Role of Nitrogen in the Crystallization of Silicon Nitride-Doped Chalcogenide Glasses

Glasses in the Ge-S, Ge-As-Se, and Ge-As-Se-Te systems, doped with Si₃N₄, were melted after sealing under reduced pressure, and their crystallization behavior was examined using differential thermal analysis/differential scanning calorimetry and X-ray diffractometry. The effect of Si₃N₄ doping on the suppression of the crystallization of chalcogenide glasses was confirmed for all three systems and is attributed to the increased crosslinking upon substitution of the chalcogens by nitrogen atoms, presumably forming structural units that are similar to Ge₃N₄.     

Formation and Stability of β-Quartz Solid-Solution Phase in the Li-Si-Al-O-N System

The development of crystalline phases in lithium oxynitride glass-ceramics was examined, with particular emphasis placed on the effect of the nitrogen source (AlN or Si₃N₄) on the formation and stability of a β-quartz solid-solution ( ss ) phase. Oxynitride glasses derived from the Li-Si-Al-O-N system were heat-treated at temperatures up to 1200°C to yield glass-ceramics in which β-quartz( ss ) and β-spodumene( ss ) of approximate composition Li₂OAl₂O₃4SiO₂ formed as major phases and in which X-phase (Si₃Al₆O₁₂N₂) and silicon oxynitride (Si₂N₂O) were present as minor phases. The nitrogen-containing β-quartz( ss ) phase that was prepared with AlN was stable at 1200°C; however, the use of Si₃N₄ as the nitrogen source was significantly less effective in promoting such thermal stabilization. Lattice parameter measurements revealed that AlN and Si₃N₄ had different effects on the crystalline structures, and it was proposed that the enhanced thermal stability of the β-quartz( ss ) phase that was prepared with AlN was due to both the replacement of oxygen by nitrogen and the positioning of excess Al³⁺ ions into interstitial sites within the β-quartz( ss ) crystal lattice.     

Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure

Oxidized amorphous Si₃N₄ and SiO₂ powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si₂ON₂) was observed from amorphous silicon nitride (Si₃N₄) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si₂ON₂ coexisted with β-Si₃N₄ with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si₂ON₂. Pressing a mixture of amorphous Si₃N₄ of lower oxygen (1.5 wt%) and SiO₂ under 1.0–5.0 GPa between 1000° and 1350°C did not give Si₂ON₂ phase, but yielded a mixture of α,β-Si₃N₄, quartz, and coesite (a high-pressure form of SiO₂). The formation of Si₂ON₂ from oxidized amorphous Si₃N₄ seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure.     

Pressureless Sintering of α-Si3N4 Porous Ceramics Using a H3PO4 Pore-Forming Agent

A new method for preparing high bending strength porous silicon nitride (Si₃N₄) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H₃PO₄) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si₃N₄ ceramics are investigated, as a function of the content of H₃PO₄. The resultant high porous Si₃N₄ ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H₃PO₄ and by the continous reaction of SiP₂O₇ binder, which could bond on to the Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.     

Combustion Synthesis of Si3N4 by Selective Reaction of Silicon with Nitrogen in Air

Silicon nitride (Si₃N₄) was synthesized by a selective combustion reaction of silicon powder with nitrogen in air. The α/β-Si₃N₄ ratio of the interior product could be tailored by adjusting the Si₃N₄-diluent content in the reactant mixtures. The synthetic β-Si₃N₄ showed a well-crystallized rod-like morphology. Mechanical activation greatly enhanced the reactivity of silicon powder, and the slow oxidation of silicon at the sample surface promoted the combustion reaction in air. The formation mechanism of Si₃N₄ was analyzed based on a proposed N₂/O₂ diffusion kinetic model, and the calculated result is in good agreement with the experimental phenomenon.     

Design, Fabrication, and Characterization of Silicon Nitride Particle-Reinforced Silicon Nitride Matrix Composites by Chemical Vapor Infiltration

Silicon nitride particle-reinforced silicon nitride matrix composites were fabricated by chemical vapor infiltration (CVI). The particle preforms with a bimodal pore size distribution were favorable for the subsequent CVI process, which included intraagglomerate pores (0.1–4 μm) and interagglomerate pores (20–300 μm). X-ray fluorescence results showed that the main elements of the composites are Si, N, and O. The composite is composed of α-Si₃N₄, amorphous Si₃N₄, amorphous SiO₂, and a small amount of β-Si₃N₄ and free silicon. The α-Si₃N₄ transformed into β-Si₃N₄ after heat treatment at 1600°C for 2 h. The flexural strength, dielectric constant, and dielectric loss of the Si₃N_4(p)/Si₃N₄ composites increased with increasing infiltration time; however, the pore ratios decreased with increasing infiltration time. The maximum value of the flexural strength was 114.07 MPa. The dielectric constant and dielectric loss of the composites were 4.47 and 4.25 × 10⁻³, respectively. The present Si₃N_4(p)/Si₃N₄ composite is a good candidate for high-temperature radomes.     

