太赫兹液晶器件的研究进展

基于液晶技术的太赫兹器件的研究开发已经成为该领域研究的重要方向之一。介绍了太赫兹器件的应用背景和太赫兹液晶器件的基本知识,并重点介绍了液晶在太赫兹频域的光电性质和材料特性,指出了若干有潜在可行性的液晶材料。在此基础之上对太赫兹液晶移相器、太赫兹可调液晶滤波器、太赫兹可调偏振器等液晶器件的设计原理和目前的研究结果进行了分析。最后,对太赫兹液晶器件的产品应用开发进行了总结分析,提出了此类元器件的研究开发方向。     

液晶介电常数在微波至太赫兹频段测试技术

基于液晶材料的器件成为毫米波及太赫兹波领域的重要方向之一,文中总结了毫米波太赫兹波液晶器件的研究进展,介绍了液晶移相器的基本原理及应用,分析了液晶介电常数的主要测试方法,如传输线/反射法、谐振腔法、自由空间法、时域法等,比较了不同方法的测试频率范围和优缺点,并给出了向列相液晶材料在微波毫米波及太赫兹波段的介电常数的主要测试结果。     

液晶太赫兹光子学研究进展

液晶作为液态和固态之间的中间态，具有液体的流动性和晶体的各向异性，其指向矢灵活可调，从微波到紫外都有广泛应用。近年来液晶光子学在太赫兹波段展现出巨大应用前景，本文综述了基于液晶的太赫兹源、可调太赫兹器件和太赫兹探测器的研究进展，探讨了未来液晶太赫兹光子学的发展趋势，如新型铁电向列相、液晶拓扑在太赫兹领域的应用，多模式、多参量的太赫兹波按需产生、调制与探测等。     

太赫兹可编程超材料的研究进展和在单像素成像中的应用

人工电磁超材料展现了强大的电磁波调控能力. 随着可编程超材料的提出,超材料向数字化、智能化的方向不断发展. 本文首先回顾了太赫兹可编程超材料的研究进展,重点讨论基于半导体、液晶等可调材料的太赫兹可编程超材料的设计方法、调控原理及应用. 然后,介绍了太赫兹可编程超材料在单像素成像中的应用,即利用电控和光控可编程超材料实现太赫兹光的空间编码调制,结合压缩感知等成像算法,实现太赫兹单像素成像. 最后,对太赫兹可编程超材料的发展趋势和应用前景进行了展望.     

基于塞贝克效应的高响应度太赫兹探测器的研究

针对微弱太赫兹激光功率的测试需求,本文研究一种可以提高太赫兹探测器响应度的方法。采用反射式太赫兹时域光谱分析仪测试太赫兹激光吸收材料的吸收率,选择吸收率高的材料作为太赫兹激光的吸收材料;使用直流磁控溅射技术在太赫兹激光吸收材料底部均匀的镀上一层金薄膜;利用具有高导热率和高粘接强度的固化液体硅胶把太赫兹激光吸收材料与热电堆的热端粘接在一起,并把热电堆的冷端与热沉紧密粘贴。理论分析和实验结果表明此方法有效提高了热电堆的热电转换率和吸收材料对太赫兹激光的吸收率,从而使太赫兹探测器的响应度提升了7.9%。因此,本文研制的太赫兹探测器在0.1 THz~10 THz范围内,能够实现微瓦量级太赫兹激光功率的测试。     

可调谐太赫兹超材料吸波器研究进展

太赫兹超材料吸波器具有吸收强、厚度薄、质量轻等优点,已被广泛应用于隐身材料、频率选择表面、太赫兹成像、通信传感等方面。但是,基于金属结构的传统太赫兹超材料吸波器一旦完成加工后,它的吸收性能是固定不变的。为解决这一问题,研究人员通过引入活性超材料设计了可调谐太赫兹超材料吸波器。结合可调谐太赫兹超材料吸波器的国内外研究现状,分类阐述了几类典型的可调谐太赫兹超材料吸波器,重点对单频带、多频带、宽频带以及可切换双功能太赫兹超材料吸波器的相关研究工作进行了梳理与总结,并对其未来发展趋势进行了分析。     

太赫兹雷达及其隐身技术

近十多年来,太赫兹波技术领域基础研究的蓬勃发展带动了其应用领域的迅速扩大。本文主要介绍了应用于军事领域的太赫兹雷达的特点、国内外研究情况和存在问题,以及应用于隐身技术领域的泡沫型太赫兹吸波材料、太赫兹吸波涂层、左手材料的研究进展。     

基于超材料的太赫兹波吸波材料

超材料是一种人工设计的具有周期单元阵列结构的电磁材料,具有超常物理特性。基于超材料的太赫兹吸波材料在太赫兹技术领域有许多潜在的应用。简述了超材料吸波材料的理论基础,综述了国内外在单频、双频、多频带和宽带太赫兹超材料吸波材料领域的研究进展,并展望了太赫兹吸波材料研究的未来发展方向和趋势。     

太赫兹缝隙衍射的严格求解方法

基于严格电磁场理论和结构拓展思想,提出了太赫兹缝隙结构衍射的严格物理模型,得到了太赫兹缝隙衍射情形下入射、衍射和透射区域内电磁场基本模式的严格表达。数值计算表明太赫兹波在晶体(砷化镓)、非金属(FR-4)等材料缝隙的透射系数与太赫兹波频率的变化趋势大体相似,得出缝隙材料对太赫兹波的透射系数影响不明显;但是,缝隙的个数、材料的种类以及基底材料的厚度对太赫兹缝隙衍射最大透射系数的影响明显。本文方法也可用于研究太赫兹波亚波长区域内、微纳光学元件体内衍射传输等问题。     

太赫兹液晶可调谐功能器件

介绍了不同液晶材料在太赫兹(THz)波段的光学各向异性和外场调制特性。在此基础上,综述了几种基于液晶与人工电磁微结构相结合的THz功能器件,该器件可实现对THz波的调谐滤波、电磁诱导透明、相位调制以及偏振控制功能等;系统地分析了液晶与人工电磁微结构的相互作用机理、THz波长尺度下液晶的外场调控规律与表面相互作用。此外,还对THz液晶光子器件的研究发展趋势进行了展望。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.