Copper doped zinc oxide Y2BaZnO5: ERS and optical investigation

In copper doped Y₂BaZnO₅ oxides, copper exhibits a distorted square pyramidal coordination which is consistant with the values of g and A tensors obtained from O band ERS spectrum for a sample containing about 1 % Cu. Three values for g and A are observed, g₁ = 2.049₅, g₂ = 2.051₅, g₃ = 2.275, $\text{¦}\text{A}{}_1\text{¦ = 13 10}{}^{\mathrm{?4}}\text{cm}{}^{\mathrm{?1}}$, $\text{¦}\text{A}{}_2\text{¦ = 10 10}{}^{\mathrm{?4}}\text{cm}{}^{\mathrm{?1}}$ and $\text{¦}\text{A}{}_3\text{¦ = 147.5 10}{}^{\mathrm{?4}}\text{cm}{}^{\mathrm{?1}}$. Since $\text{g}{}_1\text{?}\text{g}{}_2$ an approximate C_4v point symmetry can be assumed for copper. The electronic spectrum shows three bands at 11700, 14500 and 20500 cm^?1 which can be assigned to the transitions A₁ → B₁, B₂ → B₁ and E → B₁ respectively. The orbital reduction parameters are calculated and the bonding covalency is discussed.     

CuTa2O6 - crystal growth and characterization

The compound CuTa₂O₆ has been prepared as crystals from a Cu/O melt and found to be tetragonal ($\text{a}\text{= 7.510}\text{A}\text{?}$, $\text{c}\text{= 7.526}\text{A}\text{?}$) rather than cubic as reported in the literature. The coefficient of thermal expansion between room temperature and 1000°C was found to be 8.0 × 10^?6°C^?1. Electrical resistivity measurements on a crystal showed semiconductor behavior between room temperature ($\text{? = 2 × 10}{}^3\text{Ω}\text{cm}$) and 140°K ($\text{? = 7 × 10}{}^6\text{Ω}\text{cm}$) with an activation energy of E_A = 0.2 eV. Magnetic measurements between 4.2°K and room temperature showed Curie-Weiss behavior with a change in μeff at 120°K. For T>120°K, μeff = 1.76μ_B and θ_p = 0°K while for T<120°K μeff = 1.91 μB and θ_p = ?15°K.     

Photoelectrochemical study of TiS3 in aqueous solution

TiS₃ single crystals have been grown by chemical vapor transport. They were characterized by X-ray diffraction and measurement of their electronic transport properties. A photoelectrochemical study shows both anodic and cathodic dark currents and anodic photocurrents. Flat band potentials and anodic corrosion p$\text{o}$te$\text{n}$tials in acidic and basic solutions and in the presence of an $\text{I}{}^{\mathrm{?}}{}_3\text{I}{}^{\mathrm{?}}$ redox couple have been determined from the onset of photocurrent and from the Schottky-Mott plot of capacitance. The flat band potential ex$\text{h}$ibits a pH dependence but is almost independent of the presenc$\text{e}$ o$\text{f}$ I^? in solution. The stability of this material in a 1N H₂SO₄+ 1N $\text{I}{}^{\mathrm{?}}{}_3\text{I}{}^{\mathrm{?}}$ solution has been observed for a period of fourteen days with a photocurrent of approximately $\text{1}\text{mA}\text{cm}{}^2$. A particular photocorrosion mechanism is reported. The reaction starts at the edges of the layer and proceeds toward the interior. These mechanisms are discussed in relation to the existence of two types of S atoms in the structure: sulfur dimers and S^2? ions.     

