扩展互作用放大器技术进入成熟阶段

引言近几年来,人们对毫米波雷达系统的兴趣大有所增,因为这类系统可以提供既比微波系统、又比红外系统更为优越的性能。在一定的天线孔径尺寸下,毫米波系统的分辨率比微波系统更好。在恶劣的气候条件下,毫米波系统的作用距离比红外系统要大得多。阻碍毫米波系统扩大应用的一个障碍是缺乏组装紧凑、结构轻巧、并能提供相参工作,频率捷变和短脉冲波长的高功率发射机。若能在毫米波频率上达到象 x 波段通常能达到的发射功率和波形的灵活性就好了。虽然这一目标尚未达到,但在 EIO 管技术方面已作出一些新成就,已使95千兆赫下产生相参,峰值功率     

高功率微波对抗末敏弹可行性分析

末敏弹作为灵巧弹药的典型代表,对规模集群装甲构成极大的生存威胁。通过对末敏弹作战使用过程和毫米波辐射计的工作原理分析,提出采用高功率微波近距损伤毫米波辐射计射频前端的低噪声放大器的对抗方法。根据低噪声放大器损伤效应的典型阈值,初步探讨了高功率微波对抗系统的等效辐射功率需求和工程应用的可行性。     

Ka波段过模表面波振荡器数值模拟

为解决毫米波雷达对高功率微波源的急迫需求,采用Magic粒子模拟程序和CST高频仿真软件设计了一种工作在Ka波段的高功率表面波振荡器(Surface-wave Oscillator,SWO),该器件具有过模慢波结构,在中等电压(420kV)有较高的注波互作用效率。模拟结果表明这种器件在9.5个周期下能产生650MW输出功率的微波,转换效率达19.3%。     

高功率毫米波回旋器件的需求及发展

本文概述了高功率毫米波回旋器件的主要应用领域和需求,简要介绍了在需求推动下的国际、国内高功率毫米波源——回旋器件研究的现状和发展,对未来高功率毫米波源的发展进行了展望。     

固态微波毫米波器件技术进展

固态微波毫米波半导体材料与器件、固态微波毫米波电路与模块、毫米波与太赫兹技术以及新型固态微波毫米波器件在近年来有很大的发展,在相控阵雷达、电子战、军民用通信领域有广泛的应用前景。当前这些器件应用较为集中于各类T/R组件。文章按固态微波毫米波半导体材料与器件、固态微波毫米波电路与模块、毫米波与太赫兹技术以及新型固态微波毫米波器件的顺序,概要介绍了固态微波毫米波技术的新进展。     

毫米波非致命生物效应试验

W 波段毫米波由于波长短且处于大气窗口,因此易于传输微波能量且波束能量容易集中;在足够功率密度下W 波段毫米波可以对皮肤产生强烈烧灼感,所以适合作为非致命系统的毫米波源,用于警用、防爆、反恐方面。但由于高功率W 波段毫米波的产生与传输比较困难,目前仅美国有相关系统的研制、部署的报道,国内的相关研究起步比较晚。中国科学院电子学研究所高功率毫米波回旋管的研制处于国内先进水平,与军事医学科学院合作进行了W 波段毫米波生物效应试验研究。试验对象主要为小白鼠、大鼠、猪皮、狗等专用试验生物,取得了初步进展。     

欢迎订阅《信息与电子工程》(双月刊)期刊

《信息与电子工程》主要围绕信息化新军事变革中电子信息技术发展的需要,及时传播信息与电子工程领域的新理论、新技术、新成果。重点报道内容:信息工程技术、无线电测控通信技术、雷达技术、自动控制技术、天线技术、微波毫米波技术、高功率微波技术、电子信息对抗技术、微电子与微机电技术、引信技术、电     

无机非金属材料毫米波加热特性理论分析

毫米波加热是无线能量传输的一种重要方式，通过将能源与动力分离，可以大大降低飞行器等动力系统自重，降低系统复杂性，并有效提高载荷率。对无机非金属材料在高能量毫米波加热下的微观特性进行研究，从带电粒子在电磁场中的运动出发获取材料介电性能的微观反映，分析材料各项特性对介电损耗因子的影响，并利用双层介质平板模型探讨毫米波加热的能量吸收效率。研究发现，高能量毫米波加热与常规微波加热本质上相同，优势在于目标结构紧凑、能量密度高；温度对材料介电性质的影响较大，在低温段和高温段能量吸收系数较低。     

表面波等离子体防护高功率微波

高功率微波武器的快速发展,对军用电子设备构成了极大威胁。文章在分析用传统防护手段防护高功率微波方面所具有的缺陷的基础上,提出用表面坡等离子体技术防护高功率微波,并对表面波等离子体防护装置进行了描述,详细阐述了该装置的防护原理,总结了该防护技术在现实防护中的优点。     

大功率、高频段电真空器件在雷达技术领域的应用分析

电真空器件正在向大功率、高频段上发展,该类电真空器件具有高峰值、高平均功率、高工作频率和大带宽的特点。近年来,借助材料科学、微加工方法和技术的进步,电真空器件的频率正在向毫米波、亚毫米波甚至太赫兹频段快速发展。大功率、高频段电真空器件同时具有更高的效率和更宽的带宽,在雷达技术领域有着广阔的应用前景。文中重点介绍了大功率、高频段电真空器件在雷达、电子对抗和微波武器等领域的五个重点发展方向,包括8 mm、3 mm 波段毫米波器件集中式和分布式系统应用、太赫兹频段器件应用、高功率微波系统应用和长脉冲发射技术。最后,展望了未来的需求和发展趋势。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.