Discrete domain wall positioning due to pinning in current driven motion along nanowires

Racetrack memory is a novel storage-class memory device in which a series of domain walls (DWs), representing zeros and ones, are shifted to and fro by current pulses along magnetic nanowires. Here we show, by precise measurements of the DW's position using spin-valve nanowires, that these positions take up discrete values. This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire.     

Nanowire spintronics for storage class memories and logic

Patterned magnetic nanowires are extremely well suited for data storage and logic devices. They offer non-volatile storage, fast switching times, efficient operation and a bistable magnetic configuration that are convenient for representing digital information. Key to this is the high level of control that is possible over the position and behaviour of domain walls (DWs) in magnetic nanowires. Magnetic random access memory based on the propagation of DWs in nanowires has been released commercially, while more dynamic shift register memory and logic circuits have been demonstrated. Here, we discuss the present standing of this technology as well as reviewing some of the basic DW effects that have been observed and the underlying physics of DW motion. We also discuss the future direction of magnetic nanowire technology to look at possible developments, hurdles to overcome and what nanowire devices may appear in the future, both in classical information technology and beyond into quantum computation and biology.     

Interaction of antiparallel transverse domain walls in ferromagnetic nanowires

The interaction of antiparallel transverse domain walls in ferromagnetic nanowires was investigated via micromagnetic simulation with systematic variations of the external field strength as well as the wire thickness. The interaction of antiparallel transverse walls after domain wall collision exhibited damped multiple collisions due to the rigid structure of the antiparallel transverse walls. The detailed process during the multiple collisions was analyzed via the Fast Fourier Transform technique, along with a careful examination of the inner spin structures of the colliding domain walls. It was found that a frequency peak of multiple collisions shifted to a higher peak position as the external field strength increases. With a stronger field strength of around a few hundred mT, it was found that two antiparallel transverse walls were finally annihilated with formation of complex antivortex structures.     

Translational positioning of a magnetic domain wall in ferromagnetic nanowires using a stray field filter

Understanding the interaction between the magnetic domain wall and the various artificial defects in ferromagnetic nanowires has been of utmost importance for the future realization of the spintronic devices based on the magnetic domain wall motion in nanowires. In this work, the chirality filter effect of the magnetic domain wall in T-shaped ferromagnetic nanowires with a stray field filter was investigated via micromagnetic simulation. A tapered wire was attached to the flat nanowires to form a potential barrier or well for the domain wall propagating along them. For the domain wall passing through the potential barrier or the potential well, the spin structure of the domain wall and the interaction between the domain wall and the potential barrier/well were investigated in detail. The chirality-dependent translational positioning of the domain wall was intensively examined for the potential barrier and potential well cases. The domain wall chirality transmission on relatively long length scales using a series of potential wells was explored.     

Switching of ± 360° domain wall states in a nanoring by an azimuthal Oersted field

We demonstrate magnetic switching between two 360° domain wall vortex states in cobalt nanorings, which are candidate magnetic states for robust and low power magnetoresistive random access memory (MRAM) devices. These 360° domain wall (DW) or 'twisted onion' states can have clockwise or counterclockwise circulation, the two states for data storage. Reliable switching between the states is necessary for any realistic device. We accomplish this switching by applying a circular Oersted field created by passing current through a metal atomic force microscope tip placed at the center of the ring. After initializing in an onion state, we rotate the DWs to one side of the ring by passing a current through the center, and can switch between the two twisted states by reversing the current, causing the DWs to split and meet again on the opposite side of the ring. A larger current will annihilate the DWs and create a perfect vortex state in the rings.     

Magneto-elastic interchange in ferromagnetic alloys

The internal friction δ, exchange integral A, magnetocrystalline anisotropic constant K_I and saturation magnetization M_s of Fe–Cr–Al and Fe–Cr–Al–Si alloys annealed at 1373 and 1473 K are measured. The energy density and volume fraction of domain walls (DWs) of these alloys are calculated based on the theories of ferromagnetism and the magnetic parameters measured. The physical process of irreversible movement of 90° DWs is suggested. The results indicate the dissipated elastic energy per unit volume due to the irreversible movements of 90° DWs is equal in value to the energy density of DWs, that is γ_w/δ_w=λ_sE/2. It is an effect of magneto-elastic interchange in ferromagnetic alloys.     

