基于PIC18F2550的OLED测试系统的设计与实现

针对AM-OLED的结构与特点,提出了一种以PIC18LF2550为主控器、以SVGA050微显芯片为对象的OLED接口电路设计方案,通过主控器的I2C串行总线配置各模块的寄存器参数,可以将VGA和CVBS格式的视频输入信息在OLED上正确显示出来。通过对开发的硬件系统进行实测,验证了该方案的有效性。     

1.6 cm SVGA LCoS微型显示器的研制

介绍了我国自主开发研制的分辨率为800×600(SVGA)、以单晶硅为基底的微型液晶显示器--LCoS(Liquid-Crystal-on-Silicon,硅基液晶)显示器,并展示LCoS微显示器系统电路结构、显示芯片物理结构、微显光机放大原理、以及相关视频显示图像,从一个侧面反映了中国的LCoS显示技术研发水平.     

基LCoS技术的微型显示器

介绍了一款我国自主开发研制的分辨率为800×600(SVGA)、以单晶硅为基底的微型液晶显示器一LCoS,其中展示了LCoS微显示器系统电路结构、显示芯片物理结构、微显光机放大原理以及相关实物照片.     

基于USB2.0的三维头盔显示器接口电路设计

提出了一种以PC为虚拟图像源、基于USB2.0接口的三维头盔显示器接口电路设计方案。该方案以CPLD(复杂可编程逻辑器件)作为数据传输的控制核心,应用接口芯片的量子FIFO(先进先出存储器)架构解决了数据高速传输的带宽问题,并采用了外部高速缓存模块以实现数据传输的完整性,同时显示模块采用了英国MED公司ME3203微显示芯片。整个接口电路采用16位数据总线并行传输的方式,两片8位微显示芯片被看作一个整体共用16位总线,在同一时钟下扫描显示,实现了双目同步显示。最后通过对PC机中黑白条图像的传输,验证了数据传输的可靠性,传输速度满足了系统要求。该方案结构简单,灵活性强,从真正意义上实现了头盔显示器的双通道立体显示,符合民用头盔显示器的发展方向,可被广泛地应用于微显示领域图像实时传输的场合。     

新型DVI数字视频接口电路的研究

随着各种平板显示器的广泛应用,高画质视频接口技术的研究凸显重要.采用基于DVI接口解码芯片SiI161硬件电路设计方案,进行了高分辨率平板显示嚣视频接口电路的试验研究,实现了平板显示器可用高质量数字视频 数据的解码输出.该设计方案已在液晶显示器等接口电路系统中得到验证,为系统提供优质稳定的数字视频源,最高图像显示分辨率...     

基于SVGA与PAL视频双接口嵌入式成像系统

本文介绍了一种基于SVGA显示接口和PAL制式视频接口两种显示接口的成像系统,两种显示接口共用同一块图像存贮器,能实现图像的动态实时显示。系统采用SOPC技术,将32位CPU、SVGA时序控制单元、PAL制视频控制单元及实时成像控制单元集成嵌入在一片FPGA芯片中。     

基于SVGA与PAL视频双接口嵌入式成像系统

本文介绍了一种基于SVGA显示接口和PAL制式视频接口两种显示接口的成像系统,两种显示接口共用同一块图像存贮器,能实现图像的动态实时显示.系统采用SOPC技术,将32位CPU、SVGA时序控制单元、PAL制视频控制单元及实时成像控制单元集成嵌入在一片FPGA芯片中.     

基于FPGA的头盔显示器的视频驱动电路设计

在此介绍一种高性能的LCD型头盔显示器的视频驱动电路设计。实现了高分辨率DVI视频信号的解码、视频图像处理、LCD驱动等功能。采用FPGA作为硬件平台,对视频信号进行处理、对比度/亮度调节、图像扫描方向控制、LCD驱动时序生成以及MINI-LVDS接口实现等。采用专用芯片产生LCD需要的gamma电压值,实现了0.96英寸的液晶屏的驱动。具有显示分辨率高(1 400×1 050)、参数可调节、接口简单、功耗低等特点。最后通过实物测试,验证了该电路功能。     

AD9883在平板显示视频接口中的应用

结合平板显示器（FPD）视频显示的原理，介绍了平板显示器接口芯片AD9883的主要性能。重点论述了芯片功能结构、内部寄存器设置以及在平板显示视频接口中的应用。结合FPGA技术提出了一种接口电路方案，实现高分辨率视频图像的采集，为平板显示器件提供良好的数字视频源。利用AD9883高速、高精度的视频A／D转换功能，该方案支持显示分辨率最高为SXGA，可广泛应用于多种平板显示器件。     

SiI161在彩色FED中的应用

简单介绍了数字视频接口DVI 1.0接口规范,着重论述了SiI161芯片内部功能结构、工作时序以及在FED平板显示器件视频驱动电路中的应用。提出了基于SiI161的硬件电路设计方案,此电路方案已在25英寸彩色FED驱动系统中使用,为系统提供优质的数字视频源,显示分辨率最高支持UXGA。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.