Thermogravimetry, Differential Thermal Analysis, and Mass Spectrometry Study of the Silicon Nitride–Boron Carbide–Carbon Reaction System for the Synthesis of Silicon Carbide–Boron Nitride Composites

Thermogravimetry, differential thermal analysis, mass spectrometry, and X-ray diffractometry were used to study the reaction process of the in situ reaction between Si₃N₄, B₄C, and carbon for the synthesis of silicon carbide–boron nitride composites. Atmospheres with a low partial pressure of nitrogen (for example argon + 5%–10% nitrogen) seemed to inhibit denitrification and also maintain a high reaction rate. However, the reaction rate decreased significantly in a pure nitrogen atmosphere. The experimental mass spectrometry results also revealed that B₄C in the Si₃N₄–B₄C–C system inhibited the reaction between Si₃N₄ and carbon and, even, the decomposition of Si₃N₄. The present results indicate that boron could be a composition stabilizer for ceramic materials in the Si-N-C system used at high temperature.     

Tribological Behavior of Mo5Si3-Particle-Reinforced Silicon Nitride Composites

The tribological behavior of Mo₅Si₃-particle-reinforced silicon nitride (Si₃N₄) composites was investigated by pin-on-plate wear testing under dry conditions. The friction coefficient of the Mo₅Si₃–Si₃N₄ composites and Si₃N₄ essentially decreased slowly with the sliding distance, but showed sudden increase for several times during the wear testing. The average friction coefficient of the Si₃N₄ decreased with the incorporation of submicrometer-sized Mo₅Si₃ particles and also as the content of Mo₅Si₃ particles increased. When the Mo₅Si₃–Si₃N₄ composites were oxidized at 700°C in air, solid-lubricant MoO₃ particles were generated on the surface layer. Oxidized Mo₅Si₃–Si₃N₄ composites showed self-lubricating behavior, and the average friction coefficient and wear rate of the oxidized 2.8 wt% Mo₅Si₃–Si₃N₄ composite were 0.43 and 0.72 × 10⁻⁵ mm³ (N·m)⁻¹, respectively. Both values were ∼30% lower than those for the Si₃N₄ tested in an identical manner.     

Fractography, Mechanical Properties, and Microstructure of Commercial Silicon Nitride–Titanium Nitride Composites

Commercial-grade Si₃N₄–TiN composites with 0, 10, 20, and 30 wt% TiN content have been characterized. Submicrometer grain-size Si₃N₄ was reinforced with fine TiN grains. Density, Young's modulus, coefficient of thermal expansion, and fracture toughness increased linearly with TiN content. Increased strength was observed in the Si₃N₄+20 wt% TiN, and Si₃N₄+30 wt% TiN composites. Fractography was used to characterize the different types of fracture origins. Improvements in toughness and strength are due to residual stresses in the Si₃N₄ matrix and the TiN particles. A threefold improvement in dry wear resistance of the Si₃N₄+30 wt% TiN composite over the Si₃N₄ matrix was observed.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Microstructure of Y2O3 Fluxed Hot-Pressed Silicon Nitride

Detailed microstructural analysis of a 10 mol% Y₂O₃ fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si₃N₄ grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y₂Si(Si₂O₃N₄), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si₃N₄ grains enveloped by Y₂Si(Si₂O₃N₄), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process.     

Molecular Dynamics Study of Atomic Structure and Diffusion Behavior in Amorphous Silicon Nitride Containing Boron

We have performed molecular dynamics simulations of amorphous Si₃N₄ containing boron (Si-B-N). We have examined short-range atomic arrangements and self-diffusion constants of amorphous Si-B-N systems with various boron contents. Our simulations show that boron atoms are threefold coordinated by nitrogen atoms and that nitrogen atoms are bonded to both silicon and boron atoms in the amorphous network of Si-B-N. Also, the self-diffusion constant of nitrogen in Si-B-N is much decreased compared with that in amorphous Si₃N₄. This suggests that boron is important in decreasing the mobility of atoms in amorphous Si-B-N, which may explain the improved thermal stability of amorphous Si-B-N relative to amorphous Si₃N₄ observed experimentally.     

High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Simulation of Cold Compaction Densification Behavior of Silicon Nitride Ceramic Powder

The cold-compaction densification behavior of silicon nitride (Si₃N₄) ceramic powder was analyzed using two models: the Shima model and the Cam-Clay model. Triaxial-compression experimental data were used to evaluate these two models. Shima models that used Si₃N₄ matrix material with different yield stresses were discussed. It is clear that the Cam-Clay model can effectively simulate the cold-compaction densification behavior of Si₃N₄ ceramic powder. The Shima model that used a very high yield stress for the Si₃N₄ matrix material slightly overestimated the experimental data, and the Shima model that used the actual yield stress for Si₃N₄ matrix material largely overestimated that data.     