Hole Spin Polarization in Metallic Ferromagnetic GaMnAs Multilayers and Superlattices: Lateral and Bloch Miniband Transport

It is shown that spin-polarized currents occur in metallic and ferromagnetic Ga_1–x Mn _x As/GaAs multilayered structures, as a result of the magnetic interaction between holes and the Mn ions. The magnetic layers act as potential barriers for holes with spins aligned parallel to the layer magnetization, and as potential wells for the inverse spin polarization. In the case of currents in-plane, holes with spin parallel and antiparallel to this magnetization move in different regions. By choosing properly the magnetic and the nonmagnetic layers widths, a spin-polarized transport with a difference of an order of magnitude on the mobilities for each spin polarization is predicted to occur. Spin-polarized minibands are also shown to occur in a superlattice based on the same structure. We calculated the dependence of the spin polarization with the superlattice parameters, and we discuss how this polarization affects the Bloch miniband transport in such ferromagnetic superlattice.     

Oscillatory reduction of domain wall depinning field by transverse magnetic field in ferromagnetic permalloy nanowires

Reported herein is a possible way of controlling the depinning field of magnetic domain walls (DWs) by using a magnetic field H(T) transverse to the nanowire. A typical notch structure-in the form of triangles on both edges of ferromagnetic Permalloy nanowires-is employed to pin the DWs. The depinning field of the DW initially pinned at the notch is then measured with respect to H(T). Interestingly, it is experimentally found that the depinning field is drastically decreased to almost 0 with increasing H(T), due to the internal shift of the DW position at the notch. Moreover, it is experimentally observed that an oscillatory behavior of the depinning field occurs with respect to H(T), Micromagnetic calculation is performed to model the depinning behavior of the DW pinned at the notch structure with respect to H(T). It is ascribed to the natural edge roughness of the nanowire, which means the edge roughness plays an important role in determination of the depinning field.     

Local oxidation using scanning probe microscope for fabricating magnetic nanostructures

Local oxidation technique using atomic force microscope (AFM) was studied. The local oxidation of ferromagnetic metal thin films was successfully performed by AFM under both contact and dynamic force modes. Modification of magnetic and electrical properties of magnetic devices fabricated by the AFM oxidation was achieved. Capped oxide layers deposited on the ferromagnetic metal films are advantageous for stable oxidation due to hydrophilic surface of oxide. The oxide layer is also expected to prevent magnetic devices from degradation by oxidation of ferromagnetic metal. As for modification of magnetic property, the isolated region of CoFe layer formed by nanowires of CoFe-oxide exhibited peculiar characteristic attributed to the isolated magnetization property and pinning of domain wall during magnetization reversal. Temperature dependence of current-voltage characteristic of the planar-type tunnel junction consisting of NiFe/NiFe-oxide/NiFe indicated that the observed current was dominated by intrinsic tunneling current at the oxide barrier.     

Control of Domain Structures in Multiferroic Thin Films through Defect Engineering

Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO₃ thin films. These defects are strongly coupled to the domain structures in the pretemperature‐change portion of the BiFeO₃ film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.     

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10³ S m⁻¹ is observed in certain BiFeO₃ DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications.     

Control of domain wall pinning in ferromagnetic nanowires by magnetic stray fields

We have found that the depinning field of domain walls (DWs) in permalloy (Ni(81)Fe(19)) nanowires can be experimentally controlled by interactions between magnetic stray fields and artificial constrictions. A pinning geometry that consists of a notch and a nanobar is considered, where a DW traveling in the nanowire is pinned by the notch with a nanobar vertical to it. We have found that the direction of magnetization of the nanobar affects the shape and local energy minimum of the potential landscape experienced by the DW; therefore, the pinning strength strongly depends on the interaction of the magnetic stray field from the nanobar with the external pinning force of the notch. The mechanism of this pinning behavior is applied for the instant and flexible control of the pinning strength with respect to various DW motions in DW-mediated magnetic memory devices.     

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FM^L/I/FM^W/I/FM^R, where the magnetization of the middle ferromagnetic metal layer FM^W can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FM^L and right FM^R ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FM^W.     

A new set-up for the observation of magnetic structures in uniaxial materials at temperatures above 4.2K

A polarization microscope, designed especially for the magneto-optical observation of domain structures in ferromagnetic or superconducting thin films as well as bulk samples at low temperatures, is described. With this system, temperature controlled domain observations in the temperature range 4.3 K < T < 40 K and magnetic fields up to 0.8 T can be performed with an optical resolution of 2 μm. The imaging of the intermediate state in type—I superconductors, of phase boundaries between the Meissner- and Shubnikov-phase in type—II superconductors and of magnetic domains structures in uniaxial ferromagnetic materials is demonstrated.     

Magnetic field mediated nanowire alignment in liquids for nanocomposite synthesis

The motion of magnetic nanowires can be manipulated by a magnetic field in liquids so that their distribution, alignment and orientation can be effectively controlled. The small dimensions of nanoscale entities result in an extremely low Reynolds number, and a steady state Stokes flow approximation was adopted to analyze the nanowire motion under the influences of applied field. The effects of fluid viscosity and external field on the motion of different sized nanowires were investigated. Polydimethylsiloxane composites with nickel nanowires as reinforcing fillers were synthesized as a demonstration of the effectiveness of magnetic alignment. Anisotropic magnetic properties and mechanical strengthening effects were explored.     

Probing the local coordination environment for transition metal dopants in zinc oxide nanowires

It is hypothesized that a highly ordered, relatively defect-free dilute magnetic semiconductor system should act as a weak ferromagnet. Transition-metal-doped ZnO nanowires, being single crystalline, single domain, and single phase, are used here as a model system for probing the local dopant coordination environments using X-ray absorption spectroscopy and diffraction. Our X-ray spectroscopic data clearly show that the dopant resides in a uniform environment, and that the doping does not induce a large degree of disorder in the nanowires. This homogeneous nature of the doping inside the oxide matrix correlates well with observed weakly ferromagnetic behavior of the nanowires.     

Spin Effects on Heat Current Through a Quantum Dot Attached to Ferromagnetic Leads

A heat current originating from electron–phonon coupling in a quantum dot (QD) molecule connected to ferromagnetic leads is studied by the non-equilibrium Green’s function technique. The system is driven out of equilibrium by a temperature gradient (thermal bias) applied across the two terminals of the structure. We find that when the magnetic moments of the two leads are arranged in parallel configuration, the heat current is not sensitive to the leads’ ferromagnetism, whereas in the case of antiparallel configuration, the magnitude of the heat current increases with increasing spin polarization of the leads, with the reduction of the electric current’s intensity. We also find that the ferromagnetism on the leads can amplify the heat rectification effect occurring for some particular dot levels, i.e., the strength of the heat flowing between the QD and the phonon bath can be very small for one direction of the temperature gradient, while it becomes quite large when the corresponding direction of the temperature gradient is reversed.     

The influence of moving domain walls on the appearance of the second harmonic in the magnetoimpedance spectrum of a cobalt-based amorphous microwire

We have studied the influence of moving domain walls (DWs) on the magnetoimpedance of a cobalt-based amorphous microwire. A model describing the DW motion in the electric field of an alternating current in the absence of a skin effect is proposed. When the current amplitude exceeds a certain threshold value, the DW motion leads to the appearance of a second harmonic component in the frequency spectrum of the sample response voltage. The second harmonic amplitude has been studied as a function of the external longitudinal magnetic field, the current frequency, and the angle of deviation of the microwire anisotropy axis from the circular direction. The sensitivity of the second harmonic to the external magnetic field can be significantly higher than that of the first harmonic.     

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

We study spin-polarized electron transport through a quantum dot coupled to one normal metal lead and one ferromagnetic lead. Both the intradot Coulomb correlation and the electron-phonon interaction are taken into account in the framework of nonequilibrium Green’s function theory. We find that due to the interplay of the Coulomb blockade effect and the phonon-induced extra electron transport channels, the spin polarization of the electron current driven by external bias voltage is enhanced in a range of negative biases in which the current is flowing from the ferromagnetic lead to the normal metal one. While for the corresponding positive biases, the current polarization is suppressed to negative values where the current is flowing from the normal metal lead to the ferromagnetic one. The device thus operates as a current polarization switcher without the need of a magnetic field or spin-orbit interaction, and may find use in low-power spintronic devices with the help of phonon engineering techniques.     

Domain wall motion in synthetic Co2Si nanowires

We report the synthesis of single crystalline Co(2)Si nanowires and the electrical transport studies of single Co(2)Si nanowire devices at low temperature. The butterfly shaped magnetoresistance shows interesting ferromagnetic features, including negative magnetoresistance, hysteretic switch fields, and stepwise drops in magnetoresistance. The nonsmooth stepwise magnetoresistance response is attributed to magnetic domain wall pinning and depinning motion in the Co(2)Si nanowires probably at crystal or morphology defects. The temperature dependence of the domain wall depinning field is observed and described by a model based on thermally assisted domain wall depinning over a single energy barrier.