低应力PECVD氮化硅薄膜的制备

研究了等离子增强化学气相淀积(PECVD)工艺中射频条件(功率和频率)对氮化硅薄膜应力的影响.对于不同射频条件下薄膜的测试结果表明:低频(LF)时氮化硅薄膜处于压应力,高频(HF)时处于张应力,且相同功率时低频的沉积速率和应力分别为高频时的两倍左右;在此基础上采用不同高低频时间比的混频工艺实现了对氮化硅薄膜应力的调控,且在高低频时间比为5:1时获得了应力仅为10 MVa的极低应力氮化硅薄膜.     

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.     

Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions

The paper presents a systematic investigation of the dielectric charging and discharging process in silicon nitride thin films for RF-MEMS capacitive switches. The SiN films were deposited with high frequency (HF) and low frequency (LF) PECVD method and with different thicknesses. Metal–Insulator–Metal capacitors have been chosen as test structures while the Charge/Discharge Current Transient method has been used to monitor the current transients. The investigation reveals that in LF material the stored charge increases with the film thickness while in HF one it is not affected by the film thickness. The dependence of stored charge on electric field intensity was found to follow a Poole–Frenkel like law. Finally, both the relaxation time and the stored charge were found to increase with the electric field intensity.     

原位SiN_x掩膜生长GaN材料的应力及其对光学性质的影响(英文)

研究了以金属有机化学气相沉积方法生长在SiNx掩模层的GaN的应力状态,以及应力对光学性质的影响。通过微区拉曼光谱对应力进行了表征,结果显示,随着SiNx掩模淀积时间的增加,其上生长的GaN应力会相应地,释放。相应地,低温光致发光测试显示,施主束缚激子发光峰峰位出现明显的红移。我们认为,随着SiNx掩模淀积时间的增加,掩模覆盖度的增大,促进了侧向外延的生长,释放了压应力,进而影响了材料的光学性质。     

Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56 MHz/2 MHz dual-frequency capacitively coupled plasma

This work investigates the etching characteristics of SiCOH low dielectric constant (low-k) films in the CHF₃ 13.56 MHz/2 MHz dual-frequency capacitively couple plasma (CCP). The effect of low-frequency (LF) power on etching behavior is analyzed. The results show that the increase of LF power can leads to a transition of etching behavior from films deposition to etching. By Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis on the etched SiCOH films and optical emission spectroscopy (OES) analysis on the plasma radicals, the transition behavior is found to relate to the suppression of C:F deposition due to the energetic ions sputtering and the increase of F concentration at higher LF power.     

脉冲激光沉积类金刚石膜技术

脉冲激光沉积(PLD)技术制备类金刚石(DLC)薄膜存在着金刚石相含量较低、石墨颗粒多、薄膜与衬底附着力差、膜内应力大等技术难题,为此,研究人员研究出了多种技术措施,如通过引入背景气体、超快激光、偏压、磁场以及加热等措施提高了薄膜金刚石相含量;采用金刚石或丙酮靶材、减小单脉冲能量等措施减少了石墨颗粒;采用间歇沉积、真空退火、超快激光等措施减少了膜内应力;合理没计过渡层改善了膜与衬底间的附着力等.这些技术有力地推动了脉冲激光沉积技术的发展.     

RF等离子辅助热丝CVD法制备大面积β-SiC薄膜

采用RF辅助加热CVD方法,在76mm硅衬底上生长了β-SiC薄膜。设备为电容耦合式RF(13.56MHz)等离子体装置,反应气体为甲烷(CH4);通过控制反应系统内碳原子成核生长的条件,实现了大面积β-SiC薄膜的生长。对样品进行了XRD、AFM检查;退火后整个样片膜厚均匀、一致性好、应力低、与衬底的粘附性好。     

