共查询到19条相似文献,搜索用时 156 毫秒
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薄膜锂电池具有良好的集成兼容性和优异的电化学性能,成为微电子机械系统(MEMS)和超大规模集成电路(VLSI)能源微型化、集成化的最佳选择电源.介绍了薄膜锂电池的结构特征和应用前景,重点分析了国内外研究现状、发展趋势和关键技术,并对开展该项技术研究提出了建议和展望. 相似文献
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薄膜锂电池的研究进展 总被引:4,自引:0,他引:4
微电子机械系统(MEMS)和超大规模集成电路(VLSI)技术的发展对能源的微型化、集成化提出了越来越高的要求。全固态薄膜锂电池因其良好的集成兼容性和电化学性能成为MEMS和VLSI能源微型化、集成化的最佳选择。简单介绍了薄膜锂电池的构造,举例说明了薄膜锂电池的工作原理。从阴极膜、固体电解质膜、阳极膜三个方面概述了近年来薄膜锂电池关键材料的研究进展。阴极膜方面LiCoO2依旧是研究的热点,此外对LiNiO2、LiMn2O4、LiNixCo1-xO2、V2O5也有较多的研究;固体电解质膜方面以对LiPON膜的研究为主;阳极膜方面以对锂金属替代物的研究为主,比如锡的氮化物、氧化物以及非晶硅膜,研究多集中在循环效能的提高。在薄膜锂电池结构方面,三维结构将是今后研究的一个重要方向。 相似文献
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本文结合射频微电子机械系统(MEMS)的特点,功分器、共面波导、电极结构三方面进行结构、材料的合理设计与优化处理,并基于此通过微波性能仿真实验,证实了K型功分器以及各项参数优化后的射频MEMS单刀四掷开关在0.1-20GHz范围内均有着较好的微波性能。 相似文献
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针对稳瞄惯导一体化系统中,旋转炮塔相对底盘转角的测量问题,解决目前炮塔转角的动态、高精度、实时性测量存在的不足和限制。文中在刚体姿态动力学、姿态测量技术理论基础上,提出基于微电子机械系统(micro-electromechanical systems,MEMS)陀螺、加速度计和磁传感器构建的转角测量系统,设计了基于四元数的姿态估计滤波器。对测量装置进行试验和标定,结果表明:其在坦克内部复杂的环境中,能有效抑制陀螺的随机漂移,满足技术要求,测量精度达80″. 相似文献
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用于液体介质中局放声测的非本征光纤法珀传感器 总被引:1,自引:0,他引:1
用膜片与光纤尾纤端面构成非本征光纤法珀传感器,测量液体介质中局部放电产生的声波,所组成系统具有全介质结构和抗电磁干扰能力。采用尾纤分别与石英膜和微电子机械系统(micro electronic mechanical systems,MEMS)工艺获得硅膜制成传感器,根据理论分析和计算机仿真结果建立确定传感器参数的方法。应用压电超声传感器与两种膜片的光纤传感器共同测量局放产生的声发射信号。实验结果表明,硅膜结构的非本征光纤法珀传感器最小可测放电量达到了150 pC,实验同时验证了法珀腔长工作点对测量灵敏度的影响。 相似文献
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A. E. Wickenden L. J. Currano T. Takacs J. Pulskamp M. Dubey S. Hullavarad 《Integrated ferroelectrics》2013,141(1):565-574
Piezoelectric AlN micro- and nanoelectromechanical systems (MEMS, NEMS) resonator devices are being developed for RF filter applications. Composite structures which include the piezoelectric actuating film, metal electrode layers, and a flexural layer are required for these devices. The crystalline quality of the AlN film is strongly dependant on the growth technique used, and may significantly impact the piezoelectric response. We have fabricated MEMS resonator devices using sputtered and pulsed laser deposited (PLD) AlN thin films. Highly oriented ?0001? PLD AlN films have been deposited on platinum-terminated composite MEMS structures. Devices made using PLD films have been observed to result in significantly greater displacement, lower actuation voltage, and higher device Q than equivalent devices made with sputtered AlN films that are less crystalline and may have different stoichiometry. AlN thin film deposition, device fabrication, and modeshape analysis of resultant MEMS resonator devices are discussed for sputtered and PLD AlN films. 相似文献
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Il Woong Jung Mallick S.B. Solgaard O. 《IEEE journal of selected topics in quantum electronics》2009,15(5):1447-1454
In this paper, we introduce a single-axis resonant combdrive microelectromechanical systems (MEMS) scanner with a large-area highly reflective broadband monolithic single-crystal-silicon (SCS) photonic crystal (PC) mirror. PC mirrors can be made from a single monolithic piece of silicon through alternate steps of etching and oxidation. This process allows the fabrication of a stress-free PC reflector in SCS with better optical flatness than deposited films such as polysilicon slabs on low-index oxide. PC mirrors can be made in IR transparent dielectric material and can achieve high reflectivity over a broad wavelength range. PC reflectors have several advantages over other mirror technologies. They can tolerate much higher processing temperatures and higher incident optical powers as well as operate in more corrosive environments than metals. Compared to multilayer dielectric stacks, PC