Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 °C were cubic crystalline InN; and at 500 °C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 °C. The inclusion of metallic indium appeared on the InN film deposited at 500 °C.     

Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing

Bismuth thin films were grown on oxidized Si substrates by electron beam evaporation. The films showed clear tendency to form hillocks inducing large surface roughness. The evolution of hillocks with film thickness and deposition rate was studied. In order to improve the surface quality of the Bi films a nanoscale mechanical polishing was performed. Upon polishing, hillocks-free Bi thin films were obtained without influencing the crystalline structure and the resistivity of the films. The achieved film surface quality allows to prepare high quality Bi Hall probes with an active area down to the nm² range promising for advanced device performance.     

Ionized-cluster beam deposition and epitaxy

Film formation by ionized-cluster beam deposition and epitaxy is characterized by various processes including sputtering, substrate surface heating effects, ion implantation effects and adatom migration. These processes can be utilized to form films of good crystalline quality. The technology is applicable for the formation of various kinds of films such as metals, semiconductors and insulators. The films show unique characteristics which cannot be obtained by conventional methods. A general review of ionized-cluster beam deposition and epitaxy is given and its application to electron devices is described.     

Process optimization and related material properties of silicon films produced by laser-induced chemical vapour deposition from silane

Laser-induced chemical vapour deposition of silicon films on SiO₂/Si (1 0 0) and Si (1 0 0) substrates was studied using ArF laser irradiation of silane/argon gas mixture in parallel to the substrate. The optimal deposition conditions were specified by examination of film morphology at a wide range of irradiation and process parameters. At optimal conditions, specular films were obtained with no powder formation. The effect of deposition parameters, such as laser energy and repetition rate, on the deposition rate and the related film quality, was investigated.     

Thin film deposition on plastic substrates using silicon nanoparticles and laser nanoforming

Reduced melting temperature of nanoparticles is utilized to deposit thin polycrystalline silicon (c-Si) films on plastic substrates by using a laser beam without damaging the substrate. An aqueous dispersion of 5 nm silicon nanoparticles was used as precursor. A Nd:YAG (1064 nm wavelength) laser operating in continuous wave (CW) mode was used for thin film formation. Polycrystalline Si films were deposited on flexible as well as rigid plastic substrates in both air and argon ambients. The films were analyzed by optical microscopy for film formation, scanning electron microscopy (SEM) for microstructural features, energy dispersive spectroscopy (EDS) for impurities, X-ray photoelectron spectroscopy (XPS) for composition and bond information of the recrystallized film and Raman spectroscopy for estimating shift from amorphous to more crystalline phase. Raman spectroscopy showed a shift from amorphous to more crystalline phases with increasing both the laser power and irradiation time during laser recrystallization step.     

Substrate temperature dependent morphology and resistivity of pulsed laser deposited iridium oxide thin films

Iridium oxide (IrO₂) thin films were deposited on Si (100) substrates by means of pulsed laser deposition technique at various substrate (deposition) temperatures ranging from 250 to 500 °C. Effects of substrate temperature on the crystalline nature, morphology and electrical properties of the deposited films were analyzed by using X-ray diffraction, Raman spectroscopy, Scanning electron microscopy and four-point probe method. It was found that the above properties were strongly dependent on the substrate temperature. The as-deposited films at all substrate temperatures were polycrystalline tetragonal IrO₂ and the preferential growth orientation changed with the substrate temperature. IrO₂ films exhibited fairly homogeneous thickness and good adhesion with the substrate, the average feature size increases with the substrate temperature. The room-temperature resistivity of IrO₂ films decreased with the increase of substrate temperature and the minimum resistivity of (42 ± 6) μΩ cm was obtained at 500 °C. The resistivity of IrO₂ films correlated well with the corresponding film morphology changes.     