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

In the present work, we report silicon nitride films deposited by a radio- frequency (RF) sputtering process at relatively low temperatures (<260°C) for microelectromechanical system (MEMS) applications. The films were prepared by RF diode sputtering using a 3-inch-diameter Si₃N₄ target in an argon ambient at 5 mTorr to 20 mTorr pressure and an RF power of 100 W to 300 W. The influence of the film deposition parameters, such as RF power and sputtering pressure, on deposition rate, Si-N bonding, surface roughness, etch rate, and stress in the films was investigated. The films were deposited on single/double-side polished silicon wafers and transparent fused-quartz substrates. To explore the RF-sputtered silicon nitride film as a structural material in MEMS, microcantilever beams of silicon nitride were fabricated by bulk, surface, and surface-bulk micromachining technology. An RF-sputtered phosphosilicate glass film was used as a sacrificial layer with RF-sputtered silicon nitride. Other applications of sputtered silicon nitride films, such as in the local oxidation of silicon (LOCOS) process, were also investigated.     

脉冲电泳沉积制备电致变色WO3薄膜

采用正交设计法优化了脉冲电泳沉积制备WO3薄膜的工艺参数,并通过分析薄膜的微观结构、透射光谱和循环伏安曲线等研究了最佳工艺条件下制备的WO3薄膜的电致变色性能.结果表明,脉冲电泳沉积制备WO3薄膜的最佳工艺参数为平均电流密度0.2×10-3A/cm2,沉积时间6 min,占空比75%,脉冲周期10 ms.最佳工艺条件下...     

Optimization of nitride films for linear pre-metal dielectric process

With applications in current semiconductor manufacturing, the characteristics of nitride films were investigated for the optimization of pre-metal dielectric (PMD) linear nitride process. For the purpose of this study, the deposit condition of nitride films was divided into four areas such as protected overcoat (PO) nitride process, baseline process, low hydrogen process, and low hydrogen process with high stress, respectively. The correlation between boro-phospho-silicate-glass (BPSG) depositions and their densification was also examined and Fourier transform infrared spectroscopy (FTIR) area method was used to analyze the change of Si-H and Si-NH-Si bonding density. In addition, the generation of cracks on the wafer edge was evaluated after BPSG densification. The stress changes of nitride film as a function of radio frequency (RF) power variation were used to determine the quality of the deposited films. Resultantly, the low hydrogen process was recommended as an optimized condition for linear PMD nitride film.     

Multivariate Decomposition of Arterial Blood Pressure Variability for the Assessment of Arterial Control of Circulation

In order to analyze the information carried by arterial blood pressure (ABP) variability, a multivariate parametric model of interactions involving systolic ABP (SAP), diastolic ABP (DAP), pulse pressure (PP), heart period (HP), and respiration is proposed. The model defines SAP as sum of the preceding DAP and PP values; DAP model accounts for arterial baroreflex, diastolic runoff; PP reflects changes in stroke volume related to respiration and HP, afterload; equation residuals reveal other vascular and cardiac output modulations. The model was applied to data from nine young volunteers (aged 29plusmn6 years) during supine cycling at 10%, 20%, and 30% of their maximum effort. Significant basal values and changes across the epochs of the experiment were found in all hemodynamic parameters describing fast, beat-by-beat responses; in SAP and PP total power, DAP low- and high-frequency power (LF, HF), PP very low frequency (VLF), and LF and HF power. A primary role of vascular control through DAP and PP was emphasized by the considered feedbacks and the model residuals. The model proved to be able to assess beat-by-beat cardiovascular interactions and offer a comprehensive view of arterial tree control.     

