Preparation and characterization of PLZT thin films by sol-gel processing

The effect of acid catalysts on the sol-gel preparation of ferroelectric lead lanthanum zirconium titanate (PLZT) thin films was studied. High quality thin films were successfully produced by using suitable amounts of the drying control chemical additive formamide and also catalyst acids during the sol-gel processing followed by various annealing conditions. The dielectric constants of the PLZT (8/65/35) thin films produced in this study varied between 540 (100 kHz) for a film annealed at 600 °C for 30 mins to a maximum 870 °C (1 kHz), 700 (100 kHz) for a film annealed at 650 °C for 20 mins.     

Preparation of Er2O3 thin films by sol-gel dipping process

Er₂O₃ thin films had been prepared by a sol-gel dipping process with Er(NO₃)₃ · 6H₂O as the precursor and collodion as the viscosity-increasing agent. The annealing temperature of gel films was 600 °C and the thickness of Er₂O₃ thin films increased linearly with the number of dippings at a rate of about 40 nm per dipping. This sol-gel dipping process provided a good reproducibility of the homogeneous Er₂O₃ thin films. The spectral and crystal properties of the thin films were studied in detail and the results indicated that the color of the thin films mainly resulted from an interference effect. Moreover, the optically transparent region of Er₂O₃ thin films was determined with photoacoustic spectroscopy.     

Structural and optical properties of TiO2 thin films grown by sol-gel dip coating process

The mono and bi-layer TiO₂ thin films have been prepared by sol-gel method on glass. X-Ray diffraction, Raman spectroscopy, atomic force microscopy, spectroscopic ellipsometry and m-lines spectroscopy techniques have been used to characterize the TiO₂ films. The mono-layer film is found to be amorphous, while the bi-layer film shows the presence of anatase phase. The bi-layer film exhibits more homogeneous surface with less roughness. The thickness effect on the refractive index, extinction ceofficient, packing density and optical band gap is analysed. The waveguiding measurements of the bi-layer film exhibit single-guided TE₀ and TM₀ polarized modes from which we can measure the refractive index and the film thickness.     

Preparation and characterization of sol-gel derived copper-strontium-oxide thin films

P-type transparent conductive oxides have potential applications in photovoltaics, transparent electronics, and organic optoelectronics. In this paper, results are presented on the synthesis of Cu₂SrO₂ thin films, a p-type transparent conducting oxide by a sol-gel route. Cu(II)methoxide and Sr-metal dissolved in anhydrous isopropanol were used as precursor for the sol preparation. For potassium (K) doping, K-acetate dissolved in anhydrous isopropanol was used as the precursor. Films were spin-coated onto substrates and partially pyrolysed in air at 225°C. After partial pyrolization, a two stage annealing sequence was used to achieve the final film microstructure and composition. Although combinations of oxygen pressure, annealing time, and annealing temperature were used to obtain phase pure Cu₂SrO₂ thin films, X-ray diffraction consistently showed the presence of Cu₂O as a second phase with Cu₂SrO₂−the desired phase. Microstructural studies showed similar phase separation in the films and confirmed the microcrystalline nature. The best conductivities obtained for the undoped and 1% K-doped films were 2 × 10^− 3 and 1.2 × 10^− 2 S/cm, respectively. Both films showed a broad optical absorption edge in the visible range.     

TiO2薄膜的溶胶-凝胶法制备及其光学特性

采用溶胶-凝胶法在普通载玻片上制备了均匀透明的纳米TiO2薄膜，X射线衍射结果表明薄膜晶粒大小为23．0nm，呈锐钛矿型。通过测量薄膜的紫外可见光透射率和吸光度光谱，对其光学特性和吸收边缘进行了研究，同时计算了薄膜的光学禁带宽度。实验结果表明：随薄膜层数的减少，光吸收带边缘发生了蓝移，光学禁带宽度随之变大，此现象可用量子尺寸效应来解释。     

Li-Cu共掺杂ZnO纳米薄膜的溶胶凝胶法制备

采用溶胶-凝胶法,通过调整氯化锂和氯化铜的摩尔比在不同基片上制备了不同Li-Cu共掺杂浓度的ZnO薄膜.利用X射线衍射仪、扫描电子显微镜、透射电子显微镜、紫外可见光分光光度计和伏安特性测试等表征了薄膜的结晶状况、表面形貌及光电特性.结果表明:所得Li-Cu共掺杂ZnO薄膜为六角纤锌矿多晶结构,有CuO杂质相生成.随Li和Cu摩尔比增加,共掺杂ZnO薄膜结晶度增强,晶粒长大,样品表面不平整度增加.CuO颗粒的出现,使得共掺杂ZnO薄膜透射率降低,透光性较差.Li与Cu摩尔比为1∶1时,共掺杂ZnO薄膜的综合导电性最好.     