离子束辅助沉积引发互不固溶系非晶相和亚稳晶相形成

利用离子束辅助沉积技术（IBAD）研究了在互不固溶的Cu-Ta和Cu-Nb系统中获得非晶相和亚稳晶体的可能性,结果表明：r(Cu)为30％时Cu含量的Cu-Ta薄膜得到了非晶相;r(Cu)为25％－35％时Cu-Nb薄膜中随辅助等离子束能量的改变出现了fcc相－非晶相转变;r(Cu）和20％时Cu-Nb薄膜中得到了bcc相,说明IBAD技术可以在互不固溶二元合金系统中制备非晶和亚稳晶相,非晶或亚稳晶的形成是由薄膜沉积过程中辅助离子束的作用引起的。     

Preparation and characterization of highly <Emphasis Type="Italic">c</Emphasis>-axis textured MgO buffer layer grown on Si(100) substrate by RF magnetron sputtering for use as growth template of ferroelectric thin film

Highly c-axis textured MgO thin films were grown directly on Si(100) substrates without any buffer layer by RF magnetron sputtering for use as growth template of ferroelectric film. We fixed the target-to-substrate spacing of 40 mm and then changed the substrate temperature, deposition pressure, and RF power to study the effect of deposition parameters on the growth of c-axis textured MgO thin films. The as-grown films were post-annealed by the rapid thermal annealing (RTA) and furnace annealing to improve the film quality. The experimental results show that the optimum deposition parameters are substrate temperature of 350 °C, oxygen pressure of 15 mTorr and RF power of 75 W. The full width at half maximum intensity (FWHM) of MgO(200) peak obtained from the XRD measurement was 0.8°, and it was further reduced to 0.5° and 0.27° after annealing by RTA and furnace, respectively. Highly c-axis textured PZT and BaTiO₃ films could be obtained on this template. Hysteresis loops of the BaTiO₃ films deposited on MgO(100) single crystalline substrate and MgO(200)/Si(100) template were measured for comparison. The results show that MgO/Si templates thus obtained are suitable for the synthesis of perovskite ferroelectric thin films.     

Effect of annealing on magnetic properties and silicide formation at Co/Si interface

The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a vacuum of 4×10^?8 Torr having a deposition rate of about 0·1 Å/s. Reactivity at Co/Si interface is important for the understanding of silicide formation in thin film system. In the present paper, cobalt silicide films were characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the surface and interface morphologies and depth profile, respectively. The roughness of the samples was found to increase up to temperature, 300°C and then decreased with further rise in temperature, which was due to the formation of crystalline CoSi₂ phase. The effect of mixing on magnetic properties such as coercivity, remanence etc at interface has been studied using magneto optic Kerr effect (MOKE) techniques at different temperatures. The value of coercivity of pristine sample and 300°C annealed sample was found to be 66 Oe and 40 Oe, respectively, while at high temperature i.e. 748°C, the hysteresis disappears which indicates the formation of CoSi₂ compound.     

Photoluminescence characterization of β-FeSi2 prepared by ion beam sputter deposition (IBSD) method

Photoluminescence (PL) measurement technique was found to be effective in revealing the unique characteristics of β-FeSi₂ film formation on Si substrates by means of ion beam sputter deposition (IBSD) method. A strong photoluminescence peak at around 0.8 eV was observed for β-FeSi₂ samples and also for Si substrates that were sputter etched by Ne⁺, and then thermally annealed in air at elevated temperature. Comparison with literature data indicated that the PL peak at 0.8 eV observed in this study was mainly from D1 emission bands in Si substrate, whose intensity was enhanced by the sputter etching and the subsequent annealing of the substrate. Furthermore, comparison between CZ-Si and FZ-Si results indicated that the energy of 0.8 eV peak observed in this study was affected by the presence of oxygen in the Si bulk as well.     

Fabrication of resonant-tunneling diodes by Sb surfactant modified growth of Si films on CaF/sub 2//Si

Molecular beam epitaxy growth of Si thin films on CaF/sub 2//Si(111) substrates has been studied. A surfactant-modified solid-phase epitaxy method, where the room temperature Si deposition was followed by annealing under Sb flux, resulted in a continuous, smooth epitaxial crystalline Si film with a sharp (/spl radic/3/spl times//spl radic/3)R30/spl deg/ reconstruction and a surface roughness of 0.15-nm rms for a 2.8-nm Si thin film. This growth technique was used to fabricate CaF/sub 2//Si/CaF/sub 2/ double-barrier resonant tunneling diodes in SiO/sub 2/ windows patterned on Si(111) substrates. A negative differential resistance (NDR) peak was found at /spl sim/0.35 V at 77 K, and the current density at the NDR peak was estimated to be 3-4 orders of magnitude higher than in earlier reports.     