Conductivite electrique et spectres de diffusion raman des verres mixtes AgPO3 − MI2 AVEC M = Cd,Hg, Pb. Correlation entre conductivite et structure

The glass-forming regions in the AgPO₃ ? MI₂ systems with M = Cd,Pb,Hg were determined. Electrical conductivity measurements and Raman spectra were carried out. A maximum conductivity value of $\text{10}{}^{\mathrm{?2}}\text{(Ω}\text{cm}\text{)}{}^{\mathrm{?1}}$ at 25°C is obtained for a mole fraction of 0,19 in PbI₂ or in CdI₂, whereas a value of $\text{3×10}{}^{\mathrm{?5}}\text{(Ω}\text{cm}\text{)}{}^{\mathrm{?1}}$ at 25°C is found for a mole fraction of 0,5 in HgI₂. The conductivity results and Raman spectra are examined and compared with those of AgPO₃ ? AgI. An exchange between Ag⁺ and M²⁺ ions is proposed leading to AgI species in AgPO₃ ? CdI₂ and AgPO₃ ? PbI₂ glasses. It could explain the high conductivity values obtained and the similarities observed in Raman spectra.     

Ionic conductivity of Li4GeO4, Li2GeO3 and Li2Ge7O15

The ionic conductivity of polycrystalline samples of three lithium germanates: Li₄GeO₄, Li₂GeO₃, and Li₂Ge₇O₁₅, has been determined using a c techniques and complex plane analysis. Conductivities at 400°C are 8.7 × 10^?5, 1.5 × 10^?5, and $\text{1.4 × 10}{}^{\mathrm{?7}}\text{(Ω·}\text{cm}\text{)}{}^{\mathrm{?1}}$ respectively. The conductivity of Li₄GeO₄ rises appreciably in the range 700–750°C.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Thermal expansion of corundum structure Rh2O3

The directional thermal expansion coefficients of the corundum structure form of Rh₂O₃ were determined from room temperature to 850°C by x-ray diffraction methods. Rh₂O₃ has a lower thermal expansion and is less anisotropic in thermal expansion than alumina. The directional thermal expansion coefficients of Rh₂O₃ expressed in second degree polynominal form are: $\text{“α}{}_{\mathrm{<mtext>a</mtext>}}\text{” = 5.350 ×10}{}^{\mathrm{?6}}\text{+ 1.281 ×10}{}^{\mathrm{?9}}\text{T}\text{? 1.133 ×10}{}^{\mathrm{?14}}\text{T}{}^2\text{/°}\text{C}$ and $\text{“α}{}_{\mathrm{<mtext>c</mtext>}}\text{” = 5.246 ×10}{}^{\mathrm{?6}}\text{+ 6.369 ×10}{}^{\mathrm{?9}}\text{T}\text{? 7.480 ×10}{}^{\mathrm{?14}}\text{T}{}^2\text{/°}\text{C}$.     

Un nouveau conducteur protonique [H(H2O)n]12Sb12O36 (n ⩽ 1)

Single crystals of K₁₄Sb₁₂O₃₆F₂ undergo rapid ion exchange in 9N sulfuric acid to produce “hydronium” compound (H(H₂O)_n)₁₂Sb₁₂O₃₆ (n ? 1). Between 30 and 140°C this phase undergoes a partial and reversible dehydratation in which approximately 85 % of its “H₃O⁺” content is converted to H⁺.The structures of hydrated and dehydrated phases have been refined by full-matrix least squares, respectively to factor R = 0.030 and 0.047. The conductivity of $\text{(H(H}{}_2\text{O)}{}_{\mathrm{<mtext>n</mtext>}}\text{)}{}_{12}\text{Sb}{}_{12}\text{O}{}_{36}\text{(σ}{}_{20}\text{? 1O}{}^7\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$) increases in an Arrhenius relationship with an activation energy of 8.8 kcal.mole^?1, the dehydrated compound (H(H₂O)_0.33)₁₂Sb₁₂O₃₆ has a much lower conductivity but the same activation energy.     