Dispersion Methods of Yttria in Silicon Nitride by Comminution

Sintering additives were incorporated into Si₃N₄ by attrition and ball milling using both Si₃N₄ and Al₂O₃ media. Dispersion of Y₂O₃ was observed by backscattered electron imaging. Attrition milling for only 15 min using an Si₃N₄ medium, was equivalent to 24 h of ball milling. Minimal contamination by the Si₃N₄ was encountered. [Key words: silicon nitride, yttria, comminution, sintering, dispersion.     

Post-Hot-Pressing and High-Temperature Bending Strength of Reaction-Bonded Silicon Nitride-Molybdenum Disilicide and Silicon Nitride-Tungsten Silicide Composites

A hot-pressing technique was used for the further densification of reaction-bonded silicon nitride-molybdenum disilicide and silicon nitride-tungsten silicide (Si₃N₄-MoSi₂ and Si₃N₄-WSi₂, respectively) compacts that were prepared via a presintering step and a nitriding process from silicon-molybdenum or silicon-tungsten powders. After hot pressing was performed at 1650°C (25 MPa for 1 h), most of the alpha-Si₃N₄ that formed during the reaction-bonding process was transformed to β-Si₃N₄ and, moreover, a very small amount of Mo₅Si₃ (W₅Si₃) was formed in addition to MoSi₂ (WSi₂). Three- and four-point bend tests were performed at room temperature (25°C), 1000°C, 1200°C, and 1400°C. The bend strength of the Si₃N₄-WSi₂ composite increased slightly from room temperature up to 1000°C, whereas the Si₃N₄-MoSi₂ composite showed a more-pronounced increase up to 1200°C. Microstructural analysis was performed on the fracture surfaces of both composites that were tested at different temperatures.     

Amorphous Silicoboron Carbonitride Ceramic with Very High Viscosity at Temperatures above 1500°C

Recently, the viscosity of a predominantly amorphous silicon carbonitride (Si_1.7C_1.0±0.1N_1.5) alloy with an apparent glass-transition temperature ( T _g) of 1400°–1500°C was studied. In this study, the creep behavior of silicoboron carbonitride (Si₂B_1.0C_3.4N_2.3), which seems to have a T _g value of >1700°C, was examined. Both materials exhibited a three-stage creep behavior. In stage I, the creep rate declined, because of densification. In stage II, the strain rate approaches a steady state. In stage III, it resumes a declining strain rate, which ultimately decreased below the measurement limit of the system. At 1550°C in stage II, the viscosity of silicoboron carbonitride was six orders of magnitude higher than that of fused silica. Among the Si-C-N ceramics, only chemical-vapor-deposited and reaction-bonded silicon carbides seem to have greater creep resistance than the silicoboron carbonitrides at temperatures >1550°C.     

The Role of Cerium Orthosilicate in the Densification of Si3N4

The existence of compounds between Si₃N₄-CeO₂ and Si₃N₄-Ce₂O₃ was investigated for firing temperatures of 1600° to 1700°C. The two new monoclinic compounds found were Ce₂O₃·2Si₃N₄ with lattice parameters a = 16.288, b = 4.848, and c =7.853 Å and β=91.54° and Ce₄Si₂O₇N₂ with lattice parameters a = 10.360, b = 10.865, and c =3.974 Å and β=90.33°. Cerium orthosilicate (Ce 4.67 (SiO₄)₃O) is present during firing as a glassy intermediate phase which promotes sintering and densification and then reacts with silicon nitride to form cerium silicon oxynitrde (CeSiO₂N).     

Mechanical Properties of Joined Silicon Nitride

A technique is described to join Si₃N₄ ceramics using oxide glasses. The technique involves a glazing step, followed by a pressureless reaction treatment of 30 to 60 min at 1575° to 1650°C. Reactions between the glasses and Si3N4 are reported. Important events are dissolution of Si₃N₄ and the growth of Si₂N₂O crystals into the joint. The strength of joined bars depends on joint thickness. Two strength regimes are identified, and two corresponding fracture mechanisms are described. A maximum strength of ∼460 MPa is achieved for a joint thickness of ∼30 μm.     

Stability of Si3N4 and Liquid Phase(s) During Sintering

Advanced sintering techniques for consolidation of Si₃N₄ powders in the presence of an oxygen-rich liquid phase(s) require high temperatures and usually high nitrogen pressures. A stability diagram is constructed for Si₃N₄ as a function of the partial pressures of nitrogen (P_N2) and silicon (P_Si). High P_N2 (20 to 100 atm) increases the stability of Si₃N₄ and the oxygen-rich liquid phase by reducing the P_Si and P_Si0, respectively. The region of high sinterability is outlined for submicrometer Si₃N₄ powders containing 7 wt% BeSiN₂ and 7 wt% SiO₂ as densification aids .