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1.
Photocatalysts nano A2TinO2n+1 (A = Li, Na, K) were prepared successfully by novel hydrothermal synthesis process. Powders were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV-vis) absorption spectra and field-emission scanning electron microscope (FE-SEM) measurements. These results showed that the compositions of lithium, sodium and potassium titanates were Li2TiO3, Na2Ti3O7 and K2Ti8O17, respectively. The nano crystals of Li2TiO3 were self-assembled as snowflakes while that of Na2Ti3O7 and K2Ti8O17 were nanorods. Photocatalytic properties of alkali titanates were also investigated. The results indicated that alkali titanates as prepared have higher photocatalytic activities compared with P25 TiO2 in the degradation of chloroform under UV light irradiation. A combination of K2Ti8O17 and NiO produces a photocatalyst effective for the degradation of chloroform in aqueous solution. The framework of the tunnel structure was suitable for accommodating cocatalysts such as NiO to induce a strong interaction between the active species and cocatalysts. Na2Ti3O7 has high photocatalytic activity under visible-light irradiation due to its strong absorption in the visible light region. The photocatalytic properties of Li2TiO3 are inferior to that of Na2Ti3O7 and K2Ti8O17 due to its mono-perovskite structure.  相似文献   

2.
TiO2(B) a new form of titanium dioxide, the octatitanate K2Ti8O17 and intergrowths between K2 Ti4 O9 and K2 Ti8 O17 have been prepared by hydrolysis of K2 Ti4 O9 followed by heating at 500°C. TiO2 (B) and K2Ti8 O17 have the host covalent framework of the bronzes Nax TiO2 and K3Ti8O17 respectively.  相似文献   

3.
From the partial study of the systems “BaOTiO2A2Ti6O13” three series of non-stoichiometric titanates A2?2xBa3xTi6?xO13 were isolated for A = Na, K, Rb with x ranging from 0 to about 0.2. The structural evolution of these oxides, which are isostructural of Na2Ti6O13 (1) was studied and discussed.  相似文献   

4.
The ionic conductivity of polycrystalline samples of three lithium germanates: Li4GeO4, Li2GeO3, and Li2Ge7O15, has been determined using a c techniques and complex plane analysis. Conductivities at 400°C are 8.7 × 10?5, 1.5 × 10?5, and 1.4 × 10?7 (Ω·cm)?1 respectively. The conductivity of Li4GeO4 rises appreciably in the range 700–750°C.  相似文献   

5.
(La0.05Bi0.95)2Ti2O7 (LBTO) thin films had been successfully prepared on P-type Si substrate by chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of (La0.05Bi0.95)2Ti2O7 is more stable than the phase of Bi2Ti2O7 without La substitution. The films exhibited good insulating properties with room temperature resistivities in the range of 1012-1013 Ω cm. The dielectric constant of the film annealed at 550 °C at 100 kHz was 157 and the dissipation factor was 0.076. The LBTO thin films can be used as storage capacitors in DRAM.  相似文献   

6.
The electron transport and magnetic properties of the AxP8W32O112 bronzes (A = K, Rb, Tl) have been studied as a function of temperature. These compounds are characterized by a Pauli paramagnetism. The evolution of conductivity, ranging from 1260 (Ωcm)?1 to 1610 (Ωcm)?1 at 300K is characteristic of a metal. Owing to the presence of ReO3 type slabs, these properties can be interpreted by the band model conduction developed by Goodenough for NaxWO3 bronzes.  相似文献   

7.
Li2Ti3O7 with the ramsdellite-type structure undergoes lithium insertion reactions with n-BuLi. Li2+xTi3O7 phases form with x = 0.5 and 1.0 at room temperature and at 50°C, respectively. The ESR spectrum of Li3Ti3O7 confirms the partial reduction of Ti4+ ions to Ti3+. The electrical conductivity of the fully lithiated phase is several orders of magnitude higher than that of the host compound, suggesting charge hopping in the mixed valent lithiated compound.  相似文献   

