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1.
0327835一种用于大面积CMOS FPA的相关双采样保持电路[刊,中]/张智//半导体光电.—2003.24(4).—260-263(D2)提出了一种基于动态源随器的、用于CMOS焦平面阵列的新结构相关双采样保持电路,并与现有的相关双采样保持电路作了详细的比较。理论分析和模拟  相似文献   

2.
应用于大面积焦平面阵列的新结构CMOS相关双采样电路   总被引:1,自引:0,他引:1  
张智  袁祥辉  黄友恕  吕果林 《光电子技术》2003,23(3):154-159,164
提出了一种应用于红外焦平面阵列的新结构相关双采样保持电路。通过片外的积分和相关双采样结构,不仅减小了电路的固定模式噪声和KTC开关噪声;而且选中的一行中的所有像元能同时开始积分;信号的读出过程发生在下一行的选通期间,这有利于提高帧频;电路的输出信号是箱型波,则有利于模数转换。SPICE模拟结果表明,本文提出的新结构基相关双采样保持电路具有结构简单、功耗小、驱动信号源少、能在芯片内实现双采样等优点。  相似文献   

3.
梁宏玉  王妍  李儒章 《微电子学》2022,52(2):283-288
设计了一种桥式并-串联级联结构的高线性度、超宽带采样/保持电路。该采样/保持电路包括输入缓冲器、辅助开关和SEF开关三个单元。采用桥式并-串联级联结构改进的辅助开关模块单元,大幅提高了电路的线性度和带宽。该采样保持电路基于0.13 μm SiGe双极型工艺进行设计,-4.75 V和2 V双电源电压供电。仿真结果表明,在100 fF采样电容、6.25 GHz采样频率、10.28 GHz输入频率的条件下,SFDR为69.60 dB,THD为-65.25 dB,-3 dB带宽达 35.43 GHz。  相似文献   

4.
基于0.7μm的InP双异质结双极晶体管(DHBT)工艺设计了一种超高速宽带采样保持电路。输入缓冲器采用Cherry-Hooper结构有效提升了电路的增益和带宽。时钟缓冲器采用多级Cascode结构提升时钟信号的带宽。芯片面积1.40 mm×0.98 mm,总功耗小于1.1 W。测试结果表明:电路可以在40 GSa/s采样速率下正常工作。电路的-3 dB带宽在采样态为24 GHz,在采样保持态为19 GHz。在采样保持态,当输入4 GHz、-6 dBm信号时,电路的总谐波失真(THD)低于-41.5 dBc,有效位数(ENOB)相当于6.6。时域测试波形在本文也有呈现。  相似文献   

5.
基于SMIC0.18μm,1.8V工艺,设计了一种新型的双采样保持电路,可用于12bit、100MHz采样频率的时间交织流水线(Pipelined)ADC中.设计了一种采用了增益增强技术并带有一种改进的开关电容共模反馈电路的全差分运放.并且针对该双采样保持电路设计了特定的时钟发生电路.在cadence电路设计平台中利用Spectre仿真,结果表明:该采样保持电路可以实现12位、100MS/s采样速率和15mW功耗,满足系统设计要求.  相似文献   

6.
吴剑龙  于映 《现代电子技术》2007,30(19):165-167,171
介绍了一种高性能的采样保持电路。他采用双采样结构,使得在同样性能的运算放大器条件下,采样速率成倍提高,降低对运放的要求;使用补偿技术的两级运算放大器有较高增益和输出摆幅;采用栅压自举电路,消除开关导通电阻的非线性,减小电荷注入效应和时钟溃通。在SMIC 0.25μm标准工艺库下仿真,该采样保持电路可试用于高速高精度流水线ADC。  相似文献   

7.
用通用运算放大器构成的用于线阵 CCD 输出信号处理的相关双σ取样电路,其取样速率可达250kHz。电路简单实用。本文着重讨论了有关元器件参数的选取原则,这对于设计高速双σ采样/保持电路有一定参考价值。  相似文献   

8.
介绍了接触式图像传感器(CIS)的简要原理和存在的噪声类型,阐述了用相关双采样来消除这些噪声的机理,分析了CIS要求的驱动信号CP、SP和采样保持信号SH1、SH2之间的时序关系,并用复杂可编程逻辑器件(CPID)来产生这几个信号.分析了相关双采样电路的工作原理,在此基础上进行了实验.实验表明,用相关双采样抑制CIS中的噪声,能够得到较为满意的结果.  相似文献   

9.
陈达  于奇  吴霜毅  宁宁  伍翠萍  王浩娟 《微电子学》2007,37(6):848-851,856
提出了一种基于时间交织原理的双采样/保持电路;分析了其相比于传统单采样技术实现高速度、高精度,同时降低功耗的优点。设计的栅压自举开关有效提高了采样的线性度。另外,为满足双采样技术的特殊应用,设计了带双边型开关电容共模反馈的全差分运放。采用SMIC0.18μmCMOS工艺仿真设计的双采样/保持电路可实现12位采样精度、100 MSPS采样速率、92.34 dB线性度和29 mW功耗的高性能。  相似文献   

10.
提出了一种高性能CMOS采样/保持电路,它采用全差分电容翻转型的主体结构有效减小了噪声和功耗。在电路设计中提出了新型栅源电压恒定的自举开关来极大减小非线性失真,并同时有效抑止输入信号的直流偏移。该采样/保持电路采用0.18μm1P-6M CMOS双阱工艺来实现,在1.8V电源电压、32MHz采样速率下,输入信号直到奈奎斯特频率时仍能达到86.88dB的无杂散动态范围(SFDR),电路的信号噪声失真比(SNDR)为73.50dB。最后进行了电路的版图编辑,并对样片进行了初步测试,测试波形表明,电路实现了采样保持的功能。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

17.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

18.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

19.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

20.
An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.  相似文献   

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