Nouveaux conducteurs ioniques caracterises par une structure a tunnels entrecroises

The ionic conductivity of pyrochlores A_1+α(Ta_1+αW_1?α)O₆ was investigated for A = Na and T1. The thallium compounds are rather good conductors (0.34 ≤ ΔE ≤ 0.40 eV and $\text{5 10}{}^{\mathrm{?8}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}\text{≤}{}^{\mathrm{\sigma }}\text{25°}\text{C}\text{≤ 5.5 10}{}^{\mathrm{?5}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}$); the sodium oxides are poor conductors (0.76 eV ≤ ΔE ≤ 1.48 eV and $\text{10}{}^{\mathrm{?7}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}\text{≤}{}^{\mathrm{\sigma }}\text{500}\text{K}\text{≤ 10}{}^{\mathrm{?5}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}$). The differences between these two classes of pyrochlores are explained in terms of structure. New non-stoechiometric oxides T1_12+x(M_30+xW_3?x)O₉₀, with M = Ta, Nb, and 0 ≤ x ≤ 3, were isolated. They are, like pyrochlores, characterized by an intersecting tunnel structure, which is an intergrowth of pyrochlore and A₂M₇O₁₈ structures. These oxides show ionic conduction properties which are very close to those of pyrochlores: the tantalum oxides are better conductors (0.30 eV ≤ ΔE ≤ 0.37 eV ; $\text{3.6 10}{}^{\mathrm{?7}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}\text{≤}{}^{\mathrm{\sigma }}\text{25°}\text{C}\text{≤ 1.4 10}{}^{\mathrm{?6}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}$) than the niobium oxides (0.36 eV ≤ ΔE ≤ 0.42 eV ; $\text{10}{}^{\mathrm{?7}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}\text{≤}{}^{\mathrm{\sigma }}\text{25°}\text{C}\text{≤ 3.8 10}{}^{\mathrm{?7}}\text{(Θ}\text{cm}\text{)}{}^{\mathrm{?1}}$). The evolution ofionic conduction properties of all these compounds is discussed.     

Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniques

The ion dose dependence of the infrared transmission spectra of SiO₂ layers formed by high dose ion implantation into silicon was investigated for ion doses ranging from $\text{10}{}^{16}\text{to}\text{2 × 10}{}^{18}\text{(}{}^{16}\text{O}{}_2\text{)}{}^{\mathrm{+}}\text{30}\text{kV ions cm}{}^{-2}$. The annealing temperature dependence of these spectra is also reported.The passivation properties of the SiO₂ layers and their dependence on annealing were investigated and monitored by IR techniques. It was found that an SiO₂ layer that is formed by implantation with 1 × 10¹⁸ ions cm^-2 and annealed at temperatures higher than 550 °C but not more than 800 °C is similar in its IR and passivation properties to thermally grown SiO₂ films.     

Carburization and decarburization kinetics of iron in CH4 — H2 mixtures between 1000 – 1100 °C

In this study the rate constants of the methane decomposition reaction on iron surfaces were determined in the 1000–1100°C temperature range, by grav? metric methods. Earlier works showed that the reaction velocity was given by The results indicate that the constant values vary from 2.72 × 10^?6 to $\text{16.74 × 10}{}^{\mathrm{?6}}\text{mol C/cm}{}^2\text{/sec/atm}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ for k and 2.61 × 10^?8 to $\text{8.62 × 10}{}^{\mathrm{?8}}\text{mol C/cm}{}^2\text{/sec/atm}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ for k′ between 1000 and 1100°C.     

Ionic conductivity in low carnegieite compositions based on NaAlSiO4

Carnegieite compositions of the type Na_1+xAl_1+xSi_1?xO₄ with x = 0 to ～0.7 were prepared. Na ion conductivities, measured with Na and Au electrodes at ～10³ Hz, range from $\text{4×10}{}_{\mathrm{?5}}\text{(Ω-}\text{cm}\text{)}{}^{\mathrm{?1}}$ for NaAlSiO₄ to $\text{5×10}{}^{\mathrm{?3}}\text{(Ω-}\text{cm}\text{)}{}^{\mathrm{?1}}$ at 300 C for Na_1.7Al_1.7Si_0.3O₄. Substitutions of Li, K, Ca, or Sr for Na lowered σ whereas substitution of Ti for Si raised σ. Na aluminum silicates with the nepheline structure had lower σ than carnegieite compositions.     

