固态反应法制备CaCu3-xMgxTi4O12陶瓷的介电性能研究

利用固态反应法制备了CaCu3-xMgxTi4O12(x=0,0.2,0.4,0.6,0.8,1.0)陶瓷,并分析探讨了MgO添加量对其介电性能的影响.研究结果表明,添加MgO后陶瓷晶粒有变小的现象,且MgO的添加摩尔比为0.6时其介电常数最佳,但介电常数随频率增加下降也较快;MgO添的加摩尔比为0.2和0.4时虽然介电常数增加较少,但随频率变化幅度却较小.在频率＜1 000 Hz时添加MgO会使陶瓷使的介电损耗大幅上升,这表明添加MgO有降低电阻的效果.     

CaCu3-xMnxTi4O12陶瓷的介电性能研究

本文利用固态反应法制备了CaCu3-xMnxTi4O12(x=0,0.2,0.4,0.6,0.8,1.0)陶瓷,并分析探讨了MnO添加量对其介电性能的影响。研究结果表明,MnO的添加有助于CaCu3Ti4O12相生成,且在高MnO添加的情况下所得陶瓷晶粒尺寸较小。MnO的添加对CaCu3Ti4O12的介电性能有非常不好的影响,少量的添加就会导致其介电常数由10000多降至只有数百。在1000Hz前MnO的添加会使陶瓷的介电损耗大幅上升,这表明MnO添加有降低电阻的效果。     

CaCu3Ti4O12多孔陶瓷的介电性能

采用固相烧结法在较低温度(＜1000℃)制备了CaCu3 Ti4 O12 (CCTO)多孔陶瓷.研究了淀粉对CCTO陶瓷的气孔率、显微结构、介电性能的影响.随淀粉含量的增加,CCTO陶瓷的气孔率从32.4％大幅度上升到淀粉含量为5％和10％时的41.3％和48.6％;阻抗明显增大,介电常数和介电损耗明显降低.通过这些结构和性能的变化,分析讨论了CCTO的巨介电机理.     

Ca1-xMgxCu3Ti4O12材料的微观结构和电性能研究

采用传统电子陶瓷制备工艺制备MgO掺杂Ca1-xMgxCu3Ti4O12(x=0、0.2、0.5)陶瓷,用XRD和SEM对陶瓷样品的物相结构和微观形貌进行分析,并研究了MgO对其介电性能和非线性性能的影响.结果表明MgO不仅能促进CaCu3Ti4O12陶瓷晶粒的生长,有效降低烧结温度,而且能大幅度提高材料的压敏性能和击...     

Li2Zn3(1-x)Ca3xTi4O12微波陶瓷介电性能研究

本文以Li2CO3,ZnO,CaCO3,TiO2为原料,采用固相反应法制备了Li2Zn3(1-x)Ca3xTi4O12(x=0,0.05,0.1,0.15)陶瓷,并研究了CaTiO3固溶量对其显微结构和微波介电性能的影响.结果表明:Li2Zn3Ti4O12晶相中固溶CaTiO3相,晶胞参数会增大;少量CaTiO3相固溶于Li2Zn3Ti4O12陶瓷后,提高了Li2Zn3Ti4012陶瓷的烧结温度及其介电常数,但降低了其品质因素,可增大其温频系数.在1100℃/2 h烧结条件下,Li2Zn2.7Ca0.3Ti4O12陶瓷微波介电性能达到:εr=24,Q×f=50000 GHz,Tf=-25×10-6/℃.     

熔盐法制备Bi4Si3O12陶瓷及其介电性能研究

以Bi2O3和SiO2为原料,利用NaCl-Na2SO4熔盐系统,在850℃保温3 h制成粉体样品,使用XRD对粉体物相进行表征,确定粉体为纯的Bi4Si3O12,然后将该粉体压片烧成Bi4Si3O12陶瓷.通过SEM和阻抗分析仪对陶瓷微观形貌和介电性能进行了分析,研究烧成温度、保温时间对硅酸铋陶瓷介电性能的影响.研究...     

BiFeO3-SrBi2Nb2O9陶瓷的介电与铁电性能研究

用传统的固相反应法制备了单相层状钙钛矿结构的xBiFeO3-(1-x)SrBi2Nb2O9(x=0、0.05、0.1)的铁电陶瓷,并对其电学性能进行了研究。研究结果表明BiFeO3的掺入降低了SBN的烧结温度,陶瓷晶粒尺寸减小,致密度提高;介电性能得到了改善,居里温度和在居里点的介电常数提高;铁电性能恶化,耐压特性下降。     

前驱体制备(1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3陶瓷的微波介电性能

以ZnNb2O6为前驱体,通过固相反应合成了(1-x)CaTiO_3-xCa(Zn_(1/3)Nb_(2/3))O_3体系微波介质陶瓷。对固溶体进行了结构与性能测试,研究了体系结构与性能随组份变化规律。结果表明,由于Zn,Nb对Ti的B位取代增大了B-O八面体的倾斜角,从而导致随着Ca(Zn_(1/3)Nb_(2/3))O_3含量从0.2增加至0.8,介电常数从109减小为49,Q×f值从8340GHz增至13200GHz,频率温度稳定系数由321ppm/℃降为-18ppm/℃。在x=0.7时获得ε_1≈56,Q×f≈11500GHz,τ_f≈-5ppm/℃的最佳性能。     

