构有利于避光条件下的长效超亲水特性。Ag含量10%、PEG2000掺杂量5%的Ag-TiO₂复合薄膜在自然光条件下已具备优良的超亲水性能；水滴0.2 s内即可在表面完全铺展到0°；避光条件下保存，超亲水时效性可达到30 d以上。在可见光活化下即可强化超亲水性能，具有良好的防雾效果。     

Influence of H2Se concentration on Se-rich CZTSSe absorbers sputtered with a ceramic quaternary target

Se-rich CZTSSe absorbers with large grains are important contributors to the performances of CZTSSe solar cells and can be fabricated by the selenization of as-sputtered CZTS precursors. To explore the effects of the H₂Se concentration in the annealing atmosphere on the growth of CZTSSe phases, sputtered CZTS precursors were subjected to annealing with a mixed gas of Ar and H₂Se at different concentrations. A series of characterization techniques were employed to investigate the morphologies, phase structures, surface states, and elemental compositions of the annealed samples. The results demonstrate that the H₂Se concentration in the annealing atmosphere can significantly affect the grain size, suppressing the decomposition of CZTSSe absorbers. When the H₂Se concentration in the annealing atmosphere reaches 4.5 vol%, a selenium-enriched CZTSSe absorber that is composed of the pure kesterite structure and that has densely packed large grains and a high concentration of selenium was obtained. The highest efficiency of 10.12% of CZTSSe solar cells was achieved herein.     

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb_0.90Ca_0.10TiO₃ (PCT10) thin films deposited using La_0.50Sr_0.50CoO₃ (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO₆ octahedron unit due to the reduction of lattice parameters. Remnant polarization (P_r) values are about 30 μC/cm² and 12 μC/cm² for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films.     

A new regime for high rate growth of nanocrystalline diamond films using high power and CH4/H2/N2/O2 plasma

In this work, we report high growth rate of nanocrystalline diamond (NCD) films on silicon wafers of 2 inches in diameter using a new growth regime, which employs high power and CH₄/H₂/N₂/O₂ plasma using a 5 kW MPCVD system. This is distinct from the commonly used hydrogen-poor Ar/CH₄ chemistries for NCD growth. Upon rising microwave power from 2000 W to 3200 W, the growth rate of the NCD films increases from 0.3 to 3.4 μm/h, namely one order of magnitude enhancement on the growth rate was achieved at high microwave power. The morphology, grain size, microstructure, orientation or texture, and crystalline quality of the NCD samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and micro-Raman spectroscopy. The combined effect of nitrogen addition, microwave power, and temperature on NCD growth is discussed from the point view of gas phase chemistry and surface reactions.     

Effects of annealing temperature on the photocatalytic activity of N-doped TiO2 thin films

The effects of annealing temperature on the photocatalytic activity of nitrogen-doped (N-doped) titanium oxide (TiO₂) thin films deposited on soda-lime-silica slide glass by radio frequency (RF) magnetron sputtering have been studied. Glancing incident X-ray diffraction (GIAXRD), Raman spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectra were utilized to characterize the N-doped TiO₂ thin films with and without annealing treatment. GIAXRD and Raman results show as-deposited N-doped TiO₂ thin films to be nearly amorphous and that the rutile and anatase phases coexisted when the N-doped TiO₂ thin films were annealed at 623 and 823 K for 1 h, respectively. SEM microstructure shows uniformly close packed and nearly round particles with a size of about 10 nm which are on the slide glass surface for TiO₂ thin films annealed at 623 K for 1 h. AFM image shows the lowest surface roughness for the N-doped TiO₂ thin films annealed at 623 K for 1 h. The N-doped TiO₂ thin films annealed at 623 K for 1 h exhibit the best photocatalytic activity, with a rate constant (k_a) of about 0.0034 h⁻¹.     

Effect of compressed TiO2 nanoparticle thin film thickness on the performance of dye-sensitized solar cells

In this study, dye-sensitized solar cells (DSSCs) were fabricated using nanocrystalline titanium dioxide (TiO₂) nanoparticles as photoanode. Photoanode thin films were prepared by doctor blading method with 420 kg/cm² of mechanical compression process and heat treatment in the air at 500°C for 30 min. The optimal thickness of the TiO₂ NP photoanode is 26.6 μm with an efficiency of 9.01% under AM 1.5G illumination at 100 mW/cm². The efficiency is around two times higher than that of conventional DSSCs with an uncompressed photoanode. The open-circuit voltage of DSSCs decreases as the thickness increases. One DSSC (sample D) has the highest conversion efficiency while it has the maximum short-circuit current density. The results indicate that the short-circuit current density is a compromise between two conflict factors: enlargement of the surface area by increasing photoanode thickness and extension of the electron diffusion length to the electrode as the thickness increases.     