Une modelisation du comportement magnetique d'un compose de l'iridium pentavalent: LaLi12Ir12O3

A new interpretation is proposed for the magnetic properties of perovskite-type iridium (+V) oxide $\text{LaLi}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{Ir}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{O}{}_3$. In its unusual +5 oxidation state iridium has a t⁴_2ge⁰_g configuration. The magnetic susceptibility has been calculated assuming cubic symmetry of the crystal field and a Coulomb repulsion of the same order of magnitude than spin-orbit coupling. Fitting of the experimental data leads to a single spin-orbit constant $\text{ζ ? 3470}\text{cm}{}^{\mathrm{?1}}$ close to that of previously investigated Ir(+V) compounds.     

Electrical and optical properties of MoSe2 films prepared by r.f. magnetron sputtering

The electrical resistivity of MoSe₂ films prepared by r.f. magnetron sputtering was measured between 300 and 10 K. The main sputtering parameter governing the physical properties of the films was found to be the substrate temperature T_sub. The room temperature resistivity of the as-sputtered films increased from $\text{1.7 × 10}{}^{-1}\text{Ω}\text{cm}$(T_sub = -70 °C) to $\text{1.4 × 10}{}^1\text{Ω}\text{cm}\text{(T}{}_{\mathrm{<mtext>sub</mtext>}}\text{= 150 °}\text{C}\text{)}$. A check of the thermo-electrical response showed that the majority charge carriers are holes except for films deposited at T_sub = 150 °C which are n type. Hall effect measurements indicated very low Hall mobilities (3–5 cm² V^-1 s^-1). Thermal annealing increased the room temperature resistivities by more than one order of magnitude for the specimens sputtered at a low substrate temperature. The optical properties were weakly influenced by the process conditions. The optical gap was determined to be 1.06 eV.     

Growth,electrical and photoelectrical properties of Tl3SbS3single crystal

The growth of Tl₃SbS₃ single crystal is reported for the first time. 5×1×1 cm³ ingots are obtained by using vertical Bridgmann method with a 2°C/mm gradient and a 0.7 mm/h growth rate. Intrinsic conductivity and photoconductivity are investigated. The weak dark conductivity, $\text{～ 10}{}^{\mathrm{?10}}\text{(Ω}\text{cm}\text{)}{}^{\mathrm{?1}}$ at 300° K, contrasts with a strong photosensitivity. The value of the fundamental band gap deduced from spectral dependence of the photocurrent is in rather good agreement with the value 1.61 eV obtained from temperature dependence of the dark conductivity. The Lux-Ampere characteristics can be described by I ∝ L ^α but changes in α with illumination intensity and temperature show that at least two different local centers are involved in the carrier recombination mechanism.     

Concentration quenching of Tb3+ luminescence in LaOBr and Gd2O2S phosphors

The concentration quenching of trivalent terbium ${}^5\text{D}{}_{\mathrm{3,4}}\text{→}{}^7\text{F}{}_{\mathrm{J}}$ emissions from UV-excited (La, Tb) OBr and (Gd, Tb)₂O₂S phosphors was studied. The activation concentration x was varied from 5·10^?5 to 0.2 for (La_1?xTb_x) OBr and from 10^?3 to 0.1 for (Gd_1?xTb_x)₂O₂S. ${}^5\text{D}{}_3\text{→}{}^7\text{F}{}_{\mathrm{J}}$ emissions (blue) were observed to quench first and the Tb³⁺ concentration giving rise to maximum intensity was 0.003 in (La, Tb) OBr and between 0.005 and 0.01 in (Gd, Tb)₂O₂S. The optimum concentration for ${}^5\text{D}{}_4\text{→}{}^7\text{F}{}_{\mathrm{J}}$ (green) emissions was 0.05 in (La, Tb) OBr and 0.03 in (Gd, Tb)₂O₂S. Dipole-dipole and dipole-quadrupole interactions are possible mechanisms for the quenching of emissions from the ⁵D₃ and ⁵D₄ levels.A method for determining the Tb³⁺ concentration in these phosphors, based on the intensity ratios of the ${}^5\text{D}{}_3\text{→}{}^7\text{F}{}_{\mathrm{J}}$ and ${}^5\text{D}{}_4\text{→}{}^7\text{F}{}_{\mathrm{J}}$ transitions, is also presented.     

