Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Thermal Conductivity of β-Si3N4: II, Effect of Lattice Oxygen

Dense β-Si₃N₄ with various Y₂O₃/SiO₂ additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y₂O₃/SiO₂ ratio increased. The oxygen contents in the β-Si₃N₄ crystal lattice of these samples were determined using hot-gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain-boundary phase, lattice oxygen content, and thermal conductivity of β-Si₃N₄ that was sintered at various Y₂O₃/SiO₂ additive ratios has been clarified.     

Mechanical Properties of β-Si3N4-Whisker/Si3N4-Matrix Composites

Composites containing 30 vol%β-Si₃N₄ whiskers in a Si₃N₄ matrix were fabricated by hot-pressing. The composites exhibited fracture toughness values between 7.6 and 8.6 MPa · m^1/2, compared to 4.0 MPa · m^1/2 for unreinforced polycrystalline Si₃N₄. The improvements in fracture toughness were attributed to crack wake effects, i.e., whisker bridging and pullout mechanisms.     

Separate Growth of α- and β-Si3N4 Whiskers on or near a Carbon Substrate by Carbothermal Reduction

Whiskers of α- and β-Si₃N₄ were grown on or near a carbon black substrate, respectively, 10 mm downstream from a mixed starting powder of low-grade silica and carbon, in flowing nitrogen gas at 1400°C. The parameters (flowing nitrogen gas rate, growth time, grade of silica, and type of carbon) that promoted growth of the whiskers were examined in view of increasing the whisker yield. The shapes and sizes of both types of whiskers were observed by scanning electron microscopy (SEM). The separate growth of the whiskers is discussed here, based on X-ray diffraction analysis and SEM observation with energy-dispersive X-ray analysis.     

Phase Relationships in the Si3N4–SiO2–Lu2O3 System

Phase relationships in the Si₃N₄–SiO₂–Lu₂O₃ system were investigated at 1850°C in 1 MPa N₂. Only J-phase, Lu₄Si₂O₇N₂ (monoclinic, space group P 2₁/ c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si₃N₄–SiO₂–Lu₂O₃ system. The Si₃N₄/Lu₂O₃ ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si₃N₄, and a new phase of Lu₃Si₅ON₉, having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si₃N₄–LuN–Lu₂O₃ system. The phase diagram suggests that Lu₄Si₂O₇N₂ is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications.     

Topotactically Oriented α-Si3N4 Cores in Sintered β-Si3N4

α-Si₃N₄ core structures within β-Si₃N₄ grains have been studied by transmission electron microscopy. The grains were dispersed in an oxynitride glass which was previously melted at 1600°C. The cores were topotactically related to the as-grown β-Si₃N₄ crystallites and are related to epitactical nucleation during heat treatment as the most probable mechanism.     

Calculation of XANES/ELNES Spectra of All Edges in Si3N4 and Si2N2O

Using a recently developed first-principles supercell method that includes the electron and core-hole interaction, the XANES/ELNES spectra of Si- L _2,3, Si- K , and N- K edges in α-Si₃N₄, β-Si₃N₄, spinel c -Si₃N₄, and Si₂N₂O were calculated and compared. The difference in total energies between the initial ground state and the final core-hole state provides the transition energy. The calculated spectra are found to be in good agreement with the experimental measurements on β-Si₃N₄ and c -Si₃N₄. The differences in the XANES/ELNES spectra for the same element in different crystals are explained in terms of differences in local bonding. The use of orbital-decomposed local density of states to explain the measured spectra is shown to be inadequate. These results reaffirm the importance of including the core-hole effect in any XANES/ELNES spectral calculation.     

Low-Temperature Synthesis of Nanocrystalline α-Si3N4 Powders by the Reaction of Mg2Si with NH4Cl

Nanocrystalline α-Si₃N₄ powders have been prepared with a yield of 93% by the reaction of Mg₂Si with NH₄Cl in the temperature range of 450° to 600°C in an autoclave. X-ray diffraction patterns of the products can be indexed as the α-Si₃N₄ with the lattice constants a = 7.770 and c = 5.627 Å. X-ray photoelectron spectroscopy analysis indicates that the composition of the α-Si₃N₄ samples has a Si:N ratio of 0.756. Transmission electron microscopy images show that the α-Si₃N₄ crystallites prepared at 450°, 500°, and 550°C are particles of about 20, 40, and 70 nm in average, respectively.     

Slip Casting of SiC-Whisker-Reinforced Si3N4

Si₃N₄ composite materials containing up to 20 vol% SiC whiskers were slip cast and pressureless sintered at 1820°C and 0.13 MPa of N₂. Viscosimetry showed no influence of whisker loading on the rheology of the highly concentrated aqueous slips up to 15 vol% whiskers. During casting the whiskers were preferentially aligned parallel to the mold surfaces. Depending on the whisker loading, green densities of 0.64 to 0.69 fractional density could be achieved. Strong anisotropic shrinkage occurred during sintering with a maximum linear shrinkage of 21% perpendicular but only 7% parallel to the whisker plane. With increasing whisker content from 0 to 20 vol% sintered densities decreased from 0.98 to 0.88, respectively.     

