Lightwave systems with optical amplifiers

Fiber-optic communication systems using semiconductor laser amplifiers are investigated theoretically and experimentally. The noise and bit-error-rate characteristics of lightwave systems with optical amplifiers are calculated and the dependence of system performance on amplifier characteristics such as optical bandwidth, noise figure, gain, etc., is shown. Experimental results for both a 4-Gb/s optical preamplifier as well as coherent and direct detection systems with four inline amplifiers are presented     

Semiconductor laser optical amplifiers for multichannel coherentoptical transmission

The application of semiconductor laser optical amplifiers in multichannel coherent optical transmission systems is investigated. The amplifiers considered (λ=1.3 μm) exhibit a gain of 24 dB at a grain ripple <2 dB and a 3-dB bandwidth of about 4000 GHz. The characteristics of these amplifiers and transmission experiments with these amplifiers are described. The investigations concern noise accumulation in an amplifier chain, generation of echoes due to backward gain in cascaded amplifiers, crosstalk in multichannel transmission, and the effect of gain saturation due to spontaneous emission. A good fit is shown between the advantages of multichannel coherent optical transmission systems and the properties of semiconductor laser optical amplifiers, which are very promising for future long-haul optical transmission systems     

Noise characteristics of nonlinear semiconductor optical amplifiersin the Gaussian limit

This paper addresses noise properties of nonlinear semiconductor optical amplifiers. From a basic point of view, noise properties of nonlinear optical amplifiers are sufficiently different from those of linear amplifiers to warrant detailed modeling which has not been formulated previously. From a practical point of view, nonlinear semiconductor optical amplifiers are important for future all-optical signal-processing applications which may involve the operation of these devices in a saturated regime. Nonlinear amplifiers are also common in systems operating near 1300 nm and in integrated booster amplifiers. Under nonlinear operating conditions, amplifier noise contains a narrow-band contribution that comes about due to the nonlinear coupling of noise and gain. The more conventional broadband spontaneous noise also changes as the inversion factor becomes power-dependent and varies along the amplifier axis. We analyze noise in nonlinear amplifiers in the Gaussian limit (meaning, for fields consisting of large photon numbers) for CW or NRZ modulated signals and separately for short pulses. We consider the case of a single input as well as configurations of multi-input signals interacting via four-wave mixing. Using a specific detection system for the calculations of electronic signal-to-noise ratios, we demonstrate a reduction in the narrow-band electronic noise due to saturation in the single input case. We also demonstrate a vast advantage of using short pulses in four-wave-mixing applications     

1.5 µm GaInAsP traveling-wave semiconductor laser amplifier

This paper presents a theoretical and experimental study in terms of small-signal gain, signal gain saturation, and noise characteristics of a 1.5 μm GaInAsP traveling-wave amplifier (TWA), realized through the application of SiOxfilm antireflection coatings. This TWA, having a residual facet reflectivity of 0.04 percent, exhibits a wide, flat signal gain spectrum and a saturation output power of +7 dBm at a 20 dB signal gain. The TWA also has a noise figure of 5.2 dB, which is the smallest value reported for semiconductor laser amplifiers. The experimental results are confirmed to be in good agreement with the theoretical predictions based on the multimode traveling-wave rate equations in conjunction with the photon statistic master equation analysis, which takes into account the amplifier material and device structural parameters. Signal gain undulation, saturation output power, and noise figure are also theoretically evaluated as functions of the facet reflectivity. The superior performance of the TWA demonstrates that the device is favorable for use in linear optical repeaters in fiber transmission systems.     

Semiconductor laser optical amplifiers for use in future fibersystems

The application of semiconductor laser amplifiers to long-wavelength optical fiber systems is discussed. The basic equations defining laser amplifier characteristics are presented together with experimental results. Linear and nonlinear modes of operation are considered; the former includes use as an optical gain block, a linear repeater, and a preamplifier, while the latter includes use as a bistable element, an electrically controlled optical switch, and an injection-locked amplifier     

用于光纤传输系统的半导体激光放大器

本文主要介绍用于光纤传输系统的行波半导体激光放大器(TWSLA)。首先描述 TWSLA 的激光器刻面抗反射(AR)涂层的特性,然后描述半导体激光放大器(SLA)的重要特性,如小信号增益、信号增益饱和及噪声特性,最后讨论了 TWSLA 的结构设计。     

Effects of multiple wave mixing and gain saturation in an idealtraveling wave semiconductor laser amplifier

Nonlinear distortions induced by four-wave mixing and gain saturation in a semiconductor laser amplifier can affect the overall performance of lightwave systems using such devices. A model which includes both types of distortion in a three-channel optical transmission system is presented. Large-signal analysis is used to calculate distortion in amplifiers operating near saturation. The technique provides more realistic predictions than the small-signal rate equation analysis used in previous theoretical studies of four-wave mixing in optical amplifiers     

