余弦高斯光束通过左手平板材料的传输特性

在傍轴近似下,利用广义惠更 斯-菲涅尔衍射积分公式得到了余弦高斯光束通过左手平板材料的传输公式,研究了左手平 板材料的负折射 率与余弦高斯光束的调制参数对光束传输特性的影响。结果表明:余弦高斯光束无论在 左手平板材料 内部传输还是在像空间传输,轴上的最大光强位置是光束聚焦的位置,左手平板材料的负折 射率会改变光 束聚焦的位置;在介质内部,平板材料的负折射率会改变轴上光强分布的形状,但不会改变 像空间轴上的 光强分布形状;无论是在平板材料内部还是像空间,余弦高斯光束的调制参数对轴上与横向 光强都会产生影响。     

厄米余弦高斯光束在梯度折射率介质中的传输特性

基于广义惠更斯-菲涅耳衍射积分法,对梯度折射率介质中的厄米余弦高斯光束传输特性进行了研究,得出了在梯度折射率介质中厄米余弦高斯光束的光场表达式,并利用此表达式作数值模拟,研究了梯度折射率介质对厄米余弦高斯光束传输特性的影响。结果表明:光强在轴上分布呈现空间周期性变化,最大光强位置与梯度折射率系数β有关;随着调制参数α的增大,轴上最大光强逐渐减小而且出现了空心分布。在同一传输面上横向光强随梯度折射率系数β增加,先增大后快速减小;并且发现调制参数α变大,光强不变,但是束腰宽变窄。     

双曲正弦平方高斯光束通过左手平板材料的传输特性

在傍轴近似条件下,基于广义惠更斯-菲涅耳衍射积分公式,推导了双曲正弦平方高斯光束在自由空间、左手平板材料中及通过左手平板材料后的三维光强传输公式,并进行数值计算和分析,探究了双曲正弦平方高斯光束通过左手平板材料的传输特性。研究表明,左手材料对双曲正弦平方高斯光束轴上光强和横向光强分布规律的影响是使光强呈对称分布;材料的负折射率会影响光束轴上光强极大值的位置;轴上光强和横向光强均随传输距离和偏心参数的改变而变化,即双曲正弦平方高斯光束不能保持其传输不变性。实际应用中,可用改变偏心参数的方法在不同位置对光束进行整形。     

非傍轴部分相干厄米-余弦-高斯光束传输特性

为了研究非傍轴部分相干厄米-余弦-高斯光束传输特性,运用Wigner分布函数法,从空间域和频率域对非傍轴部分相干厄米-余弦-高斯光束传输特性进行了理论分析,得出了该光束1阶情况下在空间、频率域系统的解析传输公式及光强分布表达式,分析了这些表达式中3个主要参量f,fσ和g对厄米-余弦-高斯光束在自由空间传输的影响。结果表明,在调制参量g不变时,束腰参量f和相干参量fσ对非傍轴部分相干厄米-余弦-高斯光束的非傍轴性起了至关重要的作用;非傍轴部分相干厄米-余弦-高斯光束在传输过程中随着g的改变,不能保持其光强分布形状,有前移趋势。     

非傍轴部分相干厄米-余弦-高斯光束传输特性

为了研究非傍轴部分相干厄米-余弦-高斯光束传输特性,运用Wigner分布函数法,从空间域和频率域对非傍轴部分相干厄米-余弦-高斯光束传输特性进行了理论分析,得出了该光束1阶情况下在空间、频率域系统的解析传输公式及光强分布表达式,分析了这些表达式中3个主要参量f,fσ和g对厄米-余弦-高斯光束在自由空间传输的影响。结果表明,在调制参量g不变时,束腰参量f和相干参量fσ对非傍轴部分相干厄米-余弦-高斯光束的非傍轴性起了至关重要的作用;非傍轴部分相干厄米-余弦-高斯光束在传输过程中随着g的改变,不能保持其光强分布形状,有前移趋势。     

余弦平方-高斯光束通过像散透镜的焦开关

为了研究余弦平方.高斯光束通过像散透镜后的焦开关现象,应用Collins公式推导出了聚焦余弦平方-高斯光束轴上光强分布的表达式,通过数值运算得到了像散参量对轴上光强分布的影响.结果表明,在给定光束参量和光束菲涅耳数的条件下,光束入射面位置不同时,余弦平方-高斯光束通过像散透镜后的相对焦移随像散参量变化而变化,确定了在此...     

色散会聚透镜系统中的微米焦开关

为了研究宽带TEM22模厄米-高斯光束通过受光阑限制色散会聚透镜系统的微米焦开关现象,采用数值计算方法对TEM22模厄米-高斯光束的光强分布进行了分析,取得了传输轴上光强分布的数据.结果表明,带宽变化引起轴上TEM22模厄米-高斯光束两个光强极大的相对大小改变,结果导致光强主极大位置跃变;当相对带宽γ=0.231且菲涅...     

贝塞尔-高斯光束经球差透镜的聚焦特性

利用广义惠更斯-菲涅耳衍射积分推导了一种涡漩光束——贝塞尔-高斯光束经球差透镜聚焦后的光场表达式,并利用数值计算分析了球差系数对聚焦光束光强剖面分布的影响。研究表明,通过改变球差系数,可以改变零阶贝塞尔-高斯光束轴上光强最大值点的位置,球差的存在使轴上光强最大值减小。零阶贝塞尔-高斯光束经球差透镜聚焦后不能保持其传输不变性,在几何焦面上光强剖面类似于高斯形分布,而实际焦点所在面上的分布则仍具有零阶贝塞尔函数的特征。对于一阶贝塞尔—高斯光束,球差的存在会改变其横向光强分布。     

部分相干复宗量厄米-高斯光束捕获两种类型粒子

基于互谱密度函数和瑞利散射理论,推导了聚焦部分相干复宗量厄米-高斯光束的光强分布和作用在瑞利电介质球上辐射力的解析表达式,并进行了相应的数值计算。结果表明:当横向相干长度较大时,聚焦部分相干复宗量厄米-高斯光束具有空心光束的轮廓,空心的尺寸随着光束阶数的增加而增大;随着相干度的逐渐减小,聚焦部分相干复宗量厄米-高斯光束逐渐转化成高斯光束,光强的峰值随着光束阶数的增加而减小。通过改变光束的相干度,选择合适的光束阶数、光束腰宽及透镜的焦距长度,可实现对折射率不同的两类粒子的大范围、稳定捕获,所得结论对光学捕获具有一定的理论参考价值。     

色散透镜系统中宽带厄米-高斯光束的焦移

为了了解带宽对厄米-高斯光束的聚焦特性和焦移的影响，采用衍射积分推导了TEM₁₁模和TEM₂₂模厄米-高斯光束通过受光阑限制色散透镜的传输公式，并利用数值计算对聚焦光强分布进行了研究，分析了带宽对两种模式焦移的影响。结果表明，TEM₁₁模和TEM₂₂模厄米-高斯光束的焦移量都会随带宽增大而增大，但两者的大小依赖相对带宽；当相对带宽小于0.25时，TEM₂₂模焦移量大于TEM₁₁模焦移量，然而相对带宽大于0.25时，后者会稍大于前者；带宽变化使TEM₂₂模轴上光强主极大和次极大发生消长，从而引起轴上光强极大位置发生跃变。该研究结果对宽带厄米-高斯光束的应用具有一定的参考价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.