Combustion Synthesis of Si3N4–SiC Composite Powders

Fine Si₃N₄-SiC composite powders were synthesized in various SiC compositions to 46 vol% by nitriding combustion of silicon and carbon. The powders were composed of α-Si₃N₄, β-Si₃N₄, and β-SiC. The reaction analysis suggested that the SiC formation is assisted by the high reaction heat of Si nitridation. The sintered bodies consisted of uniformly dispersed grains of β-Si₃N₄, β-SiC, and a few Si₂N₂O.     

Synthesis of β-Si3N4 by Chemical Vapor Deposition

Beta-type CVD-Si₃N₄ plates (up to 1.1 mm thick) have been prepared by adding TiCl₄ vapor to the system SiCl₄-NH₃-H₂ at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si₃N₄ was obtained without TiCl₄ vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si₃N₄ matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si₃N₄ were examined.     

Quantitative Microscopy of β-Si3N4 Ceramics

The three-dimensional grain size distribution in an experimental β-Si₃N₄ material has been determined using the hexagonal prism as a model of β-Si₃N₄ grain shape. Results from quantitative microscopy of polished and etched sections were compared with computer-generated two-dimensional stereological parameters of hexagonal prisms with different aspect ratios in order to determine an average grain shape (i.e., aspect ratio) in the microstructure. Section parameter distributions for the average grain shape were obtained from the computer simulations and used in a three-dimensional reconstruction of the microstructure. The results showed that this Si₃N₄ ceramic had the postulated fibrous microstructure and a broad grain size distribution.     

Measurement of Interfacial Shear Strength in SiC-Fiber/Si3N4 Composites

An indentation method for measuring shar strength in brittle matrix composites was applied to SiC-fiber/Si₃N₄-matrix samples. Three methods were used to manufacture the composites: reaction bonding of a Si/SiC preform, hot-pressing, and nitrogen-overpressure sintering. An indentation technique developed by Marshall for thin specimens was used to measure the shear strength of the interface and the interfacial friction stresses. This was done by inverting the sample after the initial push through and retesting the pushed fibers. SEM observations showed that the shear strength was determined by the degree of reaction between the fiber and the matrix unless the fiber was pushed out of its (well-bonded) sheath.     

Elastic Properties of Al2O3 and Si3N4 Matrix Composites with SiC Whisker Reinforcement

A study of the elastic moduli of Al₂O₃ and Si₃N₄ ceramics reinforced with 0 to 25 wt% SiC whiskers has been performed. The Young's moduli, shear moduli, and longitudinal modulus are compared with calculated predictions for aligned fiber composites by Hill and Hashin and Rosen, and for fibers randomly oriented in three dimensions by Christensen and Waal. The measured values are in excellent quantitative agreement with those derived for the random orientation of the SiC whiskers.     

Calculation of Grain-Boundary Bonding in Rare-Earth-Doped β-Si3N4

First-principles molecular orbital calculations are performed by the discrete variational Xalpha method using model clusters of rare-earth-doped β-Si₃N₄ and the interface between prismatic planes of β-Si₃N₄ and intergranular glassy films. On the basis of the total overlap population of each cluster, the rare-earth ions are implied to be stable in the grain-boundary model, while they are not stable in the bulk model. These results are consistent with experimental observations showing significant segregation of Ln³⁺ ions at the grain boundary and no solubility of Ln³⁺ into bulk β-Si₃N₄. Grain-boundary bonding is weakened with an increase of the ionic radius of the rare-earth ions, which provides a reasonable explanation for the ionic size dependence of the crack propagation behaviors as well as the growth rate of the prismatic plane in the rare-earth-doped β-Si₃N₄ during liquid-phase sintering.     

Solubility of Si3N4 in Liquid SiO2

The nitrogen solubility in the SiO₂-rich liquid in the metastable binary SiO₂-Si₃N₄ system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N₂. A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si₃N₄ and to adjust the computed phase diagram. The solubility of Si₃N₄ in fused SiO₂ is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si₃N₄ without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si₃N₄-SiO₂ interface that leads to amorphous regions of higher N content.     

Mechanochemical-Activation-Assisted Combustion Synthesis of α-Si3N4

Combustion synthesis (CS) of α-silicon nitride (Si₃N₄) powders was accomplished at a nitrogen pressure lower than 3 MPa. The combination of mechanical activation and chemical stimulation was effective in enhancing the reactivity of Si powder reactants, which was responsible for the reduction of the minimum nitrogen pressure normally required for the CS of Si₃N₄. This breakthrough indicates that nitriding combustion of silicon in pressurized nitrogen could be promoted by activating the solid reactants instead of by increasing the nitrogen pressure. The phase content of α-Si₃N₄ in the as-synthesized product is over 90 wt%. Scanning electronic microscopy observation showed that the combustion-synthesized Si₃N₄ powders are submicron-sized particles with spherical morphologies.     

Microstructure and Mechanical Properties of Sinter–Post-HIPed Si3N4–SiC Composites

The microstructural evolution and mechanical properties of Si₃N₄–SiC composites obtained by the sinter–post-HIP process were investigated. SiC addition prohibited β-Si₃N₄ grain growth; however, the grain growth followed the empirical growth law, with exponents of 3 and 5 for the c - and the a -axis directions, respectively. Mechanical properties were strongly influenced by SiC addition and sintering conditions. Short-crack propagation behavior was measured and analyzed by the indentation-strength in-bending (ISB) method. The present composites had high short-crack toughness, compared with the values for monolithic Si₃N₄. The enhanced short-crack toughness was attributed to crack-tip bridging by the SiC particles.