Optical fibers and amplifiers for WDM systems

The development of optical-fiber amplifiers allowed a dramatic increase in the capacity of optical transmission systems while reducing system costs. Capacity increases are possible because the high output powers afforded by optical-fiber amplifiers support higher bit rates, while their broad bandwidth and slow gain dynamics allow multichannel operation. This benefit comes at the expense of having to manage signal-to-noise ratio degradations due to the accumulation of amplifier noise and dispersion distortions accumulated over the total system link. Furthermore, nonlinear optical effects become significant with the use of high power signals over long lengths of fiber, causing cross talk among the different channels and increasing signal distortions. To fully exploit the potential capacity of wavelength division multiplexing systems, the optical characteristics of the fibers and optical-fiber amplifiers must be optimized. The optical amplifiers should have low noise and flat gain, which can be achieved by using 980-nm pump lasers, optimized fiber glass composition, and gain-flattening filters. The optical fibers should have a small nonzero dispersion and large effective area. Both features can be achieved by optimizing the fiber index profile. This paper summarizes the state of the art in these components and points to directions for future exploration     

Noise and error rate performance of semiconductor laser amplifiers in PCM-IM optical transmission systems

Applications of semiconductor laser amplifiers in intensity modulated digital optical transmission systems were studied theoretically. An optical linear amplifier repeater between electronically regenerating terminal repeaters and an optical linear preamplifier in front of a photodetector in an electronically regenerating repeater are discussed. Both traveling-wave type and Fabry-Perot cavity type laser amplifiers are considered. The noise and error rate performance in these systems are evaluated using formulations for semiconductor laser amplifiers. The mean and variance in the optical amplifier output photons calculated by the photon master equation [1] is used to obtain the worst case variance in the equalized output voltage [2] for these systems. The required receiving power reduction from direct detection scheme by a preamplifier system and the repeater spacing expansion between two electronically regenerating terminals by an optical linear amplifier repeater system are delineated.     

Performance predictions for vertical-cavity semiconductor laseramplifiers

Vertical-cavity surface-emitting laser structures are studied theoretically to examine their potential for optical amplification. The major advantages of such a device are the minimal insertion loss and the polarization insensitivity of the gain which the transverse geometry provides. Although single-pass gain is necessarily low owing to a short optical cavity, operation as a Fabry-Perot amplifier in either the reflection or transmission mode ran provide high-performance characteristics. A comparison between edge- and surface-emitting amplifiers shows where advantageous operation can be obtained, and suggests how the best use of the surface-emitting amplifier performance can be made. By considering contrasting device dimensions, we show that gain, saturation output power, and noise characteristics suitable for both fiber optic and array processing configurations are readily attainable     

Recent progress in semiconductor laser amplifiers

Recent progress in semiconductor laser amplifiers (SLAs), mainly GaInAsP traveling-wave semiconductor laser amplifiers (TWAs) for use in optical fiber transmission systems, is discussed. The status of antireflection coating on laser-diode facets which are indispensable for TWAs is discussed. Reported data on small-signal gain, signal-gain saturation, and noise are summarized and discussed in relation to active-layer parameters. Common amplification using SLAs for the amplification of various multiplexed signals, including interchannel crosstalk, is also described. A thick, short active-layer structure for a broadband high-output-power low-noise TWA with polarization-insensitive signal gain is proposed     

Traveling wave semiconductor laser amplifier detectors

Near-traveling-wave semiconductor laser amplifiers for amplification and detection of optical signals are discussed. Measurements of gain, responsivity, and bandwidth are presented and compared with theory. The system performance of the laser amplifier detector is evaluated by a digital transmission experiment. The importance of using low-reflectivity amplifiers with high-responsivity and weakly wavelength-dependent devices is revealed by computer simulations. The various noise contributions of the laser amplifier detector are analyzed. Expected sensitivity values are given, and it is shown that there exists an optimum amplifier gain with respect to sensitivity     

Carrier-induced group-velocity dispersion and pulse compression in semiconductor laser amplifiers

The effect of gain dispersion on pulse amplification in semiconductor laser amplifiers is investigated theoretically. A novel phenomenon, referred to as carrier-induced group-velocity dispersion, is shown to influence considerably the amplified pulse. Chirped input pulses are predicted to be compressed in the presence of carrier-induced dispersion even when the amplifier operates far below saturation. The dependence of the compression factor on device parameters such as the pulse width, the amplifier gain, and the linewidth enhancement factor are studied using a simple analytic model. The results are important for optical communication systems as they imply that semiconductor laser amplifiers can be used to compensate simultaneously for the effects of both fibre loss and fibre dispersion when used as in-line amplifiers.<>     

基于两只半导体光放大器级联结构的多波长光纤激光器

通过数值模拟对两只半导体光放大器(SOA)级联结构的静态增益饱和特性进行了理论研究.在不考虑自发辐射的情况下,分析了注入电流对两只SOA级联结构增益的影响.实验上构建了一种基于两只SOA级联结构的多波长光纤激光器,观测并分析了半导体光放大器的驱动电流和增益带宽对多波长输出结果的影响.在室温下,获得了基本符合ITU-T标准100 GHz的27个波长以上的稳定多波长输出,各信道输出功率不平坦度小于±3 dB,线宽小于0.102 nm,信噪比大于25 dB,总输出功率为1.94 mW,并且与由单只SOA构成的多波长光纤激光器进行了对比.     