溶胶-凝胶V2O5薄膜的制备及其电化学特性研究

优化了以V2O5粉末、苯甲醇和异丙醇为原料制备V2O5薄膜的溶胶一凝胶技术工艺,使用XRD、FTIR、AFM、UV-VIS-NIR分光光度计和电化学分析等方法研究了薄膜的特性。实验结果表明：采用经过优化的工艺制备的V2O5溶胶为V^4 离子和V^5 离子的混合体,具有很好的稳定性和重复性;随热处理温度的升高,薄膜结构收缩,晶粒长大,V^4 离子逐渐被氧化为V^5 离子;V2O5薄膜具有良好的电化学伏安循环特性。     

Preparation and characterization of radio-frequency-sputtered Ba2Si2TiO8 thin films

Radio-frequency-sputtered barium titanium silicate (BST, Ba₂Si₂TiO₈) thin films were grown on crystalline Si (100) substrates and were characterized using wavelength-dispersive spectrometry (WDS), X-ray diffraction (XRD), optical microscopy (OM) and scanning electron microscopy (SEM), and diagonal techniques for dielectric properties. The chemical compositions of the films increasingly deviated from stoichiometry with film thickness. At the initial stage of deposition the grain configuration is dependent on the Si substrate texture. XRD analysis indicates that the BST films deposited at an optimum substrate temperature of 845 °C were strongly c-axis oriented, and that the film orientation is manipulated by substrate temperature and supersaturation. The corresponding film-growth rate in the direction normal to the film surface at 845 °C was 1.95 nm min^–1 at the initial stage, and decreased with sputtering time. The as-deposited films have a room-temperature bulk resistivity of 1.8 ×10⁷ m in the direction of thickness and an isotropic surface resistivity of 1.5×10³ m. The high-frequency relative dielectric constant, 0.05 at frequencies higher than 9 MHz, is lower than that of many typical piezoelectric materials. The high-frequency impedance character is typical of piezoelectric materials, giving a minimum impedance frequency of 9.0 MHz and a serial resonant frequency at about 9.5 MHz.     

Photoelectric properties of TiO2-ZrO2 thin films prepared by sol-gel method

Acidic sols of TiO2, ZrO2 and Ti-Zr mixed oxide precursors were prepared. The sols were then smeared on quartz substrate and annealed at 650 degrees C for 2 hour to form polycrystalline oxide films. XRD, SEM, UV-visible absorption spectra and XPS were carried out to characterize the films. It was found that the crystalline phase of pure titania is an anatase and pure zirconia is a tetragonal. The binary oxides show the anatase phase at the molar ratio of Ti:Zr = 2.73:1, which means that solid solution was formed. The absorption edge of the TiO2-ZrO2 binary oxides showed obvious blue shift as the Zr ratio increased. The results obtained indicate that the band gap of the binary oxides could be adjusted from 3.2 eV (TiO2) to 7.8 eV (ZrO2) by varying the molar ratio of Ti and Zr. Au interdigitated electrodes were produced by planar technology and MSM (metal-semiconductor-metal) structure UV detector based on TiO2-ZrO2 binary oxides was fabricated. Obvious photoelectric response was observed.     

Synthesis and characterization of nanocrystalline CdZnO thin films prepared by sol-gel dip-coating process

Nanocrystalline Cd_xZn_1 − xO thin films with different Cd volume ratios in solution (x = 0, 0.25, 0.50, 0.75 and 1) have been deposited on glass substrate by sol-gel dip-coating method. The as-deposited films were subjected to drying and annealing temperatures of 275 °C and 450 °C in air, respectively. The prepared films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, UV-vis spectroscopy and dc-electrical measurements. The results show that the samples are polycrystalline and the crystallinity of the films enhanced with x. The average grain size is in the range of 20-53 nm. The atomic percent of Cd:Zn was found to be 9.50:1.04, 6.20:3.77 and 4.42:6.61 for x = 0.75, 0.50 and 0.25, respectively. It was observed that the transmittance and the band gap decreased as x increased. All the films exhibit n-type electrical conductivity. The resistivity (ρ) and mobility (μ) are in the range of 3.3 × 10² − 3.4 × 10^− 3 Ω cm, and 1.5 − 45 cm² V^− 1 s^− 1 respectively. The electron density lies between 1.26 × 10¹⁶ and 0.2 × 10²⁰ cm^− 3.     

Preparation and characterization of TiO2-SiO2 glass ceramics via the sol-gel process by adding organic additives

This paper deals with the preparation of TiO₂-SiO₂ ceramics by using formamide, glycerol, or oxalic acid as drying control chemical additives (DCCAs) in order to improve the physical properties of the products, control the rates of hydrolysis and polycondensation, as well as the particle size homogeneity and porosity distribution. It was found that when using DCCAs, the gelation time was longer than without any additives. In acidic solution, the hydrolysis reaction is rapid, and the gelation tends to be slow; in an alkaline medium, the polycondensation of Si-OH and Ti-OH groups takes place much faster. The higher rate of nucleophilic substitution associated with the DCCAs leads to larger particles of the bulk ceramics.     