Contribution a l'etude de la conductivite ionique de l'orthophosphate Na3PO4

The present work is concerned with the ionic conductivity of pure trisodium orthophosphate Na₃PO₄, devoid of any trace of hydroxide NaOH. At the allotropic transition (330°C), we observe a jump of the ionic conductivity and a slight decrease in the activation energy (ΔE = 0,70 ± 0,02 eV for the quadratic variety and ΔE = 0,60 ± 0,04 eV for cubic γ-Na₃PO₄). Na₃PO₄ can be considered to be an electrolytic solid with medium conductivity ($\text{σ = 1.10}{}^{\mathrm{?4}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$ at 370°C).     

A thin film electrochromic display based on the tungsten bronzes

The main features of a passive thin film display cell based on the electrochemically reversible formation of a tungsten bronze according to the reaction

$\text{(colourless) WO}{}_3\text{+ x}\text{M}{}^{\mathrm{+}}\text{+ x}\text{e}{}^{\mathrm{?}}\text{?}\text{M}{}_{\mathrm{x}}\text{WO}{}_3\text{(blue)}$

where 0 < x < 1 are considered. Chemical analysis of an electrochemically coloured WO₃ film has confirmed the presence of M. It is shown that a critical requirement of these cells is that D_τ(qC_m/Q)² ≈ 1, where the symbols are, in order, the M⁺ diffusion coefficient, the required device response time, the electronic charge, the maximum practical volume concentration of M in the WO₃ film and lastly the area colouring charge. Typical energy requirements might be about 10 mJ cm^?2 per complete cycle in a favourable case.Ionic injection overpotentials and ionic diffusion both appear to play a significant role in determining cell currents. Preliminary diffusion coefficient results for Li⁺ in r.f. sputtered WO₃ films are reported, and their predicted dependence of film structure is discussed. The optical absorption of coloured WO₃ films is presented, and it is interpreted as being predominantly due to free-electron intraband transitions.     

Synthesis and crystal structure of the inter-alkali-metal chloride RbLiCl2

The crystal structure of RbLiCl₂ [a= 1441.3(3), b= 412.57(8), c= 720.9(1) pm, Guinier-Simon data, orthorhombic, Ccmm, No. 63, Z= 4] was determined and refined from single crystal data, R= 0.074, R_W= 0.062. The coordination polyhedron of Rb⁺ is a bicapped trigonal prism, Li⁺ is tetrahedrally coordinated. [LiCl₄] tetrahedra are connected via common corners to undulated layers $\text{∞}\text{2}\text{[}\text{LiCl}{}^{\mathrm{c}}{}_{\mathrm{<mtext>4</mtext><mtext>2</mtext>}}\text{]}{}^{\mathrm{?}}$ parallel to (100). The structure is closely related to that of SrZnO₂.     

Conductivite ionique dans les verres AgPO3-AgX (X = I.Br.Cl)

The glass-forming regions in the systems AgPO₃- AgX with X = I.Br.Cl were determined and the study of the electrical conductivity of glasses belonging to these systems was carried out. The glass-forming region and conductivity increase with increasing halogen ion size. The conductivity reaches maxima values of the order of 10^?2, 10^?3, $\text{10}{}^{\mathrm{?4}}\text{(Ω ·}\text{cm}\text{)}{}^{\mathrm{?1}}$ with AgI, AgBr, AgCl respectively. The study of the electrical conductivity shows that the conduction is essentially ionic in nature and due to silver ions movements only.