Self-phase modulation and spectral broadening of optical pulses insemiconductor laser amplifiers

Amplification of ultrashort optical pulses in semiconductor laser amplifiers is shown to result in considerable spectral broadening and distortion as a result of the nonlinear phenomenon of self-phase modulation (SPM). The physical mechanism behind SPM is gain saturation, which leads to intensity-dependent changes in the refractive index in response to variations in the carrier density. The effect of the shape and the initial frequency chirp of input pulses on the shape and the spectrum of amplified pulses is discussed in detail. Particular attention is paid to the case in which the input pulsewidth is comparable to the carrier lifetime so that the saturated gain has time to recover partially before the trailing edge of the pulse arrives. The experimental results, performed by using picosecond input pulses from a 1.52-μm mode-locked semiconductor laser, are in agreement with the theory. When the amplified pulse is passed through a fiber, it is initially compressed because of the frequency chirp imposed on it by the amplifier. This feature can be used to compensate for fiber dispersion in optical communication systems     

Modeling erbium-doped fiber amplifiers

Erbium-doped fiber amplifiers are modeled using the propagation and rate equations of a homogeneous two-level laser medium. Numerical methods are used to analyze the effects of optical modes and erbium confinement on amplifier performance, and to calculate both the gain and amplified spontaneous emission (ASE) spectra. Fibers with confined erbium doping are completely characterized from easily measured parameters: the ratio of the linear ion density to fluorescence lifetime, and the absorption of gain spectra. Analytical techniques then allow accurate evaluation of gain, saturation, and noise in low-gain amplifiers (G≲20 dB)     

Gain saturation in fiber Raman amplifiers due to stimulatedBrillouin scattering

The effects of stimulated Brillouin scattering (SBS) on Raman gain are explored. Measurements of gain in a fiber Raman amplifier show a saturation at low gain levels. Experimental data and a theoretical model are presented, demonstrating that this saturation is due to pump depletion by SBS. This effect also leads to Raman gain fluctuations arising from mode partitioning in a multimode pump laser. Two ways to avoid the deleterious effects of SBS on the performance of Raman amplifiers are suggested. One is to use a multimode semiconductor laser with a modal linewidth of the order of a few hundred megahertz, which leads to a strongly reduced Brillouin gain coefficient. The second approach is to use very short pump pulses in a backward configuration     

Long-haul high-speed optical communication systems using asemiconductor laser amplifier

High-speed long-haul systems using semiconductor laser amplifiers, which eliminate the need for high-speed electronics in repeaters and are transparent to the transmission speed are considered for application in undersea high-speed transmission systems. The potential of laser-amplifier-repeated transmission systems has been explored by transmission experiments, showing that a high-speed system above 2 Gb is possible by filtering out the spontaneous emission power of the laser amplifier. A theoretical estimation of SNR degradation due to noise accumulation of chained laser amplifiers shows that systems are possible, using 30 to 40 laser amplifier repeaters, if narrow-bandwidth optical filters are used     

Statistical noise properties of an optical pulse propagating in a nonlinear semiconductor optical amplifier

We present a theoretical analysis and an experimental study of the statistical properties of the noise accompanying an optical pulse propagating in a nonlinear semiconductor optical amplifier. Several degrees of gain saturation corresponding to different levels of optical signal-to-noise ratios (OSNRs) are examined. We employ the Heun numerical procedure to ensure proper convergence to the Stratonovich solution of the multiplicative propagation equation. This algorithm takes also into account the effect of gain saturation due to the amplified spontaneous emission noise. Moreover, the multicanonical Monte Carlo algorithm is used to efficiently calculate the probability density functions (pdfs), including the tails, of the peak of a pulse which emerges at the output of a saturated semiconductor optical amplifier. The results are compared to the corresponding pdfs obtained in a linear amplification system (where the optical noise is additive and Gaussian) having the same gain and under identical OSNR levels. We demonstrate that the pdf of the saturated amplifier is shifted toward lower power levels and is narrower, or equivalently, the mean and variance for the saturated amplifier case are smaller. Also, the difference between the two configurations increases with the degree of gain saturation. The theoretical predictions are confirmed by a series of experiments in which the pdfs at the output of the linear amplification scheme and saturated semiconductor optical amplifier are measured for an optical pulse of /spl sim/ 70-ps duration.     

Effects of gain saturation in semiconductor laser amplifier links

The effects of gain saturation due to amplified spontaneous emission in systems comprising cascaded semiconductor laser amplifiers and attenuators are investigated. The influence of the relative spatial distribution in the link of gain and loss is analyzed numerically, and conclusions regarding noise optimal structures are drawn. It is shown that the performance of links with gain saturation can be quite different from the ideal, unsaturated case