Formation of crystalline aluminum silicate hydroxide layer during deposition of amorphous alumina coatings by electron beam evaporation

Aluminum oxide films were deposited on fused silica and borosilicate glass substrates by electron beam evaporation, without any substrate heating. Grazing incidence X-ray diffraction measurements found that a layer of crystalline aluminum silicate hydroxide was formed at the interface of the substrate and the amorphous alumina film, the latter transformed to γ-alumina phase on heat treatment at 800 °C. The aluminum silicate hydroxide layer was produced by the chemical reaction between condensing Al and Al–O species, OH⁻ from the residual water vapors in the chamber and Si atoms from the underlying silica and borosilicate glass substrates.     

Influence of growth parameters on the microstructures of erbium films deposited on Si(111) substrates

Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 °C, but in the films grown at temperatures higher than 350 °C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 °C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 °C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate.     

Phase separated AlSi thin films prepared by filtered cathodic arc deposition

Phase separated AlSi films composed of Al cylinders embedded in an amorphous Si matrix were prepared on conducting Si substrates by filtered cathodic arc deposition. The compositional dependence of AlSi films on a negative substrate bias showed a different trend depending on the cathode composition because of the self-sputtering process during the deposition. The porous structure was obtained from the phase separated AlSi film after removal of Al cylinders by wet etching in an ammonia solution. Scanning electron microscope images of the etched AlSi films showed that the average diameter of pores was increased from 3 nm to 7 nm by applying a negative substrate bias voltage during the deposition. The honeycomb ordered arrangement of pores was observed at 0 V and − 25 V substrate bias. The substrate temperature during the depositions had almost the same effect on the film morphologies as the negative substrate bias.     

Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma

Polycrystalline silicon (poly-Si) films were deposited on glass substrates (corning 7059) at 300°C by a plasma enhanced chemical vapor deposition (PECVD) from a SiH₄/SiF₄ mixture. All poly-Si films were prepared under the same deposition conditions on the substrates subjected to nitrogen, hydrogen and/or CF₄ plasma with different gas pressures, just before deposition of the poly-Si films. Effects of such pretreatments for substrates on the structural properties of the resultant poly-Si films have been investigated. The Si film deposited on the substrates without any pretreatments was amorphous. However, formation of a strong 〈110〉 preferentially oriented poly-Si with improved crystallinity was obtained for the films deposited on the glass substrate after plasma pretreatments, which exhibit smoother surfaces. This result was interpreted in terms of a removal of weak Si–Si bonds during nucleation and the subsequent grain growth.     

Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer

ZnO thin films are grown on Si substrates with SiC buffer layer using ion plasma high frequency magnetron sputtering. These substrates are fabricated using a technique of solid phase epitaxy. With this technique SiC layer of thickness 20-200 nm had been grown on Si substrates consisting pores of sizes 0.5-5 μm at SiC and Si interface. Due to mismatching in lattice constants as well as thermal expansion coefficients, elastic stresses have been developed in ZnO film. Pores at the interface of SiC and Si are acting as the elastic stress reliever of the ZnO films making them strain free epitaxial. ZnO film grown on this especially fabricated Si substrate with SiC buffer layer exhibits excellent crystalline quality as characterized using X-ray diffraction. Surface topography of the film has been characterized using Atomic Force Microscopy as well as Scanning Electron Microscopy. Chemical compositions of the films have been analyzed using Energy Dispersive X-ray Spectroscopy. Optical properties of the films are investigated using Photoluminescence Spectroscopy which also shows good optical quality.     

Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition

Microcrystalline silicon films (μc-Si:H) were deposited on stainless steel substrates by bias-assisted hot-wire chemical vapor deposition. The effect of substrate bias and substrate temperature on the crystallinity of μc-Si:H films was studied by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that both the Raman peak position and the crystalline fraction of the μc-Si:H films deposited at 200 °C were obviously improved by introducing ?800 V substrate bias. The films deposited at 200 °C with ?800 V substrate bias show strongly sharpened Si (111) peak together with Si (220) and Si (311) peaks, which was different from a weak Si (111) peak for those deposited without substrate bias. By increasing the substrate temperature from 200 to 300 °C, while keeping the substrate bias at ?800 V, the crystallinity of the silicon films was further improved, and μc-Si:H films with crystalline fraction of 74 % was obtained.     

In situ micro-Raman spectroscopic study of laser-induced crystallization of amorphous silicon thin films on aluminum-doped zinc oxide substrate

The effects of laser irradiation condition and deposition substrate on the laser crystallized 330?nm Si films structure were investigated using in situ micro-Raman spectroscopy. Results showed that crystallization of amorphous silicon (a-Si) films started at laser irradiation power density of 0.6?×?10⁵?W/cm² for 20?s. The crystalline volume fraction of Si films depended mostly on the laser power density but not on the laser irradiation time. The Si films on both smooth and textured aluminum-doped zinc oxide (AZO) substrates exhibited lower crystalline volume fraction and smaller average grain size than the Si films on glass did. The Si films on textured AZO revealed higher crystalline volume fraction and larger average grain size than the Si films on smooth AZO did. The stress in crystalline Si films was observed to be compressive on AZO and tensile on glass. The compressive stress in crystalline Si films on textured AZO was slightly less than that on smooth AZO. The present work indicated that the structure of crystalline Si films on textured AZO was improved than that on smooth AZO, which may be helpful to crystalline Si thin-film solar cell.     

Reactive particle beam based deposition process of nano-crystalline silicon thin film at low temperature for the flexible AM-OLED backplane

A novel deposition process for depositing nano-crystalline silicon (nc-Si) thin films at low temperature was developed using reactive particle beam assisted chemical vapor deposition (RPB-CVD) for applications to the thin film transistor (TFT) backplane of flexible active matrix-OLEDs with plastic substrates. During the formation of nc-Si thin films by the RPB-CVD process with a silicon reflector electrode at low temperatures or room temperature, energetic particles could induce the formation of a crystalline phase in polymorphous Si thin films without additional substrate heating. The effects of the incident RPB energy controlled by the reflector bias were confirmed by Raman spectroscopy. The dark conductivity of polymorphous Si thin films increased with increasing reflector bias, whereas the ratio of photo and dark conductivity decreased monotonically. The optical band gap of the Si thin films also could be changed from amorphous to nano-crystalline by controlling the reflector bias. The first results of a primitive nc-Si TFT by RPB-CVD at room temperature demonstrate the technical potential of RPB-based processes as flexible TFT backplanes.     

Influence of laser wavelength and beam profile on Nd:YAG laser assisted formation of polycrystalline-Si films

Influence of wavelengths and beam profiles of a pulsed Nd³⁺:YAG laser on the formation of a polycrystalline-silicon (poly-Si) on a-Si thin film is investigated. Two sets of samples of amorphous-Silicon (a-Si) thin films deposited on glass (a-Si/glass) and crystalline Si (a-Si/c-Si) substrates were treated with different laser-fluence values. After the laser treatment, the films were analyzed by a scanning electron microscope, the Raman spectroscopy technique and the resistance-measurement technique. In the case of the third harmonics (355 nm) of the Nd³⁺:YAG laser, poly-Si films were obtained with laser-fluence values ranging from 260 mJ/cm² to 560 mJ/cm², where as in the case of the second harmonics (532 nm), the process window for the formation of poly-Si films, in terms of the laser fluence, was ranging from 300 mJ/cm² to 480 mJ/cm². On the other hand, in the case of samples treated with the fundamental wavelength (1064 nm), a narrow process window with higher laser-fluence values around 1100 mJ/cm² was observed. Further, the substrate was also affected because of the higher laser-fluence value. It has also been observed that the crystallization characteristics of poly-Si films improved with the flat-top intensity distribution as compared to the Gaussian intensity distribution of the Nd³⁺:YAG laser beam. A theoretical simulation based on thermal modeling was performed to understand the mechanism of crystallization.