Low-frequency noise characterization of n- and p-MOSFET's withultrathin oxynitride gate films

MOSFET's with ultrathin (5 to 8.5 nm) silicon oxynitride gate film prepared by low-pressure rapid thermal chemical vapor deposition (RTCVD) using SiH₄, N₂O and NH₃ gases, are studied by low-frequency noise measurements (1 Hz up to 5 kHz). The analysis takes into account the correlated mobility fluctuations induced by those of the interfacial oxide charge. The nitrogen concentration, determined from SIMS analysis, varies from 0 to 11% atomic percentage. A comparison of the electrical properties between thermal and silicon oxynitride films is presented. The increasing LF noise signal with nitrogen atomic percentage indicates the presence of a higher density of slow interface traps with increasing nitrogen incorporation. Besides, a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after nitridation     

Effects of record length selection on the accuracy of spectralestimates of heart rate variability: a simulation study

To evaluate the effects of record length selection on the accuracy of spectral estimates of heart rate variability (HRV), a simulation study was carried out using a set of 58 signals obtained by autoregressive (AR) fitting a representative sample of real HRV signals. Four record lengths of 180, 300, 420, and 540 s were considered. Spectral estimation was performed by both the Blackman-Tukey (B-T) and AR methods. Accuracy was assessed for: (1) point spectral estimates, by computing the normalized averaged bias (NAB) and variance (NAV); and (2) the most commonly used spectral parameters [total power (TP) and the powers in the bands: very low frequency (VLF) (0÷0.04 Hz), low frequency (LF) (0.04÷0.15 Hz), and high frequency (HF) (0.15÷0.45 Hz)], by computing the normalized bias (NB) and variance (NV). The results are: whatever the record length considered, the 90th percentiles (90P) of the NAB were <10%, whereas those of the NB were <9% for TP, LF, and HF powers, and <14% for the VLF power, in both methods. The NAV was proportional to the reciprocal of record length, showing high 90P values for the shortest record length (26.4% for B-T and 44.2% for AR). The NV showed the same trend but 90P values were much lower (<8% for TP, LF, and HF powers and <19% for VLF power, in both methods). In the final part of the paper a procedure for the computation of approximate upper bounds of the relative absolute error of spectral measures at each record length, based on the knowledge of the NE and NV, is presented     

Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique

This paper addresses the influences of sputtering power and deposition pressure on the surface morphology and structural behavior of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon grown at room temperature. Results from our experiments show that the deposition rate of the Cu film increases proportionally with the sputtering power and decreases with deposition pressure. From the atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, high sputtering power enhances the microstructure of the Cu film through the surface diffusion mechanism of the adatom. The poor microstructure as a result of low sputtering power deposition was manifested with the smaller value of Cu film root mean square (RMS) roughness obtained. The deposition pressure has the contrary influence on structural properties of Cu film in which high deposition pressure favors the formation of voided boundaries film structure with degraded film crystallinity due to the shadowing effect, which varies with different deposition pressures.     

PECVD法制备纳米晶硅薄膜的研究进展

简要介绍了纳米晶硅薄膜的微结构表征方法,重点讨论了PECVD制备方法中工艺参数对薄膜结构的影响,并探讨了氢在薄膜形成和生长中的作用。通过优化氢稀释率、衬底温度、反应气压、激励功率和激发频率等工艺参数可提高纳米晶硅薄膜的晶化率并改善薄膜质量。结合喇曼光谱、X射线衍射谱、傅里叶红外光谱和高分辨透射电镜等表征方法可深入研究薄膜形成机理,对进一步探索薄膜光电特性有重要意义。分析了等离子体化学气相沉积(PECVD)制备方法中各工艺参数对薄膜质量和沉积速率的影响,指出其存在的问题,并探寻了今后的研究方向。     

磁控溅射法制备具有同质缓冲层的PST薄膜

采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3(PST)薄膜为缓冲层(同质缓冲层)的PST双层薄膜。通过X-射线衍射、扫描电镜、阻抗分析仪和铁电分析仪对薄膜相结构、表面形貌、介电损耗和铁电性能进行了测试分析。结果表明,以低功率溅射得到的PST薄膜作为同质缓冲层的双层薄膜可减少薄膜的缺陷,从而有效降低介电损耗。     

