共查询到20条相似文献,搜索用时 31 毫秒
1.
Byung-Gwon Cho Heung-Sik Tae Ito K. Nam-Sung Jung Kwang-Sik Lee 《Electron Devices, IEEE Transactions on》2006,53(5):1112-1119
A new cost-effective driving method that can drive plasma-display panel cells without applying any driving waveform to the common electrode is proposed based on a V/sub t/ close-curve analysis. In this driving method, it is very important to prevent a misfiring discharge due to the inversion of the polarity of the wall charges accumulated between the scan and address electrodes. The measured V/sub t/ close-curve showed that a misfiring discharge caused by the polarity inversion phenomenon of the wall charges on the scan and address electrode could be prevented by minimizing the potential difference between the scan and address electrodes by applying a positive auxiliary pulse to the address electrode, especially while applying the positive sustain pulse during a sustain period. As a result, the proposed cost-effective driving method can reduce the driving cost by about 20% through eliminating the common driving board and successfully display various image patterns, such as the white, red, green, and blue patterns, on a 42-in plasma television without any misfiring discharge. 相似文献
2.
Byung-Gwon Cho Heung-Sik Tae 《Electron Devices, IEEE Transactions on》2005,52(11):2357-2364
A new reset while-address (RWA) driving scheme for a single scan of an XGA grade (1024 /spl times/ 768) ac-plasma display panel (PDP) is proposed to improve the address discharge characteristics with a high Xe gas mixture (15%). To solve the conventional address problem of the gradual decrease in priming particles during an address period, the falling ramp waveform in the reset period is separated into two parts; the first part is applied at the beginning of the reset period and provides the priming particles during the first half of the address period, while the second part is applied in the middle of the address period to provide an additional supply of priming particles during the second half of the address period. As a result of adopting the proposed RWA driving scheme, address discharges were successfully produced within a 1.0-/spl mu/s pulsewidth due to the presence of priming particles throughout the address period. 相似文献
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Improvement of address discharge characteristics using asymmetric variable-width scan waveform in ac plasma display panel 总被引:1,自引:0,他引:1
Byung-Gwon Cho Heung-Sik Tae Sung-Il Chien 《Electron Devices, IEEE Transactions on》2003,50(8):1758-1765
A new asymmetric variable-width scan waveform is proposed to improve the characteristics of an address discharge, including a reduced address time and increased dynamic voltage margin, based on the formative and statistical time lags of an address discharge in an ac-plasma display panel (ac-PDP). The new asymmetric variable-width scan waveform has a progressively increasing scan pulsewidth that is wider than the address pulsewidth, thereby enabling stable wall charge accumulation under short address pulsewidth conditions. When adopting this new scan waveform, the address pulsewidth was reduced from 3.0 to 1.4 /spl mu/s and the address voltage lowered from 65 to 55 V without any misfiring problem at an address pulsewidth of 1.4 /spl mu/s. 相似文献
5.
《Electron Devices, IEEE Transactions on》2008,55(12):3389-3395
6.
Gun-Su Kim Hoon-Young Choi Jun-Hyoung Kim Seok-Hyun Lee 《Electron Devices, IEEE Transactions on》2003,50(7):1705-1707
We propose a new reset waveform for the improvement of contrast ratio. A square pulse is applied to the address electrode while the reset pulse ramps and before the discharge between the sustain electrodes occurs. The square pulse induces a discharge between the address electrode and the X electrode, and the induced wall charge between the sustain electrodes is opposite to the applied ramping voltage between the sustain electrodes. Thus, the next discharge between the sustain electrodes becomes weaker. The weaker discharge during the reset period lowers background luminance and improves contrast ratio. The experimental results show that the contrast ratio can be improved by 35/spl sim/58% using this method compared with the conventional ramp reset method. 相似文献
7.