8.
SrLa2Al2O7 and SrGd2Al2O7 belong to the structural type Sr3Ti2O7. In SrGd2Al2O7 strontium and gadolinium occupy respectively the 12 and 9 coordinated sites, whereas in SrLa2Al2O7 the homologous cations are statistically distributed. The fluorescence spectra of both phases activated by Eu3+ ions show that the only possible position of Eu3+ is the 9 coordinated site.  相似文献   

9.
Gd2Ti2O7: Eu3+ thin film phosphors were fabricated by a sol-gel process. X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800 °C and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. The doped Eu3+ showed orange-red emission in crystalline Gd2Ti2O7 phosphor films due to an energy transfer from Gd2Ti2O7 host to them. Both the lifetimes and PL intensity of the Eu3+ increased with increasing the annealing temperature from 800 to 1000 °C, and the optimum concentrations for Eu3+ were determined to be 9 at.%. of Gd3+ in Gd2Ti2O7 film host.  相似文献   

10.
Single crystals of Na2CaSiO4 prepared at 30 kbar and 1500°C are cubic with a = 22.456A?. The polycrystalline compositions Na1.9Ca0.9Al0.1SiO4 and Na1.8CaSi0.8P0.2O4 can also be indexed using a = 22.458 and 22.471 A?, respectively. The Ca carnegieites Na2CaSiO4, Na1.9Ca0.9Al0.1SiO4, and Na1.8CaSi0.8P0.2O4 have Na ion conductivities of only 5?8 × 10?6 (ω-cm)?1 at 300°C.  相似文献   

11.
Jin Won Kim 《Thin solid films》2010,518(22):6514-6517
V-doped K0.5Bi4.5Ti4O15 (K0.5Bi4.5  x/3Ti4  xVxO15, KBTiV-x, x = 0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 °C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2Pr) was 75 μC/cm2 at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 × 108 at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K0.5Bi4.5Ti4O15 thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K0.5Bi4.5Ti4O15 thin film.  相似文献   

12.
The stability of the AnBnO3n+2 phases, whose structure is derived from the perovskite structure, was investigated through X-Ray diffraction, in the following systems: La2Ti2O7 - CaTiO3, Nd2Ti2O7 - CaTiO3 and Ca2Nb2O7 - CaTiO3. Some of the phases quenched from the liquid are metastable and include vacancies overA and B sites. A model of formation of these phases is proposed.  相似文献   

13.
成鹏飞  宋江  曹壮 《材料导报》2017,31(Z1):149-153, 163
通过Ca替换CaCu_3Ti_4O_(12)晶胞中的所有Cu,建立了包含TiO6八面体扭转的CaTiO3;通过Cu替换CaTiO32×2×2超胞中3/4的Ca,建立了不包含CuO_4正方形的CaCu_3Ti_4O_(12)。采用Materials Studio软件的CASTEP模块,对比了上述晶体和标准晶体成键状况、能带结构、态密度及介电函数,分析了TiO6八面体扭转和CuO_4正方形的影响,发现了Cu-O键或CuO_4正方形对CaCu_3Ti_4O_(12)光频介电常数的关键性作用。研究结果提供了通过内禀机制优化CaCu_3Ti_4O_(12)材料介电性能的新途径。  相似文献   

14.
Hollandite-type compounds, Rb2Cr8O16, K2Cr2V6O16 and K2V8O16, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb2Cr8O16 confirms that the structure is similar to that of K2Cr8O16. Magnetic measurements indicate that Rb2Cr8O16 is ferromagnetic below 295K, K2Cr2V6O16 paramagnetic down to 77K and K2V8O16 has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.  相似文献   

15.
The effect of CaO-SiO2-B2O3 (CSB) glass addition on the sintering temperature and dielectric properties of BaxSmyTi7O20 ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to BaxSmyTi7O20 ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of BaxSmyTi7O20 ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm2Ti4O12 and BaTi4O9. The material possesses excellent dielectric properties: ?r = 61, tan δ = 1.5 × 10−4 at 10 GHz, temperature coefficient of dielectric constant is −75 × 10−6 °C−1.  相似文献   