Enhanced photocatalytic activity of Au-buffered TiO2 thin films prepared by radio frequency magnetron sputtering

Au-buffered TiO₂ thin films have been prepared by radio frequency magnetron sputtering method. The structural and morphological properties of the thin films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The photocatalytic activity of the samples was evaluated by the photodecomposition of methylene blue. The Au-buffer thin layer placed between the TiO₂ thin films significantly enhanced photocatalytic activity by 50%. Annealing the Au-buffered TiO₂ thin film at 600 °C decreased the film roughness, but it increased the surface area and anatase crystalline size, enhancing the photocatalytic activity.     

Optical and photoelectrochemical properties of a TiO2 thin film doped with a ruthenium–tungsten bimetallic complex

Optical and photoelectrochemical (PEC) properties of a TiO₂ thin film electrode doped with a new variation of ruthenium–(4,4′dimethyl-2,2′-bipyridine)–isothiocyanato–tungsten[bis-(phenyl-1,2-ethilenodithiolenic)] bimetallic complex (BM) were investigated. Physical adsorption process was used to immobilise the BM on the TiO₂ thin film. Crystalline structure and surface morphology of the thin films were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) techniques. N3 commercial dye was also used as a dopant to the TiO₂ films for comparison. Light absorption spectra and bandgap energy of the thin films were determined using UV–vis spectroscopy. Light absorption of the TiO₂ thin film doped with BM was better than the TiO₂ doped with the N3 commercial dye. Band edges of the TiO₂ thin film and the BM were determined via cyclic voltammetry (CV) measurements. Top-edge of the BM valence band (VB) was more positive than the bottom edge of the conduction band (CB) of the TiO₂ film (vs. NHE). PEC analysis indicated that photocurrent of TiO₂ doped with the BM electrode was higher than TiO₂ doped with the N3 in the beginning of illumination process, but the performance was defeated after a while. Based on the optical properties and the PEC analyses, BM has potential to be used as dye sensitisers for a PEC cell.     

Electrical properties of nanoporous F doped SiO2 low-k thin films prepared by sol-gel method with catalyst HF

Using hydrofluoric acid as acid catalyst, F doped nanoporous low-k SiO₂ thin films were prepared through sol-gel method. Compared with the hydrochloric acid catalyzed film, the films showed better micro structural and electrical properties. The capacitance-voltage and current-voltage characteristics of F doped SiO₂ thin films were then studied based on the structures of metal-SiO₂-semiconductor and metal-SiO₂-metal, respectively. The density of state (DOS) of samples deposited on metal is found to decrease to a level of 2 × 10¹⁷ eV⁻¹ cm⁻³. The values of mobile ions, fix positive charges, trapped charges and the interface state density between the SiO₂/Si interfaces also decrease obviously, together with the reduction of the leakage current density and the dielectric constant, which imply the improvement of the electrical properties of thin films. After annealing at a temperature of 450^∘C, the lower values of the leakage current density and dielectric constant could be obtained, i.e. 1.06 × 10⁻⁹ A/cm² and 1.5, respectively.     

Charge transport mechanisms and memory effects in amorphous TaNx thin films

Amorphous semiconducting materials have unique electrical properties that may be beneficial in nanoelectronics, such as low leakage current, charge memory effects, and hysteresis functionality. However, electrical characteristics between different or neighboring regions in the same amorphous nanostructure may differ greatly. In this work, the bulk and surface local charge carrier transport properties of a-TaN_x amorphous thin films deposited in two different substrates are investigated by conductive atomic force microscopy. The nitride films are grown either on Au (100) or Si [100] substrates by pulsed laser deposition at 157 nm in nitrogen environment. For the a-TaN_x films deposited on Au, it is found that they display a negligible leakage current until a high bias voltage is reached. On the contrary, a much lower threshold voltage for the leakage current and a lower total resistance is observed for the a-TaN_x film deposited on the Si substrate. Furthermore, I-V characteristics of the a-TaN_x film deposited on Au show significant hysteresis effects for both polarities of bias voltage, while for the film deposited on Si hysteresis, effects appear only for positive bias voltage, suggesting that with the usage of the appropriate substrate, the a-TaN_x nanodomains may have potential use as charge memory devices.