Kyung Cheol Choi Cheol Jang Jin Bhum Yun 《Electron Devices, IEEE Transactions on》2008,55(6):1338-1344
A new driving waveform was proposed in order to stabilize the driving characteristics of a high-efficacy AC plasma-display panel (PDP) with a coplanar gap of 200 mum and an auxiliary electrode. To stabilize the reset and address discharge, an erase pulse was applied to the auxiliary electrode instead of the sustain electrode after the sustain period. The write pulse was applied to the scan electrode, and a reset discharge was induced between the scan and auxiliary electrodes. As a result, the minimum address voltage could be reduced to a level similar to that achieved with a conventional ac PDP with a coplanar gap of 80 mum. Furthermore, the address-discharge time lag of the ac PDP with a coplanar gap of 200 mum was improved to a level that is comparable with that of the ac PDP with a coplanar gap of 80 mum. 相似文献
8.
Bhum Jae Shin 《Electron Devices, IEEE Transactions on》2006,53(7):1539-1542
The characteristics of an address discharge have been investigated in terms of a wall voltage, which plays an important role in achieving a high-speed address discharge in an ac plasma display panel. The wall-voltage conditions generated in a reset period are a considerable factor to reduce the address-discharge time lag. Based on the experimental results, the reset driving scheme in which an address bias voltage is applied to the address electrode in a reset period is proposed to enhance the characteristics of an address-discharge time lag. 相似文献
9.
《Solid-State Circuits, IEEE Journal of》1983,18(5):520-524
This paper reports a GaAs 1K static RAM, fabricated using tungsten silicide gate self-aligned technology with full ion implantation. With 2-/spl mu/m gate length, an address access time of 3.6 ns and a minimum write-enable pulse width of 1.6 ns were achieved with a power dissipation of 68 mW. The access time compares favorably to those of currently reported high-speed Si bipolar memories, and the greatly decreased power dissipation is better by one order of magnitude. An address access time of 0.88 ns can be achieved by shortening the gate length to 1 /spl mu/m and adopting a 2-/spl mu/m design rule in the layout. 相似文献
10.
《Electron Devices, IEEE Transactions on》2008,55(12):3407-3413
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A new plasma display panel driving method was proposed to reduce the address period. The scan time of the address method using overlapping scan time overlaps with the next scan time during the formative lag time of the discharge. Thus, without reducing the address pulsewidth and the scan pulsewidth, the driving method can reduce the address period. We could overlap the scan time of about 100 /spl sim/300 ns. However, the driving method has a narrow address voltage margin compared with a conventional method. In order to improve the address voltage margin of the driving method, the scan direction is set to the opposite direction compared with the conventional direction. As shown in experimental results, the address voltage margin of the new driving method is increased by 7/spl sim/10 V when the opposite scan direction is used. 相似文献
12.
Joong Kyun Kim Jin Ho Yang Woo Joon Chung Ki Woong Whang 《Electron Devices, IEEE Transactions on》2001,48(8):1556-1563
The characteristics of the address discharge of an alternating current plasma display panel (ac PDP) adopting a ramping reset pulse were studied using two-dimensional (2-D) numerical simulation. We investigated the principal parameters of the reset pulse for a successful address discharge. In this paper, we suggest a new parameter, the terminal voltage of the ramping reset pulse, and its effects on the minimum address voltage and current flow characteristics during the address discharge. The minimum addressing voltage decreased with increase in the ramping-down time and with increase in the terminal voltage of the ramping reset pulse, which were explained with the wall charge characteristics obtained by a 2-D simulation and confirmed through an ac PDP experiment 相似文献
13.
Chung-Hoo Park Sung-Hyun Lee Dong-Hyun Kim Jae-Hwa Ryu Ho-Jun Lee 《Electron Devices, IEEE Transactions on》2002,49(7):1143-1150
A high dark room contrast ratio is necessary for realizing good image quality in ac plasma display panels (PDP). However, the conventional PDPs have low dark room contrast ratio because the background light mainly results from the reset discharges between the address, scan, and sustain electrodes in every subfield. In this study, a new driving method [improved waveform of contrast ratio (ICR)] is suggested to enhance the dark room contrast ratio. The principle of ICR is that the facing discharges during the reset period occur between the scan and address electrodes instead of surface discharges by applying almost the same voltage waveform as the scan voltage to the sustain electrode after the conventional first subfield. Moreover, the reset discharge occurs only for the cells that experienced sustain discharge in the preceding subfield after the first subfield. The dark room contrast ratio of ICR is improved more than 7× as compared to the conventional method 相似文献
14.
