等离子体显示屏“万年残像”现象的研究

介绍了等离子显示器中两种类型的残像，对比分析了目前厂家预防残像的几种措施的优缺点。残像的产生与画面颜色，图像格式，亮度和对比度等有关，且可通过像素移动、色相位差互补和屏幕刷等方法预防和消除。提出了残像初步测试的方法，通过在PDP屏上显示易产生残像的三组典型画面及其对比画面，来分析残像产生的可能原因以及相应的处理方法。     

LCD面板TFT特性相关残像研究

残像是影响TFT-LCD画面品质的重要因素,也是发生原因最为复杂的一种不良。本论文提出了一种定量测量残像水平的方法,同时对TFT特性引起的残像不良进行了实验研究,得到了由TFT特性引起的交流(AC)残像发生规律及发生机理。本文通过对比研究残像画面黑白格亮度与TFT漏电流变化曲线,同时结合像素充放电计算公式进行电压差模拟,发现黑白格像素放电差异导致的像素保持电位差异(ΔV12.5mV)是发生残像的根本原因。根据以上机理,本论文提出了两种方法改善此类残像。第一种是通过改善TFT a-Si成膜工艺减小漏电流(50pA),同时提升TFT特性的稳定性,可以减小棋盘格画面残像评价导致的TFT转移特性曲线偏移;第二种是通过改变栅压低电平,避开关态时不同显示区域的TFT漏电流差异峰值;以上两种方法均可以有效改善残像(ΔL0.5cd/m~2)。     

对向型等离子体显示板放电特性分析

采用流体模型分析了对向型交流等离子体显示板(ACM PDP)的放电过程.通过模拟,获得了ACM PDP单元的Q-U曲线及电压转移曲线,同时还给出了放电延迟、电流脉冲宽度与放电电压的关系,所得结果符合实验测量数据.     

PDP介质保护膜材料的研究进展

由于AC PDP介质保护膜与放电气体直接接触,因而对PDP的工作特性如工作寿命、发光效率、发光亮度、着火电压及放电时间延迟等有重要影响,其性能的提升对提高AC PDP的工作特性有重要意义。本文综述了介质保护膜材料的最新发展状况,包括五种掺杂MgO保护膜和两种新型材料的介质保护膜,并将其发光效率、发光亮度、维持电压、记忆系数等工作特性同传统MgO保护膜进行了对比、分析。     

106cm的PDP,对比度高达300:1

据报道，继1996年11月富士通推出106cm的PDP以来，NEC以同样的120万日元售价推出了106cm级PDP。但对比度远远地高于富士通的产品，富士通的对比度为60∶1，而NEC的产品高达300∶1。为了提高亮度低下时的对比度，该公司改变了驱动方法。过去的彩色PDP，在每一帧使用了至少使全象素一次引火放电的驱动方式。为实现灰度显示，必须增加放电次数。如，8bit的亮度信号下显示256灰度时，在一帧内至少进行八次引火放电。其结果是提高了黑色显示的亮度，而在环境亮度差的情况下，对比度下降。而这次NEC只需一次引火放电就可进行256灰度显示。…     

新型高发光效率等离子体显示技术

对PDP面临的技术瓶颈和发光效率进行了分析,重点介绍了基于纳米多孔多晶硅电子源的新型高发光效率PDP显示技术,简要讨论了无放电气体激发发光技术对PDP未来发展可能产生的影响。     

基于实测校正因子的实时伽马校正算法

针对等离子显示器(Plasma Display Panel,PDP)反伽马校正过程中因荧光粉亮度饱和以及APL临界切换引起的灰度级失真和闪烁现象,提出了一种基于PDP发光特性的实时反伽马校正算法。该算法采用实测关键灰度级亮度和基于图像APL的校正因子补偿算法,通过实测亮度和灰度级之间的对应关系实现了灰度级的线性输出,引入校正因子消除了不同图像切换过程时的闪烁。50 in(1 in=2.54 cm)PDP实验结果表明,该算法能够减少大面积暗场区域存在的闪烁现象,消除显示图像输出灰度的失真和反转,增强显示画面的细节,提高显示画质。此外,算法采用分段式多项式拟合进行实时反伽马计算,使算法具有处理速度快,对电路依赖性小等优点。     

AC- PDP 的发光光效的数值模拟计算

根据AC—PDP中气体放电机理的物理模型，修改了前人提出的基于粒子流连续性方程和泊松方程的AC—PDP放电单元的数值计算模型。然后由模型的数值解描述了放电过程中三种波长(147nm，152nm，173nm)的紫外光子的时空分布，从而进一步计算出累计的紫外光光效。     

三维PDP放电过程数值模拟软件

介绍了三维PDP放电过程模拟软件，该软件可较真实地反映放电单元的实际情况，对放电性能进行优化设计，且具有通用性强、界面友好、使用方便、功能完善等特点。可对不同结构、不同气体成份、不同驱动电压及波形等情况进行计算。     

彩色PDP放电单元参数设置分析

本文对三电极表面放电反射结构彩色PDP放电单元进行了等效和分析,利用一实验验证及计算机模拟的结果,研究了放电单元的一些参数变化对单元亮度、功耗以及发光效益的影响,为彩色PDP的单元设计提供了一定的参考。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks