共查询到19条相似文献,搜索用时 62 毫秒
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GaN材料的GSMBE生长 总被引:2,自引:0,他引:2
在国内首次用NH3作氮源的GSMBE方法在α-Al2O3衬底上生长出了GaN单昌外延膜。GaN生长速率可达0.5μm/h。GaN外延膜的(0002)双晶X射线衍射峰回摆曲线的半高宽最窄为8arcmin。霍尔迁移率为50cm^2/V.s。对质量好的GaN膜,室温阴性发光谱上只有一个强而锐的近岸边发光峰,谱峰位于372nm处,谱峰半高宽为14nm(125meV)。 相似文献
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NH3-MBE生长极化场二维电子气材料 总被引:2,自引:0,他引:2
介绍了用NH3-MBE技术在蓝宝石C面上外延的高质量的GaN单层膜以及GN/AlN/GaN极化感应二维电子气材料。外延膜都是N面材料。形成的二维电子气是“倒置二维电子气”。GaN单层膜的室温电子迁移率为300cm^2/Vs。二维电子气材料的迁移率为680cm^2/Vs(RT)和1700cm^2/Vs(77K),相应的二维电子气的面密度为3.2*10^13cm^-2(RT)和2.6x10^13cm^ 相似文献
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GaInAsSb是红外探测器中重要的半导体材料之一。我们用水平常压金属氧化物化学气相淀积(MOCVD)技术在n型GaSb衬底上成功地生长了GaInAsSb外延层,用PL谱、红外吸收谱、X射线衍射和扫描电子超声显微镜(ScanningElectronAcousticMicroscopy,SEAM)等实验手段对GaInAsSb外延层进行了表征。用GaInAsSb材料制作的红外探测器的光谱响应的截止波长达2.4μm,室温探测率D*达1×109cmHz(1/2)/W,2.25μm波长时的量子效率为30%。本文首次给出了GaInAsSb外延层的扫描电子超声显微镜像(SEAM像),为扫描电子超声显微镜在半导体材料方面的应用开辟了一个新的领域。 相似文献
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本文用GSMBE技术生长纯度GaAs和δ-掺杂GaAs/Al_xGa_(1-x)As结构二维电子气材料并对其电学性能进行了研究。对于纯度GaAs的GSMBE生长和研究,在低掺Si时,载流子浓度为2×10~(14)cm~(-3),77K时的迁移率可达84,000cm~2/V.s。对于用GSMBE技术生长的δ-掺杂GaAs/Al_xGa_(1-x)As二维电子气材料,在优化了材料结构和生长工艺后,得到了液氮温度和6K迁移率分别为173,583cm~2/V.5和7.67×10~5cm~2/V.s的高质量GaAs/Al_xGa_(1-x)As二维电子气材料。 相似文献
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本文在国内首次采用自行设计的碳纤维束源炉及固态源MBE技术生长了优质碳掺杂GaAs、AlGaAs及δ碳掺杂GaAs外延层。获得了空穴浓度从4×1014cm-3到2×1019cm-3的GaAs材料。用霍尔效应测量仪、电化学CV剖面仪和X射线双晶衍射仪分析了外延层的质量。用Nomarski干涉显微镜和原子力显微镜分析了GaAs的生长过程。结果表明碳是GaAsIIV族化合物半导体的极好的p型掺杂剂。 相似文献
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本文报导了非故意掺杂InGaAsSb本底浓度的降低和掺Ten型GaSb和InGaAsSb的MBE生长与特性的研究结果。结果表明,通过生长工艺的优化,GaSb和InGaAsSb的背景空穴浓度可分别降至1.1×10~(16)cm~(-3)和4×10~(16)cm~(-3),室温空穴迁移率分别为940cm2/v.s和260cm~2/v.s。用Te作n型掺杂剂,可获得载流子浓度在10~(16)~10~(18)cm~(-3)的优质GaSb和InGaAsSb外延层,所研制的材料已成功地制备出D_λ~*=4×10~(10)cmHz~(1/2)/W的室温InGaAsSb红外探测器和室温脉冲AlGaAsSb/InGaAsSb双异质结激光器。 相似文献
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An overview is presented of progress in GaN electronic devices for high‐power, high‐temperature applications. The wide bandgaps of the nitride materials, their excellent transport properties, and the availability of heterostructures (e.g., GaN/AlGaN) make them ideal candidates for these applications. In the past few years a wide range of devices have been reported, including heterostructure field effect transistors (HFETs), heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs), Schottky and p–i–n rectifiers, and metal–oxide–semiconductor field effect transistors (MOSFETs). Some of the unexpected features of GaN‐based electronics include the ability to use piezoelectrically induced carriers for current transport in heterostructures and the sensitivity of the GaN surface to preferential loss of nitrogen during device processing. 相似文献
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Yuan TIAN Yongliang SHAO Xiaopeng HAO Yongzhong WU Lei ZHANG Yuanbin DAI Qin HUO Baoguo ZHANG Haixiao HU 《材料科学前沿(英文版)》2019,13(3):314
In this work, a method to acquire freestanding GaN by using low temperature (LT)-GaN layer was put forward. To obtain porous structure and increase the crystallinity, LT-GaN layers were annealed at high temperature. The morphology of LT-GaN layers with different thickness and annealing temperature before and after annealing was analyzed. Comparison of GaN films using different LT-GaN layers was made to acquire optimal LT-GaN process. According to HRXRD and Raman results, GaN grown on 800 nm LT-GaN layer which was annealed at 1090 °C has good crystal quality and small stress. The GaN film was successfully separated from the substrate after cooling down. The self-separation mechanism of this method was discussed. Cross-sectional EBSD mapping measurements were carried out to investigate the effect of LT-buffer layer on improvement of crystal quality and stress relief. The optical property of the obtained freestanding GaN film was also determined by PL measurement. 相似文献
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Malin T. V. Milakhin D. S. Aleksandrov I. A. Zemlyakov V. E. Egorkin V. I. Zaitsev A. A. Protasov D. Yu. Kozhukhov A. S. Ber B. Ya. Kazantsev D. Yu. Mansurov V. G. Zhuravlev K. S. 《Technical Physics Letters》2019,45(8):761-764
Technical Physics Letters - It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by... 相似文献
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We studied the thermoelectric properties of free-standing GaN (fr-GaN) and epitaxial GaN layer (epi-GaN), and furthermore, we have fabricated thermoelectric devices using these materials. For fr-GaN, the maximum power factor was 7.7 × 10− 4 W/m K2 at 373 K, and for epi-GaN layer, the maximum power factor was 9.4 × 10− 4 W/m K2 at 373 K. The devices fabricated are (a) fr-GaN and chromel of 4 pairs, and (b) epi-GaN and chromel of 3 pairs. The maximum output power and the open output voltage were (a) 3.35 × 10− 6 W and 2.76 × 10− 2 V at ΔT = 153 K, and (b) 1.21 × 10− 7 W and 1.71 × 10− 2 V at ΔT = 153 K, respectively. 相似文献
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The high density vertically aligned GaN nanorods array was fabricated by thermal evaporation of GaN powder with the assistance of HCl gas. The GaN nanorods array was used as template for GaN film growth by hydride vapor phase epitaxy (HVPE). The full width at half maximum values (FWHM) of high-resolution X-ray diffraction (HRXRD) rocking curves for the GaN film with GaN nanorods array template are 247 arc sec (002 reflection) and 308 arc sec (102 reflection), while those for the GaN film without GaN nanorods array template are 292 and 369 arc sec, respectively. This result indicates a significant reduction of dislocation density in the overgrown GaN film with GaN nanorods array template. Photoluminescence spectra measurements reveal the compressive strain relaxation and an improvement in the quality of the overgrown GaN film with GaN nanorods array template as compared to the regrown GaN film without GaN nanorods array template, which is consistent with the trend observed by HRXRD. 相似文献
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M. Steube K. Reimann D. Frhlich S. J. Clarke 《Materials Science and Engineering: B》1997,50(1-3):188-191
Two-photon spectroscopy allows to observe unambigously the free A, B, and C excitons with n=2 in bulk GaN. Their energies allow the precise determination of the three band gaps and of the exciton binding energies. 相似文献
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研究了以金属有机物化学气相沉积方法生长在6H-SiC衬底上的GaN光导型紫外探测器的光电流性质。通过光电流谱的测量,获得了GaN探测器在波长250nm-360nm范围近于平坦的光电流响应,并且观察到在365nm( ̄3.4eV)带边附近陡峭的截止边。测得GaN探测器在5V偏压下在360nm波长处的光电流响应度为133A/W,并得到了其响应度与外加偏压的关系。通过拟合光电信号强度与入射光调制频率的实验 相似文献
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Single crystal gallium nitride nanowires have been obtained by heating gallium acetylacetonate in the presence of carbon nanotubes or activated carbon in NH3 vapor at 910 degrees C. GaN nanowires also were obtained when the reaction of gallium acetylacetonate with NH3 was carried out over catalytic Fe/Ni particles dispersed over silica. The former procedure with carbon nanotubes is preferable because it avoids the presence of metal particles in the nanowire bundles. 相似文献
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Yu. V. Zhilyaev A. V. Nasonov S. D. Raevskii S. N. Rodin M. P. Shcheglov Sh. A. Yusupova V. Yu. Davydov 《Technical Physics Letters》2003,29(5):400-403
Mirror-smooth, transparent bulk GaN layers with an area of 2×3 cm2 and a thickness of up to 1 mm were grown by hydrochloride vapor-phase epitaxy. Cracking of the material was eliminated by
using a two-stage growth process; separation from a substrate was provided by a low-temperature buffer layer of preset thickness.
For the best samples, FWHM of the X-ray rocking curve was ωθ=3.5′ and the dislocation density amounted to 107–108 cm−2. 相似文献