《Solid-State Circuits, IEEE Journal of》1986,21(5):675-680
A 3.5-ns emitter-coupled logic (ECL) 16-kbit bipolar RAM with a power dissipation of 2 W, a cell size of 495 /spl mu/m/SUP 2/, and a chip size of 20 mm/SUP 2/ has been developed. High performance is achieved using a high-speed Schottky barrier diode decoder with a pull-up circuit and a double-stage discharge circuit for a word-line driver. Small cell size is obtained using ultra-thin Ta/SUB 2/O/SUB 5/ film capacitors and 1-/spl mu/m U-groove isolation technology. An access time of 3.5 ns in this 16-kb bipolar RAM is equivalent to an effective access time of 2.5 ns at the system level, due to an on-chip address buffer and latch. 相似文献
15.
提出了一种适合三电极荫罩式PDP结构的新型高效复合放电驱动波形.采用二维流体模型研究了三电极荫罩式PDP结构复合放电驱动波形的放电过程,分析了空间电位、壁电荷及带电粒子分布的演变情况.讨论了复合放电驱动波形维持期寻址电极电压对放电特性的影响,计算了维持期真空紫外辐射功耗、放电效率的变化趋势以及电子平均浓度随时间的变化关系,并与传统表面放电驱动波形比较.结果表明复合放电驱动波形在响应频率、放电强度和放电效率等方面均优于传统表面放电驱动波形. 相似文献
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《Solid-State Circuits, IEEE Journal of》1986,21(4):501-504
A 1-kb ECL RAM with an address access time of 0.85 ns is described. This excellent performance is achieved by combining super self-aligned technology (SST) with 1-/spl mu/m design rules and high-speed circuit design. SST provides a narrow emitter stripe width of 0.5 /spl mu/m and a high cutoff frequency of 12.4 GHz at V/SUB CE/=3 V. A two-level metallization process is used. The minimum metallization pitches are 3 /spl mu/m in the first layer and 6 /spl mu/m in the second one. The chip size is 2.5/spl times/2.5 mm/SUP 2/ and the power dissipation is 950 mW. This RAM is promising for use in super computers and/or high-speed digital systems. 相似文献
18.
《Solid-State Circuits, IEEE Journal of》1984,19(5):646-650
A high-performance 1-Mb EPROM has been developed by utilizing advanced 1.2-/spl mu/m minimum design rule technology. The device technology used is n-channel E/D MOS. The memory cell size is 5.5/spl times/7.5 /spl mu/m and the die size is 9.4/spl times/7.2 mm. The word organization is changeable between 64K words/spl times/16 bits and 128K words/spl times/8 bits. The active power dissipation is 500 mW and the standby power dissipation is 150 mW. The access time is typically 200 ns. The programming voltage is 12-14 V and the programming pulse width is typically 1 ms/word. In order to realize such a high-density, high-speed, low power 1-Mb EPROM, 1.2-/spl mu/m minimum patterning process technology, a high-speed sense amplifier, and a high-speed decoder are used. 相似文献
19.
DeBrosse J. Gogl D. Bette A. Hoenigschmid H. Robertazzi R. Arndt C. Braun D. Casarotto D. Havreluk R. Lammers S. Obermaier W. Reohr W.R. Viehmann H. Gallagher W.J. Muller G. 《Solid-State Circuits, IEEE Journal of》2004,39(4):678-683
A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transistor/one-magnetic tunnel junction (1T1MTJ) cell and features a symmetrical high-speed sensing architecture using complementary reference cells and configurable load devices. Extrapolations from test chip measurements and circuit assessments predict a 5-ns random array read access time and random write operations with <5-ns write pulse width. 相似文献
20.
Bhum Jae Shin Kyung Cheol Choi Jeong Hyun Seo 《Electron Devices, IEEE Transactions on》2005,52(1):17-22
The basic characteristics of reset discharges related to a wall voltage and a priming effect were investigated under a conventional ramp driving scheme. The reset discharges could be minimized by controlling the wall voltage which is determined by pre-reset conditions. Accordingly, the current study presents a simple pre-reset condition for minimizing the reset discharge. Essentially, it is not only to reduce the duration of reset discharges but also to reduce the intensity of light emissions when the wall voltage polarity is opposite to the external voltage polarity. 相似文献