利用激光——真空弧技术制备Al65Cu20Fe15准晶态合金薄膜

准晶态合金具有许多晶态合金无法比拟的特性,如低电导率、低导热率和负温度系数、抗磁性、高硬度、低摩擦系数和耐蚀性等。准晶合金做为涂层和薄膜材料具有重要的潜在应用价值。准晶合金薄膜由于对其成份的特殊要求,一般方法难以制备。本文首先介绍了激光-真空弧薄膜沉积技术和自行研制的相关设备。利用该设备,在Si<111>基体表面制备了Al65Cu20Fe15准晶态合金薄膜。研究了所制备薄膜的厚度、颗粒度等与薄膜制备过程中激光脉冲频率、引弧电压和靶材—衬底间距等工作参数之间的对应关系。结果表明,通过调整工艺参数,可以有效的改善成膜质量。薄膜沉积所用的靶材是电磁感应熔炼制备的Al65Cu20Fe15准晶整体材料。沉积在衬底上的薄膜是与准晶合金成分接近的非晶态薄膜。为了得到准晶态合金膜需对其进行退火处理,本文探讨了退火温度、与膜成分、组织结构的变化趋势之间的关系。     

Interface characteristics of selective tungsten on silicon using anew pretreatment technology for ULSI application

The characteristics of selective tungsten film on silicon strongly depend on the surface properties of the underlying substrate. In this work, a new pretreatment process prior to selective tungsten film deposition has been developed. A CF₄/O₂ mixed plasma modification procedure and a subsequent O₂ plasma ashing step combine to achieve efficient surface precleaning. The damage and contamination induced by reactive ion etching (RIE) are thus eliminated. Concurrently, a subsequent anhydrous HF cleaning was used to remove the native oxide on silicon as well as to obtain a fluorine-passivated silicon surface which can avoid reoxidation during the transport of wafers. This new pretreatment technology produces tungsten films that retain superior physical properties within the aspects of deposition rate, film morphology, and selectivity. Also, excellent interface characteristics with low silicon consumption, low contact resistance, low contact leakage current, and fewer impurities of fluorine, oxygen, and carbon within the interfacial region are obtained     

Modeling of cardiovascular variability using a differential delayequation

The influence of time delay in the baroreflex control of the heart activity is analyzed by using a simple mathematical model of the short-term pressure regulation. The mean arterial pressure in a Windkessel model is controlled by a nonlinear feedback driving a nonpulsatile model of the cardiac pump in accordance with the steady-state characteristics of the arterial baroreceptor reflex. A pure time delay is placed in the feedback branch to simulate the latent period of the baroreceptor regulation. Because of system nonlinearity model dynamics is found to be highly sensitive to time delay and changes of this parameter within a physiological range cause the model to exhibit different patterns of behavior. For low values of time delay (shorter than 0.5 s) the model remains in a steady state. When time delay is longer than 0.5 s, a Hopf bifurcation is crossed and spontaneous oscillations occur with frequencies in the high-frequency (HF) band. Further increases of time delay above 1.2 s cause the oscillations to become more complex, and following the typical Feigenbaum cascade, the system becomes chaotic. In this condition heart rate, pressure, and how show evident variability. The heart rate power spectrum exhibits a peak whose frequency moves from the HF to LF band depending on whether simulated time delay is as short as the vagal-mediated control or long as the sympathetic one     

应用高频激励源制备低应力氮化硅薄膜研究

研究了在等离子体增强化学气相沉积(PECVD)法制备氮化硅薄膜时,射频功率和腔室压力对氮化硅薄膜应力的影响以及应力与沉积速率的关系。通常认为高频下制备得到的氮化硅膜呈现张应力,但是通过实验,表明即使应用高频(13.56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。并使用角度可变光谱型椭偏仪观察了薄膜的厚度和低应力氮化硅膜的m app ing图,利用傅立叶变换红外光谱仪(FT IR)对不同应力状态下的氮化硅膜的化学键结构进行了分析。