16.
A novel route for the preparation of Na2Ti6O13 nanobelts by mechanochemical treatment of the TiCl4-Na2SO4·10H2O-Na2CO3 mixture for 5 min followed by molten salt synthesis is described. The mixture of the amorphous TiO2 and NaCl-Na2SO4·xH2O-Na2CO3 salt matrix was generated during milling. The molten salt synthesis of the Na2Ti6O13 nanobelts with lengths up to 0.5-2 μm and with a width in the range of 20-250 nm was carried out in the temperature range of 700-800 °C for 1 h. The partial formation of titanate nanotubes was observed after annealing at 600 °C and washing procedure. X-ray diffraction (XRD), transmission electron microscopy (TEM) and differential thermal analysis (DTA) were used to characterize the formation and structure of Na2Ti6O13 nanobelts.  相似文献   

17.
In the present work, K2Ti2O5, K2Ti4O9 and K2Ti6O13 are synthesized by solid state method. Their structures and morphologies are characterized by X-ray diffraction, Raman spectra and scanning electron microscopy. The binding energies of K, Ti and O in potassium titanates were then evaluated by X-ray photoelectron spectroscopy and compared with those in K/TiO2. Finally the corresponding K ion exchange properties are investigated by synthesizing NO oxidation catalysts with Co(NO3)2 precursor. It is found that the binding energy of K in K2Ti2O5 is much higher than those in K2Ti4O9and K2Ti6O13, and because of which, it shows quite different catalytic performances. Compared with other potassium titanates, the K in K2Ti2O5 is much easier to be exchanged out.  相似文献   

18.
Na2Ti2O4(OH)2 nanotubes were obtained by hydrothermal reaction of TiO2 with concentrated NaOH solution. CdS nanoparticles were then decorated on Na2Ti2O4(OH)2 nanotubes through partial ion-exchange method. The composite photocatalysts were characterized by X-ray diffraction (XRD), ultraviolet-visible spectra (UV-vis), transmission electron microscope (TEM), etc. The results showed that CdS nanoparticles of 5-6 nm were anchored on the surface of the Na2Ti2O4(OH)2 nanotubes. Under irradiation of visible light (λ ≥ 430 nm), the prepared CdS/Na2Ti2O4(OH)2 showed high photoactivity for hydrogen production.  相似文献   

19.
Ferroelectric Na0.5La0.5Bi4Ti4O15 (NaLaBTi) thin films were prepared by a chemical solution deposition method. The NaLaBTi thin films annealed at 750 °C under oxygen atmosphere were randomly oriented polycrystalline. Electrical properties of the NaLaBTi thin films were compared to Na0.5Bi4.5Ti4O15 thin films and better properties were observed in the NaLaBTi thin films. Remnant polarization (2Pr) and coercive electric field (2Ec) were 43 µC/cm2 and 204 kV/cm at an applied electric field of 478 kV/cm, respectively. Leakage current density was 1.95 × 10− 6 A/cm2 at 100 kV/cm. Dielectric constant and dielectric loss were 805 and 0.05 at 1 kHz, respectively. Switchable polarization was suppressed by 15% after 1.44 × 1010 switching cycles.  相似文献   

20.
Na2Ti3O7 nanowires with diameters of about 80-130 nm and lengths up to several tens of micrometers are synthesized via a simple hydrothermal method and characterized by the field-emission scanning electron microscopy and X-ray diffraction. Back-gate field-effect transistors based on these nanowires are fabricated on indium tin oxide glass substrates with polymethyl-methacrylate-co-glyciclyl-methacrylate as the gate insulator layers. Typical p-type semiconductor material properties are observed in our investigations. The field-effect mobility is about 0.1 cm2/Vs. The capacitance per unit area of the dielectric is 3.43 nF/cm2 (dielectric constant, k = 3.9). The on/off ratio is around 103 at the conduction of 10 V.  相似文献   

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