Deficient or excessive CuO-TiO2 phase influence on dielectric properties of CaCu3Ti4O12 ceramics

The influence of the CuO–TiO₂ phase (CT) on dielectric properties of the CCTO ceramic was investigated. CaCu_XTi_YO₁₂ (CC_XT_YO) powders were prepared based on the coprecipitated method, where 2.70 ≤ x ≤ 3.30 and 3.25 ≤ y ≤ 4.75. XRD patterns confirmed the presence of CCTO and also the secondary phases as CuO, TiO₂, and CaTiO₃ for each sample and aided in its quantification. Scanning Electron Microscopy (SEM) shows secondary phases evolution in the grain boundaries, and its influence on size and morphology of the grains. Impedance spectroscopy measurements showed that the ceramics with lower amount of CuO and TiO₂ phases (CT/deficient ceramics) exhibited the highest ε′ values (2.1 × 10⁴ at 1 kHz for CC_2.9T_3.75O ceramic). Also, CT/deficient ceramics showed lower tanδ values (0.090 at 1 kHz for CC_2.9T_3.75O ceramic) than ceramics prepared with excessive CuO–TiO₂ phase (0.241 at 1 kHz for CC_3.1T_4.25O ceramics). The deficiency of CuO and TiO₂ phases associated with high percentage of CCTO and CaTiO₃ phases resulted in ceramics with the higher ε′ values.     

Dielectric Characteristics of UV‐Curable CaCu3Ti4O12 Composite Thick Film Capacitors on Cu Foils

Dielectric composite thick films containing a high dielectric constant CaCu₃Ti₄O₁₂ (CCTO) filler in a UV‐cured polymer matrix were investigated as flexible planar capacitors on Cu foils. Dielectric performance depended on the volume fraction and size of CCTO particles dispersed in the cured polymer matrix. As a result, the thick films containing 33.3 vol.% CCTO with an average particle size of 0.47 μm exhibited a dielectric constant of ~80 and a dielectric loss of ~0.06 at 10 kHz. The effective medium theory model incorporating a morphology fitting parameter has been proven to be most close to the experimental values.     

水热法制备钛酸铋粉体的研究

以TiCl4乙醇溶液和Bi（NO3）3·5H2O为原料．NaOH为矿化剂，其摩尔配比的关系为TiCl：Bi（NO3）3·5H2O：NaOH=0．1：0．75：1．5．用水热法合成钙钛矿结构的钛酸铋粉体。讨论了水热合成条件（前驱物和粉体处理、晶化时间、填充率）对钛酸铋粉体结构和形貌的影响。XRD、SEM分析表明，在240℃，晶化时间16h，填充比为60％的条件下，可制备平均晶粒粒径为9～12nm，团聚较轻，颗粒边界明显．球形的钛酸铋粉体。     

Mg2+和Sr2+掺杂对CaCu3Ti4O12陶瓷微观结构与介电性能的影响

采用固相反应法分别制备了Mg2+及Sr2+掺杂的Ca1-xMgxCu3Ti4O12和Ca1-xSrxCu3Ti4O12(x=0、0.1、0.2)陶瓷,利用XRD和SEM分别对陶瓷的物相结构和微观形貌进行了分析,并对其介电性能进行了测试.结果表明,Mg2+的掺杂易引起CaCu3Ti4O12(CCTO)化学计量比的偏失,同时陶瓷的致密化程度受到影响,介电常数也显著降低.而Sr2+的掺杂不仅对CCTO陶瓷物相结构影响不大,而且可以促进陶瓷晶粒的长大,并有效降低了CCTO陶瓷的烧结温度.当Sr2+掺杂量为0.2、测试频率在1 k-2.5kHz时,介电常数为104左右,介电损耗在0.05-0.1之间,介电综合性能比纯CCTO陶瓷有所提高.     

Origin of the temperature stability of dielectric constant in CaCu3Ti4O12

The temperature and dc bias stability of the dielectric constant and loss tangent of CaCu₃Ti₄O₁₂ samples sintered under different oxygen atmospheres are discussed. The results suggest that the metal-oxygen vacancy related defects not only provide the charge carriers for the conduction (defect doping) but also contribute to the huge permittivity in the way of defect dipoles repositioning under charge carrier hopping. The charge localization in a specific copper-oxygen vacancy defect complex is the reason of the huge and stable permittivity and low dielectric loss in the middle temperature range, 90 K-200 K (20 Hz), while the implementation of the large barrier layer height needs a contribution by the titanium oxygen vacancy related trap charges in the grain boundaries, which also lead to a second permittivity stable range in a higher temperature range 200 K–300 K.     

H3BO3对Li2Zn3Ti4O12微波介质陶瓷低温烧结与微波介电性能的影响

采用传统固相反应法制备了添加H3BO3助烧剂的Li2Zn3Ti4O12 (LZT)陶瓷,分别通过XRD、SEM、排水法及网络分析仪等方法研究了不同H3BO3添加量对所得陶瓷的物相、微观形貌、烧结特性与微波介电性能的影响.结果表明在LZT陶瓷中添加3wt% H3BO3可有效降低烧结温度,在900 ℃/2 h烧结条件下可以获得高致密性及优异的微波介电性:ρ=4.15 g/cm3,εr=17.916,Q×f=61200 GHz,Tf=-52.87×10-6/℃.