溶胶-凝胶法制备氧化铝绝缘薄膜及其电性能研究

以乙二醇乙醚为溶剂,异丙醇铝为前驱物,乙酰丙酮为螯合剂,采用溶胶-凝胶法和旋转涂覆工艺,在不同衬底上制备了氧化铝薄膜.通过X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)和金相显微镜等手段对薄膜的微观结构和表面形貌进行了表征。结果表明,溶胶-凝胶法制得的薄膜为无定形结构,表面均匀、致密、无裂纹。通过对薄膜电流密度与电场和时间(J-E和J-t)曲线的测量,对薄膜的电学性能进行了研究。薄膜击穿场强约为2.0～3.0MV/cm,在电场强度为0.5MV/cm时,漏电流密度约为9.0×10-6 A/cm2。     

Morphological characterization of TiO2 thin films

Films prepared by reactive magnetron sputtering always present some structural and morphological heterogeneities.In this work, optical parameters, n(λ), k(λ) and E₀, of TiO₂ thin films were obtained, using only optical transmittance measurements. Films were described according to Abèles's model. Using a mono-oscillator type dispersion curve for the refractive index and a Lorentzian type curve for the absorption coefficient, we were able to demonstrate that the films were optically equivalent to a porous layer, with some dispersion in film thickness.The detailed analysis of the experimental transmittance data, fitted between 330 nm to 2200 nm, also enabled us to correlate the effective refractive index of each film with its deposition conditions.     

TiO2与聚合物复合薄膜的离子自组装制备及表征

在常温下,以钛酸丁酯[(C4H9O)4Ti]和聚四苯乙烯磺酸钠(PSS)作为前驱物在普通载玻片上用离子自组装法制备了TiO2纳米粒子/PSS复合薄膜,复合薄膜的透过率随镀膜次数或薄膜厚度的增加而呈现周期性变化。透射电镜(TEM)测试结果表明,TiO2呈板钛矿晶体结构,薄膜连续而均匀,TiO2的平均粒径是3.6nm。光电子能谱仪(XPS)测试结果显示,薄膜中含有Ti、O、C元素,载玻片表面完全被TiO2纳米复合薄膜所覆盖。     

Preparation and characterization of sol-gel Li and Al codoped ZnO thin films

Li and Al codoped ZnO (LAZO) thin films have been prepared by a sol-gel method and their structural and optical properties have been investigated. The prepared LAZO films had an average transmittance of over 85% in the visible range. The UV absorption edge was red-shifted with Li-doping, whereas it was blue-shifted with Al-doping. A broad yellowish-white emission was observed from the LAZO films annealed above 600 °C. The visible emission was enhanced with increasing annealing temperature and dopant concentration.     

Highly oriented (Pb, La)TiO3 thin films prepared by sol-gel process

Highly oriented lead lanthanum titanate (PLT) thin films on MgO (100) and c-plane sapphire single-crystal substrates have been prepared using the sol-gel process. The orientation and the mechanism of the highly preferred oriented PLT films derived sol-gel process have been investigated. The sol-gel PLT films fabricated on MgO (100) and c-plane sapphire substrates grow preferentially with (100) and (111) crystallographic orientations respectively, regardless of the film thickness and La content. In addition, it is confirmed that the tetragonality of the PLT perovskite structure decreases with an increase of La content. The a-axis orientation of the sol-gel PLT film on MgO (100) substrate is controlled only by formation of the intrinsic tensile stress during the crystallization of the film.     

溶胶-凝胶法制备TiO_2薄膜及其光学性能的研究

采用溶胶-凝胶法在K9玻璃上制备了均匀、透明、裂纹较少的纳米TiO2薄膜,以无水乙醇用量、涂层数、煅烧温度为影响因素,设计L9(3)4正交试验,以薄膜的透明度、微观致密程度作为评价标准,讨论了无水乙醇用量、涂层数和煅烧温度对制备TiO2薄膜光学性能的影响。用反射式椭圆偏振光谱仪测试最佳制备工艺下制得的TiO2薄膜的椭偏参数,并用Cauchy模型对椭偏参数进行数据拟合。结果表明,薄膜最优制备工艺参数为无水乙醇用量30 m L、涂层数为2层、煅烧温度为550℃;Cauchy模型能较好的描述溶胶-凝胶薄膜在300~700 nm波段的光学性能;薄膜的折射率和消光系数都有随波长增大而减小的趋势且制备的薄膜具有随着膜层数的增加,折射率增加,而最大峰值透光率、孔隙率减小的规律。