mirrors allow for simpler process integration, thus making them highly compatible with CMOS and MEMS processing. In this paper, we fabricate a PC mirror MEMS scanner in SCS without any deposited films. Our PC mirrors show broadband high reflectivity in the wavelength range from 1550 to 1600 nm, and very low angular and polarization dependence over this same range. The single-axis MEMS scanners are fabricated on silicon-on-insulator (SOI) wafers with the PC mirrors also fabricated in the SOI device layer. The scanners are actuated by electrostatic comb drives on resonance. Dynamic deflection measurements show that the scanners achieve 22deg total scan angle with an input square wave of 67 V and have a resonance frequency of 2.13 kHz. 相似文献
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The patterning of ceramic thin films is of great interest for use in MEMS and other applications. However, the complex chemistries of certain materials make the use of traditional photolithography techniques prohibitive. In this paper, a number of low-cost, high throughput techniques for the patterning of ceramic thin films derived from chemical solution precursors, such as sol-gels and ceramic slurries, are presented. A particular emphasis is placed on methods that are derived from soft lithographic methods using elastomer molds. Two categories of techniques are discussed: first, the focus is on methods that rely on the principles of confinement within the physical features of the mold to define the pattern on the substrate surface. Then, subtractive patterning techniques that rely on transferring a pattern to a spin-cast, large-area continuous thin film are described. While most techniques have been demonstrated with fidelities on the order of 100 nm, their inability to precisely register and align the patterns as part of a hierarchical fabrication scheme have thus far hindered their commercial implementation. 相似文献
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MEMS (Micro-Electro-Mechanical Systems) technology has already taken root firmly in today's world. It is destined to become a hallmark 21st century manufacturing technology with numerous and diverse applications. MEMS will have a dramatic impact or everything from aerospace technology to biotechnology. As a breakthrough technology allowing unparalleled synergy between apparently unrelated fields of endeavour such as biology and microelectronics, MEMS is forecasted to have a commercial and defense market growth similar to its parent IC technology. The author presents a brief overview of this breakthrough technology, looking at the design, fabrication process, packaging, testing and applications 相似文献
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制备条件对Fe-Ta-N薄膜的结构和软磁性能的影响 总被引:1,自引:0,他引:1
应用射频磁控溅射法制备了Fe-Ta-N薄膜,系统地研究了制备工艺地Fe-Ta-N薄膜结构和软磁性能的影响,首先,制备了不同钽含量的薄膜,发现(Fe89.5Ta10.5)-N薄膜具有很好的软磁性能,氮分压P(N2)=5%时,矫顽力获得最小值,Hc=14A/m。此时,样品呈现纳米晶结构,晶粒尺寸D≤10∧-8m,并且,钽掺杂能抑制铁氮化合物的生成,使薄膜在高氮分压范围内具有高的饱和磁化强度,Ms=1242kA/m。其次,考察了热处理对(F89.5Ta10.5)-N薄膜结构和磁性能的影响,P(N2)=5%时,沉积态薄膜为非晶结构,矫顽力很大;在热处理过程中,薄膜逐渐晶化,400℃热处理后,晶化度达到40%,形成纳米晶结构,矫顽力迅速减小,最后,比较了不同溅射功率和总气压对(Fe89.5Ta10.5)-N薄膜结构和磁性能的影响,发现薄膜可在较大的溅射功率和总气压范围内保持优异的软磁性能,是非常适于工业生产的薄膜磁头材料。 相似文献
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为了研究磁场溅射和磁场退火对材料磁性能的影响,用磁控溅射制备了几组CeFe薄膜,分别为衬底不加磁场的样品(No)和溅射时衬底加磁场的样品(FS),No和FS样品在外部磁场作用下分别在260℃、360℃热退火处理得到的样品。通过比较磁滞回线和高频磁谱,发现No样品磁退火之后各项性能几乎没变化。而磁场溅射的样品矫顽力更大,面内单轴各向异性场也更大,共振频率变化不大。磁场溅射之后再磁场退火显著地降低了CeFe薄膜的矫顽力,增大饱和磁化强度,增高共振频率。因此最有效的方法是同时利用磁场溅射和磁场退火来提高CeFe薄膜的软磁特性和高频截止频率。 相似文献
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微机电系统(MEMS)的动态表征是为可动MEMS器件的设计和加工过程提供可靠的实验数据反馈.文中构建了一个MEMS动态测试系统,它采用了光学检测方法,具有非接触、快速、高精度等优点.系统分别采用光流技术和显微干涉技术,结合频闪照明的方法,对MEMS器件的面内和离面运动特性进行了测量.通过对一个微加工水平谐振器的运动特性测量实验说明